专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09496132B2 Nucleation of III-N on REO templates 有权
标题翻译： III-N在REO模板上的成核
公开(公告)号：US09496132B2
公开(公告)日：2016-11-15
申请号：US13845426
申请日：2013-03-18
申请人： TRANSLUCENT, INC.
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/02192 , H01L21/02247 , H01L21/02252 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
摘要翻译：在硅衬底上制造单晶III-N材料层的方法包括在硅衬底上外延生长REO模板。该模板包括与衬底相邻的REO层，晶体间距基本上与衬底的晶格间距相匹配，并被选择以保护衬底免受氮化。在模板的上表面附近形成稀土氮氧化物或稀土氮化物，并且在其上外延生长单晶III-N材料层。

2. 发明授权

US09443939B2 Strain compensated REO buffer for III-N on silicon 有权
标题翻译：用于硅上III-N的应变补偿REO缓冲器
公开(公告)号：US09443939B2
公开(公告)日：2016-09-13
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

3. 发明授权

US09142406B1 III-N material grown on ErAlN buffer on Si substrate 有权
标题翻译：在Si衬底上在ErAlN缓冲液上生长的III-N材料
公开(公告)号：US09142406B1
公开(公告)日：2015-09-22
申请号：US14269011
申请日：2014-05-02
申请人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
IPC分类号： H01L21/20 , H01L21/02 , H01L29/20 , H01L29/205
CPC分类号： H01L21/0251 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/0254
摘要： III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
摘要翻译：在包括单晶硅或单晶蓝宝石中的一种的衬底上的缓冲器上生长的III-N材料。包括ErxAl1-xN或（RE1yRE21-y）xAl1-xN中的一种的单晶合金缓冲液位于基板上。一层单晶III-N材料位于缓冲层的表面上，单晶合金具有与单晶III-N材料层基本晶格匹配的晶格常数。当III-N材料为GaN时，合金配方中的x从衬底附近的小于1变化到大于或等于与单晶GaN层相邻的0.249。

4. 发明授权

US08636844B1 Oxygen engineered single-crystal REO template 有权
标题翻译：氧气工程单晶REO模板
公开(公告)号：US08636844B1
公开(公告)日：2014-01-28
申请号：US13543093
申请日：2012-07-06
申请人： Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： C30B25/00
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/02502 , H01L21/02521
摘要： A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure.
摘要翻译：在硅衬底上形成模板的方法包括在硅衬底上外延生长单晶三元稀土氧化物的模板，并在模板上外延生长单晶半导体活性层。有源层具有立方晶体或六方晶体结构。在模板的外延生长期间，选择氧的分压，并且选择包含在三元稀土氧化物中的金属的比例以在与衬底的较低界面处的模板的晶体间距和结构相匹配并且匹配晶体间距以及在半导体活性层的晶体间距和结构的上界面处的模板的结构。模板生长期间的高氧分压产生稳定的立方晶体结构，低氧分压产生具有六方晶系结构的主峰。

5. 发明授权

US08455881B2 Ge quantum dots for dislocation engineering of III-N on silicon 有权
标题翻译： Ge量子点用于硅片上III-N的位错工程
公开(公告)号：US08455881B2
公开(公告)日：2013-06-04
申请号：US13235544
申请日：2011-09-19
申请人： Erdem Arkun , Andrew Clark
发明人： Erdem Arkun , Andrew Clark
IPC分类号： H01L29/15
CPC分类号： H01L21/02532 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02458 , H01L21/02513 , H01L21/0259 , H01L29/127 , H01L29/2003
摘要： A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N and a second layer of III-N is grown on the Ge clusters or quantum dots and any portions of the first layer of III-N exposed between the Ge clusters or quantum dots. Additional alternating Ge clusters or quantum dots and layers of III-N are grown on the second layer of III-N forming an upper surface of III-N. Generally, the additional alternating layers of Ge clusters or quantum dots and layers of III-N are continued until dislocations in the III-N adjacent the upper surface are substantially eliminated.
摘要翻译：虚拟衬底结构包括具有在硅衬底上生长的III-N的第一层的晶体硅衬底。 Ge簇或量子点在III-N的第一层上生长，并且在Ge簇或量子点上生长第二层III-N，并且在Ge簇或量子之间暴露的III-N的第一层的任何部分圆点附加的交替的Ge簇或III-N的量子点和层生长在形成III-N的上表面的III-N的第二层上。通常，Ge簇或III-N的量子点和层的附加交替层继续进行，直到基本上消除了与上表面相邻的III-N中的位错。

6. 发明授权

US08039738B2 Active rare earth tandem solar cell 有权
标题翻译：活性稀土串联太阳能电池
公开(公告)号：US08039738B2
公开(公告)日：2011-10-18
申请号：US12619637
申请日：2009-11-16
申请人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
发明人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
IPC分类号： H01L31/055 , H01L31/028
CPC分类号： H01L31/02322 , H01L31/056 , H01L31/0725 , H01L31/0745 , Y02E10/52
摘要： The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
摘要翻译：公开了使用稀土（RE和O，N，P）基材料在两种不同的半导体材料之间转变并实现入射辐射的上和/或下转换。基于稀土的氧化物，氮化物和磷化物提供了宽范围的晶格间距，使得能够与IV，III-V族和II-VI族化合物的压缩，拉伸或无应力晶格匹配。

