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1. 发明申请

US20190058110A1 Magnetic Diode in Artificial Magnetic Honeycomb Lattice 审中-公开
公开(公告)号：US20190058110A1
公开(公告)日：2019-02-21
申请号：US15978042
申请日：2018-05-11
申请人： The Curators of the University of Missouri
发明人： Deepak Kumar Singh , Brock Summers , Ashutosh Dahal
IPC分类号： H01L43/02 , H01F41/20 , H01F10/14 , H01F10/26 , H01L43/12 , H01L43/10 , H01F41/34
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/5607 , G11C19/02 , H01F1/009 , H01F10/142 , H01F10/26 , H01F41/20 , H01F41/34 , H01L27/224 , H01L43/10 , H01L43/12
摘要： A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm2 to about 900 mm2.

2. 发明授权

US08685549B2 Nanocomposites for ultra high density information storage, devices including the same, and methods of making the same 有权
标题翻译：用于超高密度信息存储的纳米复合材料，包括其的器件及其制造方法
公开(公告)号：US08685549B2
公开(公告)日：2014-04-01
申请号：US12956598
申请日：2010-11-30
申请人： Amit Goyal , Junsoo Shin
发明人： Amit Goyal , Junsoo Shin
IPC分类号： C30B23/02 , B32B9/00 , G11B5/127 , G11B5/706
CPC分类号： C30B23/02 , H01F1/0063 , H01F1/0081 , H01F41/18 , H01F41/20 , Y10T428/25 , Y10T428/292 , Y10T428/2958
摘要： A nanocomposite article that includes a single-crystal or single-crystal-like substrate and heteroepitaxial, phase-separated layer supported by a surface of the substrate and a method of making the same are described. The heteroepitaxial layer can include a continuous, non-magnetic, crystalline, matrix phase, and an ordered, magnetic magnetic phase disposed within the matrix phase. The ordered magnetic phase can include a plurality of self-assembled crystalline nanostructures of a magnetic material. The phase-separated layer and the single crystal substrate can be separated by a buffer layer. An electronic storage device that includes a read-write head and a nanocomposite article with a data storage density of 0.75 Tb/in2 is also described.
摘要翻译：描述了包括单晶或单晶样衬底和由衬底表面支撑的异质外延，相分离层的纳米复合材料及其制备方法。异质外延层可以包括连续的，非磁性的，结晶的基质相，以及设置在基体相内的有序的磁性磁相。有序磁性相可以包括磁性材料的多个自组装结晶纳米结构。相分离层和单晶基板可以通过缓冲层分离。还描述了一种包括读写头和数据存储密度为0.75Tb / in2的纳米复合制品的电子存储装置。

3. 发明申请

US20110260816A1 R-Fe-B RARE-EARTH SINTERED MAGNET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： R-Fe-B稀土烧结磁体及其制造方法
公开(公告)号：US20110260816A1
公开(公告)日：2011-10-27
申请号：US13176097
申请日：2011-07-05
申请人： Hideyuki MORIMOTO , Tomoori ODAKA , Masao NOUMI
发明人： Hideyuki MORIMOTO , Tomoori ODAKA , Masao NOUMI
IPC分类号： H01F7/02
CPC分类号： H01F1/0577 , B22F2998/10 , B22F2999/00 , C22C1/0475 , H01F41/0293 , H01F41/18 , H01F41/20 , B22F3/10 , B22F2207/01
摘要： First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.
摘要翻译：首先，将作为主相的R-Fe-B系稀土类烧结磁体作为主要相，包含作为Nd和Pr中的至少一种的稀土元素RL的R2Fe14B型化合物的晶粒，作为提供了主要的稀土元素R. 接着，在烧结磁体的表面上沉积包含选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素的金属元素M的M层，则在M层上沉积包含作为选自Dy，Ho和Tb中的至少一种元素的重稀土类元素RH的RH层。此后，烧结磁体被加热，从而使金属元件M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。

