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1. 发明申请

US20060141686A1 Copper gate electrode of liquid crystal display device and method of fabricating the same 审中-公开
标题翻译：液晶显示装置的铜栅电极及其制造方法
公开(公告)号：US20060141686A1
公开(公告)日：2006-06-29
申请号：US11178427
申请日：2005-07-12
申请人： Yu-Wei Liu , Wen-Ching Tsai , Kou-Yu Huang , Hui-Fen Lin
发明人： Yu-Wei Liu , Wen-Ching Tsai , Kou-Yu Huang , Hui-Fen Lin
IPC分类号： H01L21/84 , H01L21/4763
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78603
摘要： A copper gate electrode, applied in a thin-film-transistor liquid crystal display (TFT-LCD) device, at least comprises an adhesive layer formed on a glass substrate, and a patterned copper layer formed on the adhesive layer. The adhesive layer at least comprises one of nitrogen and phosphorus (for example, polysilazane) for enhancing the electric characteristics of the LCD device.
摘要翻译：施加在薄膜晶体管液晶显示器（TFT-LCD）装置中的铜栅电极至少包括形成在玻璃基板上的粘合剂层和形成在粘合剂层上的图案化铜层。粘合剂层至少包括氮和磷中的一种（例如，聚硅氮烷），用于增强LCD装置的电特性。

2. 发明授权

US07528466B2 Copper gate electrode of liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置的铜栅电极及其制造方法
公开(公告)号：US07528466B2
公开(公告)日：2009-05-05
申请号：US11178436
申请日：2005-07-12
申请人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
发明人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
IPC分类号： H01L21/20
CPC分类号： H01L29/4908
摘要： A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
摘要翻译：施加在薄膜晶体管液晶显示器（LCD）装置中的铜栅电极至少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。阻挡层包括氮和磷中的至少一种，或包含形式为M1M2R的合金，其中M1是钴（Co）或钼（Mo），M2是钨（W），钼（Mo），铼（Re）或钒（V），R为硼（B）或磷（P）。

3. 发明申请

US20060138659A1 Copper gate electrode of liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置的铜栅电极及其制造方法
公开(公告)号：US20060138659A1
公开(公告)日：2006-06-29
申请号：US11178436
申请日：2005-07-12
申请人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
发明人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01L29/4908
摘要： A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
摘要翻译：施加在薄膜晶体管液晶显示器（LCD）装置中的铜栅电极至少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。阻挡层包括氮和磷中的至少一种，或者包含配位为M 1 M 2 R 2的合金，其中M 1是钴（ Co）或钼（Mo），M 2是钨（W），钼（Mo），铼（Re）或钒（V），R是硼（B）或磷（P）。

4. 发明申请

US20090142923A1 COPPER GATE ELECTRODE OF LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：液晶显示装置的铜门电极及其制造方法
公开(公告)号：US20090142923A1
公开(公告)日：2009-06-04
申请号：US12366693
申请日：2009-02-06
申请人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
发明人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
IPC分类号： H01L21/283
CPC分类号： H01L29/4908
摘要： A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
摘要翻译：施加在薄膜晶体管液晶显示器（LCD）装置中的铜栅电极至少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。阻挡层包括氮和磷中的至少一种，或包含形式为M1M2R的合金，其中M1是钴（Co）或钼（Mo），M2是钨（W），钼（Mo），铼（Re）或钒（V），R为硼（B）或磷（P）。

5. 发明授权

US07829393B2 Copper gate electrode of liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置的铜栅电极及其制造方法
公开(公告)号：US07829393B2
公开(公告)日：2010-11-09
申请号：US12366693
申请日：2009-02-06
申请人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
发明人： Yu-Wei Liu , Wen-Ching Tsai , Kuo-Yu Huang , Hui-Fen Lin
IPC分类号： H01L21/00
CPC分类号： H01L29/4908
摘要： A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
摘要翻译：施加在薄膜晶体管液晶显示器（LCD）装置中的铜栅电极至少包括形成在玻璃基板上的图案化铜层和形成在图案化铜层上的阻挡层。阻挡层包括氮和磷中的至少一种，或包含形式为M1M2R的合金，其中M1是钴（Co）或钼（Mo），M2是钨（W），钼（Mo），铼（Re）或钒（V），R为硼（B）或磷（P）。

