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1. 发明申请

US20180247828A1 SYSTEMS FOR PERFORMING IN-SITU DEPOSITION OF SIDEWALL IMAGE TRANSFER SPACERS 审中-公开
公开(公告)号：US20180247828A1
公开(公告)日：2018-08-30
申请号：US15968285
申请日：2018-05-01
申请人： LAM RESEARCH CORPORATION
发明人： Jae Ho LEE , Changwoo LEE , Phil FRIDDLE , Stefan SCHMITZ , Naveed ANSARI , Michael GOSS , Noel SUN
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01J37/32366 , H01J2237/334 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0332 , H01L21/0334 , H01L21/0337 , H01L21/28132 , H01L21/28141 , H01L21/283 , H01L21/3086 , H01L21/31116
摘要： A system for performing a sidewall image transfer process includes a substrate processing chamber configured to process a substrate including a mandrel layer. A controller is configured to control the substrate processing chamber to, without the substrate being removed from the within the substrate processing chamber, etch the mandrel layer, subsequent to etching the mandrel layer, deposit a thin spacer layer on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls, subsequent to depositing the thin spacer layer, etch the thin spacer layer to remove the thin spacer layer such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains and, subsequent to etching the thin spacer layer, etch the mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.

2. 发明申请

US20180237912A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：US20180237912A1
公开(公告)日：2018-08-23
申请号：US15901100
申请日：2018-02-21
申请人： Tokyo Electron Limited
发明人： Yutaka TAKAHASHI , Masahiro MURATA , Hitoshi KATO
IPC分类号： C23C16/455 , C23C16/02 , C23C16/34
CPC分类号： C23C16/45536 , C23C16/02 , C23C16/0272 , C23C16/045 , C23C16/345 , C23C16/45544 , C23C16/45551 , H01J37/321 , H01J37/32357 , H01J37/32366 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J37/32752 , H01J37/32899
摘要： A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.

3. 发明申请

US20180226231A1 PLASMA TREATMENT OF AN ELASTOMERIC MATERIAL FOR ADHESION 审中-公开
公开(公告)号：US20180226231A1
公开(公告)日：2018-08-09
申请号：US15942024
申请日：2018-03-30
申请人： NIKE, Inc.
发明人： Jen-Chuan Lin , Chun-Wei Huang , Pu-Yuan Chang , Su-Wen Kao , Guo-Chang Wang
IPC分类号： H01J37/32 , A43B13/12 , B29C65/48 , A43D11/00 , A43D25/00 , B05D3/14 , C08J7/12 , A43B9/12 , B32B38/00 , B32B37/12 , H01J37/317 , C09J5/02 , B29C65/00 , A43B13/32 , B29L31/50
CPC分类号： H01J37/32366 , A43B9/12 , A43B13/12 , A43B13/32 , A43D11/00 , A43D25/00 , B05D3/144 , B29C65/48 , B29C66/026 , B29C66/45 , B29C66/95 , B29K2623/083 , B29L2031/504 , B32B37/1284 , B32B38/0008 , B32B2319/00 , B32B2437/02 , C08J7/123 , C09J5/02 , H01J37/317 , H01J37/32733 , H01J2237/335 , H05H2245/123
摘要： Elastomeric components, such as a shoe outsole, are treated with a plasma application to clean and activate the elastomeric component. The application of plasma is controlled to achieve a sufficient surface composition change to enhance adhesion characteristics while not adversely physically deforming the elastomeric component. The plasma treatment is applied to increase carbonyl functional group concentrations within an altered region of the elastomeric component to within at least a range of 2%-15% of carbon atomic percentage composition. The cleaning and activation is controlled, in part, by ensuring a defined height offset range is maintained between the elastomeric component and the plasma source by a generated tool path. The elastomeric component may then be adhered, with an adhesive, to another component.

4. 发明申请

US20180051375A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180051375A1
公开(公告)日：2018-02-22
申请号：US15469212
申请日：2017-03-24
申请人： Samsung Electronics Co., Ltd.
发明人： Minjong KIM , Seonggil PARK , Jaebeom PARK , Jung-soo YOON , Keeyoung JUN , Choongrae CHO , Jongwon HONG
IPC分类号： C23C16/50 , C23C16/04 , C23C16/455 , C23C16/458 , C23C16/52 , H01J37/32
CPC分类号： C23C16/50 , C23C16/04 , C23C16/45565 , C23C16/4586 , C23C16/52 , H01J37/32366 , H01J37/3244 , H01J37/3255 , H01J37/32715 , H01J37/32724
摘要： Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

5. 发明申请

US20170314132A1 PLASMA REACTOR HAVING DIVIDED ELECTRODES 审中-公开
公开(公告)号：US20170314132A1
公开(公告)日：2017-11-02
申请号：US15484706
申请日：2017-04-11
申请人： RETRO-SEMI TECHNOLOGIES, LLC.
发明人： Dong-Soo KIM , Min-Su JOO
IPC分类号： C23C16/505 , H01J37/32 , C23C16/458 , C23C16/455 , C23C16/52
CPC分类号： H01J37/32532 , C23C16/509 , H01J37/32082 , H01J37/32174 , H01J37/32366 , H01J37/3244 , H01J37/32541 , H01J37/32577 , H01J2237/3321
摘要： A plasma reactor for generating a plasma for use in depositing a thin film on a large area wafer, such as in the manufacturing of solar cells. A plasma electrode unit in the plasma reactor is divided into a plurality of discrete electrodes, and RF electric power is sequentially applied to the divided plasma electrodes in accordance with a predefined sequence of temporal intervals as controlled by a sequence control unit. The sequential application of RF power across the divided plasma electrode unit resolves a standing wave problem in the plasma applied over a large area corresponding to a large area wafer.

