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1. 发明授权

US10651016B2 Detachable gas injector used for semiconductor equipment 有权
公开(公告)号：US10651016B2
公开(公告)日：2020-05-12
申请号：US15920127
申请日：2018-03-13
申请人： HERMES-EPITEK CORPORATION
发明人： Tsan-Hua Huang , Chia-Ying Lin
IPC分类号： C23C16/40 , H01J37/32 , C23C16/455
摘要： A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve receives a convex part of the top cover, thus forming a first transmission passage between the hollow sleeve and the convex part. The top housing has a center hole for accommodating the hollow sleeve, thus forming a second transmission passage between the hollow sleeve and the center hole. The gas output unit is connected to a bottom surface of the hollow sleeve. The gas output unit includes a first partition plate and a second partition plate, which form a first gas output layer, a second gas output layer and a third gas output layer.

2. 发明申请

US20150096496A1 VAPOR PHASE FILM DEPOSITION APPARATUS 审中-公开
标题翻译：蒸气相膜沉积装置
公开(公告)号：US20150096496A1
公开(公告)日：2015-04-09
申请号：US14502801
申请日：2014-09-30
申请人： HERMES-EPITEK CORPORATION
发明人： Noboru SUDA , Takahiro OISHI , Junji KOMENO , Po-Ching LU , Shih-Yung SHIEH , Bu-Chin CHUNG
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45508 , C23C16/303 , C23C16/45563 , C23C16/4584
摘要： A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.
摘要翻译：成膜装置同时实现挥发性成分的高分压，较高的流速和较低的气体消耗下的平滑沉积速率曲线。该装置包括盘状基座，与基座相对的面部构件，喷射器，材料气体导入部和排气部。晶片保持器保持基板，并且基座的支撑构件保持晶片保持器。基座围绕其中心轴线旋转，基板本身旋转。相对的面部构件被构造成使得扇形凹部和扇形凸起部分以径向方式交替地形成，由此流道的高度沿圆周方向变化。该设备提供与在最佳条件下通过常规装置在较小的载气流速下获得的膜沉积相当的膜沉积，并且增加挥发性组分的原料气体的分压。

3. 发明授权

US08719993B2 Semiconductor equipment 有权
标题翻译：半导体设备
公开(公告)号：US08719993B2
公开(公告)日：2014-05-13
申请号：US13856092
申请日：2013-04-03
申请人： Hermes-Epitek Corporation
发明人： Chien-Ping Huang , Tsan-Hua Huang , Tsung-Hsun Han
IPC分类号： H01L21/00 , B08B1/04
CPC分类号： H01L21/67005 , A46B13/00 , B08B7/00 , H01L21/67092
摘要： Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.
摘要翻译：提供半导体设备以包括反应室，可移动框架和至少一个清洁刷头。清洁刷头构造成在反应室内的至少一个待清洁的脏部分上操作。可动框架设置在反应室内。可移动框架能承载感受器。清洁刷头能够接触脏部分。清洁刷头能够相对于脏部移动，以除去附着在待清洁部分上的残留物。

4. 发明申请

US20230090558A1 PRE-WET SYSTEM HAVING PNEUMATIC CIRCULATION 有权
公开(公告)号：US20230090558A1
公开(公告)日：2023-03-23
申请号：US17946969
申请日：2022-09-16
申请人： HERMES-EPITEK CORPORATION
发明人： Jui-Hsiung Hsu , Chi-Yi Lin , Yu-Liang Huang , Jih-Jenn Huang
IPC分类号： B01D29/66 , B01D29/60 , B01D35/157 , B01D35/16 , B01D36/00
摘要： In some embodiments, a system for pre-wetting a filter includes a filter, a piping system, a first gas, a second gas, a first buffer tank, and a second buffer tank. The first gas drives the solvent to clean the filter. The two buffer tanks store the solvent discharged from the filter. The second gas selectively drives the solvent in the first buffer tank to return to the filter and then to be discharged into the second buffer tank. Alternatively, the second gas selectively drives the solvent in the second buffer tank to return to the filter and then to be discharged into the first buffer tank.

