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1. 发明申请

US20190355574A1 SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190355574A1
公开(公告)日：2019-11-21
申请号：US16411404
申请日：2019-05-14
申请人： Tokyo Electron Limited
发明人： Itaru Kanno , Hiromi Kiyose , Gentaro Goshi , Naohiko Hamamura , Takuro Masuzumi , Kenji Sekiguchi , Satoru Tanaka , Teruomi Minami
IPC分类号： H01L21/02 , H01L21/67 , F26B3/28
摘要： A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

2. 发明申请

US20190051519A1 SUBSTRATE PROCESSING METHOD, RECORDING MEDIUM AND SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20190051519A1
公开(公告)日：2019-02-14
申请号：US16058032
申请日：2018-08-08
申请人： Tokyo Electron Limited
发明人： Kento Tsukano , Gentaro Goshi , Takuro Masuzumi , Hiromi Kiyose , Shogo Fukui
IPC分类号： H01L21/02 , H01L21/67 , H01L21/687 , B08B3/04 , B08B3/08 , B08B3/10
摘要： In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

3. 发明授权

US11133176B2 Substrate processing method, recording medium and substrate processing system 有权
公开(公告)号：US11133176B2
公开(公告)日：2021-09-28
申请号：US16058032
申请日：2018-08-08
申请人： Tokyo Electron Limited
发明人： Kento Tsukano , Gentaro Goshi , Takuro Masuzumi , Hiromi Kiyose , Shogo Fukui
IPC分类号： H01L21/02 , H01L21/67 , B08B3/10 , B08B3/04 , B08B3/08 , H01L21/687 , H01L21/677
摘要： In a substrate processing method, as a liquid film forming process, a liquid film of a processing liquid covering a surface of a substrate W is formed by supplying the processing liquid onto the surface of the substrate W while rotating the substrate W at a first rotation number. After the liquid film forming process, as a supply stopping process, a rotation number of the substrate W is set to be of a value equal to or less than the first rotation number and a supply of the processing liquid onto the substrate W is stopped. After the supply stopping process, as a liquid amount adjusting process, a liquid amount of the processing liquid forming the liquid film is reduced by setting the rotation number of the substrate W to a rotation number larger than the first rotation number.

4. 发明申请

US20180130675A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM 审中-公开
公开(公告)号：US20180130675A1
公开(公告)日：2018-05-10
申请号：US15801803
申请日：2017-11-02
申请人： Tokyo Electron Limited
发明人： Gentaro Goshi , Keisuke Egashira , Yosuke Kawabuchi , Hiromi Kiyose , Takuro Masuzumi , Hiroki Ohno , Kento Tsukano , Hiroshi Marumoto , Shotaro Kitayama
IPC分类号： H01L21/67 , H01L21/02 , B01J3/06 , B08B7/00 , B01J3/00
CPC分类号： H01L21/67034 , B01J3/008 , B01J3/06 , B08B7/0021 , H01L21/02057 , H01L21/02101 , H01L21/67051
摘要： A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. In the circulation process, the processing fluid is supplied into the processing container from the second fluid supply unit.

5. 发明申请

US20140373877A1 LIQUID PROCESSING APPARATUS AND LIQUID PROCESSING METHOD 审中-公开
标题翻译：液体加工设备和液体加工方法
公开(公告)号：US20140373877A1
公开(公告)日：2014-12-25
申请号：US14297723
申请日：2014-06-06
申请人： Tokyo Electron Limited
发明人： Shigehisa Inoue , Daisuke Nakayama , Katsufumi Matsuki , Takuro Masuzumi , Yuki Yoshida , Meitoku Aibara , Hiromi Kiyose , Takashi Uno , Hirotaka Maruyama , Kazuya Koyama , Takashi Nakazawa
IPC分类号： B08B3/02 , H01L21/67
CPC分类号： B08B3/02 , H01L21/67051
摘要： Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.
摘要翻译：公开了一种液体处理装置和液体处理方法，其中基板由液滴形式的处理液体处理。液体处理装置包括：第一处理液体喷射单元，被配置为将含有纯水的液滴形式的第一处理液喷射到基板的表面; 以及第二处理液体喷射单元，被配置为以液滴的形式将作为连续液体流的第二处理液体朝向由第一处理液体处理的基板的表面喷射。第二处理液将基板表面上的ζ电位反转为负ζ电位。

