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1. 发明申请

US20180286688A1 METHOD OF PROCESSING WORKPIECE 审中-公开
公开(公告)号：US20180286688A1
公开(公告)日：2018-10-04
申请号：US15934443
申请日：2018-03-23
申请人： DISCO CORPORATION
发明人： Kenji Takenouchi
IPC分类号： H01L21/304 , H01L21/687 , H01L21/683 , H01L21/78
CPC分类号： H01L21/3043 , B23K26/364 , B23K2103/56 , B28D5/00 , B28D5/022 , H01L21/67092 , H01L21/6836 , H01L21/68728 , H01L21/68785 , H01L21/78 , H01L2221/68327
摘要： A method of processing a plate-shaped workpiece that includes on a reverse side thereof a layered body containing metal which is formed in superposed relation to projected dicing lines includes the steps of holding the reverse side of the workpiece on a holding table, thereafter, applying a laser beam having a wavelength that is absorbable by the workpiece to a face side thereof along the projected dicing lines to form laser-processed grooves in the workpiece which terminate short of the layered body, and thereafter, cutting bottoms of the laser-processed grooves with a cutting blade to sever the workpiece together with the layered body along the projected dicing lines. The step of cutting bottoms of the laser-processed grooves includes the step of cutting bottoms of the laser-processed grooves while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

2. 发明申请

US20180254215A9 Method for Dicing a Substrate with Back Metal 审中-公开
公开(公告)号：US20180254215A9
公开(公告)日：2018-09-06
申请号：US15148707
申请日：2016-05-06
申请人： Plasma-Therm, LLC
发明人： Peter Falvo , Linnell Martinez , David Pays-Volard , Rich Gauldin , Russell Westerman
IPC分类号： H01L21/78 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/78 , B28D5/00 , H01L21/02052 , H01L21/32136 , H01L21/7813
摘要： The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.

3. 发明申请

US20170320238A1 SUBSTRATE PROCESSING TOOL 审中-公开
公开(公告)号：US20170320238A1
公开(公告)日：2017-11-09
申请号：US15528088
申请日：2015-11-26
申请人： Mitsuboshi Diamond Industrial Co., LTD.
发明人： Yosuke HIRAGURI , Noriyuki OGASAWARA , Shinichi SATO
IPC分类号： B28D5/00 , H01L31/0463 , B26D1/00 , B26D3/08
CPC分类号： B28D5/0011 , B25H7/04 , B26D1/0006 , B26D3/08 , B28D5/00 , B28D5/04 , H01L31/0463
摘要： A substrate processing tool is prevented from falling out of a tool holder. This substrate processing tool is a tool for attachment to a substrate processing apparatus. The substrate processing tool includes a tool main body, a blade edge portion, and an engaging portion. A holding portion that is to be held by the chuck portion of the substrate processing apparatus is formed in at least a portion of the tool main body. The blade edge portion is formed on one end side of the tool main body. The engaging portion is formed on the other end side of the tool main body, and protrudes farther than the surface of the tool main body.

4. 发明授权

US09709684B2 Systems and methods for scintillators having micro-crack surfaces 有权
公开(公告)号：US09709684B2
公开(公告)日：2017-07-18
申请号：US14570040
申请日：2014-12-15
申请人： General Electric Company
发明人： Chang Lyong Kim
IPC分类号： G01T1/20 , G01T1/202 , G01T1/29 , B23K26/00 , B23K26/352 , B28D5/00 , G01T1/164 , B23K103/00
CPC分类号： G01T1/2002 , B23K26/0006 , B23K26/352 , B23K2103/50 , B28D5/00 , G01T1/1644 , G01T1/2006 , G01T1/202 , G01T1/2985
摘要： A scintillator crystal array that is configured to receive rays emitted by an object to be imaged and to emit light energy responsive to the received rays includes plural crystals. At least one of the crystals includes an upper surface, a lower surface disposed opposite the upper surface, plural sides extending between the upper surface and the lower surface, and a micro-crack surface extending at least partially along at least one of the sides. The micro-crack surface includes micro-cracks formed in the crystal configured for controlling distribution of light through the crystal.

5. 发明申请

US20170182838A1 METHOD OF MARKING A SOLID STATE MATERIAL, AND SOLID STATE MATERIALS MARKED ACCORDING TO SUCH A METHOD 审中-公开
公开(公告)号：US20170182838A1
公开(公告)日：2017-06-29
申请号：US15304843
申请日：2015-04-16
申请人： Master Dynamic Limited
发明人： Yingnan WANG , Ching Tom KONG
IPC分类号： B44C1/22 , H01J37/32 , G03F7/00
CPC分类号： B44C1/227 , B28D5/00 , G03F7/00 , G03F7/0002 , H01J37/321 , H01J37/32192 , H01J2237/334
摘要： A method of forming a non-optically detectable identifiable mark at an outer surface of an article formed from a solid state material, said method including the steps of forming a plurality of recesses within a predetermined region of a photoresist 5 applied to an outer surface of an article formed from a solid state material, wherein said plurality of recesses is formed by two-photon absorption lithography and wherein said one or more recesses extend at least partially through the photoresist and from an outer surface of the photoresist and towards said outer surface of the article 10 formed from a solid state material; and applying an etching process such that at least a portion of the outer surface of said article is exposed and etched so as to form a plurality of etched portions extending into said article from the outer surface of the article and corresponding to said plurality of recesses; wherein said predetermined region of said photoresist defines an identifiable mark to be applied to the outer 15 surface of said article; wherein said plurality of etched portions forms the nonoptically identifiable mark on the outer surface of said article; and wherein the maximum width of the etched portions of is less than 200 nm such that the identifiable mark is non-optically detectable in the visible light spectrum.

