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1. 发明申请

US20120003574A1 ELECTROPHOTOGRAPHY PHOTORECEPTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTROPHOTOGRAPHY DEVICE USING THE SAME 审中-公开
标题翻译：电摄影光电子体，其制造方法和使用其的电子照相装置
公开(公告)号：US20120003574A1
公开(公告)日：2012-01-05
申请号：US12735860
申请日：2009-02-17
申请人： Seizo Kitagawa , Yoichi Nakamura , Hiroshi Emori , Yasushi Tanaka , Hiroyuki Ichiyanagi
发明人： Seizo Kitagawa , Yoichi Nakamura , Hiroshi Emori , Yasushi Tanaka , Hiroyuki Ichiyanagi
IPC分类号： G03G15/00
CPC分类号： G03G5/047 , G03G5/0535 , G03G5/0616
摘要： A positive-charging electrophotography photoreceptor includes a laminated structure having a conductive supporting member, a charge transport layer formed of at least a hole transport material and a first binder resin, and a charge generation layer formed of at least a charge generation material, hole transport material, electron transport material, and second binder resin. The charge transport layer is disposed between the conductive supporting member and the charge generation layer. The content of the charge generation material in the charge generation layer is in a range exceeding 0.7 wt % and less than 3.0 wt % of the charge generation layer.
摘要翻译：正电荷电子照相感光体包括具有导电性支撑构件的层压结构体，至少由空穴传输材料形成的电荷传输层和第一粘合剂树脂，以及至少由电荷产生材料形成的电荷产生层，材料，电子传输材料和第二粘合剂树脂。电荷传输层设置在导电支撑构件和电荷产生层之间。电荷产生层中的电荷产生材料的含量在电荷产生层的超过0.7重量％且小于3.0重量％的范围内。

2. 发明授权

US08084893B2 Semiconductor device for controlling switching power supply 有权
标题翻译：用于控制开关电源的半导体器件
公开(公告)号：US08084893B2
公开(公告)日：2011-12-27
申请号：US12385527
申请日：2009-04-10
申请人： Masanari Fujii
发明人： Masanari Fujii
IPC分类号： H01H35/00
CPC分类号： H02M1/36 , H02M1/32 , Y10T307/858
摘要： A semiconductor device controls a switching power supply. The semiconductor device includes a current inflow terminal; a starter circuit to cause a starting current to flow from the current inflow terminal to a power supply terminal to charge a capacitor externally connected to the power supply terminal; a control unit which controls the starter circuit to turn on to charge the capacitor with the starting current and controls the starter circuit to turn off to perform brown-out detection; a comparator which detects a brown-out state while the starter circuit is turned off; and a brown-out detection unit which receives output signals from the comparator and the control unit as inputs. The brown-out detection is performed while the starter circuit is off, so that the current inflow terminal for the starter circuit is used in common as a voltage detection terminal for detection of the brown-out state.
摘要翻译：半导体器件控制开关电源。半导体器件包括电流流入端子; 起动电路，其使起动电流从所述电流流入端流向电源端子，对外部连接到所述电源端子的电容器进行充电; 控制单元，其控制起动器电路接通以使起动电流对电容器充电，并控制起动器电路关闭以执行欠压检测; 比较器，其在起动器电路断开时检测出欠压状态; 以及从比较器和控制单元接收输出信号作为输入的欠压检测单元。在启动电路断开的同时执行欠压检测，使起动电路的电流流入端子作为用于检测欠压状态的电压检测端子共同使用。

3. 发明申请

US20110248564A1 Electric power converting system 有权
标题翻译：电力转换系统
公开(公告)号：US20110248564A1
公开(公告)日：2011-10-13
申请号：US13064196
申请日：2011-03-10
申请人： Tetsuo Hida
发明人： Tetsuo Hida
IPC分类号： H02M7/44
CPC分类号： H02M7/48 , H02M2001/008 , H02M2001/322 , Y10T307/406 , Y10T307/766
摘要： An electric power converting system includes a common DC power supply, and a plurality of inverter sets operated mutually independently to one another, and supplied with electric power from the common DC power supply. Each inverter set has an inverter circuit and a main circuit capacitor. The system further includes a plurality of first and second switching circuits. Each first switching circuit is provided between the common DC power supply and each inverter set, and each second switching circuit is provided in each inverter set for discharging charges in the main circuit capacitor.
摘要翻译：电力转换系统包括公共直流电源和相互独立操作的多个逆变器组，并从公共直流电源提供电力。每个逆变器组具有一个逆变器电路和一个主电路电容器。该系统还包括多个第一和第二开关电路。每个第一开关电路设置在公共直流电源和每个逆变器组之间，并且每个第二开关电路设置在每个逆变器组中，用于对主电路电容器中的电荷进行放电。

