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1. 发明申请

US20160079059A1 ELLIPTICAL WAFER MANUFACTURE 审中-公开
标题翻译： ELLIPTICAL WAFER制造
公开(公告)号：US20160079059A1
公开(公告)日：2016-03-17
申请号：US14488617
申请日：2014-09-17
申请人： International Business Machines Corporation
发明人： Stephen P. Ayotte , Dylan J. Fath , Michael C. Johnson , Travis S. Longenbach , Nicolas E. Pizzuti
IPC分类号： H01L21/02 , H01L31/0352 , H01L29/06 , H01L31/18 , H01L21/78 , H01L29/04
CPC分类号： H01L31/035281 , B28D5/00 , B28D5/0017 , C30B15/36 , C30B29/06 , H01L21/02008 , H01L31/1804
摘要： An approach to manufacturing an elliptical semiconductor wafer includes a structure for an elliptical semiconductor wafer with a crystal direction, wherein the crystal direction is provided by a seed crystal orientation. The structure of the elliptical semiconductor wafer has a minor radius for the elliptical semiconductor wafer and a major radius for the elliptical semiconductor wafer wherein the major radius is greater than the minor radius.
摘要翻译：制造椭圆半导体晶片的方法包括具有晶体方向的椭圆形半导体晶片的结构，其中晶体方向由晶种取向提供。椭圆形半导体晶片的结构具有用于椭圆形半导体晶片的小半径以及椭圆半导体晶片的大半径，其中主半径大于次半径。

2. 发明申请

US20190067053A1 COLD FLUID SEMICONDUCTOR DEVICE RELEASE DURING PICK AND PLACE OPERATIONS, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
公开(公告)号：US20190067053A1
公开(公告)日：2019-02-28
申请号：US16020625
申请日：2018-06-27
申请人： Micron Technology, Inc.
发明人： Jeremy E. Minnich , Benjamin L. McClain , Travis M. Jensen
IPC分类号： H01L21/67 , H01L21/683 , H05K13/00
CPC分类号： H01L21/67132 , B28D5/0017 , B28D5/0041 , H01L21/6836 , H01L2221/68327 , H01L2221/68381 , H01L2221/68386 , H05K13/0061 , H05K13/0404 , Y10T156/1911 , Y10T156/1983
摘要： Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further includes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

3. 发明授权

US5719077A Fixture and method for laser fabrication by in-situ cleaving of semiconductor bars 失效
标题翻译：通过半导体棒的原位切割激光制造的夹具和方法
公开(公告)号：US5719077A
公开(公告)日：1998-02-17
申请号：US549897
申请日：1995-10-30
申请人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
发明人： Utpal Kumar Chakrabarti , Judith Francavilla de Jong , Erdmann Frederick Schubert , James Dennis Wynn , George John Zydzik
IPC分类号： B28D5/00 , H01L21/301 , H01L21/304 , H01S5/00 , H01S5/02 , H01S5/40 , H01L21/203
CPC分类号： H01L21/3043 , B28D5/0017 , H01S5/0201 , H01S5/0202 , H01S5/4025 , Y10T225/357
摘要： The invention is an apparatus and method for cleaving a semiconductor bar and coating the cleaved facets within a vacuum environment. The apparatus is a fixture having at least one rotator for cleaving one or more semiconductor samples into semiconductor bars and positioning the semiconductor bars for immediate coating of their cleaved facets. The fixture is operably positioned within a processing chamber and exposed to a conventional coating medium before, during or immediately after cleaving the semiconductor sample. The fixture cleaves the semiconductor samples in a manner that reduces semiconductor sample waste and also allows the processing environment requirements to be reduced compared to other cleaving and coating techniques. A single actuation feed-through mechanism actuates the fixture from outside of the processing chamber.
摘要翻译：本发明是用于切割半导体棒并在真空环境中涂覆切割面的装置和方法。该装置是具有至少一个旋转器的固定装置，用于将一个或多个半导体样品切割成半导体棒，并且定位半导体棒以立即涂覆其切割面。夹具可操作地定位在处理室内，并在切割半导体样品之前，期间或之后暴露于常规涂覆介质。固定装置以减少半导体样品废物的方式切割半导体样品，并且与其他切割和涂覆技术相比，可以减少处理环境要求。单个致动馈通机构从处理室的外部致动固定装置。

4. 发明申请

US20180269104A1 METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE 审中-公开
公开(公告)号：US20180269104A1
公开(公告)日：2018-09-20
申请号：US15977608
申请日：2018-05-11
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gordon M. GRIVNA
IPC分类号： H01L21/78 , H01L23/544 , H01L21/67 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/78 , B28D5/0017 , H01L21/3065 , H01L21/477 , H01L21/67092 , H01L21/67098 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2223/54453 , Y02P80/30 , Y10T29/41 , Y10T225/304 , Y10T225/379 , Y10T225/386
摘要： Die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