5. 发明申请

US20220301785A1 ANTIFERROELECTRIC CAPACITOR 有权
公开(公告)号：US20220301785A1
公开(公告)日：2022-09-22
申请号：US17583868
申请日：2022-01-25
申请人： HERMES-EPITEK CORPORATION , National Taiwan University
发明人： Miin-Jang Chen , Sheng-Han Yi , Jih-Jenn Huang
IPC分类号： H01G7/06
摘要： In this disclosure, antiferroelectric capacitors having one or more interfacial layer/antiferroelectric layer/interfacial layer stacked structures are proposed. The compressive chemical pressure of the proposed structure leads to a reduction of the hysteresis and thus a high ESD and a low energy loss. A provided antiferroelectric capacitor demonstrates a record-high ESD of 94 J/cm3 and a high efficiency of 80%, along with a high maximum power density of 5×1010 W/kg. The degradation of the energy storage performance as the film thickness increases is alleviated by the above multi-stacked structure, which presents a high ESD of 80 J/cm3 and efficiency of 82% with the thickness scaled up to 48 nm. This improvement is attributed to the enhancement of breakdown strength due to the barrier effect of interfaces on electrical treeing. Furthermore, the capacitors also exhibit an excellent endurance up to 1010 operation cycles.

6. 发明授权

US09551569B2 Apparatus and method for curvature and thin film stress measurement 有权
标题翻译：用于曲率和薄膜应力测量的装置和方法
公开(公告)号：US09551569B2
公开(公告)日：2017-01-24
申请号：US14513168
申请日：2014-10-13
申请人： HERMES-EPITEK CORPORATION
发明人： Chung-Yuan Wu , Robert Champetier , Chung-Hua Fu , Bu-Chin Chung
IPC分类号： G01B11/16 , G02B27/30 , G01B11/24
CPC分类号： G01B11/16 , G01B11/24 , G02B19/0014 , G02B19/0052 , G02B27/30
摘要： Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.
摘要翻译：公开了用于曲率和薄膜应力测量的装置和方法。该装置包括两个光源和一个检测器。来自两个光源的两个光束的角度不平行。两个光束被准直并投射到具有间距的样本上。检测器接收从样品反射的光束。通过检测器上的光束的点之间的距离或其中一个点的尺寸变化来计算样本的曲率。

7. 发明申请

US20140239091A1 Gas Injector and Cover Plate Assembly for Semiconductor Equipment 有权
标题翻译：用于半导体设备的气体注入器和盖板组件
公开(公告)号：US20140239091A1
公开(公告)日：2014-08-28
申请号：US14186429
申请日：2014-02-21
申请人： HERMES-EPITEK CORPORATION
发明人： Tsan-Hua Huang , Tsung-Hsun Han , Paul Wong , Miao-Chan Wu
IPC分类号： B05B15/02 , F28F3/12
CPC分类号： B05B15/50 , C23C16/4401 , C23C16/455 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： A gas injector and cover plate assembly includes a cover plate, a gas injector and a ceiling. The cover plate includes cooling fluid channels. The gas injector is configured to be located on the cover plate, and includes a gas distributor, a fluid-cooling gas transmitter, gas spraying plates and a conducting cone. The gas distributor distributes gases and a gas transmitter cooling fluid. The gas distributor includes a gas conduit for introducing a first gas. The fluid-cooling gas transmitter connects the gas distributor to introduce the gas transmitter cooling fluid to form cooling fluid walls and the first gas and the gases. The gas spraying plates and the conducting cone are located beneath the fluid-cooling gas transmitter.
摘要翻译：气体喷射器和盖板组件包括盖板，气体喷射器和天花板。盖板包括冷却流体通道。气体喷射器被配置为位于盖板上，并且包括气体分配器，流体冷却气体发射器，气体喷射板和导电锥体。气体分配器分配气体和气体变送器冷却流体。气体分配器包括用于引入第一气体的气体导管。流体冷却气体变送器连接气体分配器以引入气体变送器冷却流体以形成冷却流体壁和第一气体和气体。气体喷射板和导电锥体位于流体冷却气体发射器下方。

