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    • 10. 发明申请
    • NON-INVASIVE PRE-BOND TSV USING RING OSCILLATORS AND MULTIPLE VOLTAGE LEVELS
    • 使用环形振荡器和多个电压等级的非入门式前缀TSV
    • US20170003340A1
    • 2017-01-05
    • US15266744
    • 2016-09-15
    • DUKE UNIVERSITY
    • KRISHNENDU CHAKRABARTYSERGEJ DEUTSCH
    • G01R31/28
    • G01R31/2853G01R31/2601G01R31/2894G01R31/318558
    • A design for test (DfT) architecture is provided that enables pre-bond parametric testing of through-silicon vias (TSVs). A grouping of N number of input/output (I/O) segments are configured to receive a test signal in a feedback loop, where each I/O segment includes one or more buffers (or inverters) and a TSV connected at one end to the one or more buffers. The TSV acts as a shunt-connected capacitor—when defect free—and includes a load resistance when the TSV contains a defect. Each I/O segment can also include one or two multiplexers to control whether the I/O segment receives a test or functional signal and, optionally, whether the I/O segment is bypassed or included in the ring oscillator. The varying loads caused by the defects cause variations in the delay across the buffers (or inverters) of an I/O segment that can be detected in the output signal.
    • 提供了一种用于测试(DfT)架构的设计,可以实现通硅通孔(TSV)的预键参数测试。 N个输入/输出(I / O)段的分组被配置为在反馈回路中接收测试信号,其中每个I / O段包括一个或多个缓冲器(或反相器)和一端连接到一个TSV 一个或多个缓冲区。 当TSV包含缺陷时,TSV充当分流连接的电容器 - 当缺陷自由时包含负载电阻。 每个I / O段还可以包括一个或两个多路复用器,以控制I / O段是否接收到测试或功能信号,以及可选地,该I / O段是否被绕过或包含在环形振荡器中。 由缺陷引起的变化的负载导致可在输出信号中检测到的I / O段的缓冲器(或反相器)之间的延迟变化。