6. 发明申请

US20110147733A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件结构及其制造方法
公开(公告)号：US20110147733A1
公开(公告)日：2011-06-23
申请号：US12776484
申请日：2010-05-10
申请人： Yih-Chyun KAO , Chun-Nan Lin , Li-Kai Chen , Wen-Ching Tsai
发明人： Yih-Chyun KAO , Chun-Nan Lin , Li-Kai Chen , Wen-Ching Tsai
IPC分类号： H01L29/786 , H01L29/12 , H01L21/34
CPC分类号： H01L29/7869
摘要： A semiconductor device structure on a substrate and a manufacture method thereof is provided. The semiconductor device structure includes an oxide semiconductor transistor and a passivation layer containing free hydrogen. The semiconductor device structure is formed by following steps. A gate electrode is formed on the substrate. A gate dielectric layer covers the gate electrode. A source electrode is formed on the gate dielectric layer. A drain electrode is formed on the gate dielectric layer and separated from the source electrode and thereby forming a channel distance. An oxide semiconductor layer is formed on the gate dielectric layer, the source electrode and the drain electrode and between the source electrode and the drain electrode. The oxide semiconductor layer is further electrically connected with the source electrode and the drain electrode. A passivation layer covers the oxide semiconductor layer, the source electrode and the drain electrode. The passivation layer has a groove formed therein, and the groove surrounds the oxide semiconductor layer.
摘要翻译：提供了一种基板上的半导体器件结构及其制造方法。半导体器件结构包括氧化物半导体晶体管和含有游离氢的钝化层。半导体器件结构通过以下步骤形成。在基板上形成栅电极。栅介质层覆盖栅电极。源极电极形成在栅极电介质层上。在栅极电介质层上形成漏电极，与源电极分离，形成通道距离。在栅极电介质层，源电极和漏电极以及源电极和漏电极之间形成氧化物半导体层。氧化物半导体层进一步与源电极和漏电极电连接。钝化层覆盖氧化物半导体层，源电极和漏电极。钝化层在其中形成有凹槽，并且沟槽围绕氧化物半导体层。

7. 发明申请

US20110014788A1 Display panel structure and manufacture method thereof 有权
公开(公告)号：US20110014788A1
公开(公告)日：2011-01-20
申请号：US12855837
申请日：2010-08-13
申请人： Chun-Nan Lin , Kuo-Yuan Tu , Shu-Feng Wu , Wen-Ching Tsai
发明人： Chun-Nan Lin , Kuo-Yuan Tu , Shu-Feng Wu , Wen-Ching Tsai
IPC分类号： H01L21/3213
CPC分类号： H01L29/4908 , H01L29/458 , H01L29/66757 , H01L29/66765
摘要： A display panel structure having a circuit element disposed thereon and method of manufacture are provided. The display panel includes a substrate and the circuit element disposed on the substrate. The circuit element has a first interface layer and a first conductive layer. Both the first interface layer and the first conductive layer have cooper materials. The material which makes the first interface layer includes a reactant or a compound of the material which makes the first conductive layer. The method for manufacturing includes the following steps: forming a first interface layer on the substrate; forming a first conductive layer on the first interface layer; and etching the first conductive and interface layers to form a pattern. The existence of the first interface reduces the penetration of the first conductive layer on the substrate and improves the adhesive force between the first conductive layer and the substrate.

8. 发明授权

US07417254B2 Switching device for a pixel electrode and methods for fabricating the same 有权
标题翻译：像素电极用开关元件及其制造方法
公开(公告)号：US07417254B2
公开(公告)日：2008-08-26
申请号：US11341822
申请日：2006-01-27
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Han-Tu Lin
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/66765 , H01L27/14609 , H01L29/4908 , H01L29/78669
摘要： The invention discloses a switching devise for a pixel electrode of display devise and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) materia layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/ drain.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关装置及其制造方法。栅极形成在衬底的一部分上。在栅极上形成半导体层。源极和漏极形成在半导体层的一部分上。在栅极和半导体层之间和/或源极/漏极之间形成低k（低介电常数）材料层，例如a-SiC：H或a-SiCN:H层。

9. 发明申请

US20070007630A1 Switching element for a pixel electrode and methods for fabricating the same 审中-公开
标题翻译：用于像素电极的开关元件及其制造方法
公开(公告)号：US20070007630A1
公开(公告)日：2007-01-11
申请号：US11345090
申请日：2006-02-01
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
IPC分类号： H01L23/58
CPC分类号： H01L29/4908
摘要： The invention discloses a switching element for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A high-k dielectric layer is formed on the gate. The high-k dielectric layer comprises HfO2, HfNO, HfSiO, HfSiNO, or HfAlO. A semiconductor layer is formed on the high-k dielectric layer. A source and a drain are formed on a portion of the semiconductor layer.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关元件及其制造方法。栅极形成在基板上。在栅极上形成高k电介质层。高k介电层包括HfO 2 Hf，HfNO，HfSiO，HfSiNO或HfAlO。半导体层形成在高k电介质层上。源极和漏极形成在半导体层的一部分上。

10. 发明申请

US20060284176A1 Switching device for a pixel electrode and methods for fabricating the same 有权
标题翻译：像素电极用开关元件及其制造方法
公开(公告)号：US20060284176A1
公开(公告)日：2006-12-21
申请号：US11247345
申请日：2005-10-11
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关装置及其制造方法。栅极形成在基板上。在栅极上形成栅极绝缘层。在栅极和衬底之间形成缓冲层，和/或形成在栅极和栅极绝缘层之间。缓冲层包括TaSi x N，Ta Si x N y N y，TiSi x x Ti，Ti Si x x， WS 1 x 2，W 1，X 2，X 3，...，N 2， > N 。在栅极绝缘层上形成半导体层。源极和漏极形成在半导体层的一部分上。门被缓冲层覆盖。

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