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1. 发明申请

US20180033659A1 GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL 审中-公开
公开(公告)号：US20180033659A1
公开(公告)日：2018-02-01
申请号：US15414326
申请日：2017-01-24
申请人： Applied Materials, Inc.
发明人： Chun YAN , Xinyu BAO
IPC分类号： H01L21/67 , B08B15/00 , C30B33/00 , C30B25/12 , C30B25/08 , C30B25/14
CPC分类号： H01L21/67201 , B08B15/00 , B08B15/02 , B08B2215/003 , C23C16/45508 , C23C16/4551 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/4558 , C30B25/08 , C30B25/12 , C30B25/14 , C30B33/00 , H01L21/67017
摘要： Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to a substrate in a load lock chamber, and subsequently a non-reactive gas is flowed to the substrate in the load lock chamber. As such, hazardous gases and outgassing residuals are decreased and/or removed from the substrate such that further processing may be performed.

2. 发明授权

US09837265B2 Gas flow profile modulated control of overlay in plasma CVD films 有权
公开(公告)号：US09837265B2
公开(公告)日：2017-12-05
申请号：US15192732
申请日：2016-06-24
申请人： Applied Materials, Inc.
发明人： Prashant Kumar Kulshreshtha , Sudha Rathi , Praket P. Jha , Saptarshi Basu , Kwangduk Douglas Lee , Martin J. Seamons , Bok Hoen Kim , Ganesh Balasubramanian , Ziqing Duan , Lei Jing , Mandar B. Pandit
IPC分类号： H01L21/02 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/033 , H01L21/66 , C23C16/26 , C23C16/04 , H01L21/311
CPC分类号： H01L21/02274 , C23C16/04 , C23C16/26 , C23C16/455 , C23C16/45502 , C23C16/45508 , C23C16/45565 , C23C16/458 , C23C16/4584 , C23C16/4586 , C23C16/46 , H01L21/02115 , H01L21/0337 , H01L21/31144 , H01L22/12
摘要： Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

3. 发明申请

US20170314131A1 GAS DISTRIBUTING INJECTOR APPLIED IN MOCVD REACTOR 审中-公开
公开(公告)号：US20170314131A1
公开(公告)日：2017-11-02
申请号：US15467987
申请日：2017-03-23
申请人： HERMES-EPITEK CORPORATION
发明人： Po-Jung Lin , Che-Lin Chen , Chang-Da Tsai , Bu-Chin Chung
IPC分类号： C23C16/455 , C23C16/18
CPC分类号： C23C16/45576 , C23C16/18 , C23C16/45508 , C23C16/45574
摘要： The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels. The first gas channels, the second gas channels, and the third gas channels are radially distributed on the same plane in the disk-shaped body. Different gases are distributed or fed into different gas channels (such as the first gas channels, the second gas channels, and the third gas channels) and transported by different gas channels. Through different gas channels, different gases are transversely injected into the MOCVD reactor on the same plane respectively. Therefore, the gas distributing injector of this invention can distribute different gases by a single-layered structure.

4. 发明申请

US20160362813A1 INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH 审中-公开
标题翻译：注射器半导体外延增长
公开(公告)号：US20160362813A1
公开(公告)日：2016-12-15
申请号：US15156371
申请日：2016-05-17
申请人： Applied Materials, Inc.
发明人： Xinyu BAO , Shu-Kwan LAU , Errol Antonio C. SANCHEZ
IPC分类号： C30B25/14 , C30B25/10 , H01L21/02 , C30B29/16 , C30B29/48 , C23C16/455 , C30B29/40
CPC分类号： C30B25/14 , C23C16/45508 , C23C16/45574 , C30B25/105 , C30B29/06 , C30B29/08 , C30B29/16 , C30B29/40 , C30B29/48 , H01L21/02532 , H01L21/02538 , H01L21/02551 , H01L21/0262 , H01L21/02636
摘要： A processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a substrate support having a substrate supporting surface, an energy source coupled to the top or the bottom, and a gas injector liner disposed at the sidewall. The gas injector liner comprises a first plurality of gas outlets disposed at a first height, wherein one or more of the first plurality of gas outlets are oriented upwardly or downwardly, a second plurality of gas outlets disposed at a second height shorter than the first height, wherein one or more of the second plurality of gas outlets are oriented upwardly or downwardly, and a third plurality of gas outlets disposed at a third height shorter than the second height, wherein one or more of the third plurality of gas outlets are oriented upwardly or downwardly with respect to the substrate supporting surface.
摘要翻译：一种具有顶部，底部和侧壁的处理室，其联接在一起以限定外壳，具有基板支撑表面的基板支撑件，联接到顶部或底部的能量源以及设置在侧壁处的气体注入器衬套。气体注入器衬套包括设置在第一高度处的第一多个气体出口，其中第一多个气体出口中的一个或多个朝上或向下取向;第二多个气体出口，其设置在比第一高度短的第二高度处，其中所述第二多个气体出口中的一个或多个向上或向下取向，以及设置在比所述第二高度短的第三高度处的第三多个气体出口，其中所述第三多个气体出口中的一个或多个朝向上或相对于基板支撑表面向下。

