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1. 发明授权

US08897617B2 Digital image capturing apparatus and method of controlling the same 有权
标题翻译：数字图像捕获装置及其控制方法
公开(公告)号：US08897617B2
公开(公告)日：2014-11-25
申请号：US13295467
申请日：2011-11-14
申请人： Wan-je Park , Sang-jin Park , Jung-ah Seung , Ju-yeon You , Hye-jin Kim
发明人： Wan-je Park , Sang-jin Park , Jung-ah Seung , Ju-yeon You , Hye-jin Kim
IPC分类号： H04N9/80 , H04N21/433 , H04N21/432 , H04N9/82 , H04N5/45 , H04N21/81 , H04N21/845 , H04N5/93 , H04N21/4223 , H04N5/445
CPC分类号： H04N21/4223 , H04N5/45 , H04N5/9305 , H04N9/8227 , H04N21/4325 , H04N21/4334 , H04N21/8153 , H04N21/8455 , H04N2005/44517
摘要： A digital image capturing apparatus for displaying on a first display image that indicates a progress of video recording or reproduction, a second display image corresponding to a captured still image, and a method of controlling the same. A time point when a still image is captured may be indicated and thus a user may easily check a video recording or reproduction history.
摘要翻译：一种用于在指示视频记录或再现的进展的第一显示图像上显示的数字图像捕获装置，与所捕获的静止图像相对应的第二显示图像及其控制方法。拍摄静止图像的时间点可以被指示，因此用户可以容易地检查视频记录或再现历史。

2. 发明申请

US20120177338A1 DIGITAL IMAGE CAPTURING APPARATUS AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：数字图像捕获装置及其控制方法
公开(公告)号：US20120177338A1
公开(公告)日：2012-07-12
申请号：US13295467
申请日：2011-11-14
申请人： Wan-je Park , Sang-jin Park , Jung-ah Seung , Ju-yeon You , Hye-jin Kim
发明人： Wan-je Park , Sang-jin Park , Jung-ah Seung , Ju-yeon You , Hye-jin Kim
IPC分类号： H04N5/77 , H04N5/775
CPC分类号： H04N21/4223 , H04N5/45 , H04N5/9305 , H04N9/8227 , H04N21/4325 , H04N21/4334 , H04N21/8153 , H04N21/8455 , H04N2005/44517
摘要： A digital image capturing apparatus for displaying on a first display image that indicates a progress of video recording or reproduction, a second display image corresponding to a captured still image, and a method of controlling the same. A time point when a still image is captured may be indicated and thus a user may easily check a video recording or reproduction history.
摘要翻译：一种用于在指示视频记录或再现的进度的第一显示图像上显示的数字图像捕获装置，与所捕获的静止图像相对应的第二显示图像及其控制方法。拍摄静止图像的时间点可以被指示，因此用户可以容易地检查视频记录或再现历史。

3. 发明授权

US09092231B2 Terminal device and image forming apparatus to solve printing error and method of solving printing error thereof 有权
标题翻译：用于解决打印错误的终端装置和图像形成装置以及其打印错误的解决方法
公开(公告)号：US09092231B2
公开(公告)日：2015-07-28
申请号：US12198430
申请日：2008-08-26
申请人： Sang-jin Park
发明人： Sang-jin Park
IPC分类号： G06F15/00 , G06K1/00 , G06F3/12 , G06F9/44
CPC分类号： G06F9/441 , G06F3/1206 , G06F3/121 , G06F3/1225 , G06F3/1234 , G06F3/1279 , G06F3/1284 , G06F9/4411
摘要： A terminal device includes an inbox driver unit to provide information of one or more printer drivers, and a controller to select from the inbox driver unit one of the one or more printer drivers that responds to an error, which occurs in an image forming apparatus due to the printer driver, based on information of a printer driver supportable by the image forming apparatus.
摘要翻译：终端设备包括：收件箱驱动器单元，用于提供一个或多个打印机驱动程序的信息;以及控制器，用于从收件箱驱动单元中选择一个或多个打印机驱动程序中的一个或多个打印机驱动程序，该打印机驱动程序响应错误，基于由图像形成装置支持的打印机驱动程序的信息，向打印机驱动程序发送。

