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1. 发明授权

US09159814B2 Memory structure and method for forming same 有权
标题翻译：记忆结构及其形成方法
公开(公告)号：US09159814B2
公开(公告)日：2015-10-13
申请号：US13983379
申请日：2013-05-31
申请人： Tsinghua University
发明人： Libin Liu , Jing Wang , Renrong Liang
IPC分类号： H01L27/115 , H01L29/66 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66825 , H01L27/11556 , H01L27/11582 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： A memory structure and a method for forming the same are provided. The memory structure comprises: a substrate; a plurality of channel structures formed on the substrate, in which the plurality of channel structures are parallel with each other, each channel structure comprises a plurality of single crystal semiconductor layers and a plurality of oxide layers alternately stacked in a direction perpendicular to the substrate, and at least one of the plurality of oxide layers is a single crystal oxide layer; and a plurality of gate structures matched with the plurality of channel structures, in which each gate structure comprises a gate dielectric layer immediately adjacent to the plurality of channel structures and a gate electrode layer immediately adjacent to the gate dielectric layer.
摘要翻译：提供了一种记忆结构及其形成方法。存储器结构包括：衬底; 多个沟道结构，其形成在所述基板上，所述多个沟道结构彼此平行，每个沟道结构包括沿垂直于所述衬底的方向交替堆叠的多个单晶半导体层和多个氧化物层，并且所述多个氧化物层中的至少一个是单晶氧化物层; 以及与多个沟道结构匹配的多个栅极结构，其中每个栅极结构包括与多个沟道结构紧邻的栅极电介质层和紧邻栅极电介质层的栅极电极层。

2. 发明授权

US08927966B2 Dynamic random access memory unit and method for fabricating the same 有权
标题翻译：动态随机存取存储单元及其制造方法
公开(公告)号：US08927966B2
公开(公告)日：2015-01-06
申请号：US13703722
申请日：2012-10-18
申请人： Tsinghua University
发明人： Libin Liu , Renrong Liang , Jing Wang , Jun Xu
IPC分类号： H01L31/00 , H01L29/78 , H01L29/66 , H01L27/108 , H01L21/84 , H01L29/775 , H01L27/12
CPC分类号： H01L29/775 , H01L21/84 , H01L27/10802 , H01L27/10844 , H01L27/1203 , H01L29/66439 , H01L29/66795 , H01L29/78 , H01L29/7841 , H01L29/785
摘要： A dynamic random access memory unit and a method for fabricating the same are provided. The dynamic random access memory unit comprises: a substrate; an insulating buried layer formed on the substrate; a body region formed on the insulating buried layer and used as a charge storing region; two isolation regions formed on the body region, in which a semiconductor contact region is formed between the isolation regions and is a charge channel; a source, a drain and a channel region formed on the isolation regions and the semiconductor contact region respectively and constituting a transistor operating region which is partially separated from the charge storing region by the isolation regions and connected with the charge storing region via the charge channel; a gate dielectric layer formed on the transistor operating region, a gate formed on the gate dielectric layer; a source metal contact layer, a drain metal contact layer.
摘要翻译：提供了动态随机存取存储单元及其制造方法。动态随机存取存储器单元包括：衬底; 形成在基板上的绝缘掩埋层; 形成在绝缘掩埋层上并用作电荷存储区域的体区; 形成在体区的两个隔离区，其中在隔离区之间形成半导体接触区，并且是电荷通道; 分别形成在所述隔离区域和所述半导体接触区域上的源极，漏极和沟道区域，并且构成晶体管工作区域，所述晶体管工作区域由所述隔离区域部分地与所述电荷存储区域分离，并且经由所述充电沟道与所述电荷存储区域连接 ; 形成在所述晶体管工作区上的栅介质层，形成在所述栅介质层上的栅极; 源极金属接触层，漏极金属接触层。

3. 发明申请

US20140291752A1 MEMORY STRUCTURE AND METHOD FOR FORMING SAME 有权
标题翻译：记忆结构及其形成方法
公开(公告)号：US20140291752A1
公开(公告)日：2014-10-02
申请号：US13983379
申请日：2013-05-31
申请人： Tsinghua University
发明人： Libin Liu , Jing Wang , Renrong Liang
IPC分类号： H01L27/115
CPC分类号： H01L29/66825 , H01L27/11556 , H01L27/11582 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： A memory structure and a method for forming the same are provided. The memory structure comprises: a substrate; a plurality of channel structures formed on the substrate, in which the plurality of channel structures are parallel with each other, each channel structure comprises a plurality of single crystal semiconductor layers and a plurality of oxide layers alternately stacked in a direction perpendicular to the substrate, and at least one of the plurality of oxide layers is a single crystal oxide layer; and a plurality of gate structures matched with the plurality of channel structures, in which each gate structure comprises a gate dielectric layer immediately adjacent to the plurality of channel structures and a gate electrode layer immediately adjacent to the gate dielectric layer.
摘要翻译：提供了一种记忆结构及其形成方法。存储器结构包括：衬底; 多个沟道结构，其形成在所述基板上，所述多个沟道结构彼此平行，每个沟道结构包括沿垂直于所述衬底的方向交替堆叠的多个单晶半导体层和多个氧化物层，并且所述多个氧化物层中的至少一个是单晶氧化物层; 以及与多个沟道结构匹配的多个栅极结构，其中每个栅极结构包括与多个沟道结构紧邻的栅极电介质层和紧邻栅极电介质层的栅电极层。

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