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1. 发明授权

US09234083B2 Method and apparatus for forming a periodic pattern using a self-assembled block copolymer 有权
标题翻译：使用自组装嵌段共聚物形成周期性图案的方法和装置
公开(公告)号：US09234083B2
公开(公告)日：2016-01-12
申请号：US14384725
申请日：2013-03-21
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Fumiko Yamashita , Satoko Niitsuma
IPC分类号： C08J7/12 , H01L21/033 , H01L21/027 , H01L21/311 , B82Y30/00 , B81C1/00 , H01J37/32
CPC分类号： C08J7/123 , B81C1/00031 , B81C2201/0149 , B82Y30/00 , C08J2353/00 , G03F7/0002 , H01J37/32366 , H01J37/32651 , H01J2237/334 , H01L21/0271 , H01L21/0273 , H01L21/0332 , H01L21/0337 , H01L21/31127 , H01L21/31133 , H01L21/31138
摘要： A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process.
摘要翻译：提供一种使第一聚合物和第二聚合物嵌段共聚物自组装在下层膜上并在引导层中形成周期性图案的方法。该方法包括通过从第一气体产生的等离子体蚀刻第二聚合物的第一蚀刻工艺，在第一聚合物的表面上沉积第一保护膜的第一膜沉积工艺和除第二聚合物的蚀刻部分之外的引导层通过在第一蚀刻工艺之后由第二气体产生的等离子体，以及第二蚀刻工艺，在第一膜沉积工艺之后，通过由第一气体产生的等离子体进一步蚀刻第二聚合物。

2. 发明授权

US09882124B2 Etching method and substrate processing apparatus 有权
公开(公告)号：US09882124B2
公开(公告)日：2018-01-30
申请号：US14616863
申请日：2015-02-09
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Akitaka Shimizu , Fumiko Yamashita
IPC分类号： H01L21/00 , H01L43/12 , C21D8/12 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , C21D8/12 , C21D8/1277 , H01J2237/334 , H01L43/02 , H01L43/08
摘要： An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.

3. 发明授权

US09245764B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US09245764B2
公开(公告)日：2016-01-26
申请号：US14356809
申请日：2012-11-16
申请人： TOKYO ELECTRON LIMITED
发明人： Eiichi Nishimura , Tadashi Kotsugi , Fumiko Yamashita , Kenji Adachi
IPC分类号： H01L21/311 , H01L21/308 , H01L21/033 , H01L21/3213 , H01J37/32 , H01L21/3065
CPC分类号： H01L21/3088 , H01J37/32091 , H01L21/0337 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/32137
摘要： This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.
摘要翻译：该半导体器件制造方法具有：成膜步骤，其中形成氮化硅层或氧化硅层，使得形成在衬底上并图案化的含硅层的侧壁部分被覆盖与氮化硅层或氧化硅层; 以及等离子体蚀刻步骤，其中选择性地除去含硅层，并且留下形成在侧壁部分上的氮化硅层或氧化硅层。在等离子体蚀刻步骤中，使用含有SF 6气体的蚀刻气体。

4. 发明授权

US09419211B2 Etching method and substrate processing apparatus 有权
标题翻译：蚀刻方法和基板处理装置
公开(公告)号：US09419211B2
公开(公告)日：2016-08-16
申请号：US14065597
申请日：2013-10-29
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Nao Koizumi , Takashi Sone , Fumiko Yamashita
IPC分类号： H01L21/00 , H01L43/12 , H01J37/32
CPC分类号： H01L43/12 , G11C11/161 , H01J37/32091
摘要： A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CF4 gas into the processing chamber.
摘要翻译：可以优化用于蚀刻工艺的气体和其中绝缘层插入在两层磁性材料之间的金属叠层膜的处理过程。蚀刻包括在第一磁性层和第二磁性层之间插入有绝缘层的金属层叠膜的多层膜的蚀刻方法包括：通过供给至少含有C，O的气体产生的等离子体蚀刻金属层叠膜，和H进入处理室; 以及通过将至少含有CF 4气体的气体供给到所述处理室中而产生的等离子体处理所述金属层叠膜。

5. 发明授权

US09412618B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US09412618B2
公开(公告)日：2016-08-09
申请号：US14776886
申请日：2014-04-09
申请人： Tokyo Electron Limited
发明人： Shinya Morikita , Eiichi Nishimura , Fumiko Yamashita
IPC分类号： H01L21/311 , H01L21/02 , H01J37/32 , B81C1/00 , H01L21/027 , G03F7/00
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , H01J37/32091 , H01J37/32577 , H01L21/02118 , H01L21/02351 , H01L21/0271 , H01L21/31138 , H01L21/31144
摘要： A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.
摘要翻译：在目标物体的下层上形成图案的图案形成方法包括在下层上形成包含第一聚合物和第二聚合物并被构造成自组装的嵌段共聚物层; 处理目标物体以形成含有第一聚合物的第一区域和在嵌段共聚物层中含有第二聚合物的第二区域; 在对象物体的处理之后，在电容耦合等离子体处理装置中在其厚度方向的中间蚀刻第二区域; 在蚀刻第二区域之后，通过向上部电极施加负的DC电压并将二次电子照射到目标物体上，从等离子体处理装置的上部电极产生二次电子; 并且另外在照射二次电子之后蚀刻等离子体处理装置中的第二区域。

