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    • 5. 发明申请
    • ATMOSPHERIC-PRESSURE PLASMA PROCESSING APPARATUS AND METHOD
    • 大气压力等离子体处理装置和方法
    • US20140076861A1
    • 2014-03-20
    • US13826089
    • 2013-03-14
    • Carrie E. CorneliusGregory A. RocheDavid W. Tyner
    • Carrie E. CorneliusGregory A. RocheDavid W. Tyner
    • B23K10/00
    • D06B19/007B23K10/003D06B1/02D10B2401/021H05H1/46H05H2001/466H05H2240/10H05H2245/123
    • A plasma processing apparatus including powered electrodes having elongated planar surfaces; grounded electrodes having elongated planar surfaces parallel to and coextensive with the elongated surfaces of the powered electrodes, and spaced-apart a chosen distance therefrom, forming plasma regions, is described. RF power is provided to the at least one powered electrode, both powered and grounded electrodes may be cooled, and a plasma gas is flowed through the plasma regions at atmospheric pressure; whereby a plasma is formed in the plasma regions. The material to be processed may be moved into close proximity to the exit of the plasma gas from the plasma regions perpendicular to the gas flow, and perpendicular to the elongated electrode dimensions, whereby excited species generated in the plasma exit the plasma regions and impinge unimpeded onto the material.
    • 一种等离子体处理装置,包括具有细长平面的动力电极; 描述了具有与被动电极的细长表面平行并且共同延伸的细长平面的接地电极,并且与其间隔开一定距离,形成等离子体区域。 RF功率被提供给至少一个供电电极,电源和接地电极都可以被冷却,等离子体气体在大气压力下流过等离子体区域; 由此在等离子体区域中形成等离子体。 待处理的材料可以被移动到离垂直于气流的等离子体区域等离子体气体的出口附近,并且垂直于细长电极尺寸,由此在等离子体中产生的激发物质离开等离子体区域并且不受阻碍地撞击 在材料上。
    • 7. 发明申请
    • UNDERWATER MARKING WITH A PLASMA ARC TORCH
    • 水下标记与等离子弧焊
    • US20110062119A1
    • 2011-03-17
    • US12881608
    • 2010-09-14
    • Joseph V. Warren, JR.Roger W. Burrows
    • Joseph V. Warren, JR.Roger W. Burrows
    • B23K10/00
    • B23K10/003B23K9/0061B23K9/013B23K10/00H05H1/341H05H2001/3457
    • A method of marking underwater with a plasma arc torch is provided. The method includes surrounding a plasma arc produced by the plasma arc torch with a flow of gas. The flow of gas may be directed around and/or along the body of the plasma arc torch with an air curtain attachment. Directing the flow of gas in this manner generates a protective air curtain which substantially surrounds the plasma arc. A current between 8 and 35 amperes may be used to mark the workpiece. Thereafter, the workpiece may be cut using the same plasma arc torch with a current between 30 and 750 amperes. The same nozzle and rate of flow of gas may be used for both the marking and cutting operations. Additionally, the workpiece may be kept underwater throughout the marking and cutting operations.
    • 提供了一种用等离子体电弧焰炬标记水下的方法。 该方法包括利用气流围绕由等离子弧焊炬产生的等离子弧。 气体流可以用等离子体电弧焰炬的身体围绕和/或沿空气幕附件定向。 以这种方式引导气流产生基本上围绕等离子弧的保护性气帘。 可以使用8到35安培之间的电流来标记工件。 此后,可以使用相同的等离子弧焊炬切割工件,其电流为30至750安培。 气体的相同喷嘴和流速可用于标记和切割操作。 此外,工件可以在整个标记和切割操作期间保持在水下。
    • 10. 发明授权
    • Method and apparatus for plasma processing with control of ion energy distribution at the substrates
    • 用于等离子体处理的方法和装置,通过控制基板上的离子能量分布
    • US06201208B1
    • 2001-03-13
    • US09433461
    • 1999-11-04
    • Amy Eileen WendtShiang-Bau Wang
    • Amy Eileen WendtShiang-Bau Wang
    • B23K900
    • H01J37/32082B23K10/003B23K2101/40H01J37/32706H01L21/31116
    • In plasma processing, a bias voltage is provided from a power supply through a DC blocking capacitor to a platform on which a substrate to be treated is supported within a plasma reactor. The periodic bias voltage applied to the DC blocking capacitor has a waveform comprised of a voltage pulse peak followed by a ramp down of voltage from a first level lower than the pulse peak to a second lower level, the period of the bias waveform and the ramp down of voltage in each cycle selected to compensate for and substantially cancel the effect of ion accumulation on the substrate so as to maintain a substantially constant DC self-bias voltage on the substrate between the voltage pulse peaks. The waveform may include a single voltage pulse peak followed by a ramp down in voltage during each cycle of the bias voltage such that the ion energy distribution function at the substrate has a single narrow peak centered at a selected ion energy. The waveform may also comprise two voltage pulse peaks each followed by a ramp down of voltage selected to provide a bias voltage at the substrate comprising two voltage peaks during each cycle with DC self-bias voltages following each pulse peak at two different substantially constant DC levels, resulting in an ion energy distribution function at the substrate that includes two peaks of ion flux centered at two selected ion energies with substantially no ion flux at other ion energies. The ion energy distribution function may thus be tailored to best accommodate the desired plasma treatment process and can be used to reduce the effects of differential charging of substrates.
    • 在等离子体处理中,从电源通过隔直流电容器向待处理的基板支撑在等离子体反应器内的平台提供偏置电压。 施加到隔直电容器的周期性偏置电压具有波形,其包括电压脉冲峰值,随后是从低于脉冲峰值的第一电平到第二较低电平的电压斜坡下降,偏置波形和斜坡的周期 选择每个循环中的电压降低以补偿并基本上消除基板上的离子累积的影响,以便在电压脉冲峰值之间保持基板上的基本恒定的DC自偏压。 波形可以包括单个电压脉冲峰值,随后在偏置电压的每个周期期间电压下降,使得衬底处的离子能量分布函数具有以所选离子能为中心的单个窄峰值。 波形还可以包括两个电压脉冲峰值,每个电压脉冲峰值随后是选择的电压的斜坡下降,以在每个周期期间提供包括两个电压峰值的偏置电压,其中在两个不同的基本恒定的DC电平处的每个脉冲峰值之后的直流自偏压 导致在衬底处的离子能量分布函数,其包括以两个选择的离子能量为中心的离子通量的两个峰值,其它离子能量基本上没有离子通量。 因此,离子能量分布函数可以被定制以最佳地适应期望的等离子体处理过程,并且可以用于减少衬底的不同充电的影响。