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1. 发明申请

US20180355478A1 METHODS FOR METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION USING SOLUTIONS OF INDIUM-ALKYL COMPOUNDS IN HYDROCARBONS 审中-公开
公开(公告)号：US20180355478A1
公开(公告)日：2018-12-13
申请号：US15778274
申请日：2016-11-24
申请人： Umicore AG & Co. KG
发明人： Jörg KOCH , Oliver BRIEL
IPC分类号： C23C16/40 , C30B25/02 , C23C16/448 , C07F5/00
CPC分类号： C23C16/407 , C07F5/00 , C23C16/301 , C23C16/4481 , C30B25/02 , C30B29/02 , C30B29/16 , C30B35/007
摘要： The invention relates to methods for producing an indium-containing layer by metal-organic vapor phase deposition, wherein the indium-containing layer is generated on a substrate in a reaction chamber, wherein the indium is delivered to the process in the form of an indium-containing precursor compound with the formula InR3, wherein the radicals R, independently of one another, are selected from alkyl radicals with 1 to 6 C atoms, characterized in that the delivery of the indium-containing precursor compound takes place in a solution that contains a solvent and the indium-containing precursor compound dissolved therein, wherein the solvent has at least one hydrocarbon with 1 to 8 carbon atoms.The invention also relates to a solution consisting of a compound of formula InR3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by metal-organic vapor deposition, and devices for executing the method.

2. 发明申请

US20180265977A1 DEPOSITION SYSTEM WITH VACUUM PRE-LOADED DEPOSITION HEAD 审中-公开
公开(公告)号：US20180265977A1
公开(公告)日：2018-09-20
申请号：US15458250
申请日：2017-03-14
申请人： Eastman Kodak Company
发明人： Todd Mathew Spath , Carolyn Rae Ellinger
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45544 , C23C16/403 , C23C16/407 , C23C16/4412 , C23C16/45519 , C23C16/45527 , C23C16/45551 , C23C16/45574 , C23C16/45595 , C23C16/4583 , C23C16/545
摘要： A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

3. 发明申请

US20180247816A1 FUNCTIONALIZED GRAPHENE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180247816A1
公开(公告)日：2018-08-30
申请号：US15958538
申请日：2018-04-20
申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人： Myung Mo SUNG , Kyu-Seok HAN
IPC分类号： H01L21/04 , C23C16/26 , C23C16/455 , H01L29/167 , H01L29/16
CPC分类号： H01L21/041 , C23C16/0209 , C23C16/0272 , C23C16/26 , C23C16/407 , C23C16/45525 , C23C28/00 , C23C28/04 , H01L21/306 , H01L29/16 , H01L29/1606 , H01L29/167 , H01L29/49 , H01L29/78684
摘要： A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.

4. 发明申请

US20180012759A1 TIN OXIDE THIN FILM SPACERS IN SEMICONDUCTOR DEVICE MANUFACTURING 审中-公开
公开(公告)号：US20180012759A1
公开(公告)日：2018-01-11
申请号：US15713377
申请日：2017-09-22
申请人： Lam Research Corporation
发明人： David Charles Smith , Richard Wise , Arpan Mahorowala , Patrick A. Van Cleemput , Bart J. van Schravendijk
IPC分类号： H01L21/033 , H01L21/02 , H01L21/027 , H01J37/32 , H01L21/67 , H01L21/311
CPC分类号： H01L21/0332 , C23C16/407 , C23C16/45542 , C23C16/45553 , C23C16/56 , H01J37/32091 , H01J37/32862 , H01J2237/3321 , H01J2237/3341 , H01J2237/3342 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31111 , H01L21/31122 , H01L21/31144 , H01L21/32137 , H01L21/32139 , H01L21/67069
摘要： Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.

