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1. 发明授权

US08329017B2 Method for electrochemically structuring a conductive or semiconductor material, and device for implementing it 失效
标题翻译：用于电化学构造导电或半导体材料的方法，以及用于实现它的装置
公开(公告)号：US08329017B2
公开(公告)日：2012-12-11
申请号：US12281595
申请日：2007-02-06
申请人： Denis Buttard
发明人： Denis Buttard
IPC分类号： C25D5/02 , C25D17/00
CPC分类号： B81C1/00126 , B81C2201/0114 , C25D1/00 , C25D1/006 , C25D5/02 , C25D5/16 , C25D7/12 , C25D17/005 , C25F3/14 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/306 , H01L21/3063 , H01L21/31675
摘要： The invention relates to a method and to a device for electrochemical micro- and/or nano-structuring, which are reliable, fast, simple, easy to implement, and reproducible. For this purpose, the invention provides a method of electrochemically structuring a sample (12) of conductive or semiconductor material that has opposite front and rear faces (11 and 13). The method comprises the steps consisting: in putting at least the front face (11) of the sample (12) into contact with at least one electrolytic solution (4) stored in at least one tank (3); in placing at least one counter-electrode (6) in an electrolyte (4) in register with the front face (11) of the sample (12), said front face (11) being for structuring; in placing at least one working electrode (7) presenting structuring patterns (14) into dry ohmic contact with the rear face (13) of the sample (12); and in applying an electric current between at least one counter-electrode (6) and at one least working electrode (7) that are substantially in register with each other in order to obtain an electrochemical reaction at the interface between the front face (11) of the sample (12) and the electrolyte (4) with current density that is modulated by the structuring patterns (14) of the working electrode (7) in order to perform etching and/or deposition on the front face (11) of the sample (12).
摘要翻译：本发明涉及电化学微观和/或纳米结构的方法和装置，它们是可靠的，快速的，简单的，易于实现的和可重复的。为此，本发明提供了一种电化学构造具有相对的前表面和后表面（11和13）的导电或半导体材料的样品（12）的方法。该方法包括以下步骤：至少将样品（12）的前表面（11）与至少一个储存在至少一个罐（3）中的电解液（4）接触; 在将至少一个对电极（6）放置在与样品（12）的前表面（11）对准的电解质（4）中，所述前表面（11）用于结构化; 在将至少一个工作电极（7）放置成与所述样品（12）的后表面（13）干法欧姆接触的结构图案（14）中; 并且在基本上彼此对准的至少一个对电极（6）和至少一个至少工作电极（7）之间施加电流，以便在所述前表面（11）之间的界面处获得电化学反应，的样品（12）和电解质（4），其电流密度由工作电极（7）的结构图案（14）调制，以便在所述工作电极（7）的正面（11）上进行蚀刻和/或沉积样品（12）。

2. 发明授权

US07696065B2 Method of manufacturing a semiconductor device by forming separation regions which do not extend to the peripherals of a substrate, and structures thereof 失效
标题翻译：通过形成不延伸到基板的外围的分离区域制造半导体器件的方法及其结构
公开(公告)号：US07696065B2
公开(公告)日：2010-04-13
申请号：US11222895
申请日：2005-09-08
申请人： Nobuhiko Sato , Shigeru Kido , Kazutaka Momoi
发明人： Nobuhiko Sato , Shigeru Kido , Kazutaka Momoi
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02203 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/02307 , H01L21/02337 , H01L21/31675 , H01L21/78 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method is disclosed. A semiconductor substrate having a separation region and a semiconductor region which covers the separation region entirely is prepared. One or a plurality of circuit elements are formed in the semiconductor region. The semiconductor substrate is split at the separation region.
摘要翻译：公开了半导体器件制造方法。制备具有分离区域和完全覆盖分离区域的半导体区域的半导体衬底。在半导体区域中形成有一个或多个电路元件。半导体衬底在分离区域处分裂。

3. 发明申请

US20080286948A1 Fabrication Method of Semiconductor Integrated Circuit Device 失效
标题翻译：半导体集成电路器件制造方法
公开(公告)号：US20080286948A1
公开(公告)日：2008-11-20
申请号：US12170020
申请日：2008-07-09
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

4. 发明申请

US20080230840A1 ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIFFUSION 有权
公开(公告)号：US20080230840A1
公开(公告)日：2008-09-25
申请号：US12132705
申请日：2008-06-04
申请人： Huajie Chen , Omer H. Dokumaci , Oleg G. Gluschenkov , Werner A. Rausch
发明人： Huajie Chen , Omer H. Dokumaci , Oleg G. Gluschenkov , Werner A. Rausch
IPC分类号： H01L49/00
CPC分类号： H01L21/26533 , H01L21/02238 , H01L21/26513 , H01L21/31654 , H01L21/31675 , H01L21/324 , H01L29/0847 , H01L29/66636
摘要： A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.

