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1. 发明申请

US20180095370A1 AUXILIARY EXPOSURE APPARATUS AND EXPOSURE AMOUNT DISTRIBUTION ACQUISITION METHOD 审中-公开
公开(公告)号：US20180095370A1
公开(公告)日：2018-04-05
申请号：US15720891
申请日：2017-09-29
申请人： Tokyo Electron Limited
发明人： Hideaki KASHIWAGI , Takafumi NIWA , Norihisa KOGA
IPC分类号： G03F7/20 , G03F7/16 , H01L21/67 , G03F7/40 , H01L21/027
CPC分类号： G03F7/70991 , G03F7/168 , G03F7/2022 , G03F7/40 , H01L21/027 , H01L21/0274 , H01L21/67178 , H01L21/67225 , H01L21/67248 , H01L21/67253 , H01L22/20
摘要： An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a first total reflection mirror configured to reflect the light from the laser light source toward the wafer; and an imaging device including a light receiving part configured to receive light after reflected by the wafer.

2. 发明申请

US20170316967A1 APPARATUS AND METHODS FOR A MASK INVERTER 审中-公开
公开(公告)号：US20170316967A1
公开(公告)日：2017-11-02
申请号：US15654547
申请日：2017-07-19
申请人： Applied Materials, Inc.
发明人： Edward Ng , Jeffrey C. Hudgens , Ayan Majumdar , Sushant S. Koshti
IPC分类号： H01L21/687 , B65H15/00 , H01L21/67 , B65H43/04 , H01L21/677
CPC分类号： H01L21/68707 , B08B1/00 , B65H15/00 , B65H43/04 , B65H2301/333 , B65H2404/651 , B65H2405/50 , B65H2515/716 , B65H2553/20 , H01L21/67051 , H01L21/67225 , H01L21/67778
摘要： In some embodiments, apparatus and methods are provided for improved handling of lithography masks including a mask inverter that includes a first contact pad dedicated to inverting masks that have not been cleaned; a second contact pad dedicated to inverting masks that have been cleaned; an actuator coupled to the first and second contact pads and operable to invert the first and second contact pads; and a controller coupled to the actuator and operative to control the actuator. Numerous other aspects are provided.

3. 发明申请

US20170278714A1 CONTROL DEVICE, SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD, AND PROGRAM 审中-公开
公开(公告)号：US20170278714A1
公开(公告)日：2017-09-28
申请号：US15466277
申请日：2017-03-22
申请人： Tokyo Electron Limited
发明人： Yuichi Takenaga , Takahito Kasai
IPC分类号： H01L21/306 , H01L21/67 , H01L21/66 , B32B37/14 , B32B37/02
CPC分类号： H01L21/306 , B32B37/02 , B32B37/14 , B32B2457/14 , H01L21/67225 , H01L21/67253 , H01L22/12
摘要： Disclosed is a control device that controls an operation of a substrate processing apparatus that forms a laminated film by forming a first film on a substrate and then forming a second film. The control device includes a recipe memory unit storing first and second film formation conditions to form the first and second films, a model memory storing first and second process models that represent the effects of the first film formation conditions on the properties of the first and second films, and a controller configured to: adjust the second film formation condition based on a measured value of a property of the laminated film formed by the first and second film formation conditions, and the second process model stored in the model memory unit; and determine whether or not to adjust the first film formation condition based on an expected value of the property of the laminated film.

4. 发明申请

US20170140962A1 SUBSTRATE TREATING APPARATUS 审中-公开
公开(公告)号：US20170140962A1
公开(公告)日：2017-05-18
申请号：US15347316
申请日：2016-11-09
申请人： SCREEN Holdings Co., Ltd.
发明人： Yukihiko INAGAKI
IPC分类号： H01L21/67
CPC分类号： H01L21/67225 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/67276 , H01L21/67745
摘要： A substrate treating apparatus includes a treating section for treating substrates. The treating section has a front face and a rear face both connectable to an indexer section for feeding the substrates to the treating section. Such substrate treating apparatus can improve the degree of freedom for arranging the treating section and the indexer section.

5. 发明授权

US09653293B2 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
公开(公告)号：US09653293B2
公开(公告)日：2017-05-16
申请号：US14619554
申请日：2015-02-11
申请人： TOKYO ELECTRON LIMITED
发明人： Hidetami Yaegashi
IPC分类号： G03F7/20 , H01L21/027 , H01L21/67 , H01L21/311
CPC分类号： H01L21/0274 , G03F7/2024 , H01L21/31144 , H01L21/67178 , H01L21/67225
摘要： A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

6. 发明申请

US20170031245A1 SUBSTRATE TREATMENT SYSTEM 有权
标题翻译：基板处理系统
公开(公告)号：US20170031245A1
公开(公告)日：2017-02-02
申请号：US15106915
申请日：2014-12-15
申请人： Tokyo Electron Limited , Osaka University
发明人： Seiji NAGAHARA , Gousuke SHIRAISHI , Satoru SHIMURA , Kousuke YOSHIHARA , Shinichiro KAWAKAMI , Masaru TOMONO , Seiichi TAGAWA , Akihiro OSHIMA
IPC分类号： G03F7/20 , H01L21/67
CPC分类号： G03F7/2004 , G03F7/20 , H01L21/67098 , H01L21/67115 , H01L21/67196 , H01L21/67225
摘要： A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.
摘要翻译：一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或惰性气体气氛。