4. 发明授权

US08038807B2 R-Fe-B rare-earth sintered magnet and process for producing the same 有权
标题翻译： R-Fe-B系稀土类烧结磁体及其制造方法
公开(公告)号：US08038807B2
公开(公告)日：2011-10-18
申请号：US12160510
申请日：2007-01-12
申请人： Hideyuki Morimoto , Tomoori Odaka , Masao Noumi
发明人： Hideyuki Morimoto , Tomoori Odaka , Masao Noumi
IPC分类号： H01F1/057
CPC分类号： H01F1/0577 , B22F2998/10 , B22F2999/00 , C22C1/0475 , H01F41/0293 , H01F41/18 , H01F41/20 , B22F3/10 , B22F2207/01
摘要： First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.
摘要翻译：首先，将作为主相的R-Fe-B系稀土类烧结磁体作为主要相，包含作为Nd和Pr中的至少一种的稀土元素RL的R2Fe14B型化合物的晶粒，作为提供了主要的稀土元素R. 接着，在烧结磁体的表面上沉积包含选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素的金属元素M的M层，则在M层上沉积包含作为选自Dy，Ho和Tb中的至少一种元素的重稀土类元素RH的RH层。此后，烧结磁体被加热，从而使金属元件M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。

5. 发明授权

US07897200B2 Ultrathin ferromagnetic/antiferromagnetic coupling film structure and fabrication method thereof 有权
标题翻译：超薄铁磁/反铁磁耦合膜结构及其制造方法
公开(公告)号：US07897200B2
公开(公告)日：2011-03-01
申请号：US12183164
申请日：2008-07-31
申请人： Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
发明人： Jyh-Shen Tsay , Chi-Wei Lee , Gung Chern
IPC分类号： G11B21/00 , G11B5/33 , B05D1/18 , B32B7/02 , C25D3/12 , C25D3/00 , G11C19/08 , B22F3/00 , C23C8/10
CPC分类号： C23C14/5853 , B82Y25/00 , C23C14/16 , G11B5/3906 , G11B5/66 , H01F10/3218 , H01F41/20 , Y10S428/90 , Y10T428/1107 , Y10T428/24942
摘要： The present invention provides a ferromagnetic/antiferromagnetic coupling film structure and a fabrication method thereof. The structure includes an antiferromagnetic layer of cobalt oxide having a thickness of 2 to 15 monolayers and formed on a substrate at a temperature ranging from 700K to 900K; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer for being formed on the antiferromagnetic layer of cobalt oxide.
摘要翻译：本发明提供一种铁磁/反铁磁耦合膜结构及其制造方法。该结构包括厚度为2至15单层的钴氧化物的反铁磁层，并在700K至900K的温度范围内形成在衬底上; 以及具有至少一个单层厚度的钴的铁磁层，用于形成在氧化钴的反铁磁层上。

6. 发明申请

US20100231338A1 R-Fe-B RARE-EARTH SINTERED MAGNET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译： R-Fe-B稀土烧结磁体及其制造方法
公开(公告)号：US20100231338A1
公开(公告)日：2010-09-16
申请号：US12160510
申请日：2007-01-12
申请人： Hideyuki Morimoto , Tomoori Odaka , Masao Noumi
发明人： Hideyuki Morimoto , Tomoori Odaka , Masao Noumi
IPC分类号： H01F7/02 , B05D5/00 , C23C14/34 , C23C14/18 , C25D3/56 , C25D3/00
CPC分类号： H01F1/0577 , B22F2998/10 , B22F2999/00 , C22C1/0475 , H01F41/0293 , H01F41/18 , H01F41/20 , B22F3/10 , B22F2207/01
摘要： First, an R—Fe—B based rare-earth sintered magnet body including, as a main phase, crystal grains of an R2Fe14B type compound that includes a light rare-earth element RL, which is at least one of Nd and Pr, as a major rare-earth element R is provided. Next, an M layer, including a metallic element M that is at least one element selected from the group consisting of Al, Ga, In, Sn, Pb, Bi, Zn and Ag, is deposited on the surface of the sintered magnet body and then an RH layer, including a heavy rare-earth element RH that is at least one element selected from the group consisting of Dy, Ho and Tb, is deposited on the M layer. Thereafter, the sintered magnet body is heated, thereby diffusing the metallic element M and the heavy rare-earth element RH from the surface of the magnet body deeper inside the magnet.
摘要翻译：首先，将作为主相的R-Fe-B系稀土类烧结磁体作为主要相，包含作为Nd和Pr中的至少一种的稀土元素RL的R2Fe14B型化合物的晶粒，作为提供了主要的稀土元素R. 接着，在烧结磁体的表面上沉积包含选自Al，Ga，In，Sn，Pb，Bi，Zn和Ag中的至少一种元素的金属元素M的M层，则在M层上沉积包含作为选自Dy，Ho和Tb中的至少一种元素的重稀土类元素RH的RH层。此后，烧结磁体被加热，从而使金属元件M和重稀土元素RH从磁体的表面更深地扩散到磁体内部。