5. 发明授权

US07402870B2 Ultra shallow junction formation by epitaxial interface limited diffusion 有权
标题翻译：通过外延界面限制扩散的超浅结结形成
公开(公告)号：US07402870B2
公开(公告)日：2008-07-22
申请号：US10711899
申请日：2004-10-12
申请人： Huajie Chen , Omer H. Dokumaci , Oleg G. Gluschenkov , Werner A. Rausch
发明人： Huajie Chen , Omer H. Dokumaci , Oleg G. Gluschenkov , Werner A. Rausch
IPC分类号： H01L29/76
CPC分类号： H01L21/26533 , H01L21/02238 , H01L21/26513 , H01L21/31654 , H01L21/31675 , H01L21/324 , H01L29/0847 , H01L29/66636
摘要： A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.
摘要翻译：形成场效应晶体管的方法产生更浅和更尖的结，同时在与当前制造技术一致的工艺中最大化掺杂剂活化。更具体地，本发明增加了硅衬底的顶表面的氧含量。优选在增加硅衬底的顶表面的氧含量之前清洁硅衬底的顶表面。硅衬底的顶表面的氧含量高于硅衬底的其它部分，但低于防止外延生长的量。这允许本发明在硅衬底的顶表面上外延生长硅层。此外，增加的氧含量基本上限制外延硅层内的掺杂剂移动到硅衬底中。

6. 发明申请

US20070218668A1 Controlled growth of highly uniform, oxide layers, especially ultrathin layers 审中-公开
标题翻译：高度均匀的氧化物层，特别是超薄层的受控生长
公开(公告)号：US20070218668A1
公开(公告)日：2007-09-20
申请号：US11803482
申请日：2007-05-15
申请人： Thomas Wagener
发明人： Thomas Wagener
IPC分类号： H01L21/02
CPC分类号： H01L21/28185 , H01L21/02238 , H01L21/02255 , H01L21/31111 , H01L21/31133 , H01L21/31612 , H01L21/31654 , H01L21/31675 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention relates to methods of making oxide layers, preferably ultrathin oxide layers, with a high level of uniformity. One such method includes the steps of forming a substantially saturated or saturated oxide layer directly or indirectly on a semiconductor surface of a semiconductor substrate, and etchingly reducing the thickness of the substantially saturated or saturated oxide layer by an amount such that the etched oxide layer has a thickness less than the substantially saturated or saturated oxide layer. In certain embodiments, methods of the present invention provide etched oxide layers with a uniformity of less than about +/−10%. The present invention also relates to microelectronic devices including made by methods of the present invention and manufacturing systems for carrying out methods of the present invention.
摘要翻译：本发明涉及制造具有高均匀度的氧化物层，优选是超薄氧化物层的方法。一种这样的方法包括以下步骤：在半导体衬底的半导体表面上直接或间接形成基本上饱和的或饱和的氧化物层，并且蚀刻地将基本上饱和或饱和的氧化物层的厚度减少一定量，使得蚀刻的氧化物层具有厚度小于基本上饱和或饱和的氧化物层。在某些实施方案中，本发明的方法提供均匀度小于约+/- 10％的蚀刻氧化物层。本发明还涉及包括通过本发明的方法制造的微电子器件和用于实施本发明的方法的制造系统。

7. 发明申请

US20060076627A1 ULTRA SHALLOW JUNCTION FORMATION BY EPITAXIAL INTERFACE LIMITED DIFFUSION 有权
标题翻译：通过外延界面有限扩散形成的超声结构
公开(公告)号：US20060076627A1
公开(公告)日：2006-04-13
申请号：US10711899
申请日：2004-10-12
申请人： Huajie Chen , Omer Dokumaci , Oleg Gluschenkov , Werner Rausch
发明人： Huajie Chen , Omer Dokumaci , Oleg Gluschenkov , Werner Rausch
IPC分类号： H01L29/94
CPC分类号： H01L21/26533 , H01L21/02238 , H01L21/26513 , H01L21/31654 , H01L21/31675 , H01L21/324 , H01L29/0847 , H01L29/66636
摘要： A method of forming a field effect transistor creates shallower and sharper junctions, while maximizing dopant activation in processes that are consistent with current manufacturing techniques. More specifically, the invention increases the oxygen content of the top surface of a silicon substrate. The top surface of the silicon substrate is preferably cleaned before increasing the oxygen content of the top surface of the silicon substrate. The oxygen content of the top surface of the silicon substrate is higher than other portions of the silicon substrate, but below an amount that would prevent epitaxial growth. This allows the invention to epitaxially grow a silicon layer on the top surface of the silicon substrate. Further, the increased oxygen content substantially limits dopants within the epitaxial silicon layer from moving into the silicon substrate.
摘要翻译：形成场效应晶体管的方法产生更浅和更尖的结，同时在与当前制造技术一致的工艺中最大化掺杂剂活化。更具体地，本发明增加了硅衬底的顶表面的氧含量。优选在增加硅衬底的顶表面的氧含量之前清洁硅衬底的顶表面。硅衬底的顶表面的氧含量高于硅衬底的其它部分，但低于防止外延生长的量。这允许本发明在硅衬底的顶表面上外延生长硅层。此外，增加的氧含量基本上限制外延硅层内的掺杂剂移动到硅衬底中。

