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1. 发明授权

US09758630B2 Polymer substrate with hard coat layer and manufacturing method for such polymer substrate 有权
公开(公告)号：US09758630B2
公开(公告)日：2017-09-12
申请号：US15127035
申请日：2015-03-27
申请人： TEIJIN LIMITED , TSUKISHIMA KIKAI CO., LTD.
发明人： Tatsuichirou Kon , Tatsuya Ekinaka , Hiroshi Kishimoto , Yume Morita , Takehiro Suga , Satoshi Ogata , Masato Nakagomi
IPC分类号： C08J7/04 , C08J7/12 , B05D3/02 , C23C16/40 , C23C16/50 , C23C16/02
CPC分类号： C08J7/045 , B05D3/0254 , B05D7/02 , C08J7/047 , C08J7/123 , C08J2369/00 , C08J2433/08 , C08J2483/04 , C09D183/04 , C23C16/02 , C23C16/0254 , C23C16/0272 , C23C16/401 , C23C16/402 , C23C16/45565 , C23C16/45572 , C23C16/50 , C23C16/5096 , C23C16/56 , C23C18/122 , C23C18/1233 , C23C18/1254 , H01J37/32091 , C08K3/36
摘要： The present invention realizes a polymer substrate with hard coating layer comprising a high level of environmental resistance and a high level of abrasion resistance.A polymer substrate with hard coating layer is provided that comprises a polymer substrate (60) having a thickness of 1 mm to 20 mm and a hard coating layer (70,80) on the surface thereof. Here, in this polymer substrate with hard coating layer, the hard coating layer (70,80) is laminated on the surface of the polymer substrate, contains as a main component thereof a hydrolysis-condensation product of an organic silicon compound, has a thickness of 0.1 μm to 20 μm, makes direct contact with a cured underlayer on the opposite side of the polymer substrate, is formed from an organic silicon compound by PE-CVD, and satisfies all of the following requirements (a) to (c): (a) film thickness of the silicon oxide layer is within the range of 3.5 μm to 9.0 μm, (b) maximum indentation depth of the surface of the silicon oxide layer as determined by measuring nanoindentation under conditions of a maximum load of 1 mN is 150 nm or less, and (c) the value of critical compression ratio K of the silicon oxide layer, as defined by formula (1) in a 3-point bending test of the polymer substrate with hard coating layer that imparts indentation displacement in which the surface laminated with the silicon oxide layer becomes concave, is 0.975 or less.

2. 发明申请

US20170107345A1 POLYMER SUBSTRATE WITH HARD COAT LAYER AND MANUFACTURING METHOD FOR SUCH POLYMER SUBSTRATE 有权
公开(公告)号：US20170107345A1
公开(公告)日：2017-04-20
申请号：US15127035
申请日：2015-03-27
申请人： TEIJIN LIMITED , TSUKISHIMA KIKAI CO., LTD.
发明人： Tatsuichirou KON , Tatsuya EKINAKA , Hiroshi KISHIMOTO , Yume MORITA , Takehiro SUGA , Satoshi OGATA , Masato NAKAGOMI
IPC分类号： C08J7/04 , C23C16/02 , C23C16/40 , C23C16/50 , C08J7/12 , B05D3/02
CPC分类号： C08J7/045 , B05D3/0254 , B05D7/02 , C08J7/047 , C08J7/123 , C08J2369/00 , C08J2433/08 , C08J2483/04 , C09D183/04 , C23C16/02 , C23C16/0254 , C23C16/0272 , C23C16/401 , C23C16/402 , C23C16/45565 , C23C16/45572 , C23C16/50 , C23C16/5096 , C23C16/56 , C23C18/122 , C23C18/1233 , C23C18/1254 , H01J37/32091 , C08K3/36
摘要： The present invention realizes a polymer substrate with hard coating layer comprising a high level of environmental resistance and a high level of abrasion resistance.A polymer substrate with hard coating layer is provided that comprises a polymer substrate (60) having a thickness of 1 mm to 20 mm and a hard coating layer (70,80) on the surface thereof. Here, in this polymer substrate with hard coating layer, the hard coating layer (70,80) is laminated on the surface of the polymer substrate, contains as a main component thereof a hydrolysis-condensation product of an organic silicon compound, has a thickness of 0.1 μm to 20 μm, makes direct contact with a cured underlayer on the opposite side of the polymer substrate, is formed from an organic silicon compound by PE-CVD, and satisfies all of the following requirements (a) to (c): (a) film thickness of the silicon oxide layer is within the range of 3.5 μm to 9.0 μm, (b) maximum indentation depth of the surface of the silicon oxide layer as determined by measuring nanoindentation under conditions of a maximum load of 1 mN is 150 nm or less, and (c) the value of critical compression ratio K of the silicon oxide layer, as defined by formula (1) in a 3-point bending test of the polymer substrate with hard coating layer that imparts indentation displacement in which the surface laminated with the silicon oxide layer becomes concave, is 0.975 or less.