8. 发明申请

US20130277459A1 Showerhead 有权
公开(公告)号：US20130277459A1
公开(公告)日：2013-10-24
申请号：US13920744
申请日：2013-06-18
申请人： HERMES-EPITEK CORPORATION
发明人： Chien-Ping HUANG , Tsan-Hua Huang
IPC分类号： B05B1/18
CPC分类号： B05B1/185 , B23P15/16 , H01L21/46 , H01L21/465 , H01L21/4757 , Y10T29/49432 , Y10T29/49433
摘要： A showerhead is disclosed in this invention. The showerhead includes a bottom portion, at least one plate, and a top portion. The bottom portion includes a plurality of gas tubes which are integratedly formed on the bottom portion. The gas tubes include at least one first gas tube. The at least one plate includes a first plate. The first plate includes a plurality of first openings, wherein the gas tubes pass through the first openings. The top portion is coupled to the bottom portion for forming at least one inner space.

9. 发明申请

US20130220222A1 Gas Distribution Apparatus with Heat Exchanging Channels 审中-公开
标题翻译：具有热交换通道的气体分配装置
公开(公告)号：US20130220222A1
公开(公告)日：2013-08-29
申请号：US13403193
申请日：2012-02-23
申请人： Tsan-Hua Huang , Miao-Chan Wu
发明人： Tsan-Hua Huang , Miao-Chan Wu
IPC分类号： C23C16/455 , B05C11/00
CPC分类号： C23C16/45572 , C23C16/45565 , C23C16/45574
摘要： The invention provides a gas distribution apparatus comprising a main frame and a cover. The main frame includes a plurality of walls having a plurality of second gas channels therein, a plurality of first plenums defined by the walls, a plurality of heat exchange channels, a plurality of first gas channels under the first plenums, a plurality of heat exchange channel covers on the heat exchange channel, and a plurality of first plenum covers on the first plenums. Each first plenum and two adjacent walls defining the first plenum form a trunk with a plurality of branches extending from the trunk, and the branches of adjacent trunks are arranged in an interlaced manner. Each heat exchange channel is between two adjacent trunks. The cover on the main frame encloses a second plenum thereon.
摘要翻译：本发明提供了一种包括主框架和盖子的气体分配装置。主框架包括多个壁，其中具有多个第二气体通道，由壁限定的多个第一增压室，多个热交换通道，第一增压室下方的多个第一气体通道，多个热交换器热交换通道上的通道盖，以及在第一增压室上的多个第一增压罩。限定第一增压室的每个第一增压室和两个相邻壁形成具有从躯干延伸的多个分支的躯干，并且相邻树干的分支以交错方式布置。每个热交换通道在两个相邻的树干之间。主框架上的盖子在其上包围第二增压室。

10. 发明申请

US20110076401A1 Method of Making Showerhead for Semiconductor Processing Apparatus 有权
标题翻译：制造半导体加工装置的喷头的方法
公开(公告)号：US20110076401A1
公开(公告)日：2011-03-31
申请号：US12567676
申请日：2009-09-25
申请人： BEN-SON CHAO , YU-FENG CHANG , YEN-SI CHEN
发明人： BEN-SON CHAO , YU-FENG CHANG , YEN-SI CHEN
IPC分类号： C23C16/32 , C23C16/44 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/325 , C23C16/45565 , C23C16/56 , H01J37/32091 , H01J37/3244
摘要： A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands.
摘要翻译：公开了一种制造用于半导体处理装置的喷头的方法。在一个实施例中，该方法包括提供基底; 在基板上形成第一孔; 在基板上形成保护膜，其中保护膜覆盖第一孔的侧壁; 以及在所述基板中形成第二孔，其中所述第一孔内的所述保护膜的一部分被去除。在另一个实施例中，该方法包括提供衬底; 在基板上形成岛; 在基板上形成保护膜，其中保护膜不覆盖岛的顶部; 并在岛上形成孔。

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