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1. 发明申请

US20190016591A1 MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE 审中-公开
公开(公告)号：US20190016591A1
公开(公告)日：2019-01-17
申请号：US16137914
申请日：2018-09-21
申请人： UNITED MICROELECTRONICS CORP.
发明人： Te-Huang Chiu , Weng-Yi Chen , Kuan-Yu Wang
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00246 , B81B7/0006 , B81B2201/0214 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81B2203/0384 , B81B2203/0392 , B81B2203/04 , B81C1/00428 , B81C2201/014 , B81C2203/0735 , B81C2203/0771
摘要： A manufacturing method for a semiconductor structure is disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

2. 发明申请

US20180130795A1 ULTRASONIC TRANSDUCERS IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) WAFERS AND RELATED APPARATUS AND METHODS 审中-公开
公开(公告)号：US20180130795A1
公开(公告)日：2018-05-10
申请号：US15865774
申请日：2018-01-09
申请人： Butterfly Network, Inc.
发明人： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
IPC分类号： H01L27/06 , H01L27/092 , A61B8/00 , B06B1/02 , B81B3/00 , H01L23/528 , H01L23/522 , H01L21/8238 , H01L21/768 , H01L21/56 , H01L21/3213 , B81C1/00 , B81B7/00
CPC分类号： H01L27/0617 , A61B8/00 , A61B8/4494 , B06B1/02 , B06B1/0292 , B06B2201/51 , B81B3/0021 , B81B7/0006 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/32134 , H01L21/56 , H01L21/768 , H01L21/76838 , H01L21/823871 , H01L23/5226 , H01L23/528 , H01L27/0688 , H01L27/092 , H01L2224/16225
摘要： Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

3. 发明授权

US09708178B2 Integration of laminate MEMS in BBUL coreless package 有权
公开(公告)号：US09708178B2
公开(公告)日：2017-07-18
申请号：US13995924
申请日：2011-12-30
申请人： Weng Hong Teh , Robert L. Sankman
发明人： Weng Hong Teh , Robert L. Sankman
IPC分类号： B81B7/02 , B81B7/00 , B81C1/00 , H01L23/00 , H05K1/18
CPC分类号： B81B7/0006 , B81B2207/012 , B81B2207/07 , B81C1/00134 , B81C1/0023 , H01L23/48 , H01L24/24 , H01L24/82 , H01L2224/0401 , H01L2224/04105 , H01L2224/16135 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73259 , H01L2224/73267 , H01L2224/82047 , H01L2224/821 , H01L2224/92244 , H01L2224/97 , H01L2924/10253 , H01L2924/12042 , H01L2924/1461 , H01L2924/15311 , H05K1/185 , H01L2924/00 , H01L2224/16225 , H01L2224/82
摘要： An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

4. 发明申请

US20160368762A1 MEMS Devices and Methods for Forming Same 审中-公开
标题翻译： MEMS器件及其形成方法
公开(公告)号：US20160368762A1
公开(公告)日：2016-12-22
申请号：US15160884
申请日：2016-05-20
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Wen Cheng , Jung-Huei Peng , Shang-Ying Tsai , Hung-Chia Tsai , Yi-Chuan Teng
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0006 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0315 , B81B2207/098 , B81C1/0023 , B81C2203/0154 , B81C2203/0714 , H01L21/78 , H01L23/053 , H01L23/31 , H01L2924/16152 , H01L2924/16235
摘要： An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.
摘要翻译：一个实施例是包括具有第一压力的第一腔的第一MEMS模具和第二压力下具有第二空腔的第二MEMS模具，第二压力不同于第一压力的MEMS装置和围绕第一MEMS的模制材料模具和第二MEMS模具，所述模制材料具有在第一和第二MEMS模具上的第一表面。该装置还包括模制材料中的第一组电连接器，第一组电连接器中的每一个将第一和第二MEMS模具中的至少一个耦合到模制材料的第一表面，以及将第二组电连接器连接器在模制材料的第一表面上，每个第二组电连接器被耦合到第一组电连接器中的至少一个。