7. 发明授权

US07928317B2 Thin film solar cell 有权
标题翻译：薄膜太阳能电池
公开(公告)号：US07928317B2
公开(公告)日：2011-04-19
申请号：US11788153
申请日：2007-04-18
申请人： Petar B. Atanackovic
发明人： Petar B. Atanackovic
IPC分类号： H01L31/00
CPC分类号： H01L31/06 , Y02E10/50
摘要： Optimal structures for high efficiency thin film silicon solar energy conversion devices and systems are disclosed. Thin film silicon active layer photoelectron conversion structures using ion implantation are disclosed. Thin film semiconductor devices optimized for exploiting the high energy and ultraviolet portion of the solar spectrum at the earths surface are also disclosed. Solar cell fabrication using high oxygen concentration single crystal silicon substrates formed using in preference the CZ method are used advantageously. Furthermore, the present invention discloses optical coatings for advantageous coupling of solar radiation into thin film solar cell devices via the use of rare-earth metal oxide (REOx), rare-earth metal oxynitride (REOxNy) and rare-earth metal oxy-phosphide (REOxPy) glasses and or crystalline material. The rare-earth metal is chosen from the group commonly known in the periodic table of elements as the lanthanide series.
摘要翻译：公开了用于高效薄膜硅太阳能转换装置和系统的最佳结构。公开了使用离子注入的薄膜硅有源层光电转换结构。还公开了为了利用地球表面的太阳光谱的高能量和紫外线部分而优化的薄膜半导体器件。有利地使用使用优选CZ法形成的高氧浓度单晶硅衬底的太阳能电池制造。此外，本发明公开了通过使用稀土金属氧化物（REOx），稀土金属氮氧化物（REOxNy）和稀土金属氧化磷（REOxNy）和稀土金属氧化物（REOxNy），将太阳辐射有效地耦合到薄膜太阳能电池器件中的光学涂层 REOxPy）玻璃和/或结晶材料。稀土金属选自周期表中众所周知的元素作为镧系元素。

8. 发明申请

US20110037048A1 Composition Comprising Rare-earth Dielectric 审中-公开
标题翻译：组成包括稀土电介质
公开(公告)号：US20110037048A1
公开(公告)日：2011-02-17
申请号：US12651419
申请日：2009-12-31
申请人： Petar Atanackovic
发明人： Petar Atanackovic
IPC分类号： H01L29/06
CPC分类号： H01L21/02192 , B82Y20/00 , C30B25/14 , C30B25/205 , C30B29/14 , C30B29/16 , C30B29/38 , C30B29/40 , G02B6/1225 , G02B6/125 , H01L21/022 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31645 , H01L27/15 , H01L29/26 , H01L29/51 , H01L33/34 , H01S3/0604 , H01S3/0627 , H01S3/1603 , H01S3/1628 , H01S5/0261 , H01S5/18341 , H01S5/18369 , H01S2301/173
摘要： Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated circuits and high-K buried dielectrics as part of a semiconductor-on-insulator wafer structure.
摘要翻译：包含设置在基板上的单相稀土类电介质的组合物。本发明的实施例为常规集成电路中的高K栅极电介质和作为绝缘体上半导体晶片结构的一部分的高K掩埋电介质提供了基础。

9. 发明申请

US20100122720A1 Passive Rare Earth Tandem Solar Cell 有权
标题翻译：被动稀土串联太阳能电池
公开(公告)号：US20100122720A1
公开(公告)日：2010-05-20
申请号：US12619549
申请日：2009-11-16
申请人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
发明人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
IPC分类号： H01L31/042
CPC分类号： H01L31/0687 , H01L31/055 , Y02E10/52 , Y02E10/544
摘要： The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
摘要翻译：公开了使用稀土（RE + O，N，P）基材料在两种半导体材料之间的转变。基于稀土的氧化物，氮化物和磷化物提供了宽范围的晶格间距，使得能够与IV族，III-V族和II-VI族化合物的压缩，拉伸或无应力晶格匹配。公开的实施例包括串联太阳能电池。

10. 发明授权

US07538016B2 Signal and/or ground planes with double buried insulator layers and fabrication process 有权
标题翻译：具有双埋层绝缘体层和制造工艺的信号和/或接地层
公开(公告)号：US07538016B2
公开(公告)日：2009-05-26
申请号：US11961938
申请日：2007-12-20
申请人： Petar B. Atanakovic , Michael Lebby
发明人： Petar B. Atanakovic , Michael Lebby
IPC分类号： H01L21/20 , H01L21/44 , H01L23/48
CPC分类号： H01L29/78603 , H01L21/28518 , H01L21/3105 , H01L21/743 , H01L23/535 , H01L29/66772 , H01L29/7842 , H01L29/78645 , H01L29/78654 , H01L2924/0002 , H01L2924/00
摘要： The present invention describes a method including the steps of providing a single crystal semiconductor substrate, forming a layer of rare earth silicide on a surface of the semiconductor substrate, forming a first layer of insulating material on the layer of rare earth silicide, forming a layer of electrically conductive material on the first layer of insulating material, and forming a second layer of insulating material on the layer of electrically conductive material. In one embodiment the step of forming the layer of rare earth silicide includes depositing a layer of rare earth metal on a surface of the semiconductor substrate depositing a layer of insulating material on the layer of rare earth metal, and annealing the structure to form a layer of rare earth silicide in conjunction with the surface of the semiconductor substrate and a rare earth doped insulating layer in conjunction with the layer of insulating material.
摘要翻译：本发明描述了一种方法，包括以下步骤：提供单晶半导体衬底，在半导体衬底的表面上形成稀土硅化物层，在稀土硅化物层上形成第一绝缘材料层，形成层的第一绝缘材料层上的导电材料，并且在导电材料层上形成第二层绝缘材料。在一个实施方案中，形成稀土硅化物层的步骤包括在半导体衬底的表面上沉积稀土金属层，在稀土金属层上沉积绝缘材料层，并退火该结构以形成层的稀土硅化物与半导体衬底的表面以及与绝缘材料层结合的稀土掺杂绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式