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1. 发明申请

US20210313154A1 System And Methods Using An Inline Surface Engineering Source 有权
公开(公告)号：US20210313154A1
公开(公告)日：2021-10-07
申请号：US17347048
申请日：2021-06-14
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Christopher Hatem , Peter F. Kurunczi , Christopher A. Rowland , Joseph C. Olson , Anthony Renau
IPC分类号： H01J37/32 , H01L21/67 , H01J37/36
摘要： A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

2. 发明授权

US10545408B2 Performance improvement of EUV photoresist by ion implantation 有权
公开(公告)号：US10545408B2
公开(公告)日：2020-01-28
申请号：US15786806
申请日：2017-10-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Tristan Y. Ma , Huixiong Dai , Anthony Renau , John Hautala , Joseph Olson
IPC分类号： G03F7/38 , G03F7/20
摘要： A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

3. 发明申请

US20180082824A1 Extreme Edge Uniformity Control 审中-公开
公开(公告)号：US20180082824A1
公开(公告)日：2018-03-22
申请号：US15269026
申请日：2016-09-19
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Alexandre Likhanskii , Maureen Petterson , John Hautala , Anthony Renau , Christopher A. Rowland , Costel Biloiu
IPC分类号： H01J37/32
CPC分类号： H01J37/32651 , H01J37/3211 , H01J37/32642 , H01J37/32715 , H01J37/32935 , H01J2237/332 , H01J2237/334 , H01J2237/3365
摘要： A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.

4. 发明授权

US09847228B2 Method for selectively depositing a layer on a three dimensional structure 有权
公开(公告)号：US09847228B2
公开(公告)日：2017-12-19
申请号：US15260442
申请日：2016-09-09
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Thomas R. Omstead , Anthony Renau
IPC分类号： H01L21/22 , H01L21/225 , H01L21/02 , C23C16/455 , C23C16/48 , C23C16/50 , C23C16/52 , H01J37/32 , H01L21/311 , H01L21/324 , H01L29/66
CPC分类号： H01L21/2253 , C23C16/45536 , C23C16/45551 , C23C16/486 , C23C16/50 , C23C16/52 , H01J37/32357 , H01L21/02057 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/0226 , H01L21/02274 , H01L21/0228 , H01L21/02636 , H01L21/2225 , H01L21/225 , H01L21/2252 , H01L21/31116 , H01L21/324 , H01L29/66803
摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

5. 发明申请

US20160379827A1 METHOD FOR SELECTIVELY DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE 有权
标题翻译：用于在三维结构上选择性沉积层的方法
公开(公告)号：US20160379827A1
公开(公告)日：2016-12-29
申请号：US15260442
申请日：2016-09-09
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Thomas R. Omstead , Anthony Renau
IPC分类号： H01L21/225 , H01L29/66 , H01L21/324
CPC分类号： H01L21/2253 , C23C16/45536 , C23C16/45551 , C23C16/486 , C23C16/50 , C23C16/52 , H01J37/32357 , H01L21/02057 , H01L21/02112 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/0226 , H01L21/02274 , H01L21/0228 , H01L21/02636 , H01L21/2225 , H01L21/225 , H01L21/2252 , H01L21/31116 , H01L21/324 , H01L29/66803
摘要： A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
摘要翻译：方法可以包括提供具有限定衬底平面的表面和从衬底平面延伸的衬底特征的衬底; 将包括成角离子的离子束相对于垂直于衬底平面的非零角度引导到衬底，其中衬底特征的第一部分暴露于离子束，并且其中衬底特征的第二部分是不暴露于离子束; 将分子物质的分子引导到基底，其中分子种类的分子覆盖基底特征; 以及提供与分子物质反应的第二物质，其中包含分子种类和第二物质的层的选择性生长发生，使得在第一部分上生长的层的第一厚度不同于在第二部分。