5. 发明授权

US09512518B2 Apparatus for treating a gas stream 有权
标题翻译：用于处理气流的装置
公开(公告)号：US09512518B2
公开(公告)日：2016-12-06
申请号：US14239017
申请日：2012-07-11
申请人： Sergey Alexandrovich Voronin , Christopher James Philip Clements , John Leslie Bidder , Joanne Walsh
发明人： Sergey Alexandrovich Voronin , Christopher James Philip Clements , John Leslie Bidder
IPC分类号： C23C16/455 , B01D53/32 , B03C3/78 , B03C3/82 , H05H1/34 , C23C16/44 , C23C16/513
CPC分类号： C23C16/45508 , B01D53/32 , B01D2252/103 , B01D2257/106 , B01D2257/2027 , B01D2257/2047 , B01D2257/402 , B01D2257/406 , B01D2257/553 , B01D2258/0216 , B01D2259/818 , B03C3/78 , B03C3/82 , C23C16/4404 , C23C16/45563 , C23C16/513 , H05H1/341 , Y02C20/10
摘要： An apparatus for treating a gas stream. A plasma generator generates a plasma flare. A first inlet conveys the gas stream into the apparatus. A reaction chamber is located downstream of the plasma generator in which gas is treated. A second inlet receives a liquid into the apparatus for establishing a liquid weir over an interior surface of the reaction chamber for resisting accumulation of solid deposits on the interior surface. A weir guide has an outer annular surface for directing liquid over the interior surface and an inner annular surface in flow communication with the outer surface so that liquid flows form the outer surface to the inner surface to resist depositing on the inner surface.
摘要翻译：一种用于处理气流的装置。等离子体发生器产生等离子体火炬。第一入口将气流输送到设备中。反应室位于处理气体的等离子体发生器的下游。第二入口将液体接收到装置中，用于在反应室的内表面上建立液体堰，以阻止固体沉积物在内表面上的积聚。堰引导件具有用于将液体引导到内表面上的外环形表面和与外表面流动连通的内环形表面，使得液流从外表面流到内表面以抵抗沉积在内表面上。

6. 发明申请

US20160312381A1 APPARATUS FOR PRODUCING SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SIC EPITAXIAL WAFER 审中-公开
标题翻译：用于生产SIC外延波形的装置及生产SIC外延波形的方法
公开(公告)号：US20160312381A1
公开(公告)日：2016-10-27
申请号：US15102314
申请日：2014-10-30
申请人： SHOWA DENKO K.K.
发明人： Jun NORIMATSU , Akira MIYASAKA , Yoshiaki KAGESHIMA
IPC分类号： C30B25/12 , C30B25/14 , C30B29/36 , H01L21/687 , C23C16/455 , C23C16/458 , H01L21/02 , C30B25/20 , C23C16/32
CPC分类号： C30B25/12 , C23C16/325 , C23C16/45508 , C23C16/4584 , C30B25/14 , C30B25/165 , C30B25/20 , C30B29/36 , C30B31/14 , H01L21/02378 , H01L21/02529 , H01L21/0262 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.
摘要翻译：根据本发明的SiC外延晶片生产设备包括具有凹入容纳部分的安装板，设置在凹入容纳部分中并具有其上放置有SiC衬底的上表面的卫星，以及位于设置在比SiC基板低的位置并且不与SiC基板接触的凹入容纳部。

7. 发明申请

US20160307752A1 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS 有权
公开(公告)号：US20160307752A1
公开(公告)日：2016-10-20
申请号：US15192732
申请日：2016-06-24
申请人： Applied Materials, Inc.
发明人： Prashant Kumar KULSHRESHTHA , Sudha RATHI , Praket P. JHA , Saptarshi BASU , Kwangduk Douglas LEE , Martin J. SEAMONS , Bok Hoen KIM , Ganesh BALASUBRAMANIAN , Ziqing DUAN , Lei JING , Mandar B. PANDIT
IPC分类号： H01L21/02 , H01L21/033 , C23C16/04 , C23C16/458 , C23C16/46 , H01L21/66 , C23C16/455
CPC分类号： H01L21/02274 , C23C16/04 , C23C16/26 , C23C16/455 , C23C16/45502 , C23C16/45508 , C23C16/45565 , C23C16/458 , C23C16/4584 , C23C16/4586 , C23C16/46 , H01L21/02115 , H01L21/0337 , H01L21/31144 , H01L22/12
摘要： Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater.

