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1. 发明授权

US08859344B2 Semiconductor memory 有权
公开(公告)号：US08859344B2
公开(公告)日：2014-10-14
申请号：US13314154
申请日：2011-12-07
申请人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
发明人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
IPC分类号： H01L21/82 , H01L45/00 , H01L27/24
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

2. 发明授权

US08833857B2 Vehicle seat 有权
标题翻译：车座
公开(公告)号：US08833857B2
公开(公告)日：2014-09-16
申请号：US13185829
申请日：2011-07-19
申请人： Yoshiro Hara , Yuichi Matsui , Yukinori Sugiura , Tatsuya Ono , Takashi Okada
发明人： Yoshiro Hara , Yuichi Matsui , Yukinori Sugiura , Tatsuya Ono , Takashi Okada
IPC分类号： B60N2/12 , B60N2/68
CPC分类号： B60N2/68
摘要： A vehicle seat includes a pair of lower rails that are attached to a vehicle floor and extend parallel to one another, a pair of upper rails that are slidably attached to the lower rails, and a seat cushion that is attached to the pair of upper rails. The seat cushion includes i) a pair of pipe members, each pipe member being a single member that includes a long portion that extends along the corresponding upper rail, and a leg portion that extends downward from a first end portion of the long portion and that is attached to the corresponding upper rail; ii) a first connecting pipe that connects the first end portions of the pair of long portions together; and iii) a pair of plate members extending from the upper rails to the long portions, and attached to second end portions of the long portions.
摘要翻译：车辆座椅包括附接到车辆地板并且彼此平行延伸的一对下轨道，可滑动地附接到下轨道的一对上轨道和附接到所述一对上轨道的座垫。座垫包括：i）一对管构件，每个管构件是包括沿着相应的上轨道延伸的长部分的单个构件和从长部分的第一端部向下延伸的腿部，并且从长部的第一端部向下延伸的腿部，连接到相应的上轨道; ii）将一对长部的第一端部连接在一起的第一连接管; 以及iii）从上轨道延伸到长部分的一对板构件，并且附接到长部分的第二端部。

3. 发明申请

US20100096613A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100096613A1
公开(公告)日：2010-04-22
申请号：US12522744
申请日：2007-01-11
申请人： Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
发明人： Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.
摘要翻译：相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在界面层和形成在记录层上的上接触电极。根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

4. 发明申请

US20100044672A1 SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器
公开(公告)号：US20100044672A1
公开(公告)日：2010-02-25
申请号：US12613235
申请日：2009-11-05
申请人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
发明人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.
摘要翻译：由于这种材料对高熔点金属和氧化硅膜具有低粘附性，所以相变存储器的制造过程已经受到硫属化物材料易于分层的问题的困扰。此外，硫族化物材料具有低的热稳定性，因此在相变存储器的制造过程中倾向于升华。根据本发明，在硫族化物材料层上和下方形成导电或绝缘粘合剂层以增强其分层强度。此外，在硫族化物材料层的侧壁上形成由氮化物膜构成的保护膜，以防止硫属化物材料层的升华。

5. 发明申请

US20070228427A1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US20070228427A1
公开(公告)日：2007-10-04
申请号：US11723683
申请日：2007-03-21
申请人： Yuichi Matsui , Hiroshi Miki
发明人： Yuichi Matsui , Hiroshi Miki
IPC分类号： H01L29/76
CPC分类号： H01L27/10852 , H01L21/02175 , H01L21/022 , H01L21/02271 , H01L21/31641 , H01L21/31645 , H01L27/10814 , H01L27/10894 , H01L28/91
摘要： HfO2 films and ZrO2 films are currently being developed for use as capacitor dielectric films in 85 nm technology node DRAM. However, these films will be difficult to use in 65 nm technology node or later DRAM, since they have a relative dielectric constant of only 20-25. The dielectric constant of such films may be increased by stabilizing their cubic phase. However, this results in an increase in the leakage current along the crystal grain boundaries, which makes it difficult to use these films as capacitor dielectric films. To overcome this problem, the present invention dopes a base material of HfO2 or ZrO2 with an oxide of an element having a large ion radius, such as Y or La, to increase the oxygen coordination number of the base material and thereby increase its relative dielectric constant to 30 or higher even when the base material is in its amorphous state. Thus, the present invention provides dielectric films that can be used to form DRAM capacitors that meet the 65 nm technology node or later.
摘要翻译：目前正在开发用于85nm技术节点DRAM中的电容器电介质膜的HfO 2膜和ZrO 2膜。然而，这些膜将难以在65nm技术节点或之后的DRAM中使用，因为它们的相对介电常数只有20-25。这些膜的介电常数可以通过稳定它们的立方相来增加。然而，这导致沿着晶粒边界的漏电流的增加，这使得难以将这些膜用作电容器电介质膜。为了克服这个问题，本发明将HfO 2 2或ZrO 2 2的基材与具有大离子半径的元素的氧化物如Y或La掺杂，以增加基材的氧配位数，从而即使当基材处于非晶状态时，其相对介电常数也提高到30以上。因此，本发明提供可用于形成满足65nm技术节点或更高版本的DRAM电容器的电介质膜。

