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1. 发明授权

US08497666B2 Semiconductor device and power source device 有权
标题翻译：半导体器件和电源器件
公开(公告)号：US08497666B2
公开(公告)日：2013-07-30
申请号：US12980529
申请日：2010-12-29
申请人： Toshio Nagasawa
发明人： Toshio Nagasawa
IPC分类号： G05F1/10 , H02M1/00
CPC分类号： H02M3/1584 , H01L24/37 , H01L24/40 , H01L2224/05553 , H01L2224/32245 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/3011 , H02M2003/1586 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A multi-phase power source device capable of easily changing the number of phases is realized. For example, a plurality of drive units POL[1]-POL[4] corresponding to the number of phases are provided, wherein each POL[n] receives a phase input signal PHI[n] serving as a pulse signal, and generates a phase output signal PHO[n] by delaying PHI[n] by a predetermined cycles of a clock signal CLK. PHI[n] and PHO[n] of each POL[n] are coupled in a ring, wherein each POL[n] performs a switching operation with PHI[n] or PHO[n] as a starting point. In this case, each POL[n] charges and discharges a capacitor Cct commonly coupled to each POL[n] with an equal current, and a frequency of CLK is determined based on this charge and discharge rate. That is, if the number of phases increases n times, the frequency of CLK will be automatically controlled to n times.
摘要翻译：实现能够容易地改变相位数的多相电源装置。例如，提供与相位数相对应的多个驱动单元POL [1] -POL [4]，其中每个POL [n]接收用作脉冲信号的相位输入信号PHI [n]，并产生相位输出信号PHO [n]通过将PHI [n]延迟时钟信号CLK的预定周期。每个POL [n]的PHI [n]和PHO [n]耦合在一个环中，其中每个POL [n]以PHI [n]或PHO [n]为起点执行切换操作。在这种情况下，每个POL [n]以相等的电流对每个POL [n]共同耦合的电容器Cct进行充电和放电，并且基于该充电和放电速率确定CLK的频率。也就是说，如果相数增加n次，则CLK的频率将自动控制为n次。

2. 发明授权

US07902799B2 Switching power supply device and semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07902799B2
公开(公告)日：2011-03-08
申请号：US12403966
申请日：2009-03-13
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/10 , G05F1/40
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

3. 发明申请

US20090179620A1 SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源设备和半导体集成电路
公开(公告)号：US20090179620A1
公开(公告)日：2009-07-16
申请号：US12403966
申请日：2009-03-13
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，即使电源电压VDD低，也能够实现高电位侧开关元件M1的充分驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

4. 发明申请

US20070159150A1 Switching power supply device and a semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US20070159150A1
公开(公告)日：2007-07-12
申请号：US10587215
申请日：2005-01-14
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/00
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：本发明提供一种开关电源和半导体集成电路，其即使在电源电压VDD低的情况下也能够实现高电位侧开关元件M 1的足够的驱动电压的获取。在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定电压端子之间设置由自举电容和MOSFET构成的升压电压作为开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当使MOSFET成为OFF状态时，并且在一个源极/漏极区域和衬底栅极之间的结二极管相对于由引导件形成的升压电压是反向的容量。

5. 发明授权

US08604764B2 Switching power supply device and a semiconductor integrated circuit 有权
公开(公告)号：US08604764B2
公开(公告)日：2013-12-10
申请号：US13613359
申请日：2012-09-13
申请人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： Kyoichi Hosokawa , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： G05F1/40 , G05F1/10
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

