专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20230020164A1 TECHNIQUES TO ENGINEER NANOSCALE PATTERNED FEATURES USING IONS 有权
公开(公告)号：US20230020164A1
公开(公告)日：2023-01-19
申请号：US17951758
申请日：2022-09-23
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , John Hautala , Adam Brand , Huixiong Dai
IPC分类号： H01L21/027 , H01L21/308 , H01L21/033 , H01L21/768
摘要： A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.

2. 发明授权

US10546730B2 Filling a cavity in a substrate using sputtering and deposition 有权
公开(公告)号：US10546730B2
公开(公告)日：2020-01-28
申请号：US15155282
申请日：2016-05-16
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , John Hautala
IPC分类号： H01L21/68 , H01J37/32 , C23C14/04 , H01J37/34 , C23C16/04 , C23C16/455 , C23C16/458 , C23C16/50 , C23C16/40 , H01L21/285 , H01L21/768
摘要： A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.

3. 发明申请

US20180330944A1 TECHNIQUES TO ENGINEER NANOSCALE PATTERNED FEATURES USING IONS 审中-公开
公开(公告)号：US20180330944A1
公开(公告)日：2018-11-15
申请号：US15978722
申请日：2018-05-14
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , John Hautala , Adam Brand , Huixiong Dai
IPC分类号： H01L21/027 , H01L21/033 , H01L21/308
CPC分类号： H01L21/0273 , H01L21/0337 , H01L21/3086
摘要： A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.

4. 发明授权

US09847228B2 Method for selectively depositing a layer on a three dimensional structure 有权
公开(公告)号：US09847228B2
公开(公告)日：2017-12-19
申请号：US15260442
申请日：2016-09-09
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Thomas R. Omstead , Anthony Renau
IPC分类号： H01L21/22 , H01L21/225 , H01L21/02 , C23C16/455 , C23C16/48 , C23C16/50 , C23C16/52 , H01J37/32 , H01L21/311 , H01L21/324 , H01L29/66
CPC分类号： H01L21/2253 , C23C16/45536 , C23C16/45551 , C23C16/486 , C23C16/50 , C23C16/52 , H01J37/32357 , H01L21/02057 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/0226 , H01L21/02274 , H01L21/0228 , H01L21/02636 , H01L21/2225 , H01L21/225 , H01L21/2252 , H01L21/31116 , H01L21/324 , H01L29/66803
摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

5. 发明申请

US20160379827A1 METHOD FOR SELECTIVELY DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE 有权
标题翻译：用于在三维结构上选择性沉积层的方法
公开(公告)号：US20160379827A1
公开(公告)日：2016-12-29
申请号：US15260442
申请日：2016-09-09
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Thomas R. Omstead , Anthony Renau
IPC分类号： H01L21/225 , H01L29/66 , H01L21/324
CPC分类号： H01L21/2253 , C23C16/45536 , C23C16/45551 , C23C16/486 , C23C16/50 , C23C16/52 , H01J37/32357 , H01L21/02057 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/0226 , H01L21/02274 , H01L21/0228 , H01L21/02636 , H01L21/2225 , H01L21/225 , H01L21/2252 , H01L21/31116 , H01L21/324 , H01L29/66803
摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
摘要翻译：方法可以包括提供具有限定衬底平面的表面和从衬底平面延伸的衬底特征的衬底; 将包括成角离子的离子束相对于垂直于衬底平面的非零角度引导到衬底，其中衬底特征的第一部分暴露于离子束，并且其中衬底特征的第二部分是不暴露于离子束; 将分子物质的分子引导到基底，其中分子种类的分子覆盖基底特征; 以及提供与分子物质反应的第二物质，其中包含分子种类和第二物质的层的选择性生长发生，使得在第一部分上生长的层的第一厚度不同于在第二部分。

