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1. 发明申请

US20140319405A1 POLING TREATMENT METHOD, MAGNETIC FIELD POLING DEVICE, AND PIEZOELECTRIC FILM 有权
标题翻译：抛光处理方法，磁场检测装置和压电膜
公开(公告)号：US20140319405A1
公开(公告)日：2014-10-30
申请号：US14350864
申请日：2011-10-14
申请人： Takeshi Kijima , Yuuji Honda , Tomoyuki Araki
发明人： Takeshi Kijima , Yuuji Honda , Tomoyuki Araki
IPC分类号： H01L41/187 , H01L41/257
CPC分类号： H01L41/1876 , G02F1/3558 , H01L41/0805 , H01L41/257 , H01L41/314 , Y10T29/42
摘要： To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled 2; a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled 2; and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.
摘要翻译：通过干法在简单的程序中进行极化处理。本发明的一个方面是一种磁场极化装置，包括：第一保持部分，被配置成保持被膜极2; 第二保持部构造成将产生磁场B的磁体保持在被膜极2上; 以及移动机构，被配置为沿着与磁场B的方向垂直的方向移动第一保持部或第二保持部。

2. 发明申请

US20140242379A1 FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电磁膜及其制造方法
公开(公告)号：US20140242379A1
公开(公告)日：2014-08-28
申请号：US14235626
申请日：2011-07-29
申请人： Takeshi Kijima , Yuuji Honda
发明人： Takeshi Kijima , Yuuji Honda
IPC分类号： B05D5/00
CPC分类号： H01L41/0815 , B05D1/005 , B05D3/0254 , B05D5/00 , B05D7/54 , H01L41/187 , H01L41/1873 , H01L41/1878 , H01L41/318 , Y10T428/26
摘要： To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1-XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.
摘要翻译：制造由无铅材料形成的铁电体膜。根据本发明的一个方面的铁电体膜包括（K1-XNaX）NbO3膜或具有钙钛矿结构的BiFeO 3膜和优先取向成（001）的结晶氧化物，其形成在上侧和下侧的至少一个上的（K1-XNaX）NbO3膜或BiFeO3膜，X满足下式0.3≤nlE; X＆lt; l1; 0.7。

3. 发明申请

US20130059076A1 SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING THIN FILM 有权
标题翻译：基板处理装置和制造薄膜的方法
公开(公告)号：US20130059076A1
公开(公告)日：2013-03-07
申请号：US13643873
申请日：2010-04-28
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： B05C11/08 , B05D3/12
CPC分类号： H01L21/67017 , B05C11/023 , B05C11/08 , B05D1/005 , B05D3/0486 , H01L21/02197 , H01L21/02282 , H01L21/6715 , H01L21/67196 , H01L21/67207
摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.
摘要翻译：提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a，旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

4. 发明申请

US20140191618A1 POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE 审中-公开
标题翻译：抛光处理方法，等离子体激光装置，压电体及其制造方法，成膜装置和蚀刻装置以及灯具退火装置
公开(公告)号：US20140191618A1
公开(公告)日：2014-07-10
申请号：US14123138
申请日：2011-06-07
申请人： Takeshi Kijima , Yuuji Honda
发明人： Takeshi Kijima , Yuuji Honda
IPC分类号： H01L41/257 , B23K10/00 , H01L21/324
CPC分类号： H01L41/257 , B23K10/003 , H01L21/324 , Y10T29/42
摘要： A plasma poling device includes a holding electrode (4) which is disposed in a poling chamber (1) and holds a substrate to be poled (2), an opposite electrode (7) which is disposed in the poling chamber and disposed facing the substrate to be poled held on the holding electrode, a power source (6) electrically connected to one electrode of the holding electrode and the opposite electrode, a gas supply mechanism supplying a plasma forming gas into a space between the opposite electrode and the holding electrode, and a control unit controlling the power source and the gas supply mechanism. The control unit controls the power source and the gas supply mechanism so as to form a plasma at a position facing the substrate to be poled and to apply a poling treatment to the substrate to be poled.
摘要翻译：一种等离子体极化装置，包括：保持电极（4），其设置在极化室（1）中并保持待极化的基板（2）;相对电极（7），设置在所述极化室中并面向所述基板被保持在保持电极上，电连接到保持电极和相对电极的一个电极的电源（6），将等离子体形成气体供给到相对电极和保持电极之间的空间中的气体供给机构，以及控制电源和气体供给机构的控制单元。控制单元控制电源和气体供给机构，以在面向要极化的基板的位置处形成等离子体，并对待极化的基板进行极化处理。

