专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150078074A1 THREE-DIMENSIONAL MAGNETIC MEMORY WITH MULTI-LAYER DATA STORAGE LAYERS 有权
公开(公告)号：US20150078074A1
公开(公告)日：2015-03-19
申请号：US14555235
申请日：2014-11-26
申请人： HGST Netherlands B.V.
发明人： Olav Hellwig , Bruce D. Terris , Jan-Ulrich Thiele
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , G11C2213/71 , H01L27/222 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

2. 发明授权

US08726491B2 Method of forming a spin-transfer torque random access memory (STT-RAM) device 有权
标题翻译：形成自旋转移转矩随机存取存储器（STT-RAM）装置的方法
公开(公告)号：US08726491B2
公开(公告)日：2014-05-20
申请号：US13373128
申请日：2011-11-04
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G01R33/098 , G01R33/1284 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1136 , Y10T428/1143
摘要： A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.
摘要翻译：公开了在STT-RAM器件中实现高dR / R的同时使自旋迁移磁化开关电流（Jc）最小化的双自旋滤波器。底部自旋阀具有通过自然氧化工艺形成的MgO隧道阻挡层，以实现低RA，CoFe / Ru / CoFeB-CoFe钉扎层和具有中等纳米通道（NCC）的CoFeB / FeSiO / CoFeB复合材料自由层，层以最小化Jc0。 NCC层可以是其中导电M（Si）晶粒与相邻铁磁层磁耦合并且形成在氧化物，氮化物或氧氮化物绝缘体基体中的复合材料。上自旋阀具有Cu间隔物以降低自由层阻尼常数。使用360℃的高退火温度将MR比提高到100％以上。基于具有类似的MgO隧道势垒和复合自由层的MTJ的准静态测量，预期小于1×106A / cm 2的Jc0。

3. 发明授权

US08490279B2 Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors 有权
标题翻译：在薄膜磁阻传感器中制造增强型硬偏置层的方法
公开(公告)号：US08490279B2
公开(公告)日：2013-07-23
申请号：US12924363
申请日：2010-09-24
申请人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
发明人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T428/1107 , Y10T428/115
摘要： A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.
摘要翻译：公开了形成用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构的方法。形成具有垂直于底层种子层的易于轴生长的HB层，其形成在衬底上并沿着传感器的两个侧壁。在一个实施例中，可以是顶部屏蔽的共形软磁性层沉积在HB层上以提供补偿HB表面电荷的直接交换耦合。可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。

4. 发明授权

US08361541B2 Fabrication of magnetoresistive sensors and electronic lapping guides 有权
标题翻译：磁阻传感器和电子研磨导轨的制造
公开(公告)号：US08361541B2
公开(公告)日：2013-01-29
申请号：US12462104
申请日：2009-07-28
申请人： Edward Hin Pong Lee , David John Seagle
发明人： Edward Hin Pong Lee , David John Seagle
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T428/1107 , Y10T428/1121
摘要： The subject matter disclosed herein provides methods for manufacturing an electronic lapping guide and a magnetic read head assembly. The magnetoresistive head assembly includes a sensing element that has a front edge and a front flux guide that has a back edge, such that the sensing element front edge and the front flux guide back edge share a common interface that defines an interface plane normal to the surface of a wafer substrate. The electronic lapping guide comprises a conductive material adapted to attach to two electrical leads for measuring a resistance through the conductive material. The conductive material may include a conductive material back edge aligned with the interface plane. The resistance of the conductive material may be inversely proportional to a conductive material length normal to the interface plane.
摘要翻译：本文公开的主题提供了用于制造电子研磨导向器和磁读头组件的方法。磁阻头组件包括具有前边缘的感测元件和具有后边缘的前通量引导件，使得感测元件前边缘和前导流引导后边缘共享公共接口，该公共接口限定与晶片基板的表面。电子研磨引导件包括适于附接到两个电引线的导电材料，用于测量通过导电材料的电阻。导电材料可以包括与界面平面对准的导电材料后边缘。导电材料的电阻可能与与界面平面垂直的导电材料长度成反比。

5. 发明授权

US08242776B2 Magnetic sensor design for suppression of barkhausen noise 有权
标题翻译：用于抑制巴克豪森噪声的磁传感器设计
公开(公告)号：US08242776B2
公开(公告)日：2012-08-14
申请号：US12055482
申请日：2008-03-26
申请人： Phillip G. Mather , Young Sir Chung , Bradley N. Engel
发明人： Phillip G. Mather , Young Sir Chung , Bradley N. Engel
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , Y10T428/1107
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (202-205), each of which includes a magnetic field pulse generator (e.g., 414) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g., 411) to eliminate micromagnetic domain switches during measurements of small magnetic fields.
摘要翻译：半导体工艺和装置从仅需要两个不同的钉扎轴（206,216）的两个差分传感器配置（201,211）提供高性能磁场传感器，其中每个差分传感器（例如，201）由惠斯通具有四个非屏蔽MTJ传感器（202-205）的桥结构，其中每个包括用于选择性地施加场脉冲以稳定或恢复感测层（例如，411）的易轴磁化的磁场脉冲发生器（例如414）以在小磁场测量期间消除微磁畴开关。

