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1. 发明申请

US20170239386A1 MAGNESIUM SINGLE CRYSTAL FOR BIOMEDICAL APPLICATIONS AND METHODS OF MAKING SAME 审中-公开
公开(公告)号：US20170239386A1
公开(公告)日：2017-08-24
申请号：US15504767
申请日：2015-08-18
申请人： University Of Cincinnati
发明人： Vesselin N. Shanov , Vibhor Chaswal , Pravahan Salunke , Madhura Joshi , Guangqi Zhang , Mark J. Schulz , Sergey N. Yarmolenko , Doug Nienaber
IPC分类号： A61L27/04 , C30B11/02 , C30B29/02 , A61F2/30 , C25D11/30 , A61B17/80 , A61B17/86 , A61L31/02 , C30B33/00
CPC分类号： A61L27/047 , A61B17/80 , A61B17/86 , A61B2017/00526 , A61F2/3099 , A61F2002/0858 , A61L27/58 , A61L31/02 , A61L31/022 , A61L31/148 , C25D11/30 , C30B11/00 , C30B11/02 , C30B13/00 , C30B15/00 , C30B23/00 , C30B25/00 , C30B29/02 , C30B33/005
摘要： A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.

2. 发明授权

US09227848B2 Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby 有权
标题翻译：由此获得石墨烯/ SiC复合材料和石墨烯/ SiC复合材料的方法
公开(公告)号：US09227848B2
公开(公告)日：2016-01-05
申请号：US13354628
申请日：2012-01-20
申请人： Michiko Kusunoki , Wataru Norimatsu
发明人： Michiko Kusunoki , Wataru Norimatsu
IPC分类号： C30B1/02 , C01B31/04 , B82Y30/00 , B82Y40/00 , C30B29/02 , C30B29/36 , C30B33/00
CPC分类号： C01B31/0461 , B82Y30/00 , B82Y40/00 , C01B32/188 , C01B2204/04 , C30B29/02 , C30B29/36 , C30B33/005 , Y10S977/734 , Y10T428/24355 , Y10T428/26
摘要： A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
摘要翻译：提供一种有利地生产石墨烯/ SiC复合材料的方法，其中在SiC单晶衬底上形成原子层平坦的大面积石墨烯层。一种生产石墨烯/ SiC复合材料的方法，其中在SiC单晶衬底上形成至少一个石墨烯层，包括以下步骤：除去由自然氧化形成的氧化膜并覆盖SIC单晶的表面从而暴露SiC单晶衬底的Si表面，在氧气氛下暴露Si表面，加热SiC单晶衬底，从而在SiC单晶衬底的表面上形成SiO 2层，并加热SiC单晶在其上形成有SiO 2层的真空下形成晶体基板。

3. 发明申请

US20140134851A1 OZONE GAS GENERATION PROCESSING APPARATUS, METHOD OF FORMING SILICON OXIDE FILM, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：臭氧发生加工装置，形成硅氧烷膜的方法和评价硅单晶的方法
公开(公告)号：US20140134851A1
公开(公告)日：2014-05-15
申请号：US14234435
申请日：2012-07-25
申请人： Fumitaka Kume
发明人： Fumitaka Kume
IPC分类号： H01L21/02 , C23C16/448
CPC分类号： H01L21/02238 , C23C16/448 , C30B29/06 , C30B33/005 , H01L21/02164 , H01L22/14
摘要： An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided.
摘要翻译：包括紫外线光源和晶片放置部分的臭氧气体生成处理装置通过在含氧气氛中照射来自光源的紫外线而产生臭氧气体，并且利用臭氧气体处理晶片放置部分上的晶片臭氧气体发生处理装置包括允许产生的臭氧气体通过的遮光板，并且阻挡光源与放置在晶片放置部分上的晶片之间的紫外线。臭氧气体生成处理装置和氧化膜硅膜的形成方法可以进行调整，以使形成在晶片表面上的氧化膜更薄，当处理时晶片表面不被紫外线损坏，以及评估方法硅单晶晶片，获得更稳定的CV特性测量值。

