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    • 5. 发明授权
    • Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
    • 液体回收装置,曝光装置,曝光方法及装置制造方法
    • US08867017B2
    • 2014-10-21
    • US13751469
    • 2013-01-28
    • Nikon Corporation
    • Hideaki HaraHiroaki TakaiwaDai Arai
    • G03F7/20
    • G03F7/70341G03F7/2041G03F7/70533G03F7/70866G03F7/70933G03F7/70991
    • A liquid immersion exposure apparatus that exposes a substrate via a projection optical system and liquid includes a movable member having an upper surface, a part of which holds the substrate. A liquid immersion system that has a supply port and a recovery port supplies the liquid to a space between the projection optical system and the upper surface via the supply port of a supply path and recovers the liquid of a liquid immersion region formed in the space via the recovery port of a recovery path. A flow path is connected to the supply path between the supply port and a source of the liquid, the flow path permitting flow therethrough to remove liquid that remains in the supply path, the liquid that remains in the supply path having been supplied from the source of the liquid without being discharged from the supply port.
    • 通过投影光学系统和液体露出基板的液浸曝光装置包括具有上表面的可动件,其一部分保持基板。 具有供给口和回收口的液浸系统经由供给路径的供给口将液体供给到投影光学系统与上表面之间的空间,并回收形成在空间通路中的液浸区域的液体 恢复路径的恢复端口。 流动路径连接到供应口和液体源之间的供应路径,流动路径允许流过其中以去除剩余在供应路径中的液体,保留在供应路径中的液体已经从源供应 的液体,而不从供给口排出。
    • 7. 发明申请
    • 2D/3D Analysis for Abnormal Tools and Stages Diagnosis
    • 异常工具和阶段的2D / 3D分析诊断
    • US20140100684A1
    • 2014-04-10
    • US13647643
    • 2012-10-09
    • TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
    • Chun-Hsien LinJui-Long ChenHui-Yun ChaoJong-I MouChin-Hsiang Lin
    • G06F19/00
    • G06F17/50G03F7/70533G03F7/70616G05B23/024
    • A method for analyzing abnormalities in a semiconductor processing system provides performing an analysis of variance on a production history associated with each of a plurality of tools at each of a plurality of process steps for each of a plurality of processed wafers, and key process steps are identified. A regression analysis on a plurality of measurements of the plurality of wafers at each process step is performed and key measurement parameters are identified. An analysis of covariance on the key measurement parameters and key process steps, and the key process steps are ranked based on an f-ratio, therein ranking an abnormality of the key process steps. Further, the plurality of tools associated with each of the key process steps are ranked based on an orthogonal t-ratio associated with an analysis of covariance, therein ranking an abnormality each tool associated with the key process steps.
    • 一种用于分析半导体处理系统中的异常的方法,提供了在多个处理晶片中的每一个的多个处理步骤中的每一个处执行与多个工具中的每一个相关联的生产历史上的方差分析,并且关键处理步骤 确定。 执行在每个处理步骤对多个晶片的多个测量的回归分析,并且识别关键测量参数。 关键测量参数和关键过程步骤的协方差分析以及关键过程步骤基于f比进行排序,其中排列关键过程步骤的异常。 此外,与关键处理步骤中的每一个相关联的多个工具基于与协方差分析相关联的正交t比进行排序,其中对与关键处理步骤相关联的每个工具进行排序。