6. 发明申请

US20170069482A1 FLOAT ZONE SILICON WAFER MANUFACTURING SYSTEM AND RELATED PROCESS 审中-公开
标题翻译： FLOAT ZONE SILICON WAFER制造系统及相关流程
公开(公告)号：US20170069482A1
公开(公告)日：2017-03-09
申请号：US15354957
申请日：2016-11-17
申请人： Rayton Solar Inc.
发明人： Andrew X. Yakub , James Benjamin Rosenzweig , Mark Stanley Goorsky
IPC分类号： H01L21/02 , H01L21/263 , C30B33/02 , C30B13/20 , C30B29/06
CPC分类号： H01L21/02035 , B28D5/00 , C30B13/20 , C30B13/24 , C30B29/06 , C30B29/64 , C30B33/02 , C30B33/06 , H01L21/263 , Y10T117/1088
摘要： The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.
摘要翻译：用于制造硅晶片的工艺包括用于安装用于剥离的浮动区硅工件的步骤，为微波装置通电以产生足以穿透浮动区硅工件的外表面层的通电束，使外表面层具有通电束的浮区硅工件，并且将硅剥离的外表面层从浮区硅工件中去除，其厚度小于100微米。

7. 发明申请

US20160343619A1 SUBSTRATE DIVIDING METHOD 有权
公开(公告)号：US20160343619A1
公开(公告)日：2016-11-24
申请号：US15226519
申请日：2016-08-02
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
IPC分类号： H01L21/78 , H01L21/683 , H01L23/00 , H01L21/306 , H01L21/268 , H01L21/304
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

8. 发明申请

US20160343617A1 SUBSTRATE DIVIDING METHOD 有权
公开(公告)号：US20160343617A1
公开(公告)日：2016-11-24
申请号：US15226284
申请日：2016-08-02
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Fumitsugu FUKUYO , Kenshi FUKUMITSU , Naoki UCHIYAMA
IPC分类号： H01L21/78 , H01L21/306 , H01L21/304
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

9. 发明申请

US20160329246A1 LASER WORKING METHOD, LASER WORKING APPARATUS, AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：激光工作方法，激光工作装置及其制造方法
公开(公告)号：US20160329246A1
公开(公告)日：2016-11-10
申请号：US15213723
申请日：2016-07-19
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Makoto NAKANO , Koji KUNO , Tetsuya OSAJIMA , Takashi INOUE , Masayoshi KUMAGAI
IPC分类号： H01L21/78 , C03B33/02 , B23K26/53 , B23K26/064 , H01L23/544 , B23K26/00
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/046 , B23K26/0624 , B23K26/064 , B23K26/0861 , B23K26/128 , B23K26/40 , B23K26/402 , B23K26/53 , B23K2103/50 , B23K2103/56 , B28D1/221 , B28D5/00 , C03B33/0222 , H01L23/544 , H01L2223/54453 , Y10T29/49826
摘要： An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the object becomes a predetermined aberration or less. Therefore, aberration of the laser light generated at a position on which a converging point of the laser light is located is made as small as possible, to enhance the energy density of the laser light at that position, which makes it possible to form a modified region with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator is used, it is possible to improve the utilization efficiency of the laser light as compared with a transmissive type spatial light modulator.
摘要翻译：用由反射型空间光调制器调制的激光照射物体，使得会聚在物体内的激光的像差成为预定像差或更小。因此，在激光的会聚点所在的位置处产生的激光的像差尽可能地小，以增强该位置处的激光的能量密度，这使得可以形成经修改的具有高功能的区域作为切割的起点。此外，由于使用反射型空间光调制器，与透射型空间光调制器相比，可以提高激光的利用效率。

10. 发明申请

US20160130726A1 Method for manufacturing N-type semiconductor element for cooling or heating device 审中-公开
标题翻译：用于制造或加热装置的N型半导体元件的制造方法
公开(公告)号：US20160130726A1
公开(公告)日：2016-05-12
申请号：US14998282
申请日：2015-12-24
申请人： SUZHOU WEIYUAN NEW MATERIAL TECHNOLOGY CO., LTD.
发明人： Zhiming CHEN , Wei GU
IPC分类号： C30B29/46 , B28D5/00 , H01L35/34 , C30B15/14 , C30B15/10
CPC分类号： C30B29/46 , B28D5/00 , C01B19/007 , C30B15/10 , C30B15/14 , H01L35/34
摘要： Disclosed is a method for manufacturing N-type semiconductor element for cooling or heating device, the N-type semiconductor element is made of tellurium, bismuth and selenium material, firstly, smashing and grinding the tellurium, bismuth and selenium material to be 2000 meshes or more; and then, according to the proportion of each material in parts by weight, proportioning the materials to obtain a mixture, the proportion thereof is: 40 to 44 parts of tellurium, 53 to 57 parts of bismuth and 28 to 32 parts of selenium. During operation, the temperature difference between the two ends thereof is larger, and through a test, the temperature difference between the cold end and the hot end reaches about 73° C. to 78° C. Therefore, the N-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The N-type semiconductor element is particularly suitable for manufacturing a semiconductor cooling or heating device.
摘要翻译：公开了用于制造或加热装置的N型半导体元件的方法，该N型半导体元件由碲，铋和硒材料制成，首先将碲，铋和硒材料粉碎和研磨成2000目或更多; 然后按照各重量份的比例，将材料配比得到混合物，其比例为40〜44份碲，53〜57份铋和28〜32份硒。在操作过程中，其两端之间的温差较大，通过试验，冷端和热端之间的温差达到约73℃至78℃。因此，N型半导体元件具有运行效率高，能耗低的优点。 N型半导体元件特别适用于制造半导体冷却或加热装置。

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