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1. 发明公开

US20240234038A9 Single Layer Capacitor 审中-公开
公开(公告)号：US20240234038A9
公开(公告)日：2024-07-11
申请号：US18489039
申请日：2023-10-18
申请人： KYOCERA AVX Components Corporation
发明人： Ronald S. Demcko , Cory Nelson , Marianne Berolini , Jeff Borgman
IPC分类号： H01G4/33 , H01G4/12 , H01G4/252 , H05K1/16
CPC分类号： H01G4/33 , H01G4/1254 , H01G4/252 , H05K1/162 , H05K2201/09554
摘要： A single layer capacitor can include a substrate having a first surface and a second surface opposite the first surface. A resistive layer can be formed over at least a portion of the first surface of the substrate. A first conductive layer can be formed over at least a portion of the resistive layer. A second conductive layer can be formed over at least a portion of the second surface of the substrate. As such, the single layer capacitor can include a resistor and a capacitor formed in series with one another.

2. 发明授权

US11929393B2 Integrated circuit devices and methods of manufacturing the same 有权
公开(公告)号：US11929393B2
公开(公告)日：2024-03-12
申请号：US18093948
申请日：2023-01-06
申请人： Samsung Electronics Co., Ltd.
发明人： Jungoo Kang , Hyunsuk Lee , Gihee Cho , Sanghyuck Ahn
IPC分类号： H01G4/12 , H01L23/522 , H01L49/02
CPC分类号： H01L28/91 , H01G4/1254 , H01L23/5222 , H01L28/56 , H01L2221/1084 , H01L2221/1089
摘要： An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.

3. 发明授权

US10872710B2 Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof 有权
公开(公告)号：US10872710B2
公开(公告)日：2020-12-22
申请号：US16426044
申请日：2019-05-30
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Doh Won Jung , Chan Kwak , Hyungjun Kim , Jong Wook Roh , Daejin Yang , Youngjin Cho
IPC分类号： H01B3/12 , H01B3/00 , H01G4/12 , H01G4/30
CPC分类号： H01B3/002 , H01B3/12 , H01G4/1236 , H01G4/1254 , H01G4/1263 , H01G4/30
摘要： A dielectric composite includes: at least one first dielectric material represented by Chemical Formula 1, and at least one second dielectric material represented by Chemical Formula 2, wherein the first dielectric material has at least one first crystal structure and the second dielectric material has a second crystal structure that is different from the first crystal structure, and the first dielectric material and the second dielectric material are agglomerated with each other,

A111-xA12xB12O6 Chemical Formula 1

A212(1-y)A222yB22O7. Chemical Formula 2

4. 发明申请

US20190122826A1 TUNABLE COPLANAR CAPACITOR WITH VERTICAL TUNING AND LATERAL RF PATH AND METHODS FOR MANUFACTURING THEREOF 审中-公开
公开(公告)号：US20190122826A1
公开(公告)日：2019-04-25
申请号：US15791176
申请日：2017-10-23
申请人： BlackBerry Limited
发明人： Marina Zelner , Andrew Vladimir Claude Cervin
IPC分类号： H01G7/06
CPC分类号： H01G7/06 , H01G4/1227 , H01G4/1236 , H01G4/1254 , H01G4/33 , H01G9/0029 , H01L21/306 , H01L23/5223 , H01L28/40 , H01L28/56 , H01L28/75 , H01L28/92
摘要： A tunable capacitor that incorporates teachings of the subject disclosure may include: a substrate; a first dielectric layer over the substrate; a plurality of bias lines encapsulated between the substrate and the tunable dielectric layer; a first metal layer over the tunable dielectric layer (wherein the first metal layer has a plurality of first gaps); an upper bias layer over the first metal layer (herein each of a plurality of portions of the upper bias layer extend through a respective one of the plurality of first gaps to come into contact with the first dielectric layer, and wherein at least a second gap is disposed in the upper bias layer); and a second metal layer (wherein a portion of the second metal layer extends through the second gap to come into contact with the first metal layer). Other embodiments are disclosed.