4. 发明授权

US08014118B2 Load driving circuit, driver IC having a load driving circuit, and plasma display panel having a driver IC 有权
标题翻译：负载驱动电路，具有负载驱动电路的驱动器IC和具有驱动器IC的等离子体显示面板
公开(公告)号：US08014118B2
公开(公告)日：2011-09-06
申请号：US12071690
申请日：2008-02-25
申请人： Koji Ikegami , Hideto Kobayashi , Hitoshi Sumida , Hiroshi Shimabukuro
发明人： Koji Ikegami , Hideto Kobayashi , Hitoshi Sumida , Hiroshi Shimabukuro
IPC分类号： H02H9/00
CPC分类号： G09G3/296 , G09G2330/04
摘要： A load driving circuit in which a load is connected to the connecting point of transistors as low-side and high-side main switch elements that have a totem pole structure and are connected between a pair of drive voltage supply lines. A protection circuit section is provided for the high-side transistor. In the protection circuit section, a resistor as a voltage control element is provided for a MOSFET as an overvoltage prevention switch and a capacitor is connected between the gate and the drain of the MOSFET.
摘要翻译：一种负载驱动电路，其中负载连接到晶体管的连接点，作为具有图腾柱结构并连接在一对驱动电压电源线之间的低侧和高侧主开关元件。为高侧晶体管提供保护电路部分。在保护电路部分中，为MOSFET提供作为电压控制元件的电阻器作为过电压防止开关，并且在MOSFET的栅极和漏极之间连接电容器。

5. 发明授权

US08013585B2 DC-DC converter and DC-DC power conversion method employing overcurrent protection 有权
标题翻译： DC-DC转换器和采用过流保护的DC-DC电源转换方法
公开(公告)号：US08013585B2
公开(公告)日：2011-09-06
申请号：US12051556
申请日：2008-03-19
申请人： Kouhei Yamada
发明人： Kouhei Yamada
IPC分类号： G05F1/573
CPC分类号： H02M3/158 , H02M1/32
摘要： An overcurrent detection circuit (50 in FIG. 1) in a DC-DC converter is connected to a switching control circuit (1), and detects an inductor current flowing through an inductor (L) during the ON control of a switching element (Mn), so as to decide whether the inductor current has decreased down to a prescribed value. The switching control circuit (1) alters the switching timing of a control signal to extend the OFF state of a switching element (Mp) until the decrease of the inductor current to a predetermined magnitude is decided by the overcurrent detection circuit (50). Even when a delay is involved in an overcurrent detection operation, the DC-DC converter is still capable of overcurrent limitation.
摘要翻译： DC-DC转换器中的过电流检测电路（图1中的50）连接到开关控制电路（1），并且在开关元件的ON控制期间检测流过电感器（L）的电感器电流（Mn ），以便确定电感器电流是否已经下降到规定值。切换控制电路（1）改变控制信号的切换定时，以延长开关元件（Mp）的截止状态，直到由过电流检测电路（50）确定电感器电流减小至预定幅度。即使过电流检测动作存在延迟，DC-DC转换器仍然能够进行过电流限制。