5. 发明授权

US09815029B2 Method for preparing antibacterial and dust-removal membrane 有权
公开(公告)号：US09815029B2
公开(公告)日：2017-11-14
申请号：US15028854
申请日：2015-07-20
申请人： NANJING TECH UNIVERSITY
发明人： Zhaoxiang Zhong , Xibo Wu , Zhong Yao
IPC分类号： B01D67/00 , B01D53/22 , B01D71/02 , B01D69/02 , C23C16/455 , C23C16/56 , A61L9/16
CPC分类号： B01D67/0051 , A61L9/16 , A61L2209/14 , B01D53/228 , B01D67/0072 , B01D67/0076 , B01D67/0083 , B01D67/0088 , B01D67/009 , B01D69/02 , B01D69/105 , B01D71/024 , B01D71/025 , B01D2053/221 , B01D2257/91 , B01D2258/06 , B01D2323/286 , B01D2325/028 , B01D2325/48 , C23C16/0227 , C23C16/04 , C23C16/407 , C23C16/45555 , C23C16/56
摘要： This invention discloses a method for preparing an antibacterial and dust-removal membrane. The method comprises the following steps: depositing a layer of nano-ZnO on the immersed membrane surface as the seed crystal with the atomic layer deposition instrument (ALD instrument); vertically immersing the membrane covered with nano-ZnO layer in a hydrothermal reactor filled with crystal growth solution, heating it for a period of time, taking the membrane out and cooling it to the room temperate, and removing it from the substrate; finally, heating this membrane in a drier, and purging it with nitrogen to remove the paraffin within the membrane pore to obtain the porous membrane with nano-ZnO arrays growing on the surface.

6. 发明授权

US09685542B2 Atomic layer deposition of P-type oxide semiconductor thin films 有权
公开(公告)号：US09685542B2
公开(公告)日：2017-06-20
申请号：US14586282
申请日：2014-12-30
申请人： SnapTrack, Inc.
发明人： Kenji Nomura , John Hyunchul Hong
IPC分类号： H01L29/66 , H01L29/786 , H01L27/12 , H01L21/02 , C23C16/455 , C23C16/40
CPC分类号： H01L29/66969 , C23C16/407 , C23C16/45531 , C23C16/45534 , H01L21/02422 , H01L21/02535 , H01L21/02565 , H01L21/0262 , H01L27/1225 , H01L29/7869
摘要： Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.

7. 发明授权

US09677168B2 Touch panel and method for manufacturing the same 有权
公开(公告)号：US09677168B2
公开(公告)日：2017-06-13
申请号：US14048059
申请日：2013-10-08
申请人： TPK America, LLC
发明人： Brain Baker , Mondher Cherif , Ed Sasamoto
IPC分类号： C23C14/35 , C23C14/08 , C23C14/58 , C23C16/02 , C23C16/40 , G06F3/041 , C23C14/34
CPC分类号： C23C14/086 , B32B2457/208 , C23C14/3485 , C23C14/35 , C23C14/5873 , C23C16/0281 , C23C16/407 , G06F3/0414 , Y10T428/24851
摘要： A touch panel includes a first substrate; a mask layer formed on the first substrate, and on a marginal region thereof; a first high density conductive layer covering the mask layer and the first substrate. An adaptive method for manufacturing the touch panel incorporating a HiPIMS-assisted-DC sputtering process is provided as well.

8. 发明授权

US09546421B2 Method for forming film layer and substrate including the film layer 有权
标题翻译：用于形成膜层的方法和包括该膜层的基板
公开(公告)号：US09546421B2
公开(公告)日：2017-01-17
申请号：US14363784
申请日：2013-12-16
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
发明人： Hua Tang , Ran Zhao
IPC分类号： C23C16/44 , C23C16/40 , C23C14/08 , C23C14/22 , C23C4/00 , G02F1/1343 , C23C4/06 , C23C4/12 , C23C4/18 , C23C4/10 , C23C14/00 , C23C16/00 , C23C14/34 , C23C14/58 , C23C16/56 , C23C14/02 , B08B11/00 , B05D7/00 , B05D5/00 , B05D1/02 , B05D1/08 , B05D3/10 , B05D1/10 , G02F1/13
CPC分类号： C23C16/44 , B05D1/02 , B05D1/08 , B05D1/10 , B05D3/105 , B05D3/107 , B05D5/00 , B05D7/50 , B05D7/52 , B05D7/56 , C23C4/00 , C23C4/06 , C23C4/10 , C23C4/11 , C23C4/12 , C23C4/123 , C23C4/129 , C23C4/18 , C23C14/00 , C23C14/021 , C23C14/024 , C23C14/08 , C23C14/081 , C23C14/082 , C23C14/083 , C23C14/085 , C23C14/086 , C23C14/087 , C23C14/088 , C23C14/22 , C23C14/34 , C23C14/5873 , C23C16/00 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/403 , C23C16/404 , C23C16/405 , C23C16/406 , C23C16/407 , C23C16/408 , C23C16/409 , C23C16/56 , G02F1/13439 , G02F2001/1316 , Y10T428/24752
摘要： A method of forming a film layer and a substrate comprising the film layer to reduce occurrence of defects and improve the quality of the film layer are described. The method of forming a film layer comprises forming a plurality of sub-film layers of a same material overlapped with each other on a substrate by multiple steps to constitute the film layer, wherein each time a sub-film layer is formed, the newly-formed sub-film layer is cleaned immediately. The substrate comprises a film layer formed by the above method.
摘要翻译：描述了形成膜层的方法和包括该膜层的基板以减少缺陷的发生和提高膜层的质量。形成膜层的方法包括在基板上通过多个步骤在多个步骤上形成彼此重叠的相同材料的多个子膜层以构成膜层，其中每次形成子膜层时，形成的子膜层立即进行清洗。基板包括通过上述方法形成的膜层。