5. 发明申请

US20150332969A1 SEMICONDUCTOR DIE SINGULATION METHOD AND APPARATUS 有权
公开(公告)号：US20150332969A1
公开(公告)日：2015-11-19
申请号：US14808729
申请日：2015-07-24
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gordon M. GRIVNA
IPC分类号： H01L21/78 , B28D5/00 , H01L21/477 , H01L21/3065 , H01L21/67 , H01L21/683
CPC分类号： H01L21/78 , B28D5/0017 , H01L21/3065 , H01L21/477 , H01L21/67092 , H01L21/67098 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2223/54453 , Y02P80/30 , Y10T29/41 , Y10T225/304 , Y10T225/379 , Y10T225/386
摘要： In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.
摘要翻译：在一个实施例中，通过将晶片放置在第一载体衬底上，使背面层与载体衬底相邻，将晶片放置在具有背层的晶片上，形成单晶线以暴露分离线内的背层，并使用将局部压力施加到晶片以分离分离线中的背层的机械装置。局部压力可以通过靠近背层的第一载体衬底施加，或者可以通过附接到与背层相对的晶片的前侧的第二载体衬底施加。

6. 发明申请

US20090165277A1 METHOD AND DEVICE FOR SEPARATING A STRUCTURE 失效
标题翻译：分离结构的方法和装置
公开(公告)号：US20090165277A1
公开(公告)日：2009-07-02
申请号：US12341645
申请日：2008-12-22
申请人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
发明人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
IPC分类号： B23P19/00
CPC分类号： B28D5/0017 , H01L21/67092 , Y10T29/49815 , Y10T29/49821 , Y10T29/49822 , Y10T29/53274 , Y10T29/53683 , Y10T29/54
摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.
摘要翻译：一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。

7. 发明授权

US11699619B2 Automated transfer and drying tool for process chamber 有权
公开(公告)号：US11699619B2
公开(公告)日：2023-07-11
申请号：US17236276
申请日：2021-04-21
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsung-Sheng Kuo , Hsu-Shui Liu , Jiun-Rong Pai , Shou-Wen Kuo , Yang-Ann Chu
IPC分类号： H01L21/78 , B28D5/00 , B28D7/04 , H01L21/67 , H01L21/66 , H01L21/02
CPC分类号： H01L21/78 , B28D5/0017 , B28D7/04 , H01L21/02076 , H01L21/67034 , H01L21/67092 , H01L21/67173 , H01L21/67288 , H01L22/12
摘要： Some embodiments relate to a processing tool for processing a singulated semiconductor die. The tool includes an evaluation unit, a drying unit, and a die wipe station. The evaluation unit is configured to subject the singulated semiconductor die to a liquid to detect flaws in the singulated semiconductor die. The drying unit is configured to dry the liquid from a frontside of the singulated semiconductor die. The die wipe station includes an absorptive drying structure configured to absorb the liquid from a backside of the singulated semiconductor die after the drying unit has dried the liquid from the frontside of the singulated semiconductor die.

8. 发明申请

US20190214301A1 METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE 审中-公开
公开(公告)号：US20190214301A1
公开(公告)日：2019-07-11
申请号：US16352218
申请日：2019-03-13
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gordon M. GRIVNA
IPC分类号： H01L21/78 , H01L21/67 , H01L23/544 , H01L21/477 , B28D5/00 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/78 , B28D5/0017 , H01L21/3065 , H01L21/477 , H01L21/67092 , H01L21/67098 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2223/54453 , Y02P80/30 , Y10T225/304 , Y10T225/379 , Y10T225/386
摘要： A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.

9. 发明授权

US10014217B2 Method of singulating semiconductor wafer having a plurality of die and a back layer disposed along a major surface 有权
公开(公告)号：US10014217B2
公开(公告)日：2018-07-03
申请号：US15384646
申请日：2016-12-20
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gordon M. Grivna
IPC分类号： H01L21/78 , H01L21/3065 , H01L21/67 , H01L21/683 , H01L23/544
CPC分类号： H01L21/78 , B28D5/0017 , H01L21/3065 , H01L21/477 , H01L21/67092 , H01L21/67098 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L23/544 , H01L2221/68327 , H01L2223/54453 , Y02P80/30 , Y10T225/304 , Y10T225/379 , Y10T225/386
摘要： De are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.

10. 发明申请

US20160089813A1 Device and Method for Cleaving a Crystalline Sample 审中-公开
标题翻译：切割结晶样品的装置和方法
公开(公告)号：US20160089813A1
公开(公告)日：2016-03-31
申请号：US14871668
申请日：2015-09-30
申请人： Dimitry BOGUSLAVSKY , Mark KOVLER
发明人： Dimitry BOGUSLAVSKY , Mark KOVLER
IPC分类号： B28D5/00 , H01L21/78 , H01L21/67
CPC分类号： B28D5/0017 , B28D5/0052 , H01L21/67092 , H01L21/78
摘要： A device for cleaving a crystalline sample, the device comprises: upper and lower bending elements that are arranged to contact upper and lower surfaces of the crystalline sample and to apply a bending moment on the crystalline sample; a first surface impact element that contacts a first surface of the crystalline sample; a cleaving element that is arranged to impact a second surface of the crystalline sample while the bending moment is applied on the crystalline element; wherein the second surface is opposite to the first side and oriented to the upper and lower surfaces of the crystalline sample wherein the device excludes any second surface alignment element for aligning the crystalline sample by contacting the second surface.
摘要翻译：一种用于切割结晶样品的装置，该装置包括：上和下弯曲元件，其布置成接触结晶样品的上表面和下表面，并在结晶样品上施加弯矩; 与所述结晶样品的第一表面接触的第一表面冲击元件; 该切割元件被布置成在弯曲力矩施加到结晶元件上时冲击晶体样品的第二表面; 其中所述第二表面与所述第一侧相对并且定向到所述结晶样品的上表面和下表面，其中所述装置排除任何第二表面对准元件，以通过接触所述第二表面来对准所述结晶样品。

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