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    • 5. 发明授权
    • Data storage device and data checking and correction for volatile memory
    • 数据存储设备和易失性存储器的数据检查和校正
    • US09519541B2
    • 2016-12-13
    • US14271813
    • 2014-05-07
    • VIA TECHNOLOGIES, INC.
    • Lei Feng
    • G06F11/00G06F11/10
    • G06F11/108G06F11/1048G06F2211/109
    • Data checking and correction for a volatile memory of a data storage device, the data storage device further including a non-volatile memory and a controller. The controller operates the non-volatile memory in accordance with requests issued from a host. The controller uses the volatile memory for temporary storage of temporary data required for operations of the non-volatile memory. The controller generates error checking and correction content for the temporary data and writes the temporary data and the error checking and correction content into the volatile memory in at least one burst length for temporary storage of the temporary data. In this manner, it is not necessary to manufacture any additional pin on the volatile memory for data checking and correction.
    • 用于数据存储设备的易失性存储器的数据检查和校正,所述数据存储设备还包括非易失性存储器和控制器。 控制器根据从主机发出的请求来操作非易失性存储器。 控制器使用易失性存储器临时存储非易失性存储器操作所需的临时数据。 控制器产生用于临时数据的错误检查和校正内容,并将临时数据和错误检查和校正内容以至少一个突发长度写入易失性存储器,以临时存储临时数据。 以这种方式,不需要在易失性存储器上制造任何额外的引脚用于数据检查和校正。
    • 6. 发明授权
    • System and method for data error recovery in a solid state subsystem
    • 固态子系统中数据错误恢复的系统和方法
    • US09405617B1
    • 2016-08-02
    • US14216295
    • 2014-03-17
    • Western Digital Technologies, Inc.
    • Mei-Man L. Syu
    • G06F11/00G06F11/10G06F11/07
    • G06F11/1008G06F11/0727G06F11/1016G06F11/108G06F2211/109
    • Systems and methods are disclosed for recovering from a data access error encountered in data stripes implemented in a data redundancy scheme (e.g., RAID) in a solid state storage device. In one embodiment, the storage device holds parity data in a temporary, volatile memory such as a RAM and writes the parity data to the non-volatile memory when a full stripe's worth of new write data has been written to the non-volatile memory. In one embodiment, upon detecting that a data access error has occurred in a partially written stripe, the storage device initiates a write of the parity data for the partially written stripe to the non-volatile memory and executes a RAID recovery procedure using the newly written parity data to attempt to recover from the detected error. This approach allows for a recovery from the data access error without waiting for the full stripe to be written.
    • 公开了用于从在固态存储设备中的数据冗余方案(例如,RAID)中实现的数据条带中遇到的数据访问错误中恢复的系统和方法。 在一个实施例中,存储设备将奇偶校验数据保存在诸如RAM的临时易失性存储器中,并且当全条带的新写入数据已被写入非易失性存储器时,将奇偶校验数据写入非易失性存储器。 在一个实施例中,当检测到在部分写入的条带中发生数据访问错误时,存储装置启动对部分写入条带的奇偶校验数据的写入到非易失性存储器,并使用新写入执行RAID恢复过程 奇偶校验数据尝试从检测到的错误中恢复。 这种方法允许从数据访问错误中恢复,而不等待写入完整的条带。
    • 7. 发明授权
    • Parity scheme for a data storage device
    • 数据存储设备的奇偶校验方案
    • US09323613B2
    • 2016-04-26
    • US14694825
    • 2015-04-23
    • SANDISK TECHNOLOGIES INC.
    • Xinde HuManuel Antonio D'Abreu
    • H03M13/00G06F11/10G11C11/56G11C16/04G11C29/52
    • G06F11/1068G06F11/1012G06F11/1072G06F11/108G06F2211/109G11C11/5671G11C16/0483G11C29/52G11C29/785
    • A data storage device includes a non-volatile memory. The non-volatile memory may include a first word line, a second word line, and a third word line. The second word line may be between the first word line and the third word line. The non-volatile memory may further include a first string and a second string. The first string may be adjacent to the second string. The data storage device may further include circuitry configured to store parity information at a fourth word line of the non-volatile memory. The parity information may correspond to a combination of first data associated with the first word line and the first string, second data associated with the first word line and the second string, third data associated with the third word line and the first string, and fourth data associated with the third word line and the second string.
    • 数据存储装置包括非易失性存储器。 非易失性存储器可以包括第一字线,第二字线和第三字线。 第二字线可以在第一字线和第三字线之间。 非易失性存储器还可以包括第一串和第二串。 第一个字符串可以与第二个字符串相邻。 数据存储设备还可以包括被配置为在非易失性存储器的第四字线处存储奇偶校验信息的电路。 奇偶校验信息可以对应于与第一字线和第一字符串相关联的第一数据,与第一字线和第二字符串相关联的第二数据,与第三字线和第一字符串相关联的第三数据以及第四字符串的组合 与第三字线和第二字符串相关联的数据。