8. 发明申请

US20050142815A1 Fabrication method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US20050142815A1
公开(公告)日：2005-06-30
申请号：US11020049
申请日：2004-12-23
申请人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
发明人： Chuichi Miyazaki , Yoshiyuki Abe , Toshihide Uematsu , Minoru Kimura , Kazunari Suzuki , Masao Odagiri , Hideyuki Suga , Manabu Takata
IPC分类号： H01L21/301 , H01L21/304 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/46 , H01L21/52 , H01L21/60 , H01L21/68 , H01L21/78 , H01L21/82
CPC分类号： H01L21/6835 , H01L21/02238 , H01L21/02255 , H01L21/30625 , H01L21/314 , H01L21/31654 , H01L21/31675 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/6834
摘要： A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
摘要翻译：一种能够从切割带稳定地释放芯片的技术包括：将压敏粘合带粘附到形成有集成电路的半导体晶片的电路形成表面上，研磨半导体晶片的背面，以实现预定厚度，强制氧化半导体晶片的背面。然后，剥离粘附到半导体晶片的电路形成表面的压敏粘合带，并将切割带粘附到半导体晶片的背面。此外，通过将半导体晶片切割成单独的芯片来分割半导体晶片，然后通过切割带对芯片的背面进行压制，从而从切割带释放芯片。

9. 发明申请

US20050130449A1 Method of forming an oxide layer using a mixture of a supercritical state fluid and an oxidizing agent 审中-公开
标题翻译：使用超临界状态流体和氧化剂的混合物形成氧化物层的方法
公开(公告)号：US20050130449A1
公开(公告)日：2005-06-16
申请号：US10797318
申请日：2004-03-10
申请人： Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou
发明人： Ping Chuang , Yu-Liang Lin , Mei-Sheng Zhou
IPC分类号： B01J3/00 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28202 , B01J3/008 , H01L21/02238 , H01L21/02255 , H01L21/3144 , H01L21/31675 , H01L21/31679 , H01L28/40 , H01L29/513 , H01L29/518 , Y02P20/544
摘要： A method of forming an oxide layer. A fluid, such as water, is heated and pressurized to supercritical or near-supercritical conditions and mixed with at least one oxidizing agent. The supercritical state mixture of the fluid and at least one oxidizing agent is then applied on the workpiece, forming an oxide layer on the workpiece. The at least one oxidizing agent may comprise nitrogen, and the oxide layer formed on the workpiece may comprise a nitrogen doped oxide.
摘要翻译：一种形成氧化物层的方法。将诸如水的流体加热并加压至超临界或近临界条件并与至少一种氧化剂混合。然后将流体和至少一种氧化剂的超临界状态混合物施加到工件上，在工件上形成氧化物层。至少一种氧化剂可以包含氮，并且在工件上形成的氧化物层可以包括氮掺杂的氧化物。

10. 发明申请

US20050048800A1 Controlled growth of highly uniform, oxide layers, especially ultrathin layers 失效
标题翻译：高度均匀的氧化物层，特别是超薄层的受控生长
公开(公告)号：US20050048800A1
公开(公告)日：2005-03-03
申请号：US10900912
申请日：2004-07-28
申请人： Thomas Wagener
发明人： Thomas Wagener
IPC分类号： H01L21/28 , H01L21/311 , H01L21/316 , H01L29/51 , H01L21/302
CPC分类号： H01L21/28185 , H01L21/02238 , H01L21/02255 , H01L21/31111 , H01L21/31133 , H01L21/31612 , H01L21/31654 , H01L21/31675 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention relates to methods of making oxide layers, preferably ultrathin oxide layers, with a high level of uniformity. One such method includes the steps of forming a substantially saturated or saturated oxide layer directly or indirectly on a semiconductor surface of a semiconductor substrate, and etchingly reducing the thickness of the substantially saturated or saturated oxide layer by an amount such that the etched oxide layer has a thickness less than the substantially saturated or saturated oxide layer. In certain embodiments, methods of the present invention provide etched oxide layers with a uniformity of less than about +/−10%. The present invention also relates to microelectronic devices including made by methods of the present invention and manufacturing systems for carrying out methods of the present invention.
摘要翻译：本发明涉及制造具有高均匀度的氧化物层，优选是超薄氧化物层的方法。一种这样的方法包括以下步骤：在半导体衬底的半导体表面上直接或间接形成基本上饱和的或饱和的氧化物层，并且蚀刻地将基本上饱和或饱和的氧化物层的厚度减少一定量，使得蚀刻的氧化物层具有厚度小于基本上饱和或饱和的氧化物层。在某些实施方案中，本发明的方法提供均匀度小于约+/- 10％的蚀刻氧化物层。本发明还涉及包括通过本发明的方法制造的微电子器件和用于实施本发明的方法的制造系统。

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