6. 发明申请

US20120086062A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20120086062A1
公开(公告)日：2012-04-12
申请号：US13270329
申请日：2011-10-11
申请人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
发明人： KYOICHI HOSOKAWA , Ryotaro Kudo , Toshio Nagasawa , Koji Tateno
IPC分类号： H01L27/06
CPC分类号： H02M3/1588 , G05F1/44 , H02M7/538 , H03F3/217 , H03F2200/351 , H03F2200/78 , H03K17/063 , H03K17/687 , Y02B70/1466
摘要： In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.
摘要翻译：在开关电源中，其通过响应于PWM信号进行开关动作的开关元件来控制在电感器中流动的电流，并且通过串联设置在电感器中的电容器形成输出电压，在开关元件的输出节点和预定的电压端子之间设置由自举电容构成的MOSFET和MOSFET。升压电压用作开关元件的驱动电路的工作电压，另一个源极/漏极区域和衬底栅极彼此连接，使得当MOSFET被制成断开状态时，以及在二极管一个源极/漏极区域和衬底栅极相对于由自举能力形成的升压电压是反向的。

7. 发明申请

US20080129273A1 POWER SUPPLY DEVICE AND SWITCHING POWER SUPPLY DEVICE 有权
标题翻译：电源装置和开关电源装置
公开(公告)号：US20080129273A1
公开(公告)日：2008-06-05
申请号：US12017706
申请日：2008-01-22
申请人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
发明人： Koji TATENO , Ryotaro Kudo , Shin Chiba , Kyoichi Hosokawa , Toshio Nagasawa
IPC分类号： G05F3/16
CPC分类号： H02M3/1588 , H01L2224/48137 , H01L2224/48247 , H02M2001/0009 , Y02B70/1466
摘要： In a driver circuit constructing a switching power supply device that switches power transistors passing a current through a coil by a PWM mode, a current detection transistor, which is smaller in size than the low-potential side power transistor, and a current detection resistor are provided in parallel to the low-potential side power transistor. The same control voltage as the power transistor is applied to the control terminal of the current detection transistor. An operational amplifier is formed, that has the potential of the connection node between the current detection transistor and the current detection resistor applied to its inverse input terminal and a feedback loop, so as to make a pair of input terminals of the operational amplifier be at the same potential. A signal produced by the current detection resistor is thus outputted as a current detection signal.
摘要翻译：在构成开关电源装置的驱动电路中，通过PWM模式切换通过线圈的电流的开关电源装置，尺寸小于低电位侧功率晶体管的电流检测晶体管和电流检测电阻器与低电位侧功率晶体管并联提供。与功率晶体管相同的控制电压施加到电流检测晶体管的控制端。形成运算放大器，其具有电流检测晶体管和施加到其反相输入端的电流检测电阻之间的连接节点的电位和反馈环路，以使运算放大器的一对输入端子处于同样的潜力。因此，由电流检测电阻器产生的信号作为电流检测信号被输出。

8. 发明申请

US20060086973A1 Semiconductor integrated circuit and a semiconductor device 有权
标题翻译：半导体集成电路和半导体器件
公开(公告)号：US20060086973A1
公开(公告)日：2006-04-27
申请号：US11254145
申请日：2005-10-20
申请人： Mitsuharu Hitani , Toshio Nagasawa , Akihiro Tamura
发明人： Mitsuharu Hitani , Toshio Nagasawa , Akihiro Tamura
IPC分类号： H01L29/76
CPC分类号： H01L29/7816 , H01L27/0727 , H01L29/086 , H01L29/1083 , H01L2224/05554 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2924/13091 , H02M3/1588 , Y02B70/1466 , H01L2924/00
摘要： A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.
摘要翻译：一种具有对具有LDMOS晶体管的源极/漏极电极的变化的快速响应的半导体集成电路。晶体管具有形成在第一导电型半导体衬底中的第二导电类型的第一阱区; 形成在第一阱区中的第一导电类型的第二阱区; 形成在第二阱区中的第二导电型第三阱区; 漏区，形成在所述第二阱区中; 源区域，形成在第三阱区域中; 在漏极区域和源极区域之间的第三阱区域上形成的栅极电极，以及形成在栅极电极和漏极区域之间的绝缘层。半导体衬底和源极区之间的寄生电容以及衬底和漏极区之间的寄生电容分别串联。