6. 发明授权

US10950465B2 Method of cleaning substrate processing apparatus and system of cleaning substrate processing apparatus 有权
公开(公告)号：US10950465B2
公开(公告)日：2021-03-16
申请号：US15826074
申请日：2017-11-29
申请人： Tokyo Electron Limited
发明人： Shotaro Kitayama , Gentaro Goshi , Hiroki Ohno , Keisuke Egashira , Yosuke Kawabuchi , Hiroshi Marumoto , Takuro Masuzumi , Kento Tsukano , Hiromi Kiyose
IPC分类号： H01L21/67 , B08B3/08 , B08B5/00 , F26B5/00 , B08B9/00 , C11D11/00 , C11D7/26 , B08B15/00
摘要： Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

7. 发明授权

US10692739B2 Substrate processing apparatus 有权
公开(公告)号：US10692739B2
公开(公告)日：2020-06-23
申请号：US15907522
申请日：2018-02-28
申请人： Tokyo Electron Limited
发明人： Yosuke Kawabuchi , Gentaro Goshi , Keisuke Egashira , Hiroki Ohno , Hiroshi Marumoto , Takuro Masuzumi , Kento Tsukano , Shotaro Kitayama
IPC分类号： F26B5/08 , H01L21/67 , F26B5/00 , H01L21/02 , F26B21/14
摘要： A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.

8. 发明申请

US20180138058A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20180138058A1
公开(公告)日：2018-05-17
申请号：US15805291
申请日：2017-11-07
申请人： Tokyo Electron Limited
发明人： Keisuke Egashira , Yosuke Kawabuchi , Gentaro Goshi , Hiroki Ohno , Hiroshi Marumoto , Takuro Masuzumi , Kento Tsukano , Shotaro Kitayama , Satoshi Okamura
IPC分类号： H01L21/67 , B08B3/08
CPC分类号： H01L21/67034 , B08B3/08 , H01L21/67017 , H01L21/67051 , H01L21/67173 , H01L21/6719 , H01L21/67248
摘要： A substrate processing apparatus of the present disclosure includes: a processing container; and a supply line which connects the processing container with a fluid source that delivers a supercritical processing fluid. A first opening/closing valve is provided in the supply line. A first throttle is provided on a downstream side of the first opening/closing valve to change the supercritical processing fluid flowing through the supply line to a gaseous state when a pressure within the processing container is equal to or lower than a critical pressure of the processing fluid. A first filter is provided on a downstream side of the first throttle.

9. 发明申请

US20160370810A1 PROCESSING APPARATUS, PROCESSING METHOD, AND STORAGE MEDIUM 审中-公开
标题翻译：加工设备，加工方法和储存介质
公开(公告)号：US20160370810A1
公开(公告)日：2016-12-22
申请号：US15181770
申请日：2016-06-14
申请人： Tokyo Electron Limited
发明人： Keigo Satake , Kenji Nakamizo , Yuichi Douki , Takuro Masuzumi
IPC分类号： G05D7/06
CPC分类号： G05D7/0635 , G05B2219/41303 , H01L21/67051 , H01L21/67253
摘要： Disclosed is a processing apparatus including a chamber, at least one nozzle, a measuring unit, an opening/closing unit, and a controller. The chamber accommodates a workpiece therein. The nozzle is provided in the chamber to supply a processing fluid toward the workpiece. The measuring unit measures a supply flow rate of the processing fluid supplied to the nozzle. The opening/closing unit performs opening/closing of a flow path of the processing fluid to be supplied to the nozzle. The controller outputs opening and closing operation signals at a preset timing. After outputting the opening operation signal, the controller calculates an integrated amount of the processing fluid based on a measurement result of the measuring unit, and performs an output timing change processing to change a timing of outputting the opening or closing operation signal from the preset timing based on the calculated integrated amount.
摘要翻译：公开了一种包括室，至少一个喷嘴，测量单元，打开/关闭单元和控制器的处理设备。该室容纳工件。喷嘴设置在腔室中以朝向工件供应处理流体。测量单元测量供应到喷嘴的处理流体的供应流量。打开/关闭单元执行要供给到喷嘴的处理流体的流路的打开/关闭。控制器以预设的定时输出打开和关闭操作信号。在输出打开操作信号之后，控制器基于测量单元的测量结果计算处理流体的积分量，并且执行输出定时改变处理以改变从预设定时输出打开或关闭操作信号的定时基于计算的积分量。

10. 发明授权

US11201050B2 Substrate processing method, recording medium and substrate processing apparatus 有权
公开(公告)号：US11201050B2
公开(公告)日：2021-12-14
申请号：US16411404
申请日：2019-05-14
申请人： Tokyo Electron Limited
发明人： Itaru Kanno , Hiromi Kiyose , Gentaro Goshi , Naohiko Hamamura , Takuro Masuzumi , Kenji Sekiguchi , Satoru Tanaka , Teruomi Minami
IPC分类号： F26B3/34 , H01L21/02 , F26B3/28 , H01L21/67
摘要： A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

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