6. 发明授权

US09082949B2 Magnetic memory and method of fabrication 有权
标题翻译：磁存储器和制造方法
公开(公告)号：US09082949B2
公开(公告)日：2015-07-14
申请号：US13872888
申请日：2013-04-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Alexander C. Kontos , Steven Sherman , John J. Hautala , Simon Ruffell
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L27/222 , H01L43/12
摘要： A method of forming a magnetic memory includes providing a layer stack comprising a plurality of magnetic layers and a plurality of electrically conducting layers on a base portion of a substrate; forming a first mask feature on an outer surface of the layer stack above a first protected region and a second mask feature on the outer surface of the layer stack above a second protected region, the first mask feature and second mask feature defining an exposed region of the layer stack in portions of the layer stack therebetween; and directing ions towards exposed the region of the layer stack in an ion exposure that is effective to magnetically isolate the first protected region from the second protected region and to electrically isolate the first protected region from the second protected region without removal of the exposed region of the layer stack.
摘要翻译：一种形成磁存储器的方法包括提供包括多个磁性层的层叠层和在基底的基底部分上的多个导电层; 在第一保护区域上方的层堆叠的外表面上形成第一掩模特征，并且在第二保护区域上方的层堆叠的外表面上形成第二掩模特征，第一掩模特征和第二掩模特征限定暴露区域所述层堆叠在所述层堆叠的部分中; 并且引导离子以离子曝光暴露于层堆叠的区域，所述离子曝光有效地将第一受保护区域与第二受保护区域磁性隔离，并且将第一受保护区域与第二受保护区域电隔离，而不去除暴露区域的暴露区域层叠。

7. 发明申请

US20150083581A1 TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING 有权
标题翻译：使用方向反应离子蚀刻处理基板的技术
公开(公告)号：US20150083581A1
公开(公告)日：2015-03-26
申请号：US14230649
申请日：2014-03-31
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Steven R. Sherman , Simon Ruffell , John Hautala , Adam Brand
IPC分类号： C23F4/02
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32422 , H01L29/66803
摘要： A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate surface in a presence of a reactive ambient containing a reactive species where the substrate includes a surface feature. At least one surface of the surface feature is etched using the ions in combination with the reactive ambient at a first etch rate that is greater than a second etch rate when the ions are directed to the substrate without the reactive ambient and greater than a third etch rate when the reactive ambient is provided to the substrate without the ions.
摘要翻译：处理衬底的方法包括在存在包含反应性物质的反应性环境（其中衬底包括表面特征）的情况下，将离子相对于衬底表面垂直于至少一个非零角度引导到衬底。使用离子与反应性环境组合蚀刻表面特征的至少一个表面，当第一蚀刻速率大于第二蚀刻速率时，当离子被引导到衬底而没有反应性环境时，大于第三蚀刻当没有离子而将反应性环境提供给衬底时的速率。

8. 发明授权

US11488823B2 Techniques to engineer nanoscale patterned features using ions 有权
公开(公告)号：US11488823B2
公开(公告)日：2022-11-01
申请号：US17170351
申请日：2021-02-08
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , John Hautala , Adam Brand , Huixiong Dai
IPC分类号： H01L21/02 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/768
摘要： A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.

9. 发明申请

US20210375626A1 TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS 有权
公开(公告)号：US20210375626A1
公开(公告)日：2021-12-02
申请号：US17404438
申请日：2021-08-17
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kevin R. Anglin , Simon Ruffell
IPC分类号： H01L21/033 , H01L21/67 , H01J37/32 , H01L21/311
摘要： A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.

10. 发明申请

US20190355581A1 TECHNIQUES AND APPARATUS FOR ELONGATION PATTERNING USING ANGLED ION BEAMS 审中-公开
公开(公告)号：US20190355581A1
公开(公告)日：2019-11-21
申请号：US16053329
申请日：2018-08-02
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Kevin R. Anglin , Simon Ruffell
IPC分类号： H01L21/033 , H01L21/311 , H01L21/67 , H01J37/32
摘要： A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式