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1. 发明申请

US20130055171A1 Method, Program Product and Apparatus for Performing Double Exposure Lithography 有权
标题翻译：用于进行双重曝光光刻的方法，程序产品和装置
公开(公告)号：US20130055171A1
公开(公告)日：2013-02-28
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

2. 发明授权

US08120753B2 Method, program product and apparatus for generating a calibrated pupil kernel and method of using the same in a lithography simulation process 有权
标题翻译：用于产生校准瞳孔核的方法，程序产品和装置及其在光刻仿真过程中的使用方法
公开(公告)号：US08120753B2
公开(公告)日：2012-02-21
申请号：US11979839
申请日：2007-11-08
申请人： Gabriel Berger , Tamer Coskun , Sangbong Park , Jang Fung Chen
发明人： Gabriel Berger , Tamer Coskun , Sangbong Park , Jang Fung Chen
IPC分类号： G03B27/32 , G03B27/54
CPC分类号： G03F7/70216 , G03F7/705 , G03F7/70675
摘要： A method of generating a model for simulating the imaging performance of an optical imaging system having a pupil. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation including a calibrated pupil kernel. The calibrated pupil kernel representing a linear model of the pupil performance.
摘要翻译：一种生成用于模拟具有瞳孔的光学成像系统的成像性能的模型的方法。该方法包括以下步骤：定义光学成像系统和由光学成像系统利用的过程; 并且定义表示光学成像系统和过程的成像性能的模型方程，其中模型方程式包括校准的瞳孔核心。校准瞳孔代表瞳孔表现的线性模型。

3. 发明授权

US07981576B2 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US07981576B2
公开(公告)日：2011-07-19
申请号：US12890494
申请日：2010-09-24
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G03F1/14 , G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

4. 发明授权

US07774736B2 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography 有权
标题翻译：用于将深度亚波长光学光刻的掩模版图案提供光学邻近特征的方法和装置
公开(公告)号：US07774736B2
公开(公告)日：2010-08-10
申请号：US11714147
申请日：2007-03-06
申请人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
发明人： Douglas Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Duan-Fu Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70441
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

5. 发明授权

US07620930B2 Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography 有权
标题翻译：用于基于模型的散射棒放置的方法，程序产品和装置，用于在四分之一波长光刻中增强聚焦深度
公开(公告)号：US07620930B2
公开(公告)日：2009-11-17
申请号：US11208015
申请日：2005-08-22
申请人： Douglas Van Den Broeke , Jang Fung Chen
发明人： Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36
摘要： A method of generating a mask is provided that optimizes the placement and shape of optical proximity correction (OPC) features such as scattering bars. According to some aspects, the method includes model-based techniques for determining where to place assist features within the design, thereby eliminating the need for experienced mask designers to perform OPC, and also substantially reducing the time required to determine an acceptable OPC solution. According to further aspects, the method provides an OPC assist feature placement technique that enhances the resulting depth of focus even when imaging features have dimensions on the order of a quarter of the wavelength of the imaging system.
摘要翻译：提供了一种产生掩模的方法，其优化了诸如散射条之类的光学邻近校正（OPC）特征的放置和形状。根据一些方面，该方法包括用于确定在设计中放置辅助特征的位置的基于模型的技术，从而消除了对有经验的掩模设计者执行OPC的需要，并且还显着减少了确定可接受的OPC解决方案所需的时间。根据另外的方面，该方法提供了一种OPC辅助特征放置技术，即使当成像特征具有成像系统的四分之一波长的尺寸时，也可增强所得到的聚焦深度。

6. 发明授权

US07523438B2 Method for improved lithographic patterning utilizing optimized illumination conditions and high transmission attenuated PSM 有权
标题翻译：利用优化照明条件和高透射衰减PSM改进光刻图案的方法
公开(公告)号：US07523438B2
公开(公告)日：2009-04-21
申请号：US11108665
申请日：2005-04-19
申请人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Van Den Broeke , Jang Fung Chen
发明人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/32 , G03F7/70091 , G03F7/70125 , G03F7/70283 , G03F7/70466 , G03F7/70591
摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.
摘要翻译：一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