4. 发明授权

US08252700B2 Method of heat treating silicon wafer 有权
标题翻译：硅晶片热处理方法
公开(公告)号：US08252700B2
公开(公告)日：2012-08-28
申请号：US12656232
申请日：2010-01-21
申请人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
发明人： Takeshi Senda , Hiromichi Isogai , Eiji Toyoda , Kumiko Murayama , Koji Araki , Tatsuhiko Aoki , Haruo Sudo , Koji Izunome , Susumu Maeda , Kazuhiko Kashima
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C30B33/02 , C30B29/06 , C30B33/005 , H01L21/3225 , H01L21/324 , H01L21/67109
摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.
摘要翻译：在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理，在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒，因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

5. 发明授权

US08227069B2 Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby 有权
标题翻译：由此获得石墨烯/ SiC复合材料和石墨烯/ SiC复合材料的方法
公开(公告)号：US08227069B2
公开(公告)日：2012-07-24
申请号：US13032884
申请日：2011-02-23
申请人： Michiko Kusunoki , Wataru Norimatsu
发明人： Michiko Kusunoki , Wataru Norimatsu
IPC分类号： B32B3/00 , B32B5/00
CPC分类号： C01B31/0461 , B82Y30/00 , B82Y40/00 , C01B32/188 , C01B2204/04 , C30B29/02 , C30B29/36 , C30B33/005 , Y10S977/734 , Y10T428/24355 , Y10T428/26
摘要： A graphene/SiC composite material is provided in which a large-area graphene layer that is flat at an atomic level is formed on an SiC single crystal substrate. The process for producing the graphene/SiC composite material includes the steps of removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing an Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming an SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
摘要翻译：提供了一种石墨烯/ SiC复合材料，其中在SiC单晶衬底上形成原子级平坦的大面积石墨烯层。制造石墨烯/ SiC复合材料的方法包括以下步骤：除去由自然氧化形成的氧化膜，并覆盖SiC单晶衬底的表面，从而暴露SiC单晶衬底的Si表面，加热SiC 在氧气氛下暴露Si表面的单晶衬底，从而在SiC单晶衬底的表面上形成SiO 2层，并在其上形成有SiO 2层的真空下加热SiC单晶衬底。

6. 发明申请

US20100214880A1 REINFORCED MICRO-MECHANICAL PART 有权
标题翻译：增强微机械部件
公开(公告)号：US20100214880A1
公开(公告)日：2010-08-26
申请号：US11994234
申请日：2006-06-21
申请人： René Rappo , Marc Lippuner , Lionel Paratte , Thierry Conus
发明人： René Rappo , Marc Lippuner , Lionel Paratte , Thierry Conus
IPC分类号： G04B15/14 , B44C1/22
CPC分类号： G04D3/0074 , B81C1/00682 , C30B29/06 , C30B33/005 , G04B13/022 , G04B15/14 , G04B17/066 , G04D3/0069
摘要： The micro-mechanical part, for example a horological movement part, includes a silicon core (1) all or part of the surface (3) of which is coated with a thick amorphous material (2). This material is preferably silicon dioxide and has a thickness which is five times greater than the thickness of native silicon dioxide.
摘要翻译：微机械部件例如钟表运动部件包括硅芯（1），其全部或部分表面（3）涂覆有厚的无定形材料（2）。该材料优选为二氧化硅，其厚度为天然二氧化硅的厚度的5倍。