6. 发明申请

US20110207296A1 FABRICATION METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110207296A1
公开(公告)日：2011-08-25
申请号：US13027761
申请日：2011-02-15
申请人： Seiji Momota
发明人： Seiji Momota
IPC分类号： H01L21/36
CPC分类号： H01L29/7813 , H01L29/0856 , H01L29/66727 , H01L29/66734
摘要： A semiconductor-device fabrication method includes forming a second semiconductor region of a second conductivity on a surface layer of a first semiconductor region of a first conductivity, the second semiconductor region having an impurity concentration higher than the first semiconductor region; forming a trench penetrating the second semiconductor region, to the first semiconductor region; embedding a first electrode inside the trench via an insulating film, at a height lower than a surface of the second semiconductor region; forming an interlayer insulating film inside the trench, covering the first electrode; leaving the interlayer insulating film on only a surface of the first electrode; removing the second semiconductor region such that the surface thereof is positioned lower than an interface between the first electrode and the interlayer insulating film; and forming a second electrode contacting the second semiconductor region and adjacent to the first electrode via the insulating film in the trench.
摘要翻译：半导体器件制造方法包括在第一导电性的第一半导体区域的表面层上形成具有高于第一半导体区域的杂质浓度的第二半导体区域的第二导电性区域; 形成穿过所述第二半导体区域的沟槽到所述第一半导体区域; 在第二半导体区域的表面以下的高度，经由绝缘膜将第一电极嵌入沟槽内; 在所述沟槽内形成层间绝缘膜，覆盖所述第一电极; 仅在第一电极的表面上留下层间绝缘膜; 去除所述第二半导体区域使得其表面定位成低于所述第一电极和所述层间绝缘膜之间的界面; 以及通过沟槽中的绝缘膜形成与第二半导体区域接触并与第一电极相邻的第二电极。

7. 发明授权

US07999317B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07999317B2
公开(公告)日：2011-08-16
申请号：US12318868
申请日：2009-01-09
申请人： Hong-Fei Lu , Mizushima Tomonori
发明人： Hong-Fei Lu , Mizushima Tomonori
IPC分类号： H01L29/66
CPC分类号： H01L29/7824 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7394 , H01L29/7816
摘要： A p-type body region and an n-type buffer region are formed on an n− drift region. An n++ emitter region and a p++ contact region are formed on the p-type body region in contact with each other. A p++ collector region is formed on the n-type buffer region. An insulating film is formed on the n− drift region, and a gate insulating film is formed on the n++ emitter region, the p-type body region, and the n drift region. A gate electrode is formed on the insulating film and the gate insulating film. A p+ low-resistivity region is formed in the p-type body region and surrounding the interface between the n++ emitter region and between the p-type body region and the p++ contact region. The p-type body region has two local maxima of an impurity concentration profile at the interface between the body region and the gate insulating film.
摘要翻译： p型体区域和n型缓冲区域形成在n漂移区域上。在彼此接触的p型体区域上形成n ++发射极区域和p ++接触区域。在n型缓冲区上形成p ++集电极区域。在n漂移区域上形成绝缘膜，在n ++发射极区域，p型体区域和n漂移区域上形成栅极绝缘膜。在绝缘膜和栅极绝缘膜上形成栅电极。在p型体区域中形成p +低电阻率区域，并且围绕n ++发射极区域与p型体区域和p ++接触区域之间的界面。 p型体区域在体区和栅极绝缘膜之间的界面处具有两个局部最大值的杂质浓度分布。

8. 发明申请

US20110189603A1 ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电子光电子器件及其制造方法
公开(公告)号：US20110189603A1
公开(公告)日：2011-08-04
申请号：US12990544
申请日：2009-04-02
申请人： Ikuo Takaki , Yoichi Nakamura , Seizo Kitagawa , Kazuki Nebashi , Fengqiang Zhu
发明人： Ikuo Takaki , Yoichi Nakamura , Seizo Kitagawa , Kazuki Nebashi , Fengqiang Zhu
IPC分类号： G03G5/04
CPC分类号： G03G5/0564 , G03G2215/00957 , G03G2215/00987
摘要： Electrophotographic photoconductor including a conductive substrate; and a photosensitive layer provided on the conductive substrate and including at least a charge generation material; a charge transport material; and a resin binder including a copolymer polyarylate resin represented by general formula (I) below: and manufacturing method therefore. Good images with less cracking occurrence are obtained during recycling of a photosensitive drum and peripheral members thereof that includes the electrophotographic photoconductor, and also when a liquid development process is employed.
摘要翻译：电子照相感光体包括导电性基材; 以及设置在所述导电基板上并且至少包括电荷产生材料的感光层; 电荷输送材料; 和含有下述通式（I）表示的共聚物聚芳酯树脂的树脂粘合剂及其制造方法。在包括电子照相感光体的感光鼓及其周边部件的再循环期间，以及采用液体显影处理时，都能获得具有较少裂纹发生的良好图像。