7. 发明授权

US07514183B2 Method for performing transmission tuning of a mask pattern to improve process latitude 失效
标题翻译：用于执行掩模图案的传输调谐以提高处理纬度的方法
公开(公告)号：US07514183B2
公开(公告)日：2009-04-07
申请号：US10981762
申请日：2004-11-05
申请人： Stephen D. Hsu , Jang Fung Chen , Xuelong Shi , Douglas Van Den Broeke
发明人： Stephen D. Hsu , Jang Fung Chen , Xuelong Shi , Douglas Van Den Broeke
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441
摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.
摘要翻译：一种生成用于光刻工艺的掩模的方法。该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

8. 发明授权

US07493589B2 Method, program product and apparatus for model based geometry decomposition for use in a multiple exposure process 有权
标题翻译：用于多重曝光过程中用于基于模型的几何分解的方法，程序产品和装置
公开(公告)号：US07493589B2
公开(公告)日：2009-02-17
申请号：US11496742
申请日：2006-08-01
申请人： Robert John Socha
发明人： Robert John Socha
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/36 , G03F1/70 , G03F7/70433 , G03F7/705
摘要： A method of decomposing a target pattern having features to be imaged on a substrate so as to allow said features to be imaged in a multi-exposure process. The method includes the steps of: (a) segmenting a plurality of the features into a plurality of polygons; (b) determining the image log slope (ILS) value for each of the plurality of polygons; (c) determining the polygon having the minimum ILS value, and defining a mask containing the polygon; (d) convolving the mask defined in step (c) with an eigen function of a transmission cross coefficient so as to generate an interference map, where the transmission cross coefficient defines the illumination system to be utilized to image the target pattern; and (e) assigning a phase to the polygon based on the value of the interference map at a location corresponding to the polygon, where the phase defines which exposure in said multi-exposure process the polygon is assigned.
摘要翻译：一种分解具有要在基底上成像的特征的目标图案的方法，以便允许所述特征在多曝光过程中成像。该方法包括以下步骤：（a）将多个特征分割为多个多边形; （b）确定所述多个多边形中的每一个的图像对数斜率（ILS）值; （c）确定具有最小ILS值的多边形，并且定义包含多边形的掩模; （d）将步骤（c）中定义的掩模与传输交叉系数的本征函数进行卷积，以产生干涉图，其中传输交叉系数定义要用于对目标图案成像的照明系统; 以及（e）基于在与所述多边形相对应的位置处的所述干涉图的值将相位分配给所述多边形，其中所述相位定义在所述多曝光处理中分配多边形的曝光。

9. 发明授权

US07434195B2 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

10. 发明授权

US07349066B2 Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence 有权
标题翻译：用于执行基于模型的光学邻近校正因子分解邻域影响的装置，方法和计算机程序产品
公开(公告)号：US07349066B2
公开(公告)日：2008-03-25
申请号：US11122220
申请日：2005-05-05
申请人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Antonius Eurlings , Thomas Laidig , Uwe Hollerbach
IPC分类号： G03B27/70 , G03B27/42 , G06F17/50
CPC分类号： G03F1/36
摘要： Model Based Optical Proximity Correction (MOPC) biasing techniques may be utilized for optimizing a mask pattern. However, conventional MOPC techniques do not account for influence from neighboring features on a mask. This influence may be factored in the following manner—first, generating a predicted pattern from a target pattern and selecting a plurality of evaluation points at which biasing may be determined. Next, a set of multivariable equations are generated for each evaluation point, each equation representing influence of neighboring features on a mask. The equations are solved to determine that amount of bias at each evaluation point, and the mask is optimized accordingly. This process may be repeated until the mask pattern is further optimized.
摘要翻译：基于模型的光学邻近校正（MOPC）偏置技术可用于优化掩模图案。然而，传统的MOPC技术不能解释掩模上相邻特征的影响。这种影响可以以以下方式考虑：首先，从目标图案生成预测图案，并且选择可以确定偏置的多个评估点。接下来，为每个评估点生成一组多变量方程，每个方程表示相邻特征对掩模的影响。求解等式以确定每个评估点的偏差量，并相应地优化掩模。可以重复该过程，直到掩模图案进一步优化。

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