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    • 4. 发明授权
    • Amplification method for photoresist exposure in semiconductor chip manufacturing
    • 半导体芯片制造中光致抗蚀剂曝光的放大方法
    • US09104113B2
    • 2015-08-11
    • US13735232
    • 2013-01-07
    • International Business Machines Corporation
    • Richard S. WiseDaniel A. Corliss
    • G03F7/20
    • G03F7/70325G03F7/2004G03F7/2041G03F7/70058G03F7/70308G03F7/70375
    • An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.
    • 沿着与EUV光致抗蚀剂层和下层之间的界面垂直的方向通过极紫外(EUV)光致抗蚀剂层施加电场。 二次电子和热电子沿着电场的方向被加速,并且在与用于化学反应的光致抗蚀剂材料相互作用之前以方向性行进。 方向性增加了电子光酸捕获的效率,降低了暴露所需的EUV剂量。 此外,这种方向性减小了二次和热电子的横向扩散,从而减少了图像的模糊并改善了形成在EUV光致抗蚀剂层中的特征边缘的图像分辨率。 可以通过在静电卡盘和放置在EUV光致抗蚀剂层上的导电板上施加直流(DC)和/或交流(AC)偏置电压来产生电场,所述导电板具有用于使EUV辐射通过的孔。
    • 5. 发明授权
    • Process for production of photoresist pattern
    • 光刻胶图案的生产工艺
    • US08895235B2
    • 2014-11-25
    • US13582336
    • 2011-03-01
    • Kosei UenoHiroaki Misawa
    • Kosei UenoHiroaki Misawa
    • G03F7/20H01L21/027G03F1/50
    • H01L21/0274G03F1/50G03F7/2014G03F7/7035G03F7/70375G03F7/70408
    • Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.
    • 公开了一种制备光致抗蚀剂图案的方法,包括以下步骤:制备包含金属纳米结构的光掩模,所述金属纳米结构在其上布置有金属膜,并可在掩模基板上产生等离子体共振; 制备形成在抗蚀剂基板的表面上且对具有波长(X)的光敏感的光致抗蚀剂膜; 使光掩模与光致抗蚀剂膜接触; 并且将光致抗蚀剂膜曝光于比波长(X)长的波长(Y)的光并且短于金属纳米结构的等离子体共振带的峰值波长,从而将金属膜的图案转印在 光掩模到光刻胶膜上。
    • 9. 发明申请
    • PROCESS FOR PRODUCTION OF PHOTORESIST PATTERN
    • 生产光电子图案的工艺
    • US20130017499A1
    • 2013-01-17
    • US13582336
    • 2011-03-01
    • Kosei UenoHiroaki Misawa
    • Kosei UenoHiroaki Misawa
    • G03F7/20G03B27/54B82Y30/00
    • H01L21/0274G03F1/50G03F7/2014G03F7/7035G03F7/70375G03F7/70408
    • Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.
    • 公开了一种制备光致抗蚀剂图案的方法,包括以下步骤:制备包含金属纳米结构的光掩模,所述金属纳米结构在其上布置有金属膜,并可在掩模基板上产生等离子体共振; 制备形成在抗蚀剂基板的表面上且对具有波长(X)的光敏感的光致抗蚀剂膜; 使光掩模与光致抗蚀剂膜接触; 并且将光致抗蚀剂膜曝光于比波长(X)长的波长(Y)的光并且比金属纳米结构的等离子体共振带的峰值波长短,从而将金属膜的图案转印在 光掩模到光刻胶膜上。