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1. 发明授权

US07927949B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07927949B2
公开(公告)日：2011-04-19
申请号：US12755532
申请日：2010-04-07
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/3205 , H01L21/4763
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

2. 发明申请

US20100197130A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20100197130A1
公开(公告)日：2010-08-05
申请号：US12755532
申请日：2010-04-07
申请人： Yoshio OZAWA , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio OZAWA , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

3. 发明授权

US07723772B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07723772B2
公开(公告)日：2010-05-25
申请号：US11699502
申请日：2007-01-30
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

4. 发明申请

US20070196985A1 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20070196985A1
公开(公告)日：2007-08-23
申请号：US11699502
申请日：2007-01-30
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

5. 发明授权

US08097503B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08097503B2
公开(公告)日：2012-01-17
申请号：US12926357
申请日：2010-11-12
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8236
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
摘要翻译：根据本发明实施例的制造半导体器件的方法包括在半导体衬底的表面上形成包括侧壁部分和底部的隔离沟槽，或者包括第一平面部分，第二平面部分部分和位于第一平面部分和第二平面部分之间的边界处的阶梯部分，并且将由微波产生的等离子体中产生的等离子体中的氧离子或氮化离子，射频波或电子回旋共振提供给侧壁部分以及通过向半导体衬底施加预定电压来隔离沟槽的底部或第一和第二平面部分和台阶部分的台阶部分，以进行侧壁部分和底部部分的各向异性氧化或各向异性氮化隔离沟槽或第一和第二平面部分以及台阶结构的阶梯部分。

6. 发明申请

US20120282773A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120282773A1
公开(公告)日：2012-11-08
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/302
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

7. 发明授权

US08404537B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08404537B2
公开(公告)日：2013-03-26
申请号：US13487280
申请日：2012-06-04
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/337 , H01L21/8236
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成其上表面和侧表面被暴露的导电膜和上表面暴露的绝缘膜。该方法还包括通过施加微波，射频波或电子回旋共振等将由等离子体产生的等离子体中包含的氧化离子或氮化离子供应到导电膜的暴露侧表面和绝缘膜的暴露的上表面对半导体衬底施加预定的电压，从而进行导电膜的暴露的侧表面和绝缘膜的暴露的上表面的各向异性氧化或各向异性氮化。

8. 发明申请

US20120122294A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120122294A1
公开(公告)日：2012-05-17
申请号：US13326499
申请日：2011-12-15
申请人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
发明人： Isao Kamioka , Junichi Shiozawa , Ryu Kato , Yoshio Ozawa
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L29/7881 , H01L21/76208 , H01L27/11521 , H01L29/66825
摘要： In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film. The method further includes supplying oxidizing ions or nitriding ions contained in plasma, generated by a microwave, a radio-frequency wave, or electron cyclotron resonance, to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part.
摘要翻译：在一个实施例中，制造半导体器件的方法包括在半导体衬底上依次形成待处理的第一和第二膜。该方法还包括通过蚀刻去除第二膜的预定区域，以形成包括侧壁部分和底部的狭缝部分，所述侧壁部分包括第二膜的侧表面，并且底部包括第一膜的上表面电影。该方法还包括通过向半导体施加预定电压将由微波，射频波或电子回旋共振产生的等离子体中包含的氧化离子或氮化离子供应到狭缝部分的侧壁部分和底部。从而进行侧壁部和狭缝部的底部的各向异性氧化或各向异性氮化。

9. 发明申请

US20060240619A1 Semiconductor memory device and method of manufacturing the same 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060240619A1
公开(公告)日：2006-10-26
申请号：US11190120
申请日：2005-07-27
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

10. 发明授权

US08115249B2 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08115249B2
公开(公告)日：2012-02-14
申请号：US12563651
申请日：2009-09-21
申请人： Isao Kamioka , Yoshio Ozawa , Katsuyuki Sekine
发明人： Isao Kamioka , Yoshio Ozawa , Katsuyuki Sekine
IPC分类号： H01L29/88
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/0657 , H01L29/4234 , H01L29/7926
摘要： In a nonvolatile semiconductor memory device, a tunnel insulating layer, a charge storage layer and a charge block layer are formed on a silicon substrate in this order, and a plurality of control gate electrodes are provided above the charge block layer. Moreover, a cap layer made of silicon nitride is formed between the charge block layer and each of the control gate electrode, the cap layer being divided for each gate control electrode.
摘要翻译：在非易失性半导体存储器件中，在硅衬底上依次形成隧道绝缘层，电荷存储层和电荷阻挡层，并且在电荷阻挡层上方设置多个控制栅电极。此外，在电荷阻挡层和控制栅极电极之间形成由氮化硅制成的覆盖层，对于每个栅极控制电极分隔盖层。

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