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    • 8. 发明申请
    • TRENCH AND HOLE PATTERNING WITH EUV RESISTS USING DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA (CCP)
    • 使用双频电容耦合等离子体(CCP)对EUV电阻进行TRENCH和HOLE
    • US20160293405A1
    • 2016-10-06
    • US15088701
    • 2016-04-01
    • Tokyo Electron Limited
    • Hiroie MatsumotoAndrew W. MetzYannick FeurprierKatie Lutker-Lee
    • H01L21/027G03F7/20H01L21/311
    • H01L21/0274G03F7/20G03F7/2004H01L21/0273H01L21/31058H01L21/31116H01L21/31138H01L21/31144
    • A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer. The method further includes repeating the selective depositing and etching, at least until the complete thickness of the non-masked portions of the antireflective coating layer is removed, to expose the underlying organic layer.
    • 公开了一种在衬底上蚀刻抗反射涂层的方法。 基板包括有机层,设置在有机层上方的抗反射涂层以及设置在抗反射涂层之上的光致抗蚀剂层。 该方法包括图案化光致抗蚀剂层以暴露抗反射涂层的非掩蔽部分,并且在抗反射涂层的非掩蔽部分和图案化光致抗蚀剂层的非侧壁部分上选择性地沉积含碳层。 该方法还包括蚀刻薄膜叠层以除去含碳层并除去抗反射涂层的非掩蔽部分的部分厚度,而不会减小光致抗蚀剂层的厚度。 该方法还包括重复选择性沉积和蚀刻,至少直到除去抗反射涂层的非掩蔽部分的完整厚度以露出下面的有机层。
    • 9. 发明授权
    • Self-aligned patterning using directed self-assembly of block copolymers
    • 使用嵌段共聚物的定向自组装的自对准图案
    • US09396958B2
    • 2016-07-19
    • US14865128
    • 2015-09-25
    • Tokyo Electron Limited
    • Andrew W. MetzAnton J. deVilliers
    • H01L21/30H01L21/308
    • H01L21/3086H01L21/0271H01L21/3081H01L21/3088H01L21/31133H01L21/31144H01L21/76816H01L21/76897
    • Techniques herein provide methods for self-aligned etching that use existing features for patterning or registering a pattern, without damaging existing features. Existing substrate structures are used to create a surface that enables directed self-assembly (DSA) of block copolymers (BCP) without a separate lithographic patterning layer. Methods herein include recessing at least one existing material or structure on a substrate, and adding a film that remains on the recessed material only. This film can be selected to have a preferential surface energy that enables controlled self-assembly of block copolymers. The substrate can then be etched using both existing structures and one polymer material as an etching mask. One example advantage is that self-assembled polymer material can be located to protect exposed corners of existing features, which reduces a burden of selective etch chemistry, increases precision of subsequent etching, and reduces sputter yield.
    • 本文中的技术提供了使用现有特征进行图案化或注册图案的自对准蚀刻的方法,而不损害现有特征。 使用现有的基底结构来产生表面,其使得无需单独的平版印刷图案层的嵌段共聚物(BCP)的定向自组装(DSA)。 本文的方法包括在衬底上凹陷至少一个现有材料或结构,并且仅添加仅保留在凹陷材料上的膜。 可以选择该膜具有能够控制嵌段共聚物自组装的优先表面能。 然后可以使用现有结构和一种聚合物材料作为蚀刻掩模蚀刻该衬底。 一个示例性的优点是可以定位自组装的聚合物材料以保护现有特征的暴露角,这减少了选择性蚀刻化学的负担,提高随后蚀刻的精度​​,并降低溅射产率。