会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Low power and high density source driver and current driven active matrix organic electroluminescent device having the same
    • 具有相同功能的低功率和高密度源极驱动器和电流驱动的有源矩阵有机电致发光器件
    • US07391393B2
    • 2008-06-24
    • US10739735
    • 2003-12-17
    • Yil-Suk YangByung-Doo KimJong-Dae KimTae-Moon RohDae-Woo LeeByoung-Gon YuIl-Yong ParkSung-ku Kwon
    • Yil-Suk YangByung-Doo KimJong-Dae KimTae-Moon RohDae-Woo LeeByoung-Gon YuIl-Yong ParkSung-ku Kwon
    • G09G3/30
    • G09G3/3283G09G3/3241G09G2310/027G09G2330/021
    • Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel. The source driver includes: a shift register for generating an enable signal for storing data; a data latch circuit for storing digital data inputted from an exterior; a line latch circuit for sequentially storing the data in response to the enable signal and outputting the stored data in parallel at one time in response to a load signal; a current type digital-to-analog converter for converting the digital data outputted from the line latch circuit into an analog signal, the analog signal being outputted in a form of a current signal; and a high voltage shield circuit for transferring the output of the current digital-to-analog converter to source lines of an external panel and for shielding internal circuits from a high voltage of the panel. The shift register, the data latch circuit, the line latch circuit, the current type digital-to-analog converter and the high voltage shield circuit are driven at a normal voltage.
    • 公开了一种低功率和高密度源极驱动器以及具有这种驱动器的电流驱动有源矩阵有机电致发光器件,其中所有元件都工作在正常电压,并且源极驱动器的所有电路都屏蔽了面板的高电压。 源极驱动器包括:移位寄存器,用于产生用于存储数据的使能信号; 数据锁存电路,用于存储从外部输入的数字数据; 行锁存电路,用于响应于使能信号顺序地存储数据并响应于负载信号一次并行地输出存储的数据; 用于将从线路锁存电路输出的数字数据转换为模拟信号的电流型数模转换器,模拟信号以电流信号的形式输出; 以及用于将当前数模转换器的输出传送到外部面板的源极线并用于屏蔽内部电路与面板的高电压的高压屏蔽电路。 移位寄存器,数据锁存电路,线路锁存电路,电流型数模转换器和高压屏蔽电路以正常电压驱动。
    • 2. 发明申请
    • Low power and high density source driver and current driven active matrix organic electroluminescent device having the same
    • 具有相同功能的低功率和高密度源极驱动器和电流驱动的有源矩阵有机电致发光器件
    • US20050007315A1
    • 2005-01-13
    • US10739735
    • 2003-12-17
    • Yil-Suk YangByung-Doo KimJong-Dae KimTae-Moon RohDae-Woo LeeByoung-Gon YuIl-Yong ParkSung-Ku Kwon
    • Yil-Suk YangByung-Doo KimJong-Dae KimTae-Moon RohDae-Woo LeeByoung-Gon YuIl-Yong ParkSung-Ku Kwon
    • G09G3/30G09G3/32
    • G09G3/3283G09G3/3241G09G2310/027G09G2330/021
    • Disclosed is a low power and high density source driver and a current driven active matrix organic electroluminescent device having the same, in which all elements operate at a normal voltage and all circuits of the source driver are shielded from a high voltage of a panel. The source driver includes: a shift register for generating an enable signal for storing data; a data latch circuit for storing digital data inputted from an exterior; a line latch circuit for sequentially storing the data in response to the enable signal and outputting the stored data in parallel at one time in response to a load signal; a current type digital-to-analog converter for converting the digital data outputted from the line latch circuit into an analog signal, the analog signal being outputted in a form of a current signal; and a high voltage shield circuit for transferring the output of the current digital-to-analog converter to source lines of an external panel and for shielding internal circuits from a high voltage of the panel. The shift register, the data latch circuit, the line latch circuit, the current type digital-to-analog converter and the high voltage shield circuit are driven at a normal voltage.
