专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

US20240240355A1 METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED GATE BIPOLAR TRANSISTORS 审中-公开
公开(公告)号：US20240240355A1
公开(公告)日：2024-07-18
申请号：US18411957
申请日：2024-01-12
申请人： GlobalWafers Co., Ltd.
发明人： Carissima Marie Hudson , JaeWoo Ryu , Chi-Yung Chen , Chih-Hsun Wei , Feng-Chien Tsai , Chung-Chi Hsiao
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/30 , C30B30/04 , C30B31/04
CPC分类号： C30B29/06 , C30B15/002 , C30B15/14 , C30B15/203 , C30B15/30 , C30B30/04 , C30B31/04
摘要： Methods for producing single crystal silicon wafers for use in insulated gate bipolar transistors are disclosed. The methods may involve determining the radial profile of a ratio between (i) a growth velocity, v, and (ii) an axial temperature gradient, G for an ingot with relatively low oxygen. Based on the radial v/G profile, a nitrogen concentration which widens the v/G window to produce Perfect Silicon free of COP and gate oxide failures may be selected.

2. 发明授权

US11932962B2 Systems and methods for production of silicon using a horizontal magnetic field 有权
公开(公告)号：US11932962B2
公开(公告)日：2024-03-19
申请号：US17658049
申请日：2022-04-05
申请人： GlobalWafers Co., Ltd.
发明人： JaeWoo Ryu , JunHwan Ji , WooJin Yoon , Richard J. Phillips , Carissima Marie Hudson
IPC分类号： C30B15/10 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04
CPC分类号： C30B15/10 , C30B15/20 , C30B15/30 , C30B29/06 , C30B30/04
摘要： A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

3. 发明公开

US20240026565A1 METHOD FOR MEASURING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT, METHOD FOR CONTROLLING DISTANCE BETWEEN LOWER END SURFACE OF HEAT SHIELDING MEMBER AND SURFACE OF RAW MATERIAL MELT AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL 审中-公开
公开(公告)号：US20240026565A1
公开(公告)日：2024-01-25
申请号：US18037647
申请日：2021-10-11
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Kosei SUGAWARA , Takaki IMAI , Masahiro AKIBA , Katsuyuki KITAGAWA
IPC分类号： C30B15/26 , C30B29/06 , C30B30/04 , C30B15/14
CPC分类号： C30B15/26 , C30B29/06 , C30B30/04 , C30B15/14
摘要： A method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, the method including providing the member being located above the melt, when a silicon single crystal is pulled by the Czochralski method while a magnetic field is applied to the melt in a crucible, the method including: forming a through-hole in the member; measuring distance between the member and the melt surface, and observing position of mirror image of the through-hole with fixed point observation apparatus, the mirror image being reflected on the melt surface; then measuring a moving distance of the mirror image, and calculating distance between the member and the melt surface from a measured value and the moving distance of the mirror image, during the pulling of the crystal. The distance between the member and the melt can be precisely measured by the method.

4. 发明授权

US11781242B2 Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals 有权
公开(公告)号：US11781242B2
公开(公告)日：2023-10-10
申请号：US16971441
申请日：2019-02-27
申请人： SUMCO CORPORATION
发明人： Hideki Sakamoto , Wataru Sugimura , Ryusuke Yokoyama , Naoki Matsushima
IPC分类号： C30B29/06 , C30B15/20 , C30B30/04 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , C30B15/206 , C30B30/04
摘要： A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

5. 发明申请

US20190127882A1 SEPARATE VESSEL METAL SHIELDING METHOD FOR MAGNETIC FLUX IN DIRECTIONAL SOLIDIFICATION FURNACE 审中-公开
公开(公告)号：US20190127882A1
公开(公告)日：2019-05-02
申请号：US15797855
申请日：2017-10-30
申请人： United Technologies Corporation
发明人： Joseph V. Mantese , Ryan C. Breneman , Thomas Anthony Rebbecchi , Andrew Boyne , John Joseph Marcin , Dustin W. Davis , David Ulrich Furrer , James Tilsley Auxier
IPC分类号： C30B30/04 , C30B21/02 , F27D11/06 , H05B6/06 , H05B6/10
CPC分类号： C30B30/04 , B22D27/02 , B22D27/045 , C30B21/02 , F27B14/061 , F27B14/14 , F27D11/06 , F27D2099/0015 , H05B6/067 , H05B6/105
摘要： An induction furnace assembly comprising a chamber having a mold; a primary inductive coil coupled to the chamber; a susceptor surrounding the chamber between the primary inductive coil and the mold; and a shield material contained in a reservoir coupled to or proximate the mold between the susceptor and the mold; the shield material configured to attenuate a portion of an electromagnetic flux generated by the primary induction coil that is not attenuated by the susceptor.