9. 发明申请

US20110186999A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110186999A1
公开(公告)日：2011-08-04
申请号：US12879940
申请日：2010-09-10
申请人： Fumihiko Momose , Kazumasa Kido , Yoshitaka Nishimura , Fumio Shigeta
发明人： Fumihiko Momose , Kazumasa Kido , Yoshitaka Nishimura , Fumio Shigeta
IPC分类号： H01L23/52 , H01L21/50
CPC分类号： H01L24/80 , H01L21/50 , H01L23/52 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： Hardness of bonding end portions of an external connection terminal to be bonded to circuit patterns of an insulating substrate which is not lower than 90 in Vickers hardness is disclosed. An ultrasonic welding tool is used. In the external connection terminal in which the bonding end portions are provided integrally with a bar, one of the bonding end portion located substantially in the lengthwise center of the bar is first bonded, and the other bonding end portions are bonded alternately in order toward either end. The hardness of the bonding end portions is increased so that strength of the ultrasonic welding portions is increased. Since the external connection terminal including the bonding end portions is bonded in such a manner that the bonding end portion located substantially in the center is first bonded and the other bonding end portions are then bonded in order of increasing distance substantially from the central bonding end portion, displacement of the bonding end portion in either end from its regular position can be suppressed to keep bonding strength high. In this manner, the bonding strength of the ultrasonic welding portions between the external connection terminal and the circuit patterns of the insulating substrate can be increased so that long-term reliability can be secured in a semiconductor device.
摘要翻译：公开了将待接合的外部连接端子的端部与维氏硬度不低于90的绝缘基板的电路图案的接合端的硬度。使用超声波焊接工具。在接合端部与棒一体设置的外部连接端子中，首先将位于棒的纵向中心的接合端部中的一个接合，并且另一个接合端部交替地接合以朝向结束。接合端部的硬度增加，使得超声波焊接部的强度增加。由于包括接合端部的外部连接端子以这样的方式被接合，使得基本上位于中心的接合端部被首先接合，并且接着另外的接合端部按照与中心接合端部可以抑制任一端的接合端部从其规则位置的位移，保持接合强度高。以这种方式，可以增加外部连接端子和绝缘基板的电路图案之间的超声波焊接部分的接合强度，从而可以确保半导体器件的长期可靠性。

10. 发明申请

US20110186965A1 REVERSE-CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR 有权
标题翻译：反向绝缘栅双极晶体管
公开(公告)号：US20110186965A1
公开(公告)日：2011-08-04
申请号：US13015229
申请日：2011-01-27
申请人： Michio NEMOTO , Souichi YOSHIDA
发明人： Michio NEMOTO , Souichi YOSHIDA
IPC分类号： H01L29/739
CPC分类号： H01L29/739
摘要： Reverse-conducting insulated gate bipolar transistor in which IGBT region and FWD region are integrated into a single body in a semiconductor substrate with a common active region is disclosed. MOS gate structure is on a first major surface side. Rear surface side structure is in a second major surface side of the semiconductor substrate and includes a plurality of recessed parts vertical to the second major surface, which are repeated periodically along the second major surface. A plurality of protruding parts are interposed between the recessed parts. Rear surface side structure includes p type collector region on a bottom surface of the recessed part, n type first field stop region at a position deeper than the collector region, n type cathode region on the top surface of the protruding part, and n type second field stop region in the protruding part at a position deeper than the cathode region.
摘要翻译：公开了其中IGBT区域和FWD区域在具有公共有源区域的半导体衬底中集成到单个体中的反向导通绝缘栅双极晶体管。 MOS栅结构在第一主表面上。后表面侧结构位于半导体基板的第二主表面侧，并且包括与第二主表面垂直的多个凹部，其沿着第二主表面周期性重复。在凹部之间插入有多个突出部。后表面侧结构包括凹部的底面上的p型集电极区域，位于比集电极区域深的位置的n型第一场停止区域，突出部分的顶面上的n型阴极区域和n型第二区域位于比阴极区域更深的位置处的突出部中的场停止区域。

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