7. 发明申请

US20090316370A1 ELECTROMAGNETIC NOISE SUPPRESSOR, STRUCTURE WITH ELECTROMAGNETIC NOISE SUPPRESSING FUNCTION AND THEIR MANUFACTURING METHODS 有权
标题翻译：电磁噪声抑制器，具有电磁噪声抑制功能的结构及其制造方法
公开(公告)号：US20090316370A1
公开(公告)日：2009-12-24
申请号：US12551184
申请日：2009-08-31
申请人： Toshiyuki Kawaguchi , Atsushi Taniguchi , Takashi Gonda
发明人： Toshiyuki Kawaguchi , Atsushi Taniguchi , Takashi Gonda
IPC分类号： H05K1/18 , B32B5/00
CPC分类号： H01F1/00 , H01F1/28 , H01F17/04 , H01F27/365 , H01F41/20 , H01F2017/065 , H01L23/552 , H01L27/14618 , H01L2924/0002 , H01L2924/3011 , H05K1/0233 , H05K3/284 , H05K3/285 , H05K9/0083 , H05K9/009 , H05K2201/083 , H05K2201/086 , Y10T428/269 , Y10T428/32 , Y10T428/325 , H01L2924/00
摘要： An electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability at 8 GHz is higher than the imaginary part of complex magnetic permeability at 5 GHz. Such an electromagnetic noise suppressor is capable of achieving sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. The electromagnetic noise suppressor can be manufactured by forming a composite layer on the surface of a binding agent through physical deposition of a magnetic material on the binding agent. The structure with an electromagnetic noise suppressing function of the present invention is a printed wiring board, a semiconductor integrated circuit or the like that is covered with the electromagnetic noise suppressor on at least a part of the surface of the structure.
摘要翻译：本发明的电磁噪声抑制器的磁共振频率为8GHz以上，8GHz的复磁导率的虚部高于5GHz的复磁导率的虚部。这样的电磁噪声抑制器能够在整个子微波带上实现足够的电磁噪声抑制效果。可以通过在粘合剂上物理沉积磁性材料，在粘合剂的表面上形成复合层来制造电磁噪声抑制器。本发明的具有电磁噪声抑制功能的结构是在该结构体的至少一部分表面被电磁噪声抑制器覆盖的印刷电路板，半导体集成电路等。

8. 发明申请

US20080257716A1 Coating Method and Apparatus, a Permanent Magnet, and Manufacturing Method Thereof 审中-公开
标题翻译：涂布方法和装置，永久磁铁及其制造方法
公开(公告)号：US20080257716A1
公开(公告)日：2008-10-23
申请号：US11886629
申请日：2006-03-14
申请人： Hiroshi Nagata , Yoshinori Shingaki
发明人： Hiroshi Nagata , Yoshinori Shingaki
IPC分类号： C23C14/54 , C23C14/22 , H01F1/053 , H01F10/12 , H01F41/20
CPC分类号： C23C14/16 , C23C14/243 , C23C14/541 , H01F1/0571 , H01F10/126 , H01F41/0293 , H01F41/20
摘要： A film is formed at a high rate on the surface of an iron-boron-rare-earth-metal magnet having a given shape, while effectively using dysprosium or terbium as a film-forming material. Thus, productivity is improved and a permanent magnet can be produced at low cost. A permanent magnet is produced through a film formation step in which a film of dysprosium is formed on the surface of an iron-boron-rare-earth-metal magnet of a given shape and a diffusion step in which the magnet coated is subjected to a heat treatment at a given temperature to cause the dysprosium deposited on the surface to diffuse into the grain boundary phase of the magnet. The film formation step comprises: a first step in which a treating chamber where this film formation is performed is heated to vaporize dysprosium which has been disposed in this treating chamber and thereby form a dysprosium vapor atmosphere having a given vapor pressure in the treating chamber; and a second step in which a magnet kept at a temperature lower than the internal temperature of the treating chamber is introduced into this treating chamber and the dysprosium is selectively deposited on the magnet surface based on a temperature difference between the treating chamber and the magnet until the magnet temperature reaches a given value.
摘要翻译：在具有给定形状的铁 - 硼 - 稀土金属磁体的表面上以高比率形成膜，同时有效地使用镝或铽作为成膜材料。因此，提高生产率，并且可以以低成本生产永磁体。通过成膜步骤制造永磁体，其中在给定形状的铁 - 硼 - 稀土 - 金属磁体的表面上形成镝的膜，并且扩散步骤，其中涂覆的磁体经受在给定温度下进行热处理，使沉积在表面上的镝扩散到磁体的晶界相。成膜步骤包括：第一步骤，其中进行该成膜的处理室被加热以蒸发已经设置在该处理室中的镝，从而在处理室中形成具有给定蒸气压的镝蒸汽气氛; 并且将保持在比处理室的内部温度低的温度的磁体引入该处理室中的第二步骤，并且基于处理室和磁体之间的温度差选择性地将镝沉积在磁体表面上，直到磁体温度达到给定值。