5. 发明申请

US20180040424A1 DIELECTRIC COMPOSITION AND ELECTRONIC COMPONENT 审中-公开
公开(公告)号：US20180040424A1
公开(公告)日：2018-02-08
申请号：US15658791
申请日：2017-07-25
申请人： TDK CORPORATION
发明人： Tetsuhiro TAKAHASHI
IPC分类号： H01G4/12 , H01G4/30
CPC分类号： H01G4/1254 , C04B35/495 , C04B35/6261 , C04B35/62645 , C04B35/64 , C04B2235/3201 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3225 , C04B2235/3227 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3409 , C04B2235/3418 , C04B2235/3436 , C04B2235/3445 , C04B2235/447 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , H01G4/1272 , H01G4/30
摘要： A dielectric composition is provided. The dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K1-xNax)Sr2Nb5O15 as a main component, x satisfying 0≦x≦0.50, wherein the dielectric composition includes a secondary phase of at least one or more selected from: MgO.SiO2; BaO.2MgO.2SiO2; and 2MgO.B2O3; or the dielectric composition includes a tungsten bronze type complex oxide expressed by a chemical formula (K1-xNax)Sr2Nb5O15 as a main component, x satisfying 0≦x≦0.40, wherein the dielectric composition includes: MgO; BaO; B2O3; SiO2; and P2O5 as a first accessory component in a total content of 2.5 mol to 20.0 mol per 100 mol of the main component.

6. 发明授权

US09424993B2 Systems and methods for a thin film capacitor having a composite high-K thin film stack 有权
标题翻译：具有复合高K薄膜叠层的薄膜电容器的系统和方法
公开(公告)号：US09424993B2
公开(公告)日：2016-08-23
申请号：US14495489
申请日：2014-09-24
申请人： BlackBerry Limited
发明人： Marina Zelner , Mircea Capanu , Susan C. Nagy
IPC分类号： H01G4/00 , H01G4/06 , H01G4/33 , H01G4/12 , H01L49/02
CPC分类号： H01G4/33 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01L28/56 , Y10T29/417
摘要： Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
摘要翻译：提供了用于制造薄膜电容器的系统和方法，所述薄膜电容器包括在基底材料的顶部上沉积导电材料的电极层，使用金属有机沉积或化学溶液沉积工艺在基底材料的顶部上沉积第一层铁电材料层，使用高温溅射工艺在第一层的顶部上沉积第二层铁电材料层，并沉积金属互连层以提供与电容器层的电连接。

7. 发明申请

US20160079001A1 Graphene Electrode Based Ceramic Capacitor 审中-公开
标题翻译：石墨烯电极基陶瓷电容器
公开(公告)号：US20160079001A1
公开(公告)日：2016-03-17
申请号：US14121487
申请日：2014-09-12
申请人： Yi-jun Lin , Bor Z Jang , Shaio-Yen Lee , Aruna Zhamu
发明人： Yi-jun Lin , Bor Z Jang , Shaio-Yen Lee , Aruna Zhamu
IPC分类号： H01G4/008 , C01B31/04 , C04B35/465 , H01G4/12
CPC分类号： H01G4/008 , B32B18/00 , C01B32/182 , C04B35/4682 , C04B35/6261 , C04B35/62675 , C04B35/62685 , C04B35/62695 , C04B35/634 , C04B35/638 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3236 , C04B2235/3244 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3418 , C04B2235/442 , C04B2235/6025 , C04B2235/6582 , C04B2235/79 , C04B2237/346 , C04B2237/68 , C04B2237/704 , H01G4/1227 , H01G4/1245 , H01G4/1254
摘要： A ceramic capacitor comprising at least a dielectric ceramic layer and at least a graphene electrode layer deposited on the ceramic layer, wherein the graphene electrode layer has a thickness no less than 2 nm and consists of a graphene material or a graphene composite material containing at least 0.1% by weight of a graphene material dispersed in a matrix material or bonded by a binder material, wherein the graphene material is selected from (a) a plurality of single-layer or multi-layer pristine graphene sheets having less than 0.01% by weight of non-carbon elements, or (b) one or a plurality of a non-pristine graphene material having at least 0.01% by weight of non-carbon elements, wherein the non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, doped graphene, chemically functionalized graphene, or a combination thereof.
摘要翻译：一种陶瓷电容器，其至少包括介电陶瓷层和至少沉积在所述陶瓷层上的石墨烯电极层，其中所述石墨烯电极层具有不小于2nm的厚度，并且由至少包含石墨烯材料或石墨烯复合材料组成分散在基质材料中或通过粘合剂材料粘合的石墨烯材料0.1重量％，其中石墨烯材料选自（a）多个单层或多层原始石墨烯片，其具有小于0.01重量％的非碳元素，或（b）一种或多种非原始石墨烯材料，其具有至少0.01重量％的非碳元素，其中所述非原始石墨烯选自氧化石墨烯，氧化还原的氧化石墨烯，石墨烯氟化物，氯化石墨烯，溴化石墨烯，碘化石墨烯，氢化石墨烯，含氮石墨烯，掺杂石墨烯，化学官能化石墨烯或其组合。