5. 发明申请

US20130022839A1 PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM 有权
标题翻译： PBNZT FERROELECTRIC FILM，SOL-GEL SOLUTION，FILM FORMING METHOD AND METHOD FOR PRODUCE FERROELECTRIC FILM
公开(公告)号：US20130022839A1
公开(公告)日：2013-01-24
申请号：US13522824
申请日：2010-07-23
申请人： Takeshi Kijima , Yuuji Honda
发明人： Takeshi Kijima , Yuuji Honda
IPC分类号： H01L41/187 , B32B18/00 , H01L41/22
CPC分类号： H01L41/39 , C01G23/003 , C01G33/006 , C23C18/1216 , C23C18/1225 , C23C18/1254 , C23C18/1295 , H01L21/02197 , H01L21/02282 , H01L41/187
摘要： To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
摘要翻译：提供能够防止足够的氧离子缺乏的PBNZT铁电体膜。根据本发明实施例的PBNZT铁电体膜是由ABO 3表示的钙钛矿结构的铁电体的铁电体膜，其中，钙钛矿结构的铁电体是含有Pb 2+作为A-位离子的PZT系铁电体，含有 Zr4 +和Ti4 +作为B位离子，A位含有Bi3 +作为A位点补偿离子，B位含有Nb5 +作为B位点补偿离子。

6. 发明授权

US09486834B2 Ferroelectric film and method for manufacturing the same 有权
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US09486834B2
公开(公告)日：2016-11-08
申请号：US14235626
申请日：2011-07-29
申请人： Takeshi Kijima , Yuuji Honda
发明人： Takeshi Kijima , Yuuji Honda
IPC分类号： H01L41/187 , H01L41/083 , H01L41/318 , B05D5/00 , H01L41/08
CPC分类号： H01L41/0815 , B05D1/005 , B05D3/0254 , B05D5/00 , B05D7/54 , H01L41/187 , H01L41/1873 , H01L41/1878 , H01L41/318 , Y10T428/26
摘要： To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K1−XNaX)NbO3 film or a BiFeO3 film having a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1−XNaX)NbO3 film or BiFeO3 film, and X satisfies the formula below 0.3≦X≦0.7.
摘要翻译：制造由无铅材料形成的铁电体膜。根据本发明的一个方面的铁电体膜包括（K1-XNaX）NbO3膜或具有钙钛矿结构的BiFeO 3膜和优先取向成（001）的结晶氧化物，其形成在上侧和下侧的至少一个上的（K1-XNaX）NbO3膜或BiFeO3膜，X满足下式0.3≤nlE; X＆lt; l1; 0.7。

7. 发明申请

US20140225317A1 METHOD FOR MANUFACTURING FERROELECTRIC FILM 审中-公开
标题翻译：制造薄膜的方法
公开(公告)号：US20140225317A1
公开(公告)日：2014-08-14
申请号：US14235207
申请日：2011-07-29
申请人： Takeshi Kijima , Yuuji Honda
发明人： Takeshi Kijima , Yuuji Honda
IPC分类号： B29C39/00
CPC分类号： B29C39/003 , C01G33/006 , C01P2002/34 , C01P2002/72 , C01P2004/03 , H01L21/02197 , H01L21/02282 , H01L41/1873 , H01L41/318 , H01L41/331
摘要： To provide a method for manufacturing a ferroelectric film formed of a lead-free material. The method for manufacturing a ferroelectric film according to an aspect of the present invention is a method for manufacturing a ferroelectric film including the steps of pouring a sol-gel solution for forming (K1-XNaX)NbO3 into a mold 3, calcining the sol-gel solution to form a (K1-XNaX)NbO3 material film inside the mold 3, heat-treating and crystallizing the (K1-XNaX)NbO3 material film in an oxygen atmosphere to form a (K1-XNaX)NbO3 crystallized film inside the mold 3 and removing the mold 3 through etching, and is characterized in that the mold 3 is more easily etched than the (K1-XNaX)NbO3 crystallized film and the X satisfies a formula below 0.3≦X≦0.7.
摘要翻译：提供一种制造由无铅材料形成的铁电体膜的方法。根据本发明的一个方面的铁电体膜的制造方法是一种强电介质膜的制造方法，其特征在于，包括以下步骤：将用于形成（K1-XNaX）NbO3的溶胶 - 凝胶溶液倒入模具3中，凝胶溶液在模具3内形成（K1-XNaX）NbO3材料膜，在氧气氛中热处理和结晶（K1-XNaX）NbO3材料膜，以在模具内形成（K1-XNaX）NbO3结晶膜并且通过蚀刻去除模具3，其特征在于，模具3比（K1-XNaX）NbO 3结晶膜更容易蚀刻，并且X满足低于0.3＆lt; NlE; X＆lt; lE; 0.7的公式。

8. 发明授权

US09831417B2 Poling treatment method, magnetic field poling device, and piezoelectric film 有权
公开(公告)号：US09831417B2
公开(公告)日：2017-11-28
申请号：US14350864
申请日：2011-10-14
申请人： Takeshi Kijima , Yuuji Honda , Tomoyuki Araki
发明人： Takeshi Kijima , Yuuji Honda , Tomoyuki Araki
IPC分类号： G02F1/355 , H01L41/08 , H01L41/187 , H01L41/257 , H01L41/314
CPC分类号： H01L41/1876 , G02F1/3558 , H01L41/0805 , H01L41/257 , H01L41/314 , Y10T29/42
摘要： To perform poling treatment in a simple procedure by dry process. A magnetic field poling device includes a first holding part configured to hold a film-to-be-poled (2); a second holding part configured to hold a magnet generating a magnetic field B to the film-to-be-poled (2); and a moving mechanism configured to move the first holding part or the second holding part in a direction perpendicular to the direction of the magnetic field B.

