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    • 5. 发明授权
    • Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same
    • 用于Q开关激光器和微型激光器的异质单钒酸盐晶体及其形成方法
    • US09493887B1
    • 2016-11-15
    • US14497949
    • 2014-09-26
    • Clemson University
    • Joseph W. KolisColin D. McMillenJ. Matthew Mann
    • C30B7/10C30B7/00
    • C30B7/10C30B7/00C30B29/30
    • Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a vanadate-based activator region and a vanadate-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing layers on a host. A YVO4 host material can be doped in one region with a suitable active lasing ion and can be formed with another region that is doped with a saturable absorber. Regions can be formed with controlled thickness. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
    • 公开了用于激光腔的异质晶体和形成晶体的方法。 晶体可以是含有基于钒酸盐的活化剂区域和基于钒酸盐的Q开关的单片晶体。 公开的方法包括用于在主体上生长不同层的水热生长技术。 YVO4主体材料可以掺杂在具有合适的有源激光离子的一个区域中,并且可以用掺杂有可饱和吸收体的另一区域形成。 可以形成具有受控厚度的区域。 形成后,可以在每个端部切割,抛光和涂覆镜面膜以用于激光腔,以使用高频脉冲模式提供高功率发射的短脉冲。