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    • 10. 发明授权
    • Substrate processing method and substrate processing system
    • 基板加工方法和基板处理系统
    • US09016231B2
    • 2015-04-28
    • US13956958
    • 2013-08-01
    • Tokyo Electron Limited
    • Yuichiro Inatomi
    • B05C11/02G03F7/40H01L21/027H01L21/67
    • B05C11/023G03F7/40H01L21/0273H01L21/67028H01L21/67051
    • A solvent vapor is made to adhere efficiently to the surface of a resist pattern without using an ultraviolet irradiation process to improve processing accuracy, to reduce processing time and to suppress the diffusion of the solvent outside a substrate processing system. The surface of a resist pattern R formed on a semiconductor wafer W by an exposure process and a developing process is coated with water molecules m. A solvent vapor of a water-soluble solvent, such as NMP, is spouted on the surface of the resist pattern R coated with the water molecules m. A surface layer of the resist pattern R is swollen by the solvent vapor combined with the water molecules m to achieve a smoothing process. The water molecules m and the solvent s remaining on the resist pattern R on the wafer W after the smoothing process are removed by drying.
    • 使溶剂蒸气有效地粘附到抗蚀剂图案的表面上,而不使用紫外线照射工艺来提高加工精度,减少加工时间并抑制溶剂扩散到基板处理系统外部。 通过曝光工艺和显影工艺在半导体晶片W上形成的抗蚀剂图案R的表面涂覆有水分子m。 水溶性溶剂如NMP的溶剂蒸气喷射在涂有水分子m的抗蚀剂图案R的表面上。 抗蚀剂图案R的表面层通过与水分子m结合的溶剂蒸气而溶胀以实现平滑处理。 通过干燥除去平滑处理后的水分子m和残留在晶片W上的抗蚀剂图案R上的溶剂。