5. 发明授权

US09496806B2 MEMS device, electronic apparatus, and manufacturing method of MEMS device 有权
标题翻译： MEMS器件，电子设备和MEMS器件的制造方法
公开(公告)号：US09496806B2
公开(公告)日：2016-11-15
申请号：US13953092
申请日：2013-07-29
申请人： Seiko Epson Corporation
发明人： Yusuke Matsuzawa
IPC分类号： H02N1/00 , B81B7/00 , B81C1/00 , B81B3/00
CPC分类号： H02N1/006 , B81B3/0086 , B81B7/0006 , B81B7/0032 , B81B2201/0271 , B81B2203/04 , B81C1/00 , Y10T29/49117
摘要： A MEMS device is a MEMS device having a MEMS vibrator which includes a plurality of MEMS constituent elements laminated and formed above a first foundation portion which is laminated above a main surface of a wafer substrate, and the MEMS constituent elements are laminated above a first oxide film and a nitride film so as to cover an opening which is formed in the nitride film and exposes a second foundation portion above which the nitride film is laminated.
摘要翻译： MEMS器件是具有MEMS振动器的MEMS器件，MEMS振子包括层叠并形成在层叠在晶片衬底的主表面上的第一基底部分之上的多个MEMS构成元件，并且MEMS构成元件层叠在第一氧化物膜和氮化物膜，以覆盖形成在氮化物膜中的开口，并暴露第二基底部分，在该第二基底部分上层叠氮化物膜。

6. 发明申请

US20160299600A1 CONDUCTIVE STRUCTURE AND PREPARATION METHOD THEREFOR 审中-公开
标题翻译：导电结构及其制备方法
公开(公告)号：US20160299600A1
公开(公告)日：2016-10-13
申请号：US15037583
申请日：2015-05-07
申请人： LG CHEM, LTD.
发明人： Jin Hyong LIM , Song Ho JANG , Ki-Hwan KIM , Yong Chan KIM , Junghwan YOON , Chan Hyoung PARK , Ilha LEE
IPC分类号： G06F3/044 , G06F3/041
CPC分类号： G06F3/044 , B81B7/0006 , G06F3/041 , G06F3/0412 , G06F2203/04103 , H05K3/00 , H05K2201/00
摘要： The present application relates to a conductive structure body and a method for manufacturing the same. A conductive structure body according to an exemplary embodiment of the present application includes a transparent conductive layer, a metal layer which is provided on the transparent conductive layer and includes aluminum, and an aluminum oxynitride layer which is provided on the metal layer.
摘要翻译：本申请涉及一种导电结构体及其制造方法。根据本申请的示例性实施例的导电结构体包括透明导电层，设置在透明导电层上并包括铝的金属层和设置在金属层上的氧氮化铝层。

7. 发明授权

US09448401B2 Via structure and method thereof 有权
标题翻译：其结构及其方法
公开(公告)号：US09448401B2
公开(公告)日：2016-09-20
申请号：US14073307
申请日：2013-11-06
申请人： SILEX Microsystems AB
发明人： Thorbjorn Ebefors , Edvard Kalvesten , Peter Agren , Niklas Svedin
IPC分类号： G02B26/08 , B81B7/00 , H01L21/768 , H01L23/48 , G02B6/35
CPC分类号： G02B26/0833 , B81B7/0006 , B81B7/007 , B81B2207/092 , B81B2207/095 , G02B6/3518 , G02B6/3584 , G02B26/0841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A layered micro-electronic and/or micro-mechanic structure comprises at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.
摘要翻译：分层微电子和/或微机械结构包括在导电层之间具有绝缘层的至少三个交替导电层。还提供了在第一外层中的通孔，所述通孔包括由穿过该层的晶片天然材料制成的绝缘导电连接，在第一外层中延伸穿过其它层并进入所述通孔的导电插塞，以便提供通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于使所述插塞与所述选定层中的材料绝缘。它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。该装置具有根据本发明的分层结构。还提供了制造这种分层MEMS结构的方法。

