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    • 5. 发明授权
    • Semiconductor light emitting device and optical film
    • 半导体发光器件和光学膜
    • US09577164B2
    • 2017-02-21
    • US14914552
    • 2014-09-01
    • Asahi Kasei E-materials Corporation
    • Hiroyuki TsujimotoAtsushi SuzukiJunji KatoShozo Takada
    • H01L33/00H01L33/58H01L33/22H01L33/44
    • H01L33/58H01L33/0012H01L33/005H01L33/22H01L33/44H01L2933/0025H01L2933/0058
    • A semiconductor light emitting device, which can endure a dicing step for singulation, is superior in resistance to a high/low thermal cycle, and exhibits a high light extraction efficiency, and an optical film, which can be used favorably for producing the semiconductor light emitting device, are to be provided. The invention provides a semiconductor light emitting device comprising a semiconductor layer, an A layer, and a B layer, in which the semiconductor light emitting device is configured such that at least a part of emitted light from the semiconductor layer is emitted outward from the B layer through the A layer, the thickness of the A layer is from 1 nm to 200 nm, the B layer has a first major surface and a second major surface, while the first major surface faces the A layer and the second major surface has a concave-convex microstructure, the B layer contains an inorganic substance at 60 mass-% or more on the basis of the total mass of the B layer, and the content of an inorganic substance present in the A layer is lower than the content of the inorganic substance present in the B layer.
    • 能够承受用于分割的切割步骤的半导体发光器件在耐高温/低热循环中具有优异的光提取效率,并且可以有利地用于制造半导体光 发光装置。 本发明提供一种包括半导体层,A层和B层的半导体发光器件,其中半导体发光器件被配置为使得来自半导体层的发射光的至少一部分从B向外发射 通过A层,A层的厚度为1nm至200nm,B层具有第一主表面和第二主表面,而第一主表面面向A层,第二主表面具有第二主表面 凹凸微观结构,B层基于B层的总质量含有60质量%以上的无机物质,A层中存在的无机物的含量低于 无机物质存在于B层。