6. 发明申请

US20060266992A1 Semiconductor storage device and manufacturing method thereof 审中-公开
标题翻译：半导体存储装置及其制造方法
公开(公告)号：US20060266992A1
公开(公告)日：2006-11-30
申请号：US11435934
申请日：2006-05-18
申请人： Yuichi Matsui , Tomio Iwasaki , Norikatsu Takaura , Kenzo Kurotsuchi
发明人： Yuichi Matsui , Tomio Iwasaki , Norikatsu Takaura , Kenzo Kurotsuchi
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/1675
摘要： Since a chalcogenide material has low adhesion to a silicon oxide film, there is a problem in that it tends to separate from the film during the manufacturing step of a phase change memory. In addition, since the chalcogenide material has to be heated to its melting point or higher during resetting (amorphization) of the phase change memory, there is a problem of requiring extremely large rewriting current. An interfacial layer comprising an extremely thin insulator or semiconductor having the function as both an adhesive layer and a high resistance layer (thermal resistance layer) is inserted between chalcogenide material layer/interlayer insulative film and between chalcogenide material layer/plug.
摘要翻译：由于硫族化物材料对氧化硅膜的粘附性低，所以存在在相变存储器的制造工序中与膜分离的问题。此外，由于在相变存储器的复位（非晶化）期间必须将硫属化物材料加热至其熔点以上，所以存在需要非常大的重写电流的问题。在硫族化物材料层/层间绝缘膜之间和硫族化物材料层/插塞之间插入包含具有粘合剂层和高电阻层（耐热层）两者的极薄绝缘体或半导体的界面层。

7. 发明申请

US20060105556A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060105556A1
公开(公告)日：2006-05-18
申请号：US11272811
申请日：2005-11-15
申请人： Yuichi Matsui , Motoyasu Terao , Norikatsu Takaura , Takahiro Morikawa , Naoki Yamamoto
发明人： Yuichi Matsui , Motoyasu Terao , Norikatsu Takaura , Takahiro Morikawa , Naoki Yamamoto
IPC分类号： H01L21/20
CPC分类号： C23C14/5806 , C23C14/0623 , C23C14/541 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/144 , H01L45/1625 , H01L45/1641
摘要： The annealing process at 400° C. or more required for the wiring process for a phase change memory has posed the problem in that the crystal grains in a chalcogenide material grow in an oblique direction to cause voids in a storage layer. The voids, in turn, cause peeling due to a decrease in adhesion, variations in resistance due to improper contact with a plug, and other undesirable events. After the chalcogenide material has been formed in an amorphous phase, post-annealing is conducted to form a (111)-oriented and columnarly structured face-centered cubic. This is further followed by high-temperature annealing to form a columnar, hexagonal closest-packed crystal. Use of this procedure makes it possible to suppress the growth of inclined crystal grains that causes voids, since crystal grains are formed in a direction perpendicular to the surface of an associated substrate.
摘要翻译：在相变存储器的布线处理所需的400℃以上所需的退火处理的问题在于，硫属化物材料中的晶粒沿倾斜方向生长，从而在储存层中产生空隙。这些空隙又由于粘合力的降低而导致剥离，由于与插头的不正确接触导致的电阻变化以及其它不期望的事件。在非晶态形成硫族化物材料之后，进行后退火以形成（111）取向和柱状结构的面心立方。此后进一步进行高温退火以形成柱状，六边形最接近填充的晶体。使用该方法可以抑制由于在垂直于相关衬底的表面的方向上形成晶粒而导致空隙的倾斜晶粒的生长。

8. 发明授权

US06833577B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06833577B2
公开(公告)日：2004-12-21
申请号：US10300763
申请日：2002-11-21
申请人： Yuichi Matsui , Masahiko Hiratani
发明人： Yuichi Matsui , Masahiko Hiratani
IPC分类号： H01L27108
CPC分类号： H01L21/022 , C23C16/18 , C23C16/405 , C23C16/56 , H01L21/02175 , H01L21/02183 , H01L21/02194 , H01L21/02271 , H01L21/02356 , H01L21/31604 , H01L21/31637 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/40 , H01L28/56 , H01L28/75 , H01L28/90
摘要： The present invention relates to a structure of a capacitor, in particular using niobium pentoxide, of a semiconductor capacitor memory device. Since niobium pentoxide has a low crystallization temperature of 600° C. or less, niobium pentoxide can suppress the oxidation of a bottom electrode and a barrier metal by heat treatment. However, according to heat treatment at low temperature, carbon incorporated from CVD sources into the film is not easily oxidized or removed. Therefore, a problem that leakage current increases arises. As an insulator film of a capacitor, a layered film composed of a niobium pentoxide film and a tantalum pentoxide film, or a layered film composed of niobium pentoxide films is used. By the use of the niobium pentoxide film, the dielectric constant of the capacitor can be made high and the crystallization temperature can be made low. By multiple-stage formation of the dielectric film, leakage current can be decreased.
摘要翻译：本发明涉及半导体电容器存储器件的电容器的结构，特别是五氧化二铌。由于五氧化二铌具有600℃以下的低结晶温度，所以五氧化二铌可以通过热处理抑制底部电极和阻挡金属的氧化。然而，根据低温热处理，从CVD源引入到膜中的碳不易氧化或除去。因此，出现漏电流增加的问题。作为电容器的绝缘膜，使用由五氧化二铌膜和五氧化二钽膜构成的层叠膜或由五氧化二铌膜构成的层叠膜。通过使用五氧化二铌膜，可以使电容器的介电常数高，可以降低结晶温度。通过电介质膜的多级形成，可以降低泄漏电流。