    • 公开了一种低功率和高密度源极驱动器以及具有这种驱动器的电流驱动有源矩阵有机电致发光器件,其中所有元件都工作在正常电压,并且源极驱动器的所有电路都屏蔽了面板的高电压。 源极驱动器包括:移位寄存器,用于产生用于存储数据的使能信号; 数据锁存电路,用于存储从外部输入的数字数据; 行锁存电路,用于响应于使能信号顺序地存储数据并响应于负载信号一次并行地输出存储的数据; 用于将从线路锁存电路输出的数字数据转换为模拟信号的电流型数模转换器,模拟信号以电流信号的形式输出; 以及用于将当前数模转换器的输出传送到外部面板的源极线并用于屏蔽内部电路与面板的高电压的高压屏蔽电路。 移位寄存器,数据锁存电路,线路锁存电路,电流型数模转换器和高压屏蔽电路以正常电压驱动。
    • 3. 发明授权
    • Method for fabricating power semiconductor device having trench gate structure
    • US06852597B2
    • 2005-02-08
    • US10071127
    • 2002-02-08
    • Il-Yong ParkJong Dae KimSang Gi KimJin Gun KooDae Woo LeeRoh Tae MoonYang Yil Suk
    • Il-Yong ParkJong Dae KimSang Gi KimJin Gun KooDae Woo LeeRoh Tae MoonYang Yil Suk
    • H01L21/336H01L29/417H01L29/78
    • H01L29/7813H01L29/41766H01L29/41775H01L29/7802
    • A method for fabricating a power semiconductor device having a trench gate structure is provided. An epitaxial layer of a first conductivity type having a low concentration and a body region of a second conductivity type are sequentially formed on a semiconductor substrate of the first conductivity type having a high concentration. An oxide layer pattern is formed on the body region. A first trench is formed using the oxide layer pattern as an etching mask to perforate a predetermined portion of the body region having a first thickness. A body contact region of the second conductivity type having a high concentration is formed to surround the first trench by impurity ion implantation using the oxide layer pattern as an ion implantation mask. First spacer layers are formed to cover the sidewalls of the first trench and the sidewalls of the oxide layer pattern. A second trench is formed using the oxide layer pattern and the first spacer layers as etching masks to perforate a predetermined portion of the body region having a second thickness greater than the first thickness. A source region of the first conductivity type having a high concentration is formed to surround the second trench by impurity ion implantation using the oxide layer pattern and the first spacer layers as ion implantation masks. Second spacer layers are formed to cover the sidewalls of the second trench and the sidewalls of the first spacer layers. A third trench is formed to a predetermined depth of the epitaxial layer using the oxide layer pattern, the first spacer layers, and the second spacer layers as etching masks. A gate insulating layer is formed in the third trench. A gate conductive pattern is formed in the gate insulating layer. An oxide layer is formed on the gate conductive layer pattern. The first and second spacer layers are removed. A first metal electrode layer is formed to be electrically connected to the source region and the body contact region. A second metal electrode layer is formed to be electrically connected to the gate conductive layer pattern. A third metal electrode layer is formed to be electrically connected to the semiconductor substrate.
    • 6. 发明申请
    • Eyelash curler
    • 睫毛夹
    • US20050061347A1
    • 2005-03-24
    • US10807059
    • 2004-03-23
    • Il-Yong Park
    • Il-Yong Park
    • A45D2/48
    • A45D2/48
    • An eyelash curler is composed of an eyelash curler main body, which includes an upper body part; a lower body part having a curved forming space at a front section thereof, to allow eyelashes of the user to be positioned therein, the lower body part constituting a handle grip body together with the upper body part; an immobilizing member provided at a front end of the lower body part and curved to correspond to curvature of an eyelash line shape of a user; a forming member coupled to the immobilizing member and made of a metal sheet having the same curvature as that of the immobilizing member; and a pressing member disposed between the upper and lower body parts, which includes a pressing plate, which is rotatably supported to the curler main body by a pin formed on a rear end thereof, and which is biased by an elastic element; a pressing part integrally connected to a front end of the pressing plate through a boundary part; and an elastically pressing part coupled to a front end of the pressing part. Such an eyelash curler can provide an advantageous effect of the simple push-button structure made of plastic and also a good curling performance of the metal sheet.
    • 一种睫毛夹卷发器由睫毛夹本体构成,其包括上身部; 下体部,其前部具有弯曲的形成空间,以允许使用者的睫毛定位在其中,下主体部分与上身部分一起构成手柄把手; 固定构件,其设置在所述下身部的前端,并且弯曲以对应于使用者的睫毛线形状的曲率; 耦合到所述固定构件并由具有与所述固定构件的曲率相同的曲率的金属板制成的成形构件; 以及设置在所述上​​部和下部主体部之间的按压部件,其包括按压板,所述按压板通过形成在其后端上的销可旋转地支撑在所述卷取机主体上,并且被弹性元件偏置; 按压部,其通过边界部与压板的前端一体地连接; 以及联接到所述按压部的前端的弹性按压部。 这样的睫毛夹可以提供由塑料制成的简单按钮结构以及金属片的良好卷曲性能的有利效果。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20100140702A1
    • 2010-06-10
    • US12629543
    • 2009-12-02
    • Il-Yong Park
    • Il-Yong Park
    • H01L29/78H01L21/336
    • H01L29/7816H01L29/0653H01L29/7838
    • A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an epitaxial layer over a semiconductor substrate, a first well region over a epitaxial layer, a first isolation layer and/or a third isolation layer at opposite sides of said first well region and/or a second isolation layer over a first well region between first and third isolation layers. A semiconductor device may include a gate over a second isolation layer. A semiconductor device may include a second well region over a first well region between a third isolation layer and a gate, a first ion-implanted region over a second well region between a third isolation layer and a gate, and/or a second ion-implanted region between a first ion-implanted region and a gate. A semiconductor device may include an accumulation channel between a second well region and a gate.
    • 半导体器件和半导体器件的制造方法。 半导体器件可以包括在半导体衬底上的外延层,外延层上的第一阱区,在所述第一阱区的相对侧的第一隔离层和/或第三隔离层和/或第一隔离层 第一和第三隔离层之间的第一阱区。 半导体器件可以包括在第二隔离层上的栅极。 半导体器件可以包括在第三隔离层和栅极之间的第一阱区域上的第二阱区域,在第三隔离层和栅极之间的第二阱区域上的第一离子注入区域和/或第二离子注入区域, 注入区域在第一离子注入区域和栅极之间。 半导体器件可以包括在第二阱区域和栅极之间的累积通道。