3. 发明申请

US20170009344A1 TEMPERATURE CONTROLLED SHOWERHEAD 审中-公开
标题翻译：温度控制淋浴
公开(公告)号：US20170009344A1
公开(公告)日：2017-01-12
申请号：US15275060
申请日：2016-09-23
申请人： Novellus Systems, Inc.
发明人： Henner W. Meinhold , Dan M. Doble , Stephen Yu-Hong Lau , Vince Wilson , Easwar Srinivasan
IPC分类号： C23C16/455
CPC分类号： C23C16/45572 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/5096 , H01J37/3244 , H01J37/32724
摘要： A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.
摘要翻译：用于化学气相沉积（CVD）室的温度控制喷头增强了散热，从而能够使用电加热器进行精确的温度控制。散热通过喷头杆和流体通道的传导以及来自背板的辐射而消散。温度控制系统包括在CVD室中具有串联连接到热交换器的流体通道的一个或多个温度控制的喷头。

4. 发明授权

US09499905B2 Methods and apparatus for the deposition of materials on a substrate 有权
标题翻译：用于在基材上沉积材料的方法和装置
公开(公告)号：US09499905B2
公开(公告)日：2016-11-22
申请号：US13547487
申请日：2012-07-12
申请人： Mehmet Tugrul Samir , Nyi Oo Myo
发明人： Mehmet Tugrul Samir , Nyi Oo Myo
IPC分类号： C23C16/455
CPC分类号： C23C16/45504 , C23C16/45563 , C23C16/45565 , C23C16/45568 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558
摘要： Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber.
摘要翻译：本文提供了在基板上沉积材料的方法和装置。在一些实施例中，装置可以包括具有基板支撑件的处理室; 用于向衬底支撑件提供热能的加热系统; 气体入口，设置在所述衬底支撑件的第一侧上，以提供穿过所述衬底的处理表面的第一工艺气体或第二工艺气体中的至少一种; 第一气体分配导管，设置在所述衬底支撑件上方，并且具有沿着所述第一气体分配导管的长度设置的一个或多个第一出口，以向所述衬底的所述处理表面提供第三工艺气体，其中所述一个或多个第一出口基本上线性排列; 以及设置在与气体入口相对的衬底支撑件的第二侧上以排出来自处理室的处理气体的排气歧管。

