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1. 发明授权

US09025136B2 System and method for manufacturing three dimensional integrated circuits 有权
标题翻译：制造三维集成电路的系统和方法
公开(公告)号：US09025136B2
公开(公告)日：2015-05-05
申请号：US13225404
申请日：2011-09-02
申请人： Jang Fung Chen , Thomas Laidig
发明人： Jang Fung Chen , Thomas Laidig
IPC分类号： G03B27/44 , G03F7/20
CPC分类号： G03B27/42 , G03F7/70275 , G03F7/70283 , G03F7/70291 , G03F7/70391 , G03F7/70433 , G03F7/70475 , G03F7/70491 , G03F7/70508
摘要： System and method for manufacturing three-dimensional integrated circuits are disclosed. In one embodiment, the method includes providing an imaging writer system that includes a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving mask data to be written to one or more layers of the three-dimensional integrated circuit, processing the mask data to form a plurality of partitioned mask data patterns corresponding to the one or more layers of the three-dimensional integrated circuit, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the one or more layers of the three-dimensional integrated circuits in parallel. The method of assigning performs at least one of scaling, alignment, inter-ocular displacement, rotational factor, or substrate deformation correction.
摘要翻译：公开了用于制造三维集成电路的系统和方法。在一个实施例中，该方法包括提供一种成像写入器系统，该系统包括布置在一个或多个并行阵列中的多个空间光调制器（SLM）成像单元，接收要写入三维集成的一个或多个层的掩模数据处理掩模数据以形成与三维集成电路的一层或多层相对应的多个划分的掩模数据模式，分配一个或多个SLM成像单元以处理每个分割的掩模数据模式，并且控制多个SLM成像单元将多个划分的掩模数据图案并行地写入三维集成电路的一个或多个层。分配方法执行缩放，对准，眼内位移，旋转因子或基底变形校正中的至少一个。

2. 发明授权

US07550235B2 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
发明人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
IPC分类号： G03F1/02
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

3. 发明授权

US07549140B2 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography 有权
标题翻译：将半导体器件图案分解为无铬相光刻的相位和铬区域的方法和装置
公开(公告)号：US07549140B2
公开(公告)日：2009-06-16
申请号：US11035737
申请日：2005-01-18
申请人： Doug Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Hsu
发明人： Doug Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Hsu
IPC分类号： G06F17/50 , G06F19/00 , G21K5/00 , G03F1/00
CPC分类号： G03F1/34 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).
摘要翻译：一种生成用于在基板上印刷目标图案的掩模的方法。该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

4. 发明授权

US07354681B2 Scattering bar OPC application method for sub-half wavelength lithography patterning 有权
标题翻译：散射棒用于半波长光刻图案的OPC应用方法
公开(公告)号：US07354681B2
公开(公告)日：2008-04-08
申请号：US10880376
申请日：2004-06-30
申请人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
发明人： Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F9/00
CPC分类号： G03F1/36
摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.
摘要翻译：一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

5. 发明授权

US07231629B2 Feature optimization using enhanced interference mapping lithography 有权
标题翻译：使用增强干涉映射光刻技术的特征优化
公开(公告)号：US07231629B2
公开(公告)日：2007-06-12
申请号：US10976306
申请日：2004-10-29
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要翻译：公开的概念包括使用光学系统优化相对于给定掩模在衬底表面中形成的图案的强度分布的方法和程序产品。步骤包括在数学上表示来自给定掩模的可解析特征，产生表示光学系统的某些特性的数学表达式，本征函数，通过滤波修改数学本征函数，根据滤波后的特征函数产生干涉图，给定掩模的数学表达式，以及基于干涉图确定给定掩模的辅助特征。结果，可以使衬底表面中不期望的印刷最小化。

6. 发明申请

US20060010417A1 Apparatus, method and program product for suppressing waviness of features to be printed using photolithographic systems 有权
标题翻译：用于抑制使用光刻系统打印的特征的波纹的装置，方法和程序产品
公开(公告)号：US20060010417A1
公开(公告)日：2006-01-12
申请号：US11092983
申请日：2005-03-30
申请人： Markus Franciscus Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
发明人： Markus Franciscus Eurlings , Melchior Mulder , Thomas Laidig , Uwe Hollerbach
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method for minimizing rippling of features when imaged on a surface of a substrate using a mask. The method includes the steps of determining a deviation between a first representation of the design and a second representation of an image of the design at each of a plurality of evaluation points for each section of a plurality of sections of the design; determining an amount of modification of the design at each section based on an evaluation of the plurality of evaluation points; and modifying the design at each section by the amount determined in the previous step.
摘要翻译：一种当使用掩模在衬底的表面上成像时最小化特征波纹的方法。该方法包括以下步骤：在设计的多个部分的每个部分的多个评估点中的每一个处确定设计的第一表示和设计的图像的第二表示之间的偏差; 基于所述多个评价点的评价来确定每个部分处的所述设计的修改量; 并在每个部分修改设计在上一步确定的量。