9. 发明授权

US4518353A Vacuum sintering furnace 失效
标题翻译：真空烧结炉
公开(公告)号：US4518353A
公开(公告)日：1985-05-21
申请号：US624611
申请日：1984-06-26
申请人： Takashi Banno , Tadashi Seki , Masafumi Kawaguchi , Yukio Tanaka , Morikatsu Iwasaki , Toshio Nagasawa
发明人： Takashi Banno , Tadashi Seki , Masafumi Kawaguchi , Yukio Tanaka , Morikatsu Iwasaki , Toshio Nagasawa
IPC分类号： B22F3/10 , F27B5/04 , F27B9/04 , F27D17/00
CPC分类号： F27B5/04
摘要： The disclosure relates to a vacuum sintering furnace having a lubricant eliminating section, sintering section and cooling section which are aligned in series and connected by connecting hood means to each other so that a workpiece may be directly transferred to the following section without exposure of the workpiece to outside air. The connecting hood means comprises doors for selectively opening and closing the boundaries between the neighboring sections. Furthermore, the lubricant eliminating section is provided with a lubricant trapping device mounted on an exhaust line connecting a furnace body and a vacuum pump to each other, thereby the stable operation of the vacuum pump is ensured.
摘要翻译：本发明涉及一种具有润滑剂消除部分，烧结部分和冷却部分的真空烧结炉，它们串联排列并通过连接罩装置相互连接，使得工件可以直接传递到随后的部分而不暴露工件到外面的空气。连接罩装置包括用于选择性地打开和关闭相邻部分之间的边界的门。此外，润滑剂消除部设置有安装在连接炉体和真空泵的排气管路上的润滑剂捕集装置，从而确保真空泵的稳定运行。

10. 发明授权

US4412125A Heat-shrinkable cover 失效
标题翻译：热收缩盖
公开(公告)号：US4412125A
公开(公告)日：1983-10-25
申请号：US424092
申请日：1982-09-27
申请人： Toshio Nagasawa , Yoshio Nishihara
发明人： Toshio Nagasawa , Yoshio Nishihara
IPC分类号： H05B3/20 , B29C47/02 , B29C61/06 , B29C61/10 , B29C65/34 , B29C70/68 , F16L47/22 , H02G1/14 , H05B3/36 , H05B3/58 , H05B3/10
CPC分类号： B29C70/687 , B29C47/0021 , B29C47/0026 , B29C61/0625 , B29C61/10 , B29C65/342 , B29C65/3428 , B29C65/3432 , B29C65/344 , B29C65/3476 , B29C66/73715 , B29C66/73921 , F16L47/22 , H05B3/36 , H05B3/58 , B29C47/027 , B29C66/73711 , B29C66/73712 , H05B2203/004 , H05B2203/005 , H05B2203/014 , H05B2203/017 , Y10S174/08 , Y10T428/1328
摘要： An electrical heating element material of a sheet form is provided, which is comprised of a web of a synthetic resin having a plurality of metal conductor wires arranged therein in parallel to one another along the longitudinal direction of the web. The web is folded in succession at predetermined intervals along folding lines inclined at a small acute angle to the transverse direction of the web to form a substantially two-layer parallelogrammatic sheet. Considering the small angle, the sheet is, for practical purposes, rectangular. The electrical heating element material is prepared by supplying a plurality of metal conductor wires arranged in parallel to one another into a cross-head type extrusion die, separately supplying a thermoplastic resin into said die, co-extruding the resin together with the wires to form a web, folding the web in succession at predetermined intervals along folding lines inclined at an acute angle to the transverse direction of the web to form the two-layer rectangular sheet, and then, optionally, bonding together the two layers. The electrical heating element material may be used as a heat-shrinkable cover, which is comprised of a heat-shrinkable synthetic resin member and the electrical heating element material combined with the heat-shrinkable resin member substantially over the entire region thereof.

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