8. 发明申请

US20150137272A1 DIELECTRIC NANOCOMPOSITES AND METHODS OF MAKING THE SAME 审中-公开
公开(公告)号：US20150137272A1
公开(公告)日：2015-05-21
申请号：US14538202
申请日：2014-11-11
申请人： EMPIRE TECHNOLOGY DEVELOPMENT LLC
发明人： Seth Miller
IPC分类号： H01L29/51 , H01L29/40 , H01G4/14 , H01L29/78
CPC分类号： H01L29/517 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/145 , H01G4/33 , H01L21/02118 , H01L28/40 , H01L29/408 , H01L29/511 , H01L29/78
摘要： Techniques related to nanocomposite dielectric materials are generally described herein. These techniques may be embodied in apparatuses, systems, methods and/or processes for making and using such material. An example process may include: providing a film having a plurality of nanoparticles and an organic medium; comminuting the film to form a particulate; and applying the particulate to a substrate. The example process may also include providing a nanoparticle film having nanoparticles and voids located between the nanoparticles; contacting the film with a vapor containing an organic material; and curing the organic material to form the nanocomposite dielectric film. Various described techniques may provide nanocomposite dielectric materials with superior nanoparticle dispersion which may result in improved dielectric properties.

9. 发明授权

US08528175B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08528175B2
公开(公告)日：2013-09-10
申请号：US13339692
申请日：2011-12-29
申请人： Vassil Antonov , Vishwanath Bhat , Chris M. Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris M. Carlson
IPC分类号： H01G7/00
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

10. 发明申请

US20120293909A1 HIGH DIELECTRIC FILM 审中-公开
标题翻译：高介电膜
公开(公告)号：US20120293909A1
公开(公告)日：2012-11-22
申请号：US13522442
申请日：2011-01-11
申请人： Mayuko Tatemichi , Nanako Takano , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
发明人： Mayuko Tatemichi , Nanako Takano , Miharu Ota , Kouji Yokotani , Nobuyuki Komatsu , Eri Mukai , Meiten Koh
IPC分类号： C08L27/16 , C08K3/22 , C08L1/00 , H01G4/30
CPC分类号： H01B3/445 , C08J5/18 , C08J2327/16 , H01G4/1209 , H01G4/1254 , H01G4/18 , H01G4/186 , H01G4/20 , H01G4/206
摘要： The present invention provides a high dielectric film comprising: a film-forming resin (A); and inorganic particles (B), wherein the film-forming resin (A) contains a vinylidene fluoride resin (a1), an amount of the inorganic particles (B) is not less than 0.01 parts by mass and less than 10 parts by mass for each 100 parts by mass of the film-forming resin (A), and the inorganic oxide particles (B) is at least one selected from the group consisting of: (B1) inorganic oxide particles of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table, or inorganic oxide composite particles of these; (B2) inorganic composite oxide particles represented by formula (1): M1a1Nb1Oc1 wherein M1 represents a metallic element of Group 2, N represents a metallic element of Group 4, a1 represents 0.9 to 1.1, b1 represents 0.9 to 1.1, c1 represents 2.8 to 3.2, and the numbers of M1 and N each may be more than 1; and (B3) inorganic oxide composite particles of an oxide of a metallic element of Group 2, 3, 4, 12, or 13 of the Periodic Table and silicon oxide. The film has improved volume resistivity while maintaining a high dielectric constant owing to a VdF resin.
摘要翻译：本发明提供一种高介电膜，包括：成膜树脂（A）; 和无机粒子（B），其中，成膜树脂（A）含有偏二氟乙烯树脂（a1），无机粒子（B）的量为0.01质量份以上且小于10质量份，对于每100质量份成膜树脂（A）和无机氧化物颗粒（B）是选自以下组中的至少一种：（B1）第2,3组金属元素的无机氧化物颗粒， 4,12或13，或这些的无机氧化物复合颗粒; （B2）式（1）表示的无机复合氧化物颗粒：M1a1Nb1Oc1其中M1表示第2族的金属元素，N表示第4族的金属元素，a1表示0.9〜1.1，b1表示0.9〜1.1，c1表示2.8〜 3.2，M1和N的数量可能大于1; 和（B3）元素周期表第2,3,4,12或13族金属元素的氧化物的无机氧化物复合颗粒和氧化硅。该膜具有改善的体积电阻率，同时由于VdF树脂而保持高的介电常数。

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