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1. 发明申请

US20210371442A1 ORGANOMETALLIC COMPOUNDS 有权
公开(公告)号：US20210371442A1
公开(公告)日：2021-12-02
申请号：US17263700
申请日：2019-07-26
申请人： Umicore AG & Co. KG
发明人： Wolf SCHORN , Annika FREY , Eileen WÖRNER , Angelino DOPPIU , Ralf KARCH
IPC分类号： C07F15/06 , C23C16/18
摘要： The present patent application relates to novel allyl cobalt complexes, to a process for their preparation and to their use for vapor deposition.

2. 发明申请

US20220056061A1 ORGANOMETALLIC COMPOUNDS 有权
公开(公告)号：US20220056061A1
公开(公告)日：2022-02-24
申请号：US17312483
申请日：2019-11-28
申请人： UMICORE AG & CO. KG
发明人： Susanne HERRITSCH , Joerg SUNDERMEYER , Andreas RIVAS NASS , Oliver BRIEL , Ralf KARCH , Wolf SCHORN , Annika FREY , Angelino DOPPIU , Eileen WOERNER
IPC分类号： C07F11/00 , C23C16/455 , C23C16/18
摘要： The invention relates to a two-stage synthesis for the production of bis(tertbutylimido)bis(dialkylamido)tungsten compounds according to the general formula [W(NtBu)2(NRARB)2] (I), starting from [W(NtBu)2(NHtBu)2]. The invention also relates to compounds according to the general formula [W(NtBu)2(NRARB)2] (I), obtainable according to the claimed method, compounds according to general formula [W(NtBu)2(NRARB)2] (I), with the exception of [W(NtBu)2(NMe2)2] and [W(NtBu)2(NEtMe)2], the use of a compound [W(NtBu)2(NRARB)2] (I), and a substrate which, on a surface, has a tungsten layer or a tungsten-containing layer. Defined bis(tertbutylimido)bis(dialkylamido)tungsten compounds of the type [W(NtBu)2(NRARB)2] (I) can be produced easily, economically and reproducibly in high purity and good yields by means of the described method. On account of their high purity, the compounds are suitable for producing high-quality substrates which have tungsten layers or tungsten-containing layers.

3. 发明申请

US20160207941A1 METHOD FOR PRODUCING ALKYL-INDIUM COMPOUNDS AND THE USE THEREOF 有权
标题翻译：生产碱金属化合物的方法及其用途
公开(公告)号：US20160207941A1
公开(公告)日：2016-07-21
申请号：US14913026
申请日：2014-08-18
申请人： UMICORE AG & CO. KG
发明人： Joerg SUNDERMEYER , Annika FREY , Wolf SCHORN , David GROSSE-HAGENBROCK , Ralf KARCH , Andreas RIVAS-NASS , Eileen WOERNER , Angelino DOPPIU
IPC分类号： C07F5/00
CPC分类号： C07F5/00
摘要： The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.
摘要翻译：本发明涉及一种以高产率和高选择性和纯度成本有效且环保地生产二烷基氯化铟的方法。根据本发明生产的二烷基氯化铟特别适合于高纯度和高纯度产生含铟前体的高纯度和高产率的高纯度和高产率。作为高纯度的结果，可以生产的含铟前体特别适用于金属有机化学气相沉积（MOCVD）或金属有机气相外延（MOVPE）。根据本发明的新颖方法的特征在于该方法的改进执行，特别是快速过程控制。由于目标广泛地使用具有成本效益且环境影响较小的原材料，该方法也适用于工业规模。

4. 发明申请

US20210206790A1 ORGANOMETALLIC COMPOUNDS FOR THE MANUFACTURE OF A SEMICONDUCTOR ELEMENT OR ELECTRONIC MEMORY 有权
公开(公告)号：US20210206790A1
公开(公告)日：2021-07-08
申请号：US17263200
申请日：2019-07-26
申请人： UMICORE AG & CO. KG
发明人： Nicholas RAU , Jörg SUNDERMEYER , Henrik SCHUMANN , Andreas RIVAS NASS , Annika FREY , Wolf SCHORN , Eileen WOERNER , Ralf KARCH , Angelino DOPPIU
IPC分类号： C07F15/00 , C23C16/455 , C23C16/18 , H01L21/02
摘要： The invention relates to compounds in accordance with the general formula [Ru(arene)(Ra—N═CR1—CR3═N—Rb)] or [Ru(arene)((Rc,Rd)N—N═CRH1—CRH3═N—N(Re,Rf))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R1, R3, RH1, RH3 and Ra-Rf are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X2]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.