7. 发明申请

US20050149900A1 Feature optimization using enhanced interference mapping lithography 有权
标题翻译：使用增强干涉映射光刻技术的特征优化
公开(公告)号：US20050149900A1
公开(公告)日：2005-07-07
申请号：US10976306
申请日：2004-10-29
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G03F1/00 , G03F1/36 , H01L21/027 , G06F17/50
CPC分类号： G03F1/36
摘要： Disclosed concepts include a method of, and program product for, optimizing an intensity profile of a pattern to be formed in a surface of a substrate relative to a given mask using an optical system. Steps include mathematically representing resolvable feature(s) from the given mask, generating a mathematical expression, an eigenfunction, representing certain characteristics of the optical system, modifying the mathematical the eigenfunction by filtering, generating an interference map in accordance with the filtered eigenfunction and the mathematical expression of the given mask, and determining assist features for the given mask based on the interference map. As a result, undesired printing in the surface of the substrate may be minimized.
摘要翻译：公开的概念包括使用光学系统优化相对于给定掩模在衬底表面中形成的图案的强度分布的方法和程序产品。步骤包括在数学上表示来自给定掩模的可解析特征，产生表示光学系统的某些特性的数学表达式，本征函数，通过滤波修改数学本征函数，根据滤波后的特征函数产生干涉图，给定掩模的数学表达式，以及基于干涉图确定给定掩模的辅助特征。结果，可以使衬底表面中不期望的印刷最小化。

8. 发明授权

US06851103B2 Method and apparatus for decomposing semiconductor device patterns into phase and chrome regions for chromeless phase lithography 有权
公开(公告)号：US06851103B2
公开(公告)日：2005-02-01
申请号：US10395903
申请日：2003-03-25
申请人： Doug Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Hsu
发明人： Doug Van Den Broeke , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Stephen Hsu
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , G06F17/50 , G03F9/00 , G06F19/00 , G21K5/00
CPC分类号： G03F1/34 , G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70466 , G03F7/70941
摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

9. 发明授权

US08914143B1 Method and system for handling substrates 有权
标题翻译：处理基板的方法和系统
公开(公告)号：US08914143B1
公开(公告)日：2014-12-16
申请号：US13098296
申请日：2011-04-29
申请人： Jeffrey Kaskey , Thomas Laidig , Dave Markle , Jang-Fung Chen
发明人： Jeffrey Kaskey , Thomas Laidig , Dave Markle , Jang-Fung Chen
IPC分类号： G06F19/00 , G03F9/00
CPC分类号： G03F9/7023 , G03F7/707 , G03F7/70791 , G03F7/7085 , G03F7/709
摘要： System and method for handling substrates in a lithography manufacturing process are disclosed. In one embodiment, a system for handling substrates in a lithography manufacturing process includes a plurality of porous chucks positioned above a substrate for imaging, a plurality of pressure sources configured to apply pressured air towards the substrate through the plurality of porous chucks, a plurality of vacuums configured to apply suction force away from the substrate, and a controller with control logic configured to hold the substrate in place by controlling the pressured air applied by the plurality of pressure sources and the suction force generated by the plurality of vacuums.
摘要翻译：公开了在光刻制造工艺中处理衬底的系统和方法。在一个实施例中，用于在光刻制造工艺中处理衬底的系统包括多个位于衬底上用于成像的多孔卡盘，多个压力源被配置为通过多个多孔卡盘向衬底施加加压空气，多个构造成将吸力施加离开基底的真空器，以及具有控制逻辑的控制器，其配置成通过控制由多个压力源施加的加压空气和由多个真空产生的吸力来将基板保持在适当位置。

10. 发明授权

US08390786B2 Optical imaging writer system 有权
标题翻译：光学成像系统
公开(公告)号：US08390786B2
公开(公告)日：2013-03-05
申请号：US12897726
申请日：2010-10-04
申请人： Thomas Laidig
发明人： Thomas Laidig
IPC分类号： G03B27/54 , G03B27/42
CPC分类号： G03F7/70291 , G03F7/70475 , G03F7/70508
摘要： System and method for processing image data between adjacent imaging areas in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system which has a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, identifying an overlapping region between adjacent imaging areas to be imaged by corresponding SLMs, determining a stitching path for merging the adjacent imaging areas in the overlapping region in accordance with a set of predetermined cost functions, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the substrate in parallel using the stitching path.
摘要翻译：公开了在光刻制造工艺中在相邻成像区域之间处理图像数据的系统和方法。在一个实施例中，该方法包括提供并行成像写入器系统，其具有布置在一个或多个并行阵列中的多个空间光调制器（SLM）成像单元，接收要写入衬底的掩模数据模式，处理掩模数据形成与衬底的不同区域相对应的多个划分的掩模数据图案，识别由相应的SLM成像的相邻成像区域之间的重叠区域，确定用于根据重叠区域合并相邻成像区域的缝合路径一组预定的成本函数，并且控制所述多个SLM成像单元使用所述缝合路径并行地将所述多个划分的掩模数据图案写入所述基板。

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