6. 发明申请

US20150132970A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20150132970A1
公开(公告)日：2015-05-14
申请号：US14396032
申请日：2013-04-16
申请人： TOKYO ELECTRON LIMITED
发明人： Eiichi Nishimura , Akitaka Shimizu , Fumiko Yamashita , Daisuke Urayama
IPC分类号： H01J37/32 , H01L43/12 , H01L21/67
CPC分类号： H01J37/32513 , H01J37/32 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32724 , H01J37/32834 , H01J2237/334 , H01L21/67069 , H01L43/12
摘要： An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.
摘要翻译：在被处理对象物中包含的蚀刻对象膜被蚀刻时，沉积的反应产物的处理装置具备：处理室; 隔板等离子体源安装台; 第一处理气体供应单元; 第二处理气体供应单元。处理室限定空间，并且分隔板布置在处理室内，并且将空间分成等离子体产生空间和基板处理空间，同时抑制离子的渗透和真空紫外线。等离子体源在等离子体形成空间中产生等离子体。安装台布置在基板处理空间中以将目标物体安装在其上。

7. 发明授权

US09691643B2 Etching apparatus 有权
公开(公告)号：US09691643B2
公开(公告)日：2017-06-27
申请号：US14499341
申请日：2014-09-29
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Tadashi Kotsugi , Fumiko Yamashita
IPC分类号： H01L21/32 , H01L21/3065 , H01L21/67 , H01L21/033 , H01L21/311 , H01J37/32 , H01L21/027 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： H01L21/67069 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01J37/32009 , H01J37/32091 , H01J37/32155 , H01J37/32706 , H01J2237/3343 , H01J2237/3348 , H01L21/0271 , H01L21/0332 , H01L21/0337 , H01L21/3065 , H01L21/31138
摘要： An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

8. 发明申请

US20160042970A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20160042970A1
公开(公告)日：2016-02-11
申请号：US14776886
申请日：2014-04-09
申请人： TOKYO ELECTRON LIMITED
发明人： Shinya Morikita , Eiichi Nishimura , Fumiko Yamashita
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31133 , B81C1/00031 , B81C2201/0149 , G03F7/0002 , H01J37/32091 , H01J37/32577 , H01L21/02118 , H01L21/02351 , H01L21/0271 , H01L21/31138 , H01L21/31144
摘要： A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.
摘要翻译：在目标物体的下层上形成图案的图案形成方法包括在下层上形成包含第一聚合物和第二聚合物并被构造成自组装的嵌段共聚物层; 处理目标物体以形成含有第一聚合物的第一区域和在嵌段共聚物层中含有第二聚合物的第二区域; 在对象物体的处理之后，在电容耦合等离子体处理装置中在其厚度方向的中间蚀刻第二区域; 在蚀刻第二区域之后，通过向上部电极施加负的DC电压并将二次电子照射到目标物体上，从等离子体处理装置的上部电极产生二次电子; 并且另外在照射二次电子之后蚀刻等离子体处理装置中的第二区域。

9. 发明授权

US09208997B2 Method of etching copper layer and mask 有权
标题翻译：蚀刻铜层和掩模的方法
公开(公告)号：US09208997B2
公开(公告)日：2015-12-08
申请号：US14058621
申请日：2013-10-21
申请人： Tokyo Electron Limited
发明人： Eiichi Nishimura , Masato Kushibiki , Takashi Sone , Akitaka Shimizu , Fumiko Yamashita
IPC分类号： C23F1/00 , H01J37/32 , C23F1/02 , H01L21/311 , H01L21/3213 , C23F4/00
CPC分类号： H01J37/32082 , C23F1/02 , C23F4/00 , H01J2237/334 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately.
摘要翻译：提供一种蚀刻目标物体的铜层的方法，包括在铜层上具有转印到铜层上的图案的掩模。该方法包括通过使用含有氢气的第一气体的等离子体蚀刻铜层; 并且通过使用沉积在目标物体上的含有氢气和气体的第二气体（以下称为“沉积气体”）的等离子体来处理目标物体。此外，交替地重复通过使用第一气体的等离子体对铜层的蚀刻和通过使用第二气体的等离子体来处理目标物体。

10. 发明申请

US20150079790A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20150079790A1
公开(公告)日：2015-03-19
申请号：US14356809
申请日：2012-11-16
申请人： TOKYO ELECTRON LIMITED
发明人： Eiichi Nishimura , Tadashi Kotsugi , Fumiko Yamashita , Kenji Adachi
IPC分类号： H01L21/308 , H01L21/3065
CPC分类号： H01L21/3088 , H01J37/32091 , H01L21/0337 , H01L21/3065 , H01L21/3081 , H01L21/3083 , H01L21/32137
摘要： This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing SF6 gas is used.
摘要翻译：该半导体器件制造方法具有：成膜步骤，其中形成氮化硅层或氧化硅层，使得形成在衬底上并图案化的含硅层的侧壁部分被覆盖与氮化硅层或氧化硅层; 以及等离子体蚀刻步骤，其中选择性地除去含硅层，并且留下形成在侧壁部分上的氮化硅层或氧化硅层。在等离子体蚀刻步骤中，使用含有SF 6气体的蚀刻气体。

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