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1. 发明申请

US20130181040A1 SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造系统和半导体器件制造方法
公开(公告)号：US20130181040A1
公开(公告)日：2013-07-18
申请号：US13723771
申请日：2012-12-21
申请人： Tokyo Electron Limited
发明人： Shinjiro Watanabe , Itaru Iida , Muneo Harada
IPC分类号： H01L21/48
CPC分类号： H01L21/4814 , H01L21/683 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L24/95 , H01L25/0657 , H01L25/117 , H01L25/50 , H01L2224/13101 , H01L2224/16145 , H01L2224/75101 , H01L2224/75272 , H01L2224/7598 , H01L2224/81011 , H01L2224/81065 , H01L2224/81075 , H01L2224/81139 , H01L2224/81815 , H01L2924/01007 , H01L2924/014 , H01L2924/00014
摘要： Provided is a semiconductor device manufacturing system according to the present disclosure which manufactures a semiconductor device using a chip stack. The system includes a chip reducing apparatus and a chip bonding apparatus, the chip reducing apparatus includes a reduction chamber, an oxide film of the surface of the terminal of each chip is reduced in the reduction chamber, the chip bonding apparatus includes a reflow chamber isolated from the reduction chamber, a solder ball is bonded to the terminal of each chip in the reflow chamber, and the chip bonding apparatus is installed separately from the chip reducing apparatus.
摘要翻译：提供了根据本公开的半导体器件制造系统，其制造使用芯片堆叠的半导体器件。该系统包括减芯装置和芯片接合装置，所述减芯装置包括还原室，所述还原室中的每个芯片的端子表面的氧化膜被还原，所述芯片接合装置包括隔离的回流室从还原室将焊球接合到回流室中的每个芯片的端子，并且芯片接合装置与芯片减少装置分开地安装。

2. 发明授权

US09349584B2 Method for depositing a film and film deposition apparatus 有权
标题翻译：沉积薄膜和薄膜沉积设备的方法
公开(公告)号：US09349584B2
公开(公告)日：2016-05-24
申请号：US14396116
申请日：2013-04-22
申请人： Tokyo Electron Limited
发明人： Kippei Sugita , Hiroyuki Hashimoto , Muneo Harada
IPC分类号： H01L21/02 , H01L21/768 , C23C16/44 , C23C16/455 , C23C16/52 , B05D1/36 , B05D1/00
CPC分类号： H01L21/02118 , B05D1/36 , B05D1/60 , B05D2490/50 , C23C16/4408 , C23C16/455 , C23C16/52 , H01L21/022 , H01L21/02271 , H01L21/02337 , H01L21/02359 , H01L21/76831 , H01L21/76898
摘要： A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.
摘要翻译：提供一种沉积薄膜的方法。在该方法中，将待处理对象容纳在处理室中，并且由聚合物薄膜制成的绝缘膜通过提供由酸酐组成的第一源气体和将由二胺构成的第二源气体排出到处理室中。接下来，通过停止将第二源气体供应到处理室中并且将第一源气体连续地供应到处理室中，来改变绝缘膜以具有阻挡功能。

3. 发明申请

US20150087158A1 METHOD FOR DEPOSITING A FILM AND FILM DEPOSITION APPARATUS 有权
标题翻译：沉积薄膜和薄膜沉积装置的方法
公开(公告)号：US20150087158A1
公开(公告)日：2015-03-26
申请号：US14396116
申请日：2013-04-22
申请人： Tokyo Electron Limited
发明人： Kippei Sugita , Hiroyuki Hashimoto , Muneo Harada
IPC分类号： H01L21/02 , C23C16/52 , C23C16/44 , C23C16/455
CPC分类号： H01L21/02118 , B05D1/36 , B05D1/60 , B05D2490/50 , C23C16/4408 , C23C16/455 , C23C16/52 , H01L21/022 , H01L21/02271 , H01L21/02337 , H01L21/02359 , H01L21/76831 , H01L21/76898
摘要： A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.
摘要翻译：提供一种沉积薄膜的方法。在该方法中，将待处理对象容纳在处理室中，并且由聚合物薄膜制成的绝缘膜通过提供由酸酐组成的第一源气体和将由二胺构成的第二源气体排出到处理室中。接下来，通过停止将第二源气体供应到处理室中并且将第一源气体连续地供应到处理室中，来改变绝缘膜以具有阻挡功能。

4. 发明申请

US20130216699A1 METHOD AND APPARATUS FOR FILLING METAL PASTE, AND METHOD FOR FABRICATING VIA PLUG 审中-公开
标题翻译：填充金属膏的方法和装置，以及通过插入方法制造的方法
公开(公告)号：US20130216699A1
公开(公告)日：2013-08-22
申请号：US13766838
申请日：2013-02-14
申请人： Tokyo Electron Limited
发明人： Eiji Yamaguchi , Michikazu Nakamura , Muneo Harada
IPC分类号： H05K3/00
CPC分类号： H05K3/0094 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a metal paste filling apparatus that fills the metal paste in a non-through hole of a substrate conveniently and efficiently without producing a void.The metal paste filling apparatus includes a pad, an exhaust unit, a metal paste supply unit, and a controller. One or more exhaust ports and one or more inlet ports are formed in the acting surface of the pad. The exhaust unit includes a vacuum apparatus connected to a gas flow path in the pad through an exhaust tube, and a direction switching valve installed in the way of the exhaust tube. The metal paste supply unit includes a syringe unit connected to a paste flow path in the pad. The syringe unit includes a paste container, a compressed air supply source, a suck-back valve, and a regulator.
摘要翻译：公开了一种在不产生空隙的情况下方便且有效地填充基板的非贯通孔中的金属糊料的金属糊料填充装置。金属膏填充装置包括垫，排气单元，金属糊供给单元和控制器。一个或多个排气口和一个或多个入口端口形成在垫的作用表面中。排气单元包括通过排气管连接到垫中的气体流路的真空装置和安装在排气管的方向上的方向切换阀。金属膏供给单元包括连接到垫中的浆料流路的注射器单元。注射器单元包括糊剂容器，压缩空气供应源，回吸阀和调节器。

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