9. 发明授权

US09171745B2 Substrate treatment apparatus and method for manufacturing thin film 有权
标题翻译：基板处理装置及薄膜制造方法
公开(公告)号：US09171745B2
公开(公告)日：2015-10-27
申请号：US13643873
申请日：2010-04-28
申请人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人： Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号： B05C11/08 , B05D3/12 , H01L21/67 , B05C11/02 , H01L21/02 , B05D3/04 , B05D1/00
CPC分类号： H01L21/67017 , B05C11/023 , B05C11/08 , B05D1/005 , B05D3/0486 , H01L21/02197 , H01L21/02282 , H01L21/6715 , H01L21/67196 , H01L21/67207
摘要： To provide a substrate treatment apparatus capable of suppressing adherence of dust to a film coated on a substrate. As an aspect of the present invention is a substrate treatment apparatus provided with a spin-coating treatment chamber 4a for coating a film on the substrate by spin-coating, a first air-conditioning mechanism that regulates an amount of dust in the air in the spin-coating treatment chamber, an annealing treatment chamber 7a for performing lamp annealing treatment on the film coated on the substrate, a conveying chamber 2a that is connected to each of the spin-coating treatment chamber and the annealing treatment chamber and is for conveying the substrate between the spin-coating treatment chamber and the annealing treatment chamber each other, and a second air-conditioning mechanism that regulate an amount of dust in the air in the conveying chamber.
摘要翻译：提供能够抑制灰尘对涂布在基材上的膜的粘附性的基板处理装置。作为本发明的一个方面，提供一种基板处理装置，该基板处理装置具有旋转涂布处理室4a，用于通过旋转涂布在基板上涂覆膜;第一空调机构，其调节空气中的灰尘量旋涂处理室，对涂布在基板上的膜进行灯退火处理的退火处理室7a，与旋涂处理室和退火处理室连接的输送室2a，旋转涂布处理室和退火处理室之间的基板，以及调节输送室中的空气中的灰尘量的第二空调机构。

10. 发明申请

US20130165313A1 FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR MANUFACTURING FERROELECTRIC FILM 审中-公开
标题翻译：电解膜，溶胶凝胶溶液，薄膜形成方法和制造电磁膜的方法
公开(公告)号：US20130165313A1
公开(公告)日：2013-06-27
申请号：US13809264
申请日：2010-07-12
申请人： Takeshi Kijima , Yuuji Honda , Takekazu Shigenai
发明人： Takeshi Kijima , Yuuji Honda , Takekazu Shigenai
IPC分类号： C04B35/49 , B05D5/12
CPC分类号： H01B3/12 , C01G23/002 , C01G25/006 , C01P2002/34 , C01P2004/03
摘要： To produce a ferroelectric film including a non-lead material. An embodiment of the present invention is a ferroelectric film characterized by being represented by (Baaα1-a)(Tibβ1-b(α: one or more metal elements among Mg (magnesium), Ca2+ (calcium), Sr (strontium), Li (lithium), Na (sodium), K (potassium), Rb (rubidium), Cs (cesium), Mg (magnesium), Ca2+ (calcium) and Sr (strontium), β: one or more metal elements among Ti (titanium), V (vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (copper), Zr (zirconium), Nb (niobium), Mo (molybdenum), Ru (ruthenium), Rh (rhodium), Pd (palladium), Ag (silver), Sc (scandium), Y (yttrium), La (lanthanum), Ce (cerium), Pr (praseodymium), Nd (neodymium), Sm (samarium), Eu (europium), Gd (gadolinium), Tb (terbium), Dy (dysprosium), Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium), Lu (lutetium), Ha (hafnium) and Ta (tantalum)).
摘要翻译：制造包含非铅材料的铁电体膜。本发明的一个实施方案是由（Baaalpha1-a）（Tibbeta1-b（α：Mg（镁））中的一种或多种金属元素，Ca 2+（钙），Sr（锶），Li（锂（钠），钾（钾），Rb（铷），Cs（铯），Mg（镁），Ca2 +（钙）和Sr（锶），β：钛（钛），钒（钒），铬（铬），锰（锰），铁（Fe），钴（钴），镍（镍），铜（铜），锆（锆），铌（铌），Ru（钌），Rh（铑），Pd（钯），Ag（银），Sc（钪），Y（钇），La（镧），Ce（铈），Pr（镨），钐（钐），铕（铕），钆（铽），铽（铽），钆（钆），铽（铽），镝（镝），钬（钬），铪（铪）和钽（钽））。

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