4. 发明授权

US08320186B2 Method of operating nonvolatile memory device 有权
标题翻译：操作非易失性存储器件的方法
公开(公告)号：US08320186B2
公开(公告)日：2012-11-27
申请号：US13064265
申请日：2011-03-15
申请人： Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
发明人： Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
IPC分类号： G11C11/34
CPC分类号： G11C16/349
摘要： Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.
摘要翻译：提供了一种操作非易失性存储器件以执行编程操作或擦除操作的方法。该方法包括将包括直流（DC）脉冲和AC扰动脉冲的复合脉冲施加到非易失性存储器件以执行编程操作或擦除操作。

5. 发明授权

US08043952B2 Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same 有权
标题翻译：形成氧化铝层的方法和使用其制造电荷陷阱存储器件的方法
公开(公告)号：US08043952B2
公开(公告)日：2011-10-25
申请号：US12153655
申请日：2008-05-22
申请人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
发明人： Sang-moo Choi , Kwang-soo Seol , Woong-chul Shin , Sang-jin Park , Eun-ha Lee , Jung-hun Sung
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/8242 , H01L29/788
CPC分类号： H01L21/28282 , H01L21/02178 , H01L21/02263 , H01L21/02356 , H01L21/02362 , H01L21/31604 , H01L21/3162
摘要： Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
摘要翻译：提供一种形成氧化铝层的方法以及使用其形成电荷阱存储器件的方法。形成氧化铝层的方法可以包括在下层上形成非晶态氧化铝层，在非晶态氧化铝层上形成结晶性辅助层，并使无定形氧化铝层结晶。形成结晶辅助层可以包括在无定形氧化铝层上形成非晶态辅助层; 并使无定形辅助层结晶。

6. 发明申请

US20110164457A1 Method of operating nonvolatile memory device 有权
公开(公告)号：US20110164457A1
公开(公告)日：2011-07-07
申请号：US13064265
申请日：2011-03-15
申请人： Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
发明人： Kwang-soo Seol , Sang-jin Park , Sung-hoon Lee , Sung-il Park , Jong-seob Kim
IPC分类号： G11C16/04
CPC分类号： G11C16/349
摘要： Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.

7. 发明授权

US07907452B2 Non-volatile memory cell programming method 有权
标题翻译：非易失性存储单元编程方法
公开(公告)号：US07907452B2
公开(公告)日：2011-03-15
申请号：US12081569
申请日：2008-04-17
申请人： Sang-jin Park , Kwang-soo Seol
发明人： Sang-jin Park , Kwang-soo Seol
IPC分类号： G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12
CPC分类号： G11C16/10
摘要： A non-volatile memory cell programming method of programming 2-bit data in a memory cell having 4 threshold voltage distributions may include a first program operation of programming a first bit of the 2-bit data in the memory cell by applying a first programming voltage to the memory cell; a second program operation of programming a second bit of the 2-bit data in the memory cell by applying a second programming voltage to the memory cell; and a stabilization operation of applying a stabilization voltage having an electric field opposite in polarity to an electric field formed by the first and second programming voltages to the memory cell after one of the first and second program operations that corresponds to a higher one of the first and second programming voltages is performed.
摘要翻译：在具有4个阈值电压分布的存储单元中编程2位数据的非易失性存储单元编程方法可以包括通过施加第一编程电压来对存储单元中的2位数据的第一位进行编程的第一编程操作到记忆体; 第二编程操作，通过向存储单元施加第二编程电压来对存储器单元中的2位数据的第二位进行编程; 以及在第一和第二编程操作中的一个对应于第一和第二编程电压中较高的一个的第一和第二编程操作之一之后，将具有与第一和第二编程电压形成的电场的极性相反的电场的稳定电压施加到存储单元的稳定操作并执行第二编程电压。

