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1. 发明申请

US20170263443A1 TRENCH AND HOLE PATTERNING WITH EUV RESISTS USING DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA (CCP) 审中-公开
公开(公告)号：US20170263443A1
公开(公告)日：2017-09-14
申请号：US15458476
申请日：2017-03-14
申请人： Tokyo Electron Limited
发明人： Hiroie Matsumoto , Andrew W. Metz , Yannick Feurprier , Katie Lutker-Lee
IPC分类号： H01L21/027 , G03F7/20 , H01L21/311
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/2004 , H01L21/0273 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.

2. 发明授权

US09099285B2 Plasma processing method and plasma processing apparatus 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US09099285B2
公开(公告)日：2015-08-04
申请号：US14064293
申请日：2013-10-28
申请人： TOKYO ELECTRON LIMITED
发明人： Hiroie Matsumoto , Kazuto Ogawa
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H01L21/822 , H01L21/768 , H01L21/311 , H01L27/115
CPC分类号： H01L21/67069 , C23C16/505 , C23C16/52 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/8221 , H01L27/11556
摘要： Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.
摘要翻译：提供了一种等离子体处理方法和等离子体处理装置，其可以在蚀刻停止层的表面上形成保护膜，并且在蚀刻氧化物层时抑制孔的堵塞。等离子体处理方法在包括氧化物层，多个由钨制成的多个蚀刻停止层和掩模层的多层膜中形成具有不同深度的多个孔。等离子体处理方法包括蚀刻工艺，其中提供处理气体以产生等离子体，使得从氧化物层的顶表面到多个蚀刻停止层进行蚀刻，以便在氧化物层中形成具有不同深度的孔。这里，处理气体包括碳氟化合物系气体，稀有气体，氧气和氮气。

3. 发明授权

US09818610B2 Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP) 有权
公开(公告)号：US09818610B2
公开(公告)日：2017-11-14
申请号：US15458476
申请日：2017-03-14
申请人： Tokyo Electron Limited
发明人： Hiroie Matsumoto , Andrew W. Metz , Yannick Feurprier , Katie Lutker-Lee
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/027 , H01L21/311 , G03F7/20
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/2004 , H01L21/0273 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.

4. 发明授权

US09607834B2 Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP) 有权
公开(公告)号：US09607834B2
公开(公告)日：2017-03-28
申请号：US15088701
申请日：2016-04-01
申请人： Tokyo Electron Limited
发明人： Hiroie Matsumoto , Andrew W. Metz , Yannick Feurprier , Katie Lutker-Lee
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/027 , G03F7/20 , H01L21/311 , H01L21/3105
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/2004 , H01L21/0273 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer. The method further includes repeating the selective depositing and etching, at least until the complete thickness of the non-masked portions of the antireflective coating layer is removed, to expose the underlying organic layer.

5. 发明申请

US20160293405A1 TRENCH AND HOLE PATTERNING WITH EUV RESISTS USING DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA (CCP) 有权
标题翻译：使用双频电容耦合等离子体（CCP）对EUV电阻进行TRENCH和HOLE
公开(公告)号：US20160293405A1
公开(公告)日：2016-10-06
申请号：US15088701
申请日：2016-04-01
申请人： Tokyo Electron Limited
发明人： Hiroie Matsumoto , Andrew W. Metz , Yannick Feurprier , Katie Lutker-Lee
IPC分类号： H01L21/027 , G03F7/20 , H01L21/311
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/2004 , H01L21/0273 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed above the organic layer, and a photoresist layer disposed above the antireflective coating layer. The method includes patterning the photoresist layer to expose a non-masked portion of the antireflective coating layer and selectively depositing a carbon-containing layer on the non-masked portions of the antireflective coating layer and on non-sidewall portions of the patterned photoresist layer. The method further includes etching the film stack to remove the carbon-containing layer and to remove a partial thickness of the non-masked portions of the antireflective coating layer without reducing a thickness of the photoresist layer. The method further includes repeating the selective depositing and etching, at least until the complete thickness of the non-masked portions of the antireflective coating layer is removed, to expose the underlying organic layer.
摘要翻译：公开了一种在衬底上蚀刻抗反射涂层的方法。基板包括有机层，设置在有机层上方的抗反射涂层以及设置在抗反射涂层之上的光致抗蚀剂层。该方法包括图案化光致抗蚀剂层以暴露抗反射涂层的非掩蔽部分，并且在抗反射涂层的非掩蔽部分和图案化光致抗蚀剂层的非侧壁部分上选择性地沉积含碳层。该方法还包括蚀刻薄膜叠层以除去含碳层并除去抗反射涂层的非掩蔽部分的部分厚度，而不会减小光致抗蚀剂层的厚度。该方法还包括重复选择性沉积和蚀刻，至少直到除去抗反射涂层的非掩蔽部分的完整厚度以露出下面的有机层。

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