6. 发明申请

US20140097752A1 Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield 审中-公开
标题翻译：具有掺杂材料屏蔽的电感耦合等离子体离子源室
公开(公告)号：US20140097752A1
公开(公告)日：2014-04-10
申请号：US13647540
申请日：2012-10-09
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人： Costel Biloui , Timonthy J. Miller , Bon-Woong Koo , Anthony Renau
IPC分类号： H01J27/16
CPC分类号： H01J37/32119 , H01J27/16 , H01J37/32477 , H01J37/32651 , H01J49/105 , H01J2237/0815
摘要： A plasma ion source including a plasma chamber, gas inlets, an RF antenna, an RF window, an extraction plate, a window shield, and a chamber liner. The RF window may be positioned intermediate the RF antenna and the plasma chamber. The window shield may be disposed intermediate the RF widow and the interior of the plasma chamber and the chamber liner may cover the interior surface of the plasma chamber. During operation of the ion source, the window shield sustains ionic bombardment that would otherwise be sustained by the RF window. Fewer impurity ions are therefore released into the plasma chamber. Simultaneously, additional dopant atoms are released from the window shield into the plasma chamber. Ionic bombardment is also sustained by the chamber liner, which also contributes a quantity of dopant atoms to the plasma chamber. Dopant ion production within the plasma chamber is thereby increased while impurities are minimized.
摘要翻译：一种等离子体离子源，包括等离子体室，气体入口，RF天线，RF窗，提取板，窗户屏蔽和室衬垫。 RF窗口可以位于RF天线和等离子体室之间。窗口屏蔽件可以设置在RF寡围和等离子体室的内部之间，并且腔室衬套可以覆盖等离子体室的内表面。在离子源操作期间，窗口屏蔽件维持否则由RF窗口维持的离子轰击。因此，较少的杂质离子被释放到等离子体室中。同时，另外的掺杂剂原子从窗口屏蔽释放到等离子体室中。离子轰击也由腔室衬垫维持，这也有助于等离子体室的掺杂剂原子的量。因此，等离子体室内的掺杂离子产生增加，同时使杂质最小化。

7. 发明授权

US10990014B2 Performance improvement of EUV photoresist by ion implantation 有权
公开(公告)号：US10990014B2
公开(公告)日：2021-04-27
申请号：US16691739
申请日：2019-11-22
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Tristan Y. Ma , Huixiong Dai , Anthony Renau , John Hautala , Joseph Olson
IPC分类号： G03F7/38 , G03F7/20 , G03F7/16 , G03F7/004 , G03F7/09
摘要： A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

8. 发明授权

US10886279B2 Device structure for forming semiconductor device having angled contacts 有权
公开(公告)号：US10886279B2
公开(公告)日：2021-01-05
申请号：US16875431
申请日：2020-05-15
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Sony Varghese , Anthony Renau , Morgan Evans , John Hautala , Joe Olson
IPC分类号： H01L27/108
摘要： A memory device may include an active device region, disposed at least partially in a first level. The memory device may include a storage capacitor, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane. The memory device may also include a contact via, the contact via extending between the storage capacitor and the active device region, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.

9. 发明申请

US20190056914A1 PERFORMANCE IMPROVEMENT OF EUV PHOTORESIST BY ION IMPLANTATION 审中-公开
公开(公告)号：US20190056914A1
公开(公告)日：2019-02-21
申请号：US15786806
申请日：2017-10-18
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Tristan Y. Ma , Huixiong Dai , Anthony Renau , John Hautala , Joseph Olson
IPC分类号： G06F7/38 , G03F7/20
摘要： A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.

10. 发明授权

US09773636B2 Apparatus and method for generating high current negative hydrogen ion beam 有权
公开(公告)号：US09773636B2
公开(公告)日：2017-09-26
申请号：US14831468
申请日：2015-08-20
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： W. Davis Lee , Neil Bassom , Anthony Renau
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J27/028 , H01J27/205 , H01J27/24 , H01J37/3171 , H01J2237/0815 , H01J2237/082 , H01J2237/31701
摘要： An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive H2 gas; a light source directing radiation into the ion source chamber to generate excited H2 molecules having an excited vibrational state from at least some of the H2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein H− ions are generated from at least some of the excited H2 molecules; and an extraction assembly arranged to extract the H− ions from the ion source chamber.

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