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    • 8. 发明授权
    • Niobium and vanadium organometallic precursors for thin film deposition
    • 铌和钒有机金属前体用于薄膜沉积
    • US08460989B2
    • 2013-06-11
    • US13123013
    • 2009-10-06
    • Nicolas BlascoAnthony Correia-AnacletoAudrey PinchartAndreas Zauner
    • Nicolas BlascoAnthony Correia-AnacletoAudrey PinchartAndreas Zauner
    • H01L21/8238H01L21/4763C23C16/00C07F9/00
    • H01L21/02205C07F9/00C23C16/45553H01L21/0228H01L21/3141
    • Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NMe2)2; (Cp)V(=NtBu)(NEtMe)2; (Cp)V(═NiPr)(NEt2)2; (Cp)V(═NiPr)(NMe2)2; (Cp)V(═NiPr)(NEtMe)2; (Cp)V(═NC5H11)(NEt2)2; (Cp)V(═NC5H11)(NMe2)2; (Cp)V(═NC5H11)(NEtMe)2; (Cp)Nb(=NtBu)(NEt2)2; (Cp)Nb(=NtBu)(NMe2)2; (Cp)Nb(=NtBu)(NEtMe)2; (Cp)Nb(═NiPr)(NEt2)2; (Cp)Nb(═NiPr)(NMe2)2; (Cp)Nb(═NiPr)(NEtMe)2; (Cp)Nb(═NC5H11)(NEt2)2; (Cp)Nb(═NC5H11)(NMe2)2; and (Cp)Nb(═NC5H11)(NEtMe)2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate.
    • 公开了在基板上形成含金属层的方法。 包含至少一种选自(Cp)V(= NtBu)(NEt2)2)的前体化合物的蒸气; (Cp)V(= NtBu)(NMe2)2; (Cp)V(= NtBu)(NEtMe)2; (Cp)V(= NiPr)(NEt2)2; (Cp)V(= NiPr)(NMe2)2; (Cp)V(= NiPr)(NEtMe)2; (Cp)V(= NC5H11)(NEt2)2; (Cp)V(= NC5H11)(NMe2)2; (Cp)V(= NC5H11)(NEtMe)2; (Cp)Nb(= NtBu)(NEt2)2; (Cp)Nb(= NtBu)(NMe2)2; (Cp)Nb(= NtBu)(NEtMe)2; (Cp)Nb(= NiPr)(NEt2)2; (Cp)Nb(= NiPr)(NMe2)2; (Cp)Nb(= NiPr)(NEtMe)2; (Cp)Nb(= NC5H11)(NEt2)2; (Cp)Nb(= NC5H11)(NMe2)2; 和(Cp)Nb(= NC5H11)(NEtMe)2。 提供至少一种选自臭氧和水的反应气体。 蒸汽和反应气体根据沉积工艺与基底反应,以在基底的至少一个表面上形成含金属层。