7. 发明授权

US09553102B2 Tungsten separation 有权
标题翻译：钨分离
公开(公告)号：US09553102B2
公开(公告)日：2017-01-24
申请号：US14463561
申请日：2014-08-19
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L27/115 , C23F4/00 , H01L21/28 , H01J37/32
CPC分类号： H01L27/11582 , C23F4/00 , H01J37/32357 , H01L21/28 , H01L21/32136 , H01L21/67225 , H01L27/11568
摘要： Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.
摘要翻译：描述了从图案化衬底的表面选择性地蚀刻钨的方法。根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

8. 发明申请

US20160282725A1 EXPOSURE DEVICE, SUBSTRATE PROCESSING APPARATUS, EXPOSURE METHOD FOR SUBSTRATE AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：曝光装置，基板处理装置，基板曝光方法及基板处理方法
公开(公告)号：US20160282725A1
公开(公告)日：2016-09-29
申请号：US15079153
申请日：2016-03-24
申请人： SCREEN HOLDINGS CO., LTD.
发明人： Tadashi MIYAGI , Koji NISHI , Toru MOMMA
IPC分类号： G03F7/20
CPC分类号： H01L21/67225 , G03F7/708 , G03F7/70808 , H01L21/67253 , H01L21/67748 , H01L21/6776
摘要： A local transport hand is configured to be movable in a front-and-rear direction between a rear position rearward of a light emitter and a front position forward of the light emitter. A substrate on which a DSA film is formed is placed on an upper surface of the local transport hand. Vacuum ultraviolet rays having strip-shape cross sections are emitted from the light emitter to cross a moving path of the local transport hand. The local transport hand is moved from the front position to the rear position such that the DSA film on the substrate is irradiated with the vacuum ultraviolet rays emitted by the light emitter. At this time, a moving speed of the substrate is controlled, so that an exposure value for the DSA film formed on the substrate is adjusted.
摘要翻译：局部运送手被构造成可在光发射器后方的后方位置与光发射器前方的前方位置之间沿前后方向移动。其上形成有DSA膜的基板被放置在本地运输手的上表面上。具有带状横截面的真空紫外线从发光体发射到本地运输手的移动路径上。本地运输手从前部位置移动到后部位置，使得基板上的DSA膜被发光体发射的真空紫外线照射。此时，控制基板的移动速度，调整在基板上形成的DSA膜的曝光值。

9. 发明申请

US20160137427A1 LOAD LOCK SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN A LITHOGRAPHY SYSTEM 审中-公开
标题翻译：负载锁定系统和方法，用于在基底系统中传输基板
公开(公告)号：US20160137427A1
公开(公告)日：2016-05-19
申请号：US14939910
申请日：2015-11-12
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Michel Pieter Dansberg , Sjoerd Hesdahl , Jan Pieter Roelof Jongeneel
IPC分类号： B65G47/90
CPC分类号： B65G47/90 , B25J9/0087 , B25J9/043 , G03F7/7075 , H01L21/67201 , H01L21/67225 , H01L21/67742 , H01L21/67766 , H01L21/68707
摘要： The present invention relates to an apparatus and a method for transferring substrates into and from a vacuum chamber in a lithography apparatus. The load lock system comprises: a load lock chamber provided with an opening for allowing passage of a substrate in and out of the load lock chamber, and a transfer apparatus comprising a sub-frame at least partially arranged in the load lock chamber, an arm which is, with a proximal end thereof, connected to the sub-frame, and a substrate receiving unit which is connected to a distal end of the arm. The arm comprises at least three hinging arm parts, wherein a first and a second arm part are hingedly connected to the sub-frame with a proximal end thereof. A third arm part is hingedly connected to the distal ends of the first and second arm parts. The arm parts are arranged to form a four-bar linkage.
摘要翻译：本发明涉及一种用于在光刻设备中将真空室转移到真空室中的装置和方法。所述装载锁定系统包括：装载锁定室，其设置有用于允许衬底进入和离开所述装载锁定室的开口;以及传送装置，包括至少部分地布置在所述装载锁定室中的副框架，臂其基端部连接到子框架，以及基板接收单元，其连接到臂的远端。臂包括至少三个铰接臂部分，其中第一和第二臂部分与其近端铰接地连接到子框架。第三臂部分铰接地连接到第一和第二臂部分的远端。臂部件布置成形成四杆连杆。

10. 发明申请

US20160056167A1 TUNGSTEN SEPARATION 有权
标题翻译： TUNGSTEN分离
公开(公告)号：US20160056167A1
公开(公告)日：2016-02-25
申请号：US14463561
申请日：2014-08-19
申请人： Applied Materials, Inc.
发明人： Xikun Wang , Jie Liu , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L27/115 , C23F4/00
CPC分类号： H01L27/11582 , C23F4/00 , H01J37/32357 , H01L21/28 , H01L21/32136 , H01L21/67225 , H01L27/11568
摘要： Methods of selectively etching tungsten from the surface of a patterned substrate are described. The etch electrically separates vertically arranged tungsten slabs from one another as needed, for example, in the manufacture of vertical flash memory devices. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a capacitively-excited chamber plasma region. The methods then include exposing the tungsten slabs to remotely-excited fluorine formed in an inductively-excited remote plasma system. A low electron temperature is maintained in the substrate processing region during each operation to achieve high etch selectivity.
摘要翻译：描述了从图案化衬底的表面选择性地蚀刻钨的方法。根据需要，蚀刻将垂直布置的钨板彼此电分离，例如在垂直闪存器件的制造中。钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。所述方法包括将电短路钨板暴露于在电容激发室等离子体区域中形成的远激发氟。所述方法包括将钨板暴露于在感应激发的远程等离子体系统中形成的远程激发的氟。在每个操作期间在基板处理区域中维持低电子温度以实现高蚀刻选择性。

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