9. 发明授权

US09506144B2 Method for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US09506144B2
公开(公告)日：2016-11-29
申请号：US13487702
申请日：2012-06-04
申请人： Ching-Shun Ku , Hsin-Yi Lee
发明人： Ching-Shun Ku , Hsin-Yi Lee
IPC分类号： C23C16/00 , C23C16/40 , C23C16/455
CPC分类号： C23C16/407 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/45534
摘要： A method for atomic layer deposition includes providing a substrate in a reaction chamber; and performing at least one atomic layer deposition cycle to form a film on a surface of the substrate. The atomic layer deposition cycle includes passing first precursors into the reaction chamber to let first atoms included in the first precursors combine with reaction sites of the substrate; and passing second precursors into the reaction chamber to let second atoms included in the second precursors combine with the reaction sites uncombined with the first atoms or substitute at least part of the first atoms to combine with the reaction sites of the substrate. The above-mentioned method for atomic layer deposition is capable of preparing large area and uniformity of doping film without annealing process or with low temperature annealing process.
摘要翻译：原子层沉积的方法包括在反应室中提供衬底; 以及执行至少一个原子层沉积循环以在所述衬底的表面上形成膜。原子层沉积循环包括使第一前体进入反应室以使包含在第一前体中的第一个原子与底物的反应位点相结合; 并将第二前体通入反应室以使包含在第二前体中的第二个原子与未与第一个原子结合的反应位点结合，或者将至少部分第一个原子取代与底物的反应位点结合。上述原子层沉积的方法能够在没有退火工艺或低温退火工艺的情况下制备掺杂膜的大面积和均匀性。

10. 发明授权

US09502242B2 Indium gallium zinc oxide layers for thin film transistors 有权
标题翻译：用于薄膜晶体管的铟镓锌氧化物层
公开(公告)号：US09502242B2
公开(公告)日：2016-11-22
申请号：US14599696
申请日：2015-01-19
申请人： Applied Materials, Inc.
发明人： Tae Kyung Won , John M. White , Soo Young Choi , Jung-Chi (Eric) Lu
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/509
CPC分类号： H01L21/02565 , C23C16/407 , C23C16/45574 , C23C16/5096 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/0262 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In one embodiment, a method is provided for forming an IGZO active layer on a dielectric surface using a PECVD deposition process. In one embodiment, a method is provided for pretreating and passivating the dielectric surface for receiving the PECVD formed IGZO layer. In another embodiment, a method is provided for treating a PECVD formed IGZO layer after depositing said layer. In another embodiment, a method is provided for forming a multi-layer or complex layering structure of IGZO, within a PECVD processing chamber, for optimizing TFT electrical characteristics such as carrier density, contact resistance, and gate dielectric interfacial properties. In yet another embodiment, a method is provided for forming integrated layers for a TFT including IGZO within an in-situ environment of a cluster tool.
摘要翻译：本公开的实施例通常提供了用于在薄膜晶体管（TFT）器件内形成IGZO有源层的方法和装置。在一个实施例中，提供了一种使用PECVD沉积工艺在电介质表面上形成IGZO有源层的方法。在一个实施例中，提供了一种用于预处理和钝化用于接收形成PECVD的IGZO层的电介质表面的方法。在另一个实施例中，提供了一种在沉积所述层之后处理形成的PECVD层的方法。在另一个实施例中，提供了一种用于在PECVD处理室内形成IGZO的多层或复合分层结构的方法，用于优化诸如载流子密度，接触电阻和栅介质界面性质的TFT电特性。在另一个实施例中，提供了一种用于在集群工具的原位环境内形成用于包括IGZO的TFT的集成层的方法。

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