8. 发明授权

US09464353B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09464353B2
公开(公告)日：2016-10-11
申请号：US14086959
申请日：2013-11-21
申请人： WONIK IPS CO., LTD.
发明人： Young Hoon Park , Dong Ho Ryu , Won Jun Yoon
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45508 , C23C16/45519 , C23C16/45548 , C23C16/45551
摘要： The present invention relates to a substrate processing apparatus: including a chamber comprising a body having an inner space and a top lid provided on an upper part of the body, the top lid having at least one gas input port; a substrate supporting unit rotatably installed inside the chamber to support a plurality of substrates; and a gas injection device comprising a central injection unit provided on an upper part of the substrate supporting unit to inject a gas into a central region of the substrate supporting unit, a source gas injection unit provided around the central injection unit to inject a source gas into the substrate supporting unit, a reaction gas injection unit provided around the central injection unit to inject a reaction gas into the substrate supporting unit and a purge gas injection unit disposed between the source gas injection unit and the reaction gas injection unit; wherein at least one of the source gas injection unit and the reaction gas injection unit comprises a main injection unit to inject a gas into the substrate supporting unit and a gas-injecting projection projecting in a intersectional direction to the main injection unit between the central injection unit and the main injection unit, the main injection unit and the projection are divided into a plurality of regions along a circumference, and the main injection unit or the projection in at least one region inject an amount of gas different than those of the other regions. The substrate processing apparatus according to the present invention can enhance uniformity and reliability of a thin film.
摘要翻译：衬底处理装置技术领域本发明涉及一种基板处理装置，包括：室，包括具有内部空间的主体和设置在主体上部的顶盖，顶盖具有至少一个气体输入口; 基板支撑单元，其可旋转地安装在所述室内以支撑多个基板; 以及气体注入装置，其包括设置在所述基板支撑单元的上部的中心注入单元，以将气体注入到所述基板支撑单元的中心区域中;源气体注入单元，设置在所述中央注入单元周围以将源气体设置在所述基板支撑单元的周围的反应气体注入单元，所述反应气体注入单元设置在所述中央注入单元周围，以将反应气体注入到所述基板支撑单元中;以及净化气体注入单元，其设置在所述源气体注入单元和所述反应气体注入单其中，所述源气体注入单元和所述反应气体注入单元中的至少一个包括将气体注入到所述基板支撑单元中的主注入单元和在所述中央注入口之间沿与所述主注入单元相交的方向突出的气体注入单元和主喷射单元，主喷射单元和突起沿圆周分成多个区域，并且主喷射单元或至少一个区域中的突起喷射与其它区域不同的气体量。根据本发明的基板处理装置可以提高薄膜的均匀性和可靠性。

9. 发明申请

US20160289834A1 SUBSTRATE PROCESSING DEVICE 审中-公开
标题翻译：基板处理装置
公开(公告)号：US20160289834A1
公开(公告)日：2016-10-06
申请号：US15038678
申请日：2014-12-10
申请人： EUGENE TECHNOLOGY CO., LTD.
发明人： Sung-Tae JE , Jae-Ho LEE , Sang-Ho CHOI , Seung-Hyun YOON
IPC分类号： C23C16/46 , H01L21/677 , H01L21/687
CPC分类号： C23C16/46 , C23C16/4412 , C23C16/45508 , C23C16/45565 , C23C16/52 , C23C16/54 , H01L21/6719 , H01L21/67709 , H01L21/68785
摘要： Provided is an apparatus for processing a substrate. The apparatus includes a chamber providing an inner space in which a process with respect to the substrate is performed, a susceptor disposed in the inner space and on which the substrate is placed, a fixing plate disposed in an exhaust port disposed in a sidewall of the chamber along a circumference of the susceptor, the fixing plate having a plurality of through-holes, and at least one sliding plate disposed on an upper or lower portion of the fixing plate to rotate with respect to a center of the susceptor, the at least one sliding plate selectively opening and closing the through-holes.
摘要翻译：提供了一种用于处理基板的装置。该装置包括一个提供内部空间的室，在该内部空间中进行相对于基板的处理，设置在内部空间中并且其上放置基板的基座，设置在排出口中的固定板，所述固定板具有多个通孔，以及设置在所述固定板的上部或下部的至少一个滑板，以相对于所述基座的中心旋转，至少一个滑动板选择性地打开和关闭通孔。

10. 发明申请

US20160237567A1 ATOMIC-LAYER DEPOSITION APPARATUS USING COMPOUND GAS JET 有权
标题翻译：使用复合气体射流的原子沉积沉积装置
公开(公告)号：US20160237567A1
公开(公告)日：2016-08-18
申请号：US14621426
申请日：2015-02-13
申请人： Eastman Kodak Company
发明人： Kurt D. Sieber , Kam Chuen Ng , Ronald Steven Cok
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/4412 , C23C16/453 , C23C16/45508 , C23C16/458 , C23C16/4583
摘要： An apparatus for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes a chamber having an atmosphere and a moveable substrate. A stationary support is located in the chamber that supports the moveable substrate. A pressurized-fluid source provides a compound fluid flow including an inert fluid surrounding a reactive fluid that flows simultaneously through the stationary support and impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.
摘要翻译：使用大气压原子层沉积在基板上沉积薄膜的装置包括具有气氛的室和可移动基板。固定支撑件位于腔室中，其支撑可移动衬底。加压流体源提供复合流体流动，其包括围绕反应流体的惰性流体，所述惰性流体同时流过固定支撑件并且撞击在可移动基底的至少一部分上以流动地悬浮可移动基底并将可移动基底暴露于化合物流体流动以在可移动基底上沉积薄膜。

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