9. 发明授权

US07384567B2 Method of manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US07384567B2
公开(公告)日：2008-06-10
申请号：US11015422
申请日：2004-12-20
申请人： Woo Seok Cheong , Yong Goo Yoo , Doo Hee Cho , Jae Kwang Lee , Ki Chul Kim , Jeong Dae Suh
发明人： Woo Seok Cheong , Yong Goo Yoo , Doo Hee Cho , Jae Kwang Lee , Ki Chul Kim , Jeong Dae Suh
IPC分类号： H01L21/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3929 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F41/18 , H01F41/20 , H01F41/308
摘要： Provided is a method of manufacturing a thin film magnetic head. In particular, a method of manufacturing a thin film magnetic head is provided in which a flow process of a photoresist is applied to separate a hard magnetic layer and a metal multi-layer and a photoresist is used to insulate an upper electrode from a lower electrode in manufacturing a magnetic reproduction device, thereby simplifying and optimizing a manufacturing process and significantly reducing a manufacturing time.
摘要翻译：提供一种制造薄膜磁头的方法。特别地，提供一种制造薄膜磁头的方法，其中施加光致抗蚀剂的流动过程以分离硬磁性层和金属多层，并且使用光致抗蚀剂来使上电极与下电极绝缘在制造磁再现装置中，从而简化和优化制造工艺并显着减少制造时间。

10. 发明申请

US20040256222A1 Apparatus and method for highly controlled electrodeposition 审中-公开
标题翻译：高度控制电沉积的装置和方法
公开(公告)号：US20040256222A1
公开(公告)日：2004-12-23
申请号：US10778647
申请日：2004-02-12
申请人： Surfect Technologies, Inc.
发明人： Thomas P. Griego , Fernando M. Sanchez
IPC分类号： C25D005/02 , C25D005/00 , C25D017/16
CPC分类号： B23K35/0244 , B22F2998/00 , B22F2999/00 , C25D15/00 , C25D15/02 , C25D17/001 , H01F41/16 , H01F41/20 , H01F41/26 , H01L2224/11334 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/014 , B22F1/025 , B22F1/0088
摘要： An apparatus and method for highly controlled electrodeposition, particularly useful for electroplating submicron structures. Enhanced control of the process provides for a more uniform deposit thickness over the entire substrate, and permits reliable plating of submicron features. The apparatus includes a pressurized electrochemical cell to improve plating efficiency and reduce defects, vertical laminar flow of the electrolyte solution to remove surface gases from the vertically arranged substrate, a rotating wafer chuck to eliminate edge plating effects, and a variable aperture to control the current distribution and ensure deposit uniformity across the entire substrate. Also a dynamic profile anode whose shape can be varied to optimize the current distribution to the substrate. The anode is advantageously able to use metallic ion sources and may be placed close to the cathode thus minimizing contamination of the substrate.
摘要翻译：用于高度控制电沉积的装置和方法，特别适用于电镀亚微米结构。该过程的增强控制提供了在整个基板上更均匀的沉积厚度，并且允许亚微米特征的可靠电镀。该装置包括一个加压电化学电池，以提高电镀效率并减少缺陷，电解质溶液的垂直层流从垂直排列的衬底去除表面气体，旋转晶片卡盘以消除边缘电镀效应，以及可变孔径来控制电流分布并确保整个基板的沉积均匀性。还可以改变其形状可以改变以优化对衬底的电流分布的动态轮廓阳极。阳极有利地能够使用金属离子源并且可以靠近阴极放置，从而最小化衬底的污染。

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