8. 发明授权

US07732855B2 Semiconductor memory device including recessed control gate electrode 失效
标题翻译：半导体存储器件包括凹入控制栅电极
公开(公告)号：US07732855B2
公开(公告)日：2010-06-08
申请号：US11808982
申请日：2007-06-14
申请人： Sang-jin Park , Kwang-soo Seol , Yoon-dong Park , Sang-min Shin , In-jun Hwang , Sang-moo Choi , Ju-hee Park
发明人： Sang-jin Park , Kwang-soo Seol , Yoon-dong Park , Sang-min Shin , In-jun Hwang , Sang-moo Choi , Ju-hee Park
IPC分类号： H01L21/28
CPC分类号： H01L29/42324 , G11C16/0408 , H01L21/28273 , H01L21/28282 , H01L29/42336 , H01L29/4234 , H01L29/42352 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： A semiconductor memory device may include a semiconductor substrate, at least one control gate electrode, at least one storage node layer, at least one tunneling insulating layer, at least one blocking insulating layer, and/or first and second channel regions. The at least one control gate electrode may be recessed into the semiconductor substrate. The at least one storage node layer may be between a sidewall of the at least one control gate electrode and the semiconductor substrate. The at least one tunneling insulating layer may be between the at least one storage node layer and the at least one control gate electrode. The at least one blocking insulating layer may be between the storage node layer and the control gate electrode. The first and second channel regions may be between the at least one tunneling insulating layer and the semiconductor substrate to surround at least a portion of the sidewall of the control gate electrode and/or may be separated from each other.
摘要翻译：半导体存储器件可以包括半导体衬底，至少一个控制栅电极，至少一个存储节点层，至少一个隧道绝缘层，至少一个阻挡绝缘层和/或第一和第二沟道区。至少一个控制栅电极可以凹进到半导体衬底中。所述至少一个存储节点层可以在所述至少一个控制栅电极的侧壁和所述半导体衬底之间。所述至少一个隧道绝缘层可以在所述至少一个存储节点层和所述至少一个控制栅电极之间。所述至少一个阻挡绝缘层可以在所述存储节点层和所述控制栅电极之间。第一和第二沟道区可以在至少一个隧道绝缘层和半导体衬底之间，以围绕控制栅电极的侧壁的至少一部分和/或可以彼此分离。

9. 发明申请

US20080018593A1 IMAGE FORMING CONTROL APPARATUS AND CONTROL METHOD THEREOF 审中-公开
标题翻译：图像形成控制装置及其控制方法
公开(公告)号：US20080018593A1
公开(公告)日：2008-01-24
申请号：US11780565
申请日：2007-07-20
申请人： Sang-jin Park , Jun-young Choi
发明人： Sang-jin Park , Jun-young Choi
IPC分类号： G09G5/00
CPC分类号： G06F3/1247 , G06F3/1204 , G06F3/1205 , G06F3/1258 , G06F3/1284 , G06F3/1285
摘要： An image forming control apparatus includes a display unit, a user input unit that allows a user to move a pointer on a picture displayed on the display unit, a printer driver that includes a setup information storing unit in which setup information for a plurality of setup items related to image formation is stored, and drives an image forming apparatus based on the setup information, and a controller to control a setup information initial picture having a plurality of individual selection areas for the plurality of setup items to be displayed on the display unit, and causes details of the setup information for a relevant setup item to be displayed in a pop-up picture of a predetermined format on the display unit if the user places the pointer on one of the plurality of individual selection areas through the user input unit.
摘要翻译：一种图像形成控制装置，包括显示单元，用户输入单元，其允许用户将显示单元上显示的图像上的指针移动;打印机驱动器，其包括设置信息存储单元，其中设置多个设置信息存储与图像形成相关的项目，并且基于设置信息驱动图像形成装置，以及控制器，用于控制要在显示单元上显示的多个设置项目具有多个单独选择区域的设置信息初始图像并且如果用户通过用户输入单元将指针放置在多个单独选择区域中的一个上，则将相关设置项目的设置信息的细节显示在显示单元上的预定格式的弹出图片中。

10. 发明申请

US20080009080A1 Method of manufacturing a multi-purpose magnetic film structure 有权
标题翻译：制造多用途磁性膜结构的方法
公开(公告)号：US20080009080A1
公开(公告)日：2008-01-10
申请号：US11898762
申请日：2007-09-14
申请人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
发明人： Tae-wan Kim , Wan-jun Park , Sang-jin Park , In-jun Hwang , Soon-ju Kwon , Young-keun Kim , Richard Gambino
IPC分类号： H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.
摘要翻译：提供了使用自旋电荷的多用途磁性膜结构，其制造方法，具有该自旋电荷的半导体器件，以及操作半导体存储器件的方法。多用途磁性膜结构包括下部磁性膜，形成在下部磁性膜上的隧道膜和形成在隧道膜上的上部磁性膜，其中下部和上部磁性膜是形成其间电化学电位差的铁磁性膜当上下磁性膜具有相反的磁化方向时。

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