5. 发明授权

US09476121B2 Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof 有权
标题翻译：具有调节喷射反应气体速度的喷头的化学气相沉积装置及其方法
公开(公告)号：US09476121B2
公开(公告)日：2016-10-25
申请号：US14489730
申请日：2014-09-18
申请人： PIEZONICS CO., LTD. , Korea Institute of Industrial Technology
发明人： Chul Soo Byun , Man Cheol Han
IPC分类号： C23C16/455 , C23C16/40 , H01L21/67
CPC分类号： C23C16/45565 , C23C16/40 , C23C16/45514 , C23C16/45572 , C23C16/45574 , C23C16/45578 , H01L21/67069
摘要： A showerhead for chemical vapor deposition includes: a plurality of reactive gas showerhead modules separated each other and having the same number as the number of kinds of reactive gases injected from the showerhead, each having a mixing zone in the reactive gas showerhead module to induce a mixing of a reactive gas and an injection support gas used to regulate the injection velocity of the reactive gas and a plurality of reactive gas injection tubes connected to the bottom surface of the reactive gas showerhead module for injecting the reactive gas mixed with the injection support gas over the substrate; and a purge gas showerhead module mounted under the reactive gas showerhead modules, with a purge gas supply port for supplying a purge gas to the purge gas showerhead module.
摘要翻译：用于化学气相沉积的喷头包括：多个反应性气体喷头模块，其彼此分离并且具有与从喷头喷射的反应气体的种类的数量相同的数量，每个反应气体喷头模块在反应性气体喷头模块中具有混合区域以诱导用于调节反应性气体的喷射速度的反应气体和注入支撑气体的混合以及连接到反应性气体喷头模块的底表面的多个反应气体注入管，用于注入与喷射支持气体混合的反应气体在基材上; 以及安装在反应性气体喷头模块下方的吹扫气喷头模块，其具有用于向吹扫气喷头模块供应净化气体的吹扫气体供给口。

6. 发明申请

US20160273109A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体制造装置及制造半导体器件的方法
公开(公告)号：US20160273109A1
公开(公告)日：2016-09-22
申请号：US14840734
申请日：2015-08-31
申请人： Kabushiki Kaisha Toshiba
发明人： Yoshiyuki Harada , Kotaro Zaima , Hidenori Hanyu , Takashi Kataoka
IPC分类号： C23C16/455 , H01L21/02
CPC分类号： C23C16/45572 , C23C16/303 , C23C16/45565 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： According to one embodiment, a semiconductor manufacturing apparatus includes a cover part, a gas introduction part provided in the cover part, and a shower plate. The shower plate includes a space, a bottom part, and an outer frame part, the space being provided by jointing the shower plate with the cover part, the space being capable of containing a gas introduced from the gas introduction part, the outer frame part surrounding the bottom part, the bottom part including a plurality of ejection ports to eject the gas, a first cooling path being disposed between the ejection ports and the cover part in a center part of the bottom part, and a second cooling path disposed between the ejection ports and the cover part in an outer peripheral part of the bottom part surrounding the center part, the second cooling path being not connected with the first cooling path
摘要翻译：根据一个实施例，半导体制造装置包括盖部，设置在盖部中的气体导入部和喷淋板。淋浴板包括空间，底部和外框架部分，该空间通过将喷淋板与盖部接合而设置，该空间能够容纳从气体导入部引入的气体，外框部围绕底部，底部包括多个喷射口以排出气体，第一冷却通道设置在喷射口和位于底部的中心部分的盖部之间，第二冷却通道设置在第二冷却通道所述第一冷却路径与所述第一冷却路径连接，所述第二冷却路径与所述第一冷却路径

7. 发明授权

US09315897B2 Showerhead for film depositing vacuum equipment 有权
标题翻译：用于薄膜沉积真空设备的喷头
公开(公告)号：US09315897B2
公开(公告)日：2016-04-19
申请号：US13375434
申请日：2010-05-13
申请人： Chulsoo Byun , Man Cheol Han , Il Yong Chung , Seok Woo Lee
发明人： Chulsoo Byun , Man Cheol Han , Il Yong Chung , Seok Woo Lee
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C23C16/45591
摘要： A showerhead for film-depositing vacuum equipment having an effect shortening the length of injection tubes for a reactive gas is presented. The injection tubes extend from the bottom of a reactive gas showerhead module, and two different kinds of reactive gases are mixed with an injection support gas within a reactive showerhead module so as to inject the mixed gas. The showerhead for film-depositing vacuum equipment includes the reactive gas showerhead module above a cooling jacket and a purge gas showerhead module above the reactive gas showerhead module. The injection tubes of the reactive gas showerhead module pass through the cooling jacket disposed below the reactive gas showerhead module, and the injection tubes of the purge gas showerhead module pass through the reactive gas showerhead module disposed below the purge gas showerhead module, thereby enabling the purge gas to flow into a purge gas redistribution space defined above the cooling jacket.
摘要翻译：提出了一种用于成膜真空设备的喷头，其具有缩短反应气体的注射管的长度的效果。注射管从反应性气体喷头模块的底部延伸，并且两种不同种类的反应气体与反应性喷头模块内的注射支撑气体混合，以便注入混合气体。用于成膜真空设备的喷头包括在冷却套上方的反应性气体喷头模块和在反应性气体喷头模块上方的吹扫气喷头模块。反应性气体喷头模块的注射管通过设置在反应性气体喷头模块下方的冷却套管，并且吹扫气体喷头模块的注射管通过布置在吹扫气喷头模块下方的反应性气体喷头模块，吹扫气体流入冷却套管上方定义的净化气体再分布空间。