6. 发明申请

US20170110296A1 CONNECTION CONTROL METHOD 审中-公开
公开(公告)号：US20170110296A1
公开(公告)日：2017-04-20
申请号：US15391108
申请日：2016-12-27
申请人： Tokyo Electron Limited
发明人： Shinji Himori , Norikazu Yamada , Takeshi Ohse
IPC分类号： H01J37/32
CPC分类号： H01J37/32697 , H01J37/32091 , H01J37/32165 , H01J37/32366 , H01J37/32642 , H01J37/32706 , H01J37/32724 , H01J2237/327
摘要： A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.

7. 发明授权

US09627183B2 Plasma processing device, plasma processing method and method of manufacturing electronic devices 有权
公开(公告)号：US09627183B2
公开(公告)日：2017-04-18
申请号：US14340568
申请日：2014-07-25
申请人： Panasonic Corporation
发明人： Tomohiro Okumura
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01L21/324 , H01J37/321 , H01J37/3211 , H01J37/32366 , H01J37/3244 , H01J37/32522 , H01J37/32651 , H01J37/32733 , H01L21/02667
摘要： To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. A discharge suppression gas is introduced into a space between the inductively-coupled plasma torch unit and the substrate inside the chamber through a discharge suppression gas supply hole, thereby generating long plasma stably.

8. 发明申请

US20170076957A1 SYSTEMS AND METHODS FOR PERFORMING IN-SITU DEPOSITION OF SIDEWALL IMAGE TRANSFER SPACERS 有权
标题翻译：用于执行平台图像传输间隔的原位沉积的系统和方法
公开(公告)号：US20170076957A1
公开(公告)日：2017-03-16
申请号：US14851768
申请日：2015-09-11
申请人： LAM RESEARCH CORPORATION
发明人： Jae Ho Lee , Changwoo Lee , Phil Friddle , Stefan Schmitz , Naveed Ansari , Michael Goss , Noel Sun
IPC分类号： H01L21/311 , H01J37/32 , H01L21/283 , H01L21/033 , H01L21/02
CPC分类号： H01L21/31144 , H01J37/32366 , H01J2237/334 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0332 , H01L21/0334 , H01L21/0337 , H01L21/28132 , H01L21/28141 , H01L21/283 , H01L21/3086 , H01L21/31116
摘要： A method of performing a sidewall image transfer (SIT) process includes arranging a substrate within a substrate processing chamber, wherein the substrate includes a mandrel layer formed on the substrate and etching the mandrel layer to form a plurality of mandrels. The method further includes, without removing the substrate from within the substrate processing chamber and subsequent to etching the mandrel layer, depositing a thin spacer layer such that the thin spacer layer is formed on upper surfaces of the plurality of mandrels, sidewalls of the plurality of mandrels, and portions of the substrate between the sidewalls of the plurality of mandrels, subsequent to depositing the thin spacer layer, etching the thin spacer layer to remove the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains, and, subsequent to etching the thin spacer layer from the upper surfaces of the mandrels and the portions of the substrate between the sidewalls of the plurality of mandrels, etching the plurality of mandrels to remove the plurality of mandrels from the substrate such that only the thin spacer layer formed on the sidewalls of the plurality of mandrels remains on the substrate.
摘要翻译：执行侧壁图像转印（SIT）处理的方法包括在衬底处理室内布置衬底，其中衬底包括形成在衬底上的心轴层并蚀刻心轴层以形成多个心轴。所述方法还包括：在不从所述衬底处理室内移除所述衬底并且在蚀刻所述心轴层之后，沉积薄间隔层，使得所述薄间隔层形成在所述多个心轴的上表面上，心轴，以及在多个心轴的侧壁之间的衬底的部分，在沉积薄间隔层之后，蚀刻薄间隔层以从芯轴的上表面和衬垫的部分之间移除薄间隔层多个心轴的侧壁使得只有形成在多个心轴的侧壁上的薄间隔层保留，并且在从所述心轴的上表面和衬底的部分在侧壁之间蚀刻薄间隔层之后，多个心轴，蚀刻多个心轴以从衬底移除多个心轴使得只有形成在多个心轴的侧壁上的薄间隔层保留在基底上。

9. 发明授权

US09564285B2 Hybrid feature etching and bevel etching systems 有权
标题翻译：混合特征蚀刻和斜面蚀刻系统
公开(公告)号：US09564285B2
公开(公告)日：2017-02-07
申请号：US13942502
申请日：2013-07-15
申请人： Lam Research Corporation
发明人： Andreas Fischer , John Holland
IPC分类号： H01J37/32 , H01J37/00
CPC分类号： H01J37/00 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/32568 , H01J37/32642 , H01L2221/00
摘要： A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.
摘要翻译：一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。

10. 发明申请

US20160379844A1 TECHNIQUES AND APPARATUS FOR ANISOTROPIC METAL ETCHING 审中-公开
公开(公告)号：US20160379844A1
公开(公告)日：2016-12-29
申请号：US15263978
申请日：2016-09-13
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Thomas R. Omstead , Tristan MA , Ludovic Godet
IPC分类号： H01L21/3213 , H01J37/32 , C23F4/00 , H01L21/768 , H01L21/67
CPC分类号： H01L21/32136 , C23F4/00 , H01J37/32366 , H01J37/32412 , H01J37/32422 , H01J37/32449 , H01J2237/1502 , H01J2237/334 , H01J2237/3341 , H01L21/32135 , H01L21/32139 , H01L21/67069 , H01L21/76892
摘要： In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the substrate when a mask that defines an exposed area and protected area is disposed on the copper layer, wherein an altered layer is generated in the exposed area comprising a chemically reactive material; and exposing the copper layer to a molecular species that is effective to react with the chemically reactive material so as to remove the altered layer.

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