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1. 发明申请

US20120294404A1 Nuclear Power Plant and Method of Operating It 审中-公开
标题翻译：核电厂及其运行方式
公开(公告)号：US20120294404A1
公开(公告)日：2012-11-22
申请号：US13454573
申请日：2012-04-24
申请人： Yoichi WADA , Masaya OHTSUKA , Hideaki NISHIKAWA
发明人： Yoichi WADA , Masaya OHTSUKA , Hideaki NISHIKAWA
IPC分类号： G21C17/00 , G21C19/00
CPC分类号： G21C19/317 , G21C9/06 , Y02E30/40
摘要： A hydrogen treatment facility for treating hydrogen without using a power source is disposed outside a reactor containment vessel and in an upper portion of a reactor building. A hydrogen detector detecting hydrogen in the reactor building is connected to a control apparatus operated by an independent power source activated at the time of a station black-out. A circulation passage for air circulation generated in the reactor building is disposed in the reactor building and outside the reactor containment vessel. A hydrogen treatment duct connects to the circulation passage and a gangway and a room with equipment. During a severe accident and station black-out and when hydrogen concentration detected by the hydrogen detection apparatus exceeds a set concentration, the hydrogen treatment duct is put in use by the control apparatus. Air containing the hydrogen is introduced into the hydrogen treatment facilities through the hydrogen treatment duct and the circulation passage.
摘要翻译：用于在不使用电源的情况下处理氢的氢处理设备设置在反应堆容纳容器的外部和反应堆建筑物的上部。在反应堆建筑物中检测氢的氢检测器连接到由在站点熄灭时激活的独立电源操作的控制装置。用于在反应堆建筑物中产生的用于空气循环的循环通道设置在反应堆建筑物中并在反应堆容纳容器外部。氢气处理管道连接到循环通道和通道和设备的房间。在严重事故和车站熄火期间，当氢检测装置检测到的氢浓度超过设定浓度时，控制装置使用氢处理管道。通过氢处理管道和循环通道将含有氢的空气引入氢处理设备。

2. 发明申请

US20110280358A1 MONITORING METHOD AND MONITORING PROGRAM FOR BOILING WATER REACTOR, AND ACOUSTIC DAMPING METHOD FOR BOILING WATER REACTOR 失效
标题翻译：锅炉水反应器监测方法与监测方案及水力反应器的消声阻尼方法
公开(公告)号：US20110280358A1
公开(公告)日：2011-11-17
申请号：US13192606
申请日：2011-07-28
申请人： Masaya OHTSUKA , Kiyoshi Fujimoto , Masaaki Tsubaki
发明人： Masaya OHTSUKA , Kiyoshi Fujimoto , Masaaki Tsubaki
IPC分类号： G21C17/00 , G21C9/004
CPC分类号： G21C17/00 , G21C17/02 , G21D3/001 , G21D3/08 , G21Y2002/201 , G21Y2002/207 , G21Y2002/303 , G21Y2004/40 , G21Y2004/403 , Y02E30/39
摘要： A method for monitoring and acoustic damping a boiling water reactor which includes: a reactor pressure vessel; a steam pipe for transporting steam out from a steam dome of the reactor pressure vessel; a high pressure turbine driven by the steam; a feedwater heater which heats feedwater supplied to the reactor pressure vessel using bleed steam from the high pressure turbine; a bleeding valve which adjusts a flow rate of the bleed steam; and a pressure sensor provided in a main steam line including the steam dome and the steam pipe. The method includes monitoring a fluctuating pressure in the main steam line and controlling an opening degree of the bleeding valve based on a magnitude of the fluctuating pressure.
摘要翻译：一种用于沸水反应器的监测和声阻尼的方法，包括：反应堆压力容器; 蒸汽管，用于将蒸汽从反应堆压力容器的蒸汽圆顶运出; 由蒸汽驱动的高压涡轮机; 给水加热器，其使用来自高压涡轮机的排出蒸汽加热供应到反应堆压力容器的给水; 调节排出蒸汽的流量的排出阀; 以及设置在包括蒸汽穹顶和蒸汽管的主蒸汽管线中的压力传感器。该方法包括监测主蒸汽管线中的波动压力并基于波动压力的大小来控制排气阀的开度。

3. 发明申请

US20090121294A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090121294A1
公开(公告)日：2009-05-14
申请号：US12263127
申请日：2008-10-31
申请人： Masaya OHTSUKA
发明人： Masaya OHTSUKA
IPC分类号： H01L27/088
CPC分类号： H01L27/088
摘要： A semiconductor device is disclosed. The semiconductor device includes a source offset type MOS transistor in which a source and a drain are formed on a semiconductor substrate by having a predetermined distance between the source and the drain, and a gate electrode is formed on the semiconductor substrate between the source and the drain via a gate insulation film. One end of the drain overlaps or abuts on one end of the gate electrode when viewed from above the gate electrode, and the source is formed by having a distance from the gate electrode when viewed from above the gate electrode.
摘要翻译：公开了一种半导体器件。半导体器件包括源偏移型MOS晶体管，其中源极和漏极通过在源极和漏极之间具有预定距离而形成在半导体衬底上，并且栅极电极形成在源极和漏极之间的半导体衬底上通过栅极绝缘膜漏极。当从栅极电极上方观察时，漏极的一端与栅电极的一端重叠或邻接，并且当从栅电极的上方观察时，通过与栅电极的距离形成源极。

4. 发明申请

US20110079873A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110079873A1
公开(公告)日：2011-04-07
申请号：US12888640
申请日：2010-09-23
申请人： Masashi OSHIMA , Masaya OHTSUKA
发明人： Masashi OSHIMA , Masaya OHTSUKA
IPC分类号： H01L29/417
CPC分类号： H01L23/5256 , H01L23/5258 , H01L23/53295 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a base insulating film on which a silicon fuse, silicon wiring patterns, and a silicon guard ring are formed. The silicon guard ring surrounds the silicon fuse and has silicon cutout parts so as not to contact the silicon wiring patterns. A via guard ring, which has via cutout parts located above the silicon cutout parts, is formed in an interlayer insulating film and on the silicon guard ring. A metal wiring guard ring is formed on the via guard ring and the interlayer insulating film. A silicon nitride film is formed on the interlayer insulating film so as to cover the metal wiring guard ring. An interface between the interlayer insulating film and the metal wiring guard ring at the via cutout parts is covered by the silicon nitride film.
摘要翻译：半导体器件包括其上形成有硅熔丝，硅布线图案和硅保护环的基底绝缘膜。硅保护环围绕硅熔丝并具有硅切口部分，以便不接触硅布线图案。具有位于硅缺口部分上方的通孔切口部分的通孔保护环形成在层间绝缘膜中和硅保护环上。在通孔保护环和层间绝缘膜上形成金属布线保护环。在层间绝缘膜上形成氮化硅膜，以覆盖金属布线保护环。在通孔切口部分处的层间绝缘膜和金属布线保护环之间的界面被氮化硅膜覆盖。

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