8. 发明授权

US09267205B1 Fastener system for supporting a liner plate in a gas showerhead reactor 有权
标题翻译：用于在气体喷头反应器中支撑衬板的紧固件系统
公开(公告)号：US09267205B1
公开(公告)日：2016-02-23
申请号：US13483779
申请日：2012-05-30
申请人： David Ishikawa , Abril Cabreros , Brian Burrows
发明人： David Ishikawa , Abril Cabreros , Brian Burrows
IPC分类号： C23C16/455 , C23C16/18
CPC分类号： C23C16/45572 , C23C16/18 , C23C16/45563 , C23C16/45565
摘要： A fastener system and method for supporting and retaining modular insulating quartz liners with gas apertures in close proximity to corresponding apertures in diffusers of gas showerheads. Tubular fasteners have a head, a tubular shank and a foot that extend through a liner plate nozzle into a diffuser plate. A keyway in the gas diffuser, aligned and coaxial with a diffuser nozzle, allows the foot to reach an arcuate concourse through a keyway where it can be locked by bayonet turning. The keyway is machined into the diffuser by EDM and is an inversion of the fastener tip geometry rotated about the axis of the tubular shank. Each fastener and nozzle set form a coaxial path for distributing processing gas to substrates through liner and diffuser plates from a plenum in showerheads of a MOCVD reactor.
摘要翻译：一种紧固件系统和方法，用于支撑和保持具有气孔的模块化绝缘石英衬垫，其紧邻气体喷头的扩散器中的相应孔。管状紧固件具有头部，管状柄和脚，其延伸穿过衬板喷嘴进入扩散板。与扩散喷嘴对准并同轴的气体扩散器中的键槽允许脚通过键槽到达弧形大厅，在该位置处可通过卡口旋转锁定。键槽通过EDM加工成扩散器，并且是围绕管状柄的轴线旋转的紧固件尖端几何形状的反转。每个紧固件和喷嘴组形成同轴路径，用于通过衬套和扩散板将处理气体分配到MOCVD反应器的喷头中的增压室。

9. 发明授权

US09068265B2 Gas distribution plate with discrete protective elements 有权
标题翻译：气体分布板带有离散的保护元件
公开(公告)号：US09068265B2
公开(公告)日：2015-06-30
申请号：US13363342
申请日：2012-01-31
申请人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
发明人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
IPC分类号： B05B5/00 , B05B1/14 , C23C16/509 , C23C16/455 , H01J37/32
CPC分类号： C23C16/5096 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/32091 , H01J37/3244 , H01J37/32559
摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.
摘要翻译：本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

10. 发明授权

US09034142B2 Temperature controlled showerhead for high temperature operations 有权
标题翻译：温控淋浴头，用于高温操作
公开(公告)号：US09034142B2
公开(公告)日：2015-05-19
申请号：US12642497
申请日：2009-12-18
申请人： Christopher M. Bartlett , Ming Li , Jon Henri , Marshall R. Stowell , Mohammed Sabri
发明人： Christopher M. Bartlett , Ming Li , Jon Henri , Marshall R. Stowell , Mohammed Sabri
IPC分类号： C23C16/52 , H01L21/306 , C23C16/455 , C23C16/44
CPC分类号： C23C16/52 , C23C16/4401 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/458 , C23C16/46
摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.
摘要翻译：用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。热量由插入淋浴头蒸汽的加热元件提供。使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

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