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1. 发明申请

US20190259560A1 CONDUCTIVE BEAM OPTIC CONTAINING INTERNAL HEATING ELEMENT 审中-公开
公开(公告)号：US20190259560A1
公开(公告)日：2019-08-22
申请号：US15901778
申请日：2018-02-21
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shengwu Chang , Frank Sinclair , Alexandre Likhanskii , Christopher Campbell , Robert C. Lindberg , Eric D. Hermanson
IPC分类号： H01J37/05 , H01J37/317
摘要： Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

2. 发明授权

US10224181B2 Radio frequency extraction system for charge neutralized ion beam 有权
公开(公告)号：US10224181B2
公开(公告)日：2019-03-05
申请号：US15133261
申请日：2016-04-20
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Costel Biloiu , Piotr Lubicki , Tyler Rockwell , Christopher Campbell , Vikram Singh , Kevin M. Daniels , Richard J. Hertel , Peter F. Kurunczi , Alexandre Likhanskii
IPC分类号： H01J37/32
摘要： A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

3. 发明申请

US20190006149A1 APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND POINT OF USE CHEMISTRY 审中-公开
公开(公告)号：US20190006149A1
公开(公告)日：2019-01-03
申请号：US16123621
申请日：2018-09-06
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shurong Liang , Costel Biloiu , Glen Gilchrist , Vikram Singh , Christopher Campbell , Richard John Hertel , Alex Kontos
IPC分类号： H01J37/305 , C23F4/00 , H01J37/08 , H01J37/147
摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

4. 发明申请

US20170311430A1 APPARATUS AND TECHNIQUES TO TREAT SUBSTRATES USING DIRECTIONAL PLASMA AND REACTIVE GAS 审中-公开
公开(公告)号：US20170311430A1
公开(公告)日：2017-10-26
申请号：US15644062
申请日：2017-07-07
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shurong Liang , Costel Biloiu , Glen F.R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
IPC分类号： H05H1/24 , H01L21/66 , H01L21/308 , H01J37/32 , H01L21/3065
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

5. 发明授权

US09029811B1 Apparatus to control an ion beam 有权
标题翻译：用于控制离子束的装置
公开(公告)号：US09029811B1
公开(公告)日：2015-05-12
申请号：US14163844
申请日：2014-01-24
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kenneth H. Purser , Christopher Campbell , Frank Sinclair , Robert C. Lindberg , Joseph C. Olson
IPC分类号： H01J37/317 , H01J37/14 , H01J37/147
CPC分类号： H01J37/1475 , H01J37/317 , H01J37/3171 , H01J2237/30472
摘要： An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.
摘要翻译：控制离子束的装置包括扫描器，其配置成第一状态以扫描离子束，其中扫描器输出离子束作为发散离子束; 准直器，被配置为沿着准直器的一侧接收发散的离子束并且将发散的离子束作为准直的离子束输出; 光束调节部件，其靠近准直仪的一侧延伸; 以及控制器，其被配置为当所述扫描仪处于所述第一状态时向所述光束调节部件发送第一信号，以将所述发散离子束的离子轨迹从第一组轨迹调整到第二组轨迹。

6. 发明申请

US20150108362A1 APPARATUS TO CONTROL AN ION BEAM 有权
标题翻译：控制离子束的装置
公开(公告)号：US20150108362A1
公开(公告)日：2015-04-23
申请号：US14163844
申请日：2014-01-24
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kenneth H. Purser , Christopher Campbell , Frank Sinclair , Robert C. Lindberg , Joseph C. Olson
IPC分类号： H01J37/147
CPC分类号： H01J37/1475 , H01J37/317 , H01J37/3171 , H01J2237/30472
摘要： An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.
摘要翻译：控制离子束的装置包括扫描器，其配置成第一状态以扫描离子束，其中扫描器输出离子束作为发散离子束; 准直器，被配置为沿着准直器的一侧接收发散的离子束并且将发散的离子束作为准直的离子束输出; 光束调节部件，其靠近准直仪的一侧延伸; 以及控制器，其被配置为当所述扫描仪处于所述第一状态时向所述光束调节部件发送第一信号，以将所述发散离子束的离子轨迹从第一组轨迹调整到第二组轨迹。

7. 发明申请

US20150108361A1 DUAL STAGE SCANNER FOR ION BEAM CONTROL 有权
标题翻译：用于离子束控制的双级扫描仪
公开(公告)号：US20150108361A1
公开(公告)日：2015-04-23
申请号：US14163833
申请日：2014-01-24
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kenneth H. Purser , Christopher Campbell , Frank Sinclair , Robert C. Lindberg , Joseph C. Olson
IPC分类号： H01J37/147
CPC分类号： H01J37/1475 , H01J37/3171
摘要： An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point.
摘要翻译：离子束扫描器包括具有第一开口以传输离子束的第一扫描仪台，所述第一扫描仪台响应第一振荡偏转信号产生第一开口内的第一振荡偏转场; 第二扫描台，其设置在所述第一扫描台的下游，并具有用于透射所述离子束的第二开口，所述第二扫描仪台响应于第二振荡偏转信号，产生所述第二开口内的第二振荡偏转场，方向到第一振荡偏转场，以及扫描控制器，当扫描离子束离开定义公共焦点的第二阶段时，使第一振荡偏转信号和第二振荡偏转信号同步以产生多个离子轨迹。

8. 发明授权

US10714301B1 Conductive beam optics for reducing particles in ion implanter 有权
公开(公告)号：US10714301B1
公开(公告)日：2020-07-14
申请号：US15901775
申请日：2018-02-21
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shengwu Chang , Frank Sinclair , Alexandre Likhanskii , Christopher Campbell , Robert C. Lindberg
IPC分类号： H01J37/05 , H01J37/31 , H01J37/317
摘要： Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

9. 发明授权

US10128082B2 Apparatus and techniques to treat substrates using directional plasma and point of use chemistry 有权
公开(公告)号：US10128082B2
公开(公告)日：2018-11-13
申请号：US14808612
申请日：2015-07-24
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shurong Liang , Costel Biloiu , Glen Gilchrist , Vikram Singh , Christopher Campbell , Richard John Hertel , Alex Kontos
IPC分类号： H01J37/305 , H01J37/08 , H01J37/147 , C23F4/00
摘要： In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

10. 发明授权

US09706634B2 Apparatus and techniques to treat substrates using directional plasma and reactive gas 有权
公开(公告)号：US09706634B2
公开(公告)日：2017-07-11
申请号：US14970738
申请日：2015-12-16
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shurong Liang , Costel Biloiu , Glen F. R. Gilchrist , Vikram Singh , Christopher Campbell , Richard Hertel , Alexander Kontos , Piero Sferlazzo , Tsung-Liang Chen
IPC分类号： H01H1/24 , H05H1/24 , H01L21/3065 , H01L21/308 , H01L21/66
CPC分类号： H05H1/24 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32834 , H01J2237/327 , H01L21/3065 , H01L21/308 , H01L22/12 , H01L22/20
摘要： An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

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