6. 发明申请

US20180244408A1 Modular Space Tether 审中-公开
公开(公告)号：US20180244408A1
公开(公告)日：2018-08-30
申请号：US15753793
申请日：2016-08-20
申请人： Christopher Malek , Nigel E. Sharp , Annemarie Heijna , Philip Chow
发明人： Christopher Malek , Nigel E. Sharp , Annemarie Heijna , Philip Chow
IPC分类号： B64G1/64 , B64G1/58 , G01S19/13 , G01S11/02 , B66D1/12
CPC分类号： C30B15/02 , B64G1/10 , B64G1/58 , B64G1/648 , B64G2001/1092 , B66D1/12 , C30B15/20 , C30B15/32 , C30B29/06 , C30B30/04 , C30B35/005 , G01P15/18 , G01S11/02 , G01S19/13
摘要： A tether for joining objects in space by centripetal force has a modular architecture. The modular architecture facilitates the deployment of the tether by facilitating its transport into space as unassembled modular components and its assembly in situ, after the components have been transported. The modular architecture also facilitates it repair, modification, and disassembly in situ. More particularly, the modular tether has design features that enable its assembly, repair, modification, and/or disassembly in situ while the modular tether remains under tension, i.e., while the modular tether continues to perform its function of joining two or more objects by the application of centripetal force. The modular architecture also enables new tether modalities, e.g., a tensile strength modality, a winch modality, a tension monitoring modality, a repair state modality, a situational awareness modality, and a temperature control modality.

7. 发明申请

US20180237940A1 SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD 审中-公开
公开(公告)号：US20180237940A1
公开(公告)日：2018-08-23
申请号：US15758023
申请日：2016-08-23
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Kiyotaka TAKANO
IPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , H01F6/04 , H01F6/06
CPC分类号： C30B15/305 , C30B15/14 , C30B29/06 , C30B29/42 , C30B30/04 , H01F6/04 , H01F6/06
摘要： A single-crystal pulling apparatus including a pulling furnace containing a crucible containing molten single crystal material, and a magnetic field generation device that is arranged around the furnace, has superconducting coils, and generates a magnetic field distribution. A magnetic flux density distribution on an X axis, which is a direction of magnetic force lines at the central axis in a horizontal plane, is a convex upward distribution, and a magnetic flux density on the X axis becomes 80% or less of a magnetic flux density set value at a crucible wall. Simultaneously, a magnetic flux density distribution on a Y axis, orthogonal to the X axis, is a convex downward distribution, and a magnetic flux density on the Y axis becomes 140% or more of the set value at the crucible wall when the magnetic flux density at the central axis in the horizontal plane is the set value.

8. 发明授权

US09951440B2 Methods for producing low oxygen silicon ingots 有权
公开(公告)号：US09951440B2
公开(公告)日：2018-04-24
申请号：US14893280
申请日：2014-05-22
申请人： SunEdison Semiconductor Limited
发明人： Soubir Basak , Carissima Marie Hudson , Gaurab Samanta , Jae-Woo Ryu , Hariprasad Sreedharamurthy , Kirk D. McCallum , HyungMin Lee
IPC分类号： B32B3/02 , C30B15/20 , C30B15/30 , C30B29/06 , C30B15/04 , C30B30/04 , H01L29/165 , H01L29/167 , H01L29/739
CPC分类号： C30B15/20 , C30B15/04 , C30B15/30 , C30B15/305 , C30B29/06 , C30B30/04 , H01L29/165 , H01L29/167 , H01L29/7393
摘要： An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

9. 发明授权

US09938634B2 Method of producing silicon single crystal 有权
公开(公告)号：US09938634B2
公开(公告)日：2018-04-10
申请号：US14787368
申请日：2014-05-08
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Masahiro Sakurada , Junya Tokue , Ryoji Hoshi , Izumi Fusegawa
IPC分类号： C30B15/04 , C30B29/06 , C30B15/30 , C30B30/04
CPC分类号： C30B15/04 , C30B15/305 , C30B29/06 , C30B30/04
摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.

10. 发明申请

US20160068992A1 METHOD OF PRODUCING SILICON SINGLE CRYSTAL 有权
标题翻译：生产硅单晶的方法
公开(公告)号：US20160068992A1
公开(公告)日：2016-03-10
申请号：US14787368
申请日：2014-05-08
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Masahiro SAKURADA , Junya TOKUE , Ryoji HOSHI , Izumi FUSEGAWA
IPC分类号： C30B15/04 , C30B30/04 , C30B29/06
CPC分类号： C30B15/04 , C30B15/305 , C30B29/06 , C30B30/04
摘要： A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.
摘要翻译：一种磷掺杂硅单晶的制造方法，其特征在于，包括通过磁场施加切克劳斯基（MCZ）法从掺杂有磷的硅熔融物中提取磷掺杂的硅单晶，其中磷被掺杂，使得磷磷掺杂硅单晶为2×1016原子/ cm3以上，并且以2000高斯或更高的中心磁场强度将水平磁场施加到硅熔体，使得将产生的磷掺杂硅单晶氧浓度为1.6×1018原子/ cm3（ASTM'79）以上。一种重掺杂磷，氧浓度为1.6×1018原子/ cm3（ASTM'79）以上的硅单晶的制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式