7. 发明申请

US20070292339A1 Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them 审中-公开
标题翻译：高比例的氧化铁晶须，高比例的氧化钛晶须，包含这些及其生产工艺的结构
公开(公告)号：US20070292339A1
公开(公告)日：2007-12-20
申请号：US10594238
申请日：2005-03-18
申请人： Kenji Kubomura , Morihiro Okada , Ikuo Jutsuhara
发明人： Kenji Kubomura , Morihiro Okada , Ikuo Jutsuhara
IPC分类号： C30B29/62 , C01G23/04 , C01G49/02
CPC分类号： C30B33/005 , B01J21/063 , B01J23/745 , B01J35/026 , B01J35/06 , B82Y30/00 , C01G23/07 , C01G49/02 , C01P2004/03 , C01P2004/10 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C30B29/16 , C30B29/62
摘要： An iron oxide whisker of high aspect ratio or titanium oxide whisker of high aspect ratio that is useful as a magnetic material for magnetic recording, a part of micromachine, etc.; and a structure having such a whisker erected on a basal plate that is useful as a catalyst, etc. There is provided an iron oxide whisker of 5 nm to 2 μm diameter and ≧20 aspect ratio wherein the content of non-iron metal atoms is ≦10 at %, and provided a titanium oxide whisker of 5 nm to 20 μm diameter and ≧5 aspect ratio wherein the content of non-titanium metal atoms is ≦10 at %. Further, there is provided a structure, such as a basal plate having these whiskers densely erected thereon. These whiskers excel in magnetic properties, etc., and the structures having these erected exert excellent characteristics, such as large contact area as a catalyst and freedom from clogging, and hence are useful. In the production of these oxide whiskers, an iron or titanium material is brought into contact with an oxidative atmosphere so as to react the surface iron or titanium atoms with oxygen brought into contact therewith at high temperature, thereby attaining growth as oxide whiskers.
摘要翻译：高纵横比的氧化铁晶须或高纵横比的氧化钛晶须可用作用于磁记录的磁性材料，微机械的一部分等; 以及具有竖立在可用作催化剂等的基板上的这种晶须的结构体。提供了直径为5nm至2μm，> = 20纵横比的氧化铁晶须，其中非铁金属原子的含量 <10原子％，并且提供了直径为5nm至20μm，> = 5纵横比的钛氧化物晶须，其中非钛金属原子的含量<10原子％。此外，提供了一种结构，例如具有密实地竖立在其上的这些晶须的基板。这些晶须在磁特性等方面优异，并且具有这些直立的结构发挥优异的特性，例如作为催化剂的大接触面积并且没有堵塞，因此是有用的。在这些氧化物晶须的制造中，使铁或钛材料与氧化气氛接触，以使表面铁或钛原子与高温下与其接触的氧反应，从而获得作为氧化物晶须的生长。

8. 发明授权

US07129123B2 SOI wafer and a method for producing an SOI wafer 有权
标题翻译： SOI晶片和SOI晶片的制造方法
公开(公告)号：US07129123B2
公开(公告)日：2006-10-31
申请号：US10500580
申请日：2003-10-24
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： H01L21/84 , H01L31/36 , C30B15/20
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide film or directly, and forming an SOI wafer by delaminating by heat treatment a part of the bond wafer at the ion-implanted layer, the bond wafer is a silicon wafer that consists of a silicon single crystal grown by Czochralski method, that is occupied by N region outside OSF generated in a ring shape and that has no defect region detected by Cu deposition method. Thereby, even an extremely thin SOI layer having a thickness of 200 nm or less, can provide an SOI wafer that has an excellent electric property without micro pits caused by acid cleaning, and can be produced without increasing the number of processes.
摘要翻译：在制造SOI晶片的方法中，包括从接合晶片表面注入离子以在晶片内部形成离子注入层的步骤，通过氧化膜或直接键合离子注入的接合晶片表面和基底晶片的表面，并且通过在离子注入层处热处理接合晶片的一部分来形成SOI晶片，接合晶片是由通过Czochralski方法生长的硅单晶组成的硅晶片，其被N区域外部占据 OSF以环形形成，并且没有通过Cu沉积法检测到缺陷区域。因此，即使是厚度为200nm以下的极薄的SOI层也能够提供具有优异的电性能的SOI晶片，而不会产生由酸清洗引起的微凹坑，并且可以在不增加工艺数的情况下制造。