9. 发明授权

US06534375B2 METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS 有权
标题翻译：在半导体集成电路器件中形成电容器的方法使用金属硅化物层在后续处理步骤中从氧化物中保护金属硅酸盐层
公开(公告)号：US06534375B2
公开(公告)日：2003-03-18
申请号：US09923406
申请日：2001-08-08
申请人： Shinpei Iijima , Yuzuru Ohji , Masato Kunitomo , Masahiko Hiratani , Yuichi Matsui , Hiroyuki Ohta , Yukihiro Kumagai
发明人： Shinpei Iijima , Yuzuru Ohji , Masato Kunitomo , Masahiko Hiratani , Yuichi Matsui , Hiroyuki Ohta , Yukihiro Kumagai
IPC分类号： H01L21285
CPC分类号： H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/31637 , H01L27/10814 , H01L27/10855 , H01L28/60 , H01L28/91
摘要： A disadvantage upon heat treatment in an oxygen atmosphere of a dielectric film formed on a lower electrode of capacitance device of DRAM that oxygen permeating the lower electrode oxidizes a barrier layer to form an oxide layer of high resistance and low dielectric constant is prevented. An Ru silicide layer is formed on the surface of a plug in a through hole formed below a lower electrode for an information storage capacitance device C and an Ru silicon nitride layer is formed further on the surface of the Ru silicide layer. Upon high temperature heat treatment in an oxygen atmosphere conducted in the step of forming a dielectric film on the lower electrode, the Ru silicon nitride layer is oxidized sacrificially into an Ru silicon oxynitride to prevent progress of oxidation in the Ru silicide layer.
摘要翻译：形成在DRAM的电容元件的下部电极上形成的电介质膜的氧气氛中的氧气的缺点是氧气渗透下部电极氧化阻挡层以形成高电阻和低介电常数的氧化物层。在形成在信息容纳电容元件C的下部电极下方的通孔中的插塞表面上形成Ru Ru硅化物层，并且在Ru硅化物层的表面上进一步形成Ru氮化硅层。在下电极上形成电介质膜的步骤中进行的氧气氛中进行高温热处理时，将Ru氮化硅层牺牲性氧化为Ru氮氧化硅，以防止Ru化硅化物层的氧化进行。

10. 发明授权

US07800153B2 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries 有权
标题翻译：具有具有分离的晶界的界面的半导体层的电容电极
公开(公告)号：US07800153B2
公开(公告)日：2010-09-21
申请号：US12328046
申请日：2008-12-04
申请人： Yuichi Matsui , Masahiko Hiratani
发明人： Yuichi Matsui , Masahiko Hiratani
IPC分类号： H01L27/108
CPC分类号： H01L21/022 , C23C16/18 , C23C16/405 , C23C16/56 , H01L21/02175 , H01L21/02183 , H01L21/02194 , H01L21/02271 , H01L21/02356 , H01L21/31604 , H01L21/31637 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/40 , H01L28/56 , H01L28/75 , H01L28/90
摘要： The present invention relates to a structure of a capacitor, in particular using niobium pentoxide, of a semiconductor capacitor memory device. Since niobium pentoxide has a low crystallization temperature of 600° C. or less, niobium pentoxide can suppress the oxidation of a bottom electrode and a barrier metal by heat treatment. However, according to heat treatment at low temperature, carbon incorporated from CVD sources into the film is not easily oxidized or removed. Therefore, a problem that leakage current increases arises. As an insulator film of a capacitor, a layered film composed of niobium pentoxide film and a tantalum pentoxide film, or a layered film composed of niobium pentoxide films is used. By the use of the niobium pentoxide film, the dielectric constant of the capacitor can be made high and the crystallization temperature can be made low. By multiple-stage formation of the dielectric film, leakage current can be decreased.
摘要翻译：本发明涉及半导体电容器存储器件的电容器的结构，特别是五氧化二铌。由于五氧化二铌具有600℃以下的低结晶温度，所以五氧化二铌可以通过热处理抑制底部电极和阻挡金属的氧化。然而，根据低温热处理，从CVD源引入到膜中的碳不易氧化或除去。因此，出现漏电流增加的问题。作为电容器的绝缘膜，使用由五氧化二铌膜和五氧化钽膜构成的层叠膜或由五氧化二铌膜构成的层叠膜。通过使用五氧化二铌膜，可以使电容器的介电常数高，可以降低结晶温度。通过电介质膜的多级形成，可以降低泄漏电流。

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