6. 发明申请

US20120058575A1 Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same 有权
标题翻译：用于STT-RAM的低开关电流双自旋滤波器（DSF）元件及其制造方法
公开(公告)号：US20120058575A1
公开(公告)日：2012-03-08
申请号：US13373128
申请日：2011-11-04
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L43/12
CPC分类号： G01R33/098 , G01R33/1284 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1136 , Y10T428/1143
摘要： A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.
摘要翻译：公开了在STT-RAM器件中实现高dR / R的同时使自旋迁移磁化开关电流（Jc）最小化的双自旋滤波器。底部自旋阀具有通过自然氧化工艺形成的MgO隧道阻挡层，以实现低RA，CoFe / Ru / CoFeB-CoFe钉扎层和具有中等纳米通道（NCC）的CoFeB / FeSiO / CoFeB复合材料自由层，层以最小化Jc0。 NCC层可以是其中导电M（Si）晶粒与相邻铁磁层磁耦合并且形成在氧化物，氮化物或氧氮化物绝缘体基体中的复合材料。上自旋阀具有Cu间隔物以降低自由层阻尼常数。使用360℃的高退火温度将MR比提高到100％以上。基于具有类似的MgO隧道势垒和复合自由层的MTJ的准静态测量，预期小于1×106A / cm 2的Jc0。

7. 发明申请

US20120040207A1 Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same 有权
公开(公告)号：US20120040207A1
公开(公告)日：2012-02-16
申请号：US13317484
申请日：2011-10-19
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： G01R33/098 , G01R33/1284 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1136 , Y10T428/1143
摘要： A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

8. 发明授权

US08049567B2 Circuit for phase locked oscillators 有权
标题翻译：锁相振荡器电路
公开(公告)号：US08049567B2
公开(公告)日：2011-11-01
申请号：US12262772
申请日：2008-10-31
申请人： Johan Persson , Yan Zhou , Johan Åkerman
发明人： Johan Persson , Yan Zhou , Johan Åkerman
IPC分类号： H03L7/00
CPC分类号： H03B15/006 , Y10T428/1107
摘要： A circuit comprising a DC current source and at least two spin torque oscillators, the at least two spin torque oscillators being electrically coupled to each other and to the DC current source. A circuit comprising phase shifting means is connected in such a way as to cause a phase shift between current and voltage through the spin torque oscillators. An advantage is that the controlled phase shift significantly increases the tolerance for deviating anisotropy fields, which makes manufacturing of spin torque oscillator devices much more feasible in practice.
摘要翻译：一种包括DC电流源和至少两个自旋扭矩振荡器的电路，所述至少两个自旋扭矩振荡器彼此电耦合并且连接到DC电流源。包括相移装置的电路以通过自旋扭矩振荡器引起电流和电压之间的相移的方式连接。一个优点是受控相移显着增加了偏差各向异性场的公差，这使得自旋扭矩振荡器装置的制造在实践中更加可行。

9. 发明授权

US07957083B2 Method for early detection of magnetic head degradation due to carbon overcoat wear 有权
标题翻译：早期检测由于碳外套磨损引起的磁头退化的方法
公开(公告)号：US07957083B2
公开(公告)日：2011-06-07
申请号：US11781898
申请日：2007-07-23
申请人： Albert John Wallash , Hong Zhu
发明人： Albert John Wallash , Hong Zhu
IPC分类号： G11B27/36
CPC分类号： G11B27/36 , G11B5/3106 , G11B5/40 , G11B5/455 , G11B19/048 , G11B2220/2516 , Y10T428/1107
摘要： A method for detecting an impending failure of a disk drive system. The method includes monitoring a signal from a magnetoresistive sensor for the presence of a negative signal spike. A negative signal spike can indicate that the carbon overcoat of the magnetic medium has been locally worn off. The resulting localized absence of carbon overcoat causes the magnetoresistive sensor to short to the magnetic medium. This causes a short, abrupt drop in voltage, which can be used as evidence of the localized absence of the carbon overcoat. If such a negative signal spike is detected, the user can be notified of an impending system failure. In addition to, or in lieu of, notifying the user of the impending system failure, the system can be automatically de-activated to prevent data loss and/or further damage to the recording system.
摘要翻译：一种用于检测磁盘驱动器系统即将发生故障的方法。该方法包括监视来自磁阻传感器的信号以存在负信号尖峰。负信号尖峰可以指示磁性介质的碳外涂层已被局部磨损。所得到的局部不存在碳覆盖层导致磁阻传感器短于磁介质。这导致电压短暂的突然下降，其可以用作局部不存在碳外涂层的证据。如果检测到这样的负信号尖峰，则可以向用户通知即将发生的系统故障。或者代替通知用户即将发生的系统故障，系统可以被自动去激活，以防止数据丢失和/或进一步损坏记录系统。

10. 发明授权

US07897274B2 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus 有权
标题翻译：磁阻器件，磁阻磁头和磁记录再现装置
公开(公告)号：US07897274B2
公开(公告)日：2011-03-01
申请号：US11685490
申请日：2007-03-13
申请人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
发明人： Hiromi Yuasa , Masatoshi Yoshikawa , Yuzo Kamiguchi , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
摘要翻译：磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括磁化钉扎层，非磁性中间层和无磁化层。磁化固定层和磁化自由层中的至少一个基本上由式FeaCobNic（其中a + b + c = 100原子％，a＆nlE; 75原子％，b＆nlE; 75在％，c＆nlE; 63at％），或由具有体心立方晶体结构的合金形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式