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    • 4. 发明申请
    • Phase shifter circuit with proper broadband performance
    • 具有适当宽带性能的移相器电路
    • US20080012660A1
    • 2008-01-17
    • US11606989
    • 2006-12-01
    • Yasuhiro NakashaTatsuya Hirose
    • Yasuhiro NakashaTatsuya Hirose
    • H03H7/18
    • H03H7/21H03H7/185H03H7/19H03H2007/0192
    • A phase shifter circuit includes a plurality of first series circuits each comprised of a series connection of one capacitor and one resistor, a first circuit element including at least inductance connecting between a first end and a second end of a chain structure made by connecting the plurality of first series circuits in series, the first circuit element and the chain structure together constituting a first loop circuit, a plurality of second series circuits each comprised of a series connection of one capacitor and one resistor, a second circuit element including at least inductance connecting between a first end and a second end of a chain structure made by connecting the plurality of second series circuits in series, the second circuit element and the chain structure together constituting a second loop circuit, and a plurality of connection lines connecting between the first loop circuit and the second loop circuit.
    • 一种移相器电路包括多个第一串联电路,每个第一串联电路由一个电容器和一个电阻器的串联连接构成,第一电路元件至少包括电感,该电感连接在链结构的第一端和第二端之间, 串联的第一串联电路,第一电路元件和链结构一起构成第一环路电路,多个第二串联电路,每个第二串联电路由一个电容器和一个电阻器的串联连接构成,第二电路元件至少包括电感连接 在通过串联连接多个第二串联电路而制成的链结构的第一端和第二端之间,第二电路元件和链结构一起构成第二环路电路,以及多个连接线,其连接在第一环路 电路和第二回路电路。
    • 5. 发明申请
    • Sample -hold circuit
    • 采样电路
    • US20060114033A1
    • 2006-06-01
    • US11076924
    • 2005-03-11
    • Yasuhiro NakashaTatsuya Hirose
    • Yasuhiro NakashaTatsuya Hirose
    • G11C27/02
    • G11C27/028G11C27/02
    • A sample-hold circuit, which reduces droop and feed through and is suitable for high-speed operation while maintaining a wider freedom of design parameters, comprising a preamplifier to which an input analog signal is applied, a core section which outputs a voltage corresponding to the variation of an output from the preamplifier during the sampling period and holds the voltage corresponding to the output from the preamplifier during the hold period initiated by a transition of a clock signal, and a current switching circuit which is connected to the output pin of the preamplifier and enables the current flowing into the first transistor within the preamplifier during the sampling period to flow into another second transistor to apply a constant potential as an input to the core section.
    • 采样保持电路,其减小下垂并馈通,并且适用于高速操作,同时保持更宽的设计参数自由度,包括施加输入模拟信号的前置放大器,输出对应于 在采样周期期间来自前置放大器的输出的变化,并且在由时钟信号的转变启动的保持时段期间保持与来自前置放大器的输出相对应的电压,以及连接到时钟信号的输出引脚的电流切换电路 并且使得在采样周期期间流入前置放大器内的第一晶体管的电流流入另一个第二晶体管,以将恒定电位作为输入提供给核心部分。
    • 6. 发明授权
    • Resonance tunnel diode memory
    • 共振隧道二极管存储器
    • US5390145A
    • 1995-02-14
    • US166108
    • 1993-12-14
    • Yasuhiro NakashaYuu Watanabe
    • Yasuhiro NakashaYuu Watanabe
    • G11C5/14G11C11/38G11C13/00
    • G11C5/142G11C11/38G11C2211/5614
    • A semiconductor memory device including a plurality of bit lines and a plurality of word lines which intersect to form a matrix of cross points. A respective memory cell is disposed at each cross point and corresponds to the respective word line and respective bit line intersecting at the respective cross point. Each memory cell includes a transfer gate having a first current terminal connected to the corresponding bit line and a control terminal connected to the corresponding word line. Each memory cell also includes a pair of serially connected negative differential resistance memory elements having an interconnection node therebetween. The interconnection node is connected to the second current terminal of the transfer gate. A characteristic controlling circuit is coupled to the plurality of bit lines and controls the voltage of each bit line based on whether a respective memory cell corresponding to the respective bit line is selected or not selected, the characteristic controlling circuit including a plurality of negative differential resistance elements respectively corresponding to the plurality of bit lines.
    • 一种半导体存储器件,包括多个位线和相交以形成交叉点矩阵的多个字线。 相应的存储单元设置在每个交叉点处,并且对应于相应字线和在相应交叉点相交的相应位线。 每个存储单元包括具有连接到对应位线的第一电流端子和连接到对应字线的控制端子的传输门。 每个存储单元还包括一对串联连接的负差动电阻存储元件,其间具有互连节点。 互连节点连接到传输门的第二电流端子。 特征控制电路耦合到多个位线,并且基于是否选择对应于相应位线的相应存储单元来控制每个位线的电压,该特性控制电路包括多个负差分电阻 分别对应于多个位线的元件。
    • 7. 发明授权
    • Transmission device
    • 传输设备
    • US08437423B2
    • 2013-05-07
    • US12577289
    • 2009-10-12
    • Yasuhiro Nakasha
    • Yasuhiro Nakasha
    • H04L27/00
    • H04L25/4902H03K5/06H04L27/02
    • A transmission device including a pulse generating section configured to generate a plurality of pulses using a signal of data and a signal obtained by delaying the signal of data, and to adjust the pulse width such that each of the plurality of pulses has a pulse width conforming to a sequence of the data; a band-pass filter filtering the plurality of pulses; and a transmission amplifier amplifying the filtered plurality of pulses and outputting the filtered plurality of pulses as a transmission signal.
    • 一种发送装置,包括:脉冲发生部,被配置为使用数据的信号和通过延迟数据的信号而获得的信号产生多个脉冲,并且调整脉冲宽度,使得所述多个脉冲中的每一个具有符合脉冲宽度 到数据的序列; 滤波多个脉冲的带通滤波器; 以及发送放大器,放大经过滤波的多个脉冲,并将滤波的多个脉冲作为发送信号输出。