9. 发明申请

US20060228492A1 Method for manufacturing SIMOX wafer 审中-公开
标题翻译：制造SIMOX晶圆的方法
公开(公告)号：US20060228492A1
公开(公告)日：2006-10-12
申请号：US11100610
申请日：2005-04-07
申请人： Yoshiro Aoki , Mitsuru Sudo , Tetsuya Nakai
发明人： Yoshiro Aoki , Mitsuru Sudo , Tetsuya Nakai
IPC分类号： C23C14/00 , B05D3/02
CPC分类号： C23C8/80 , C23C8/12 , C23C14/48 , C30B29/06 , C30B33/005 , H01L21/76243
摘要： In the method for manufacturing a SIMOX wafer, oxygen ions are implanted into a silicon wafer, then the silicon wafer is subjected to a prescribed heat treatment so as to form a buried oxide layer in the silicon wafer. The prescribed heat treatment includes: a step of ramping up a temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; either or both of a step of oxidizing the silicon wafer in a high oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of 5% or more and a step of annealing the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%; and a step of ramping down the temperature of the silicon wafer in a low oxygen partial pressure gas atmosphere having an oxygen partial pressure ratio of less than 5%. A hydrogen chloride gas is mixed with the low oxygen partial pressure gas having an oxygen partial pressure ratio of less than 5% in at least one step from among the ramp-up step, the anneal step and the ramp-down step.
摘要翻译：在制造SIMOX晶片的方法中，将氧离子注入到硅晶片中，然后对硅晶片进行规定的热处理，以在硅晶片中形成掩埋氧化物层。规定的热处理包括：在氧分压比小于5％的低氧分压气氛中升高硅晶片的温度的步骤; 在氧分压比为5％以上的高氧分压气氛中氧化硅晶片的步骤中的一个或两个，以及在具有氧部分的低氧分压气氛中退火硅晶片的步骤压力比小于5％; 以及在氧分压比小于5％的低氧分压气体气氛中降低硅晶片的温度的步骤。从斜坡上升步骤，退火步骤和斜坡下降步骤至少一个步骤，将氯化氢气体与氧分压比小于5％的低氧分压气体混合。

10. 发明申请

US20050164516A1 Method and structure for graded gate oxides on vertical and non-planar surfaces 有权
标题翻译：垂直和非平面表面上分级栅极氧化物的方法和结构
公开(公告)号：US20050164516A1
公开(公告)日：2005-07-28
申请号：US10986984
申请日：2004-11-12
申请人： Samir Chaudhry , Pradip Roy
发明人： Samir Chaudhry , Pradip Roy
IPC分类号： C30B33/00 , H01L21/28 , H01L21/316 , H01L21/321 , H01L21/336 , H01L29/51 , H01L29/78 , H01L21/31 , H01L21/469
CPC分类号： H01L29/66666 , C30B29/06 , C30B33/005 , H01L21/02238 , H01L21/02255 , H01L21/28167 , H01L21/28194 , H01L21/31662 , H01L21/32105 , H01L29/513 , H01L29/518 , H01L29/7827
摘要： A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphous and notably dense. The oxide layer is a graded growth oxide layer including a composite of a first oxide portion formed at a relatively low temperature below the viscoelastic temperature of the oxide film and a second oxide portion formed at a relatively high temperature above the viscoelastic temperature of the oxide film. The process for forming the oxide layer includes thermally oxidizing at a first temperature below the viscoelastic temperature of the film, and slowly ramping up the temperature to a second temperature above the viscoelastic temperature of the film and heating at the second temperature. After the second, high temperature oxidation above the viscoelastic temperature, the structure is then slowly cooled under gradual, modulated cooling conditions.
摘要翻译：在垂直非平面半导体表面上形成氧化物层的方法提供了具有粗糙度小于3埃的原始界面的低应力氧化物层。氧化物层包括基本无定形且特别密集的部分。氧化物层是分级生长氧化物层，其包括在低于氧化膜的粘弹性温度的较低温度下形成的第一氧化物部分和在高于氧化膜的粘弹性温度的较高温度下形成的第二氧化物部分的复合物。用于形成氧化物层的方法包括在低于膜的粘弹性温度的第一温度下热氧化，并将温度缓慢升高到高于膜的粘弹性温度的第二温度并在第二温度下加热。第二次，高于粘弹性温度的高温氧化，然后在逐渐调节的冷却条件下缓慢冷却结构。

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