8. 发明授权

US09403674B2 Methods for packaging a microelectromechanical system (MEMS) wafer and application-specific integrated circuit (ASIC) dies using through mold vias (TMVs) 有权
标题翻译：用于通过模具通孔（TMV）封装微机电系统（MEMS）晶片和专用集成电路（ASIC）模具的方法，
公开(公告)号：US09403674B2
公开(公告)日：2016-08-02
申请号：US14457160
申请日：2014-08-12
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chun-Wen Cheng , Hung-Chia Tsai
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/008 , B81B7/0006 , B81B7/0074 , B81C1/0023 , H01L24/19 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/92244 , H01L2924/00014
摘要： A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided.
摘要翻译：提供了一种用于通过模具通孔（TMV）封装具有集成电路管芯的微机电系统（MEMS）装置的方法。根据该方法，提供具有MEMS器件的MEMS基板。盖基板被固定到MEMS基板的顶表面。盖基板包括在盖基板的底表面中对应于MEMS器件的凹部。集成电路管芯在凹部上固定到盖衬底的顶表面上。形成覆盖MEMS基板，盖基板和集成电路管芯的壳体。形成与集成电路管芯电耦合并且在壳体的顶表面和集成电路管芯之间延伸的贯通模通孔（TMV）。还提供了应用该方法产生的结构。

9. 发明申请

US20160176706A1 SYSTEMS AND METHODS FOR FORMING MEMS ASSEMBLIES INCORPORATING GETTERS 审中-公开
公开(公告)号：US20160176706A1
公开(公告)日：2016-06-23
申请号：US14943300
申请日：2015-11-17
申请人： Western Digital (Fremont), LLC
发明人： Pezhman Monadgemi , Lei Wang
IPC分类号： B81C1/00
CPC分类号： B81C1/00277 , B81B7/0006 , B81B7/0038 , B81B7/007 , B81B2201/0235 , B81B2207/07 , B81B2207/095 , B81C1/00285 , B81C2203/0109 , B81C2203/0118 , B81C2203/0136 , B81C2203/0163
摘要： Systems and methods for forming MEMS assemblies incorporating getters are described. One such method for forming and bonding to a microelectromechanical systems (MEMS) assembly includes providing a first MEMS wafer including a metal layer on an inner surface and one or more cavities for forming a MEMS component, attaching a MEMS capping wafer, having at least one through hole via, to the inner surface of the first MEMS wafer thereby forming at least one encapsulated MEMs component within the first MEMS wafer, and bonding a wire to the metal layer through an open end of the at least one through hole via.

10. 发明授权

US09346669B2 Robust MEMS structure with via cap and related method 有权
标题翻译：具有通孔盖的可靠的MEMS结构及相关方法
公开(公告)号：US09346669B2
公开(公告)日：2016-05-24
申请号：US14719187
申请日：2015-05-21
申请人： Newport Fab
发明人： David J. Howard , Michael J. DeBar , Jeff Rose , Arjun Kar-Roy
IPC分类号： H01L23/482 , B81C1/00 , B81B7/00 , H01L21/768 , B81B3/00 , H01L29/417 , H01L21/4763
CPC分类号： B81C1/00095 , B81B3/007 , B81B7/0006 , B81B2201/0207 , B81B2203/0361 , B81C1/00111 , B81C1/00166 , B81C1/00658 , H01L21/47635 , H01L21/76883 , H01L29/0676 , H01L29/417
摘要： Self-supported MEMS structure and method for its formation are disclosed. An exemplary method includes forming a polymer layer over a MEMS plate over a substrate, forming a via collar along sidewalls of a first portion of a trench over the polymer layer, and forming a second portion of the trench within the polymer layer. The method also includes forming an oxide liner in the trench lining sidewalls of the via collar and sidewalls of the second portion of the trench, depositing a metallic filler in the trench to form a via, and forming a metal cap layer over the via collar and the metallic filler. The method further includes removing a portion of the metal cap layer to form a via cap, and removing the polymer layer such that the via is supported only on a bottom thereof by the substrate. An exemplary structure formed by the disclosed method is also disclosed.
摘要翻译：公开了自支撑MEMS结构及其形成方法。一种示例性方法包括在衬底上方的MEMS板上形成聚合物层，在聚合物层上形成沿沟槽第一部分的侧壁的通孔环，以及在聚合物层内形成沟槽的第二部分。该方法还包括在通孔环的沟槽衬里和沟槽的第二部分的侧壁的沟槽衬里中形成氧化物衬垫，在沟槽中沉积金属填料以形成通孔，并在通孔环上形成金属盖层，金属填料。该方法还包括去除金属盖层的一部分以形成通孔盖，以及去除聚合物层，使得通孔仅由基底在其底部支撑。还公开了通过公开的方法形成的示例性结构。

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