5. 发明申请

US20210163502A1 PRODUCTION OF TRIALKYLINDIUM COMPOUNDS IN THE PRESENCE OF CARBOXYLATES 有权
公开(公告)号：US20210163502A1
公开(公告)日：2021-06-03
申请号：US16616553
申请日：2018-05-25
申请人： Umicore AG & Co. KG
发明人： Wolf SCHORN , Ralf KARCH , Annika FREY , Angelino DOPPIU , Andreas RIVAS NASS , Eileen WOERNER
IPC分类号： C07F5/00 , H01L21/02 , C23C16/18
摘要： The invention relates to methods for the production of trialkylindium (InR3), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR3), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.

6. 发明申请

US20190194229A1 METHOD FOR PRODUCING ALKYL-INDIUM COMPOUNDS AND THE USE THEREOF 审中-公开
公开(公告)号：US20190194229A1
公开(公告)日：2019-06-27
申请号：US16287674
申请日：2019-02-27
申请人： UMICORE AG & CO. KG
发明人： Joerg SUNDERMEYER , Annika FREY , Wolf SCHORN , Ralf KARCH , Andreas RIVAS-NASS , Eileen WOERNER , Angelino DOPPIU
IPC分类号： C07F5/00
摘要： The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

7. 发明申请

US20170081344A1 METHOD FOR PRODUCING TRIALKYLGALLIUM COMPOUNDS AND THE USE THEREOF 审中-公开
公开(公告)号：US20170081344A1
公开(公告)日：2017-03-23
申请号：US15126043
申请日：2015-03-12
申请人： Umicore AG & Co. KG
发明人： Wolf SCHORN , Jörg SUNDERMEYER , Annika FREY , Ralf KARCH , Andreas RIVAS-NASS , Eileen WOERNER , Angelino DOPPIU
IPC分类号： C07F5/00 , C23C16/18 , H01L21/02
CPC分类号： C07F5/00 , C23C16/18 , H01L21/0262
摘要： The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula: R3Ga in high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl2) or dialkylgallium chloride/alkylgallium dichloride mixture (R2GaCl/RGaCl2). The RGaCl2 obtained or the R2GaCl/RGaCl2 mixture also forms part of the subject-matter of the present invention.The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale.The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapour deposition (MOCVD) or metal-organic vapour phase epitaxy (MOVPE) in semiconductor and microsystem technology.

8. 发明申请

US20220153768A1 METAL COMPLEXES FOR GAS-PHASE THIN-FILM DEPOSITION 有权
公开(公告)号：US20220153768A1
公开(公告)日：2022-05-19
申请号：US17599126
申请日：2020-03-27
申请人： Umicore AG & CO. KG
发明人： Joerg SUNDERMEYER , Henrik SCHUMANN , Wolf SCHORN , Nicholas RAU , Annika FREY , Ralf KARCH , Eileen WOERNER , Angelino DOPPIU
IPC分类号： C07F15/00 , C23C16/18 , C23C16/455
摘要： Metal complexes of formula (I) are described: [M(L1)x(L2)y(hydra)z]n formula (I) wherein: M=metal atom having an atomic number selected from the ranges a) through c): a) 12, 21 to 34, with the exception of 30, b) 39 to 52, with the exception of 48, c) 71 to 83, with the exception of 80, L1=neutral or anionic ligand, with x=0 or 1, L2=neutral or anionic ligand, with y=0 or 1, (hydra)=acetone dimethylhydrazone monoanion, with z=1, 2, or 3, n=1 or 2, and the total charge of the complex is 0.

9. 发明申请

US20210388006A1 METHOD FOR PRODUCING DIALKYLAMIDO ELEMENT COMPOUNDS 有权
公开(公告)号：US20210388006A1
公开(公告)日：2021-12-16
申请号：US17273787
申请日：2019-09-05
申请人： UMICORE AG & CO, KG
发明人： Susanne HERRITSCH , Joerg SUNDERMEYER , Angelino DOPPIU , Annika FREY , Ralf KARCH , Andreas RIVAS NASS , Wolf SCHORN , Eileen WOERNER
IPC分类号： C07F5/06 , C07F9/06 , C07F7/00 , C07F9/00 , C07F9/68 , C07F9/90 , C07F9/94 , C07F7/02
摘要： The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′)x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′)4] and hydrogen, and then the formed M[Al(NRR′)4] is reacted with EXx in order to form E(NRR′)x and M[AlX4], wherein M=Li, Na, or K, R=CnH2n+1, where n=1 to 20, and independently thereof R′=CnH2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

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