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1. 发明申请

US20190123002A1 INTEGRALLY FORMED BIAS AND SIGNAL LEAD FOR A PACKAGED TRANSISTOR DEVICE 审中-公开
公开(公告)号：US20190123002A1
公开(公告)日：2019-04-25
申请号：US15787903
申请日：2017-10-19
申请人： NXP USA, Inc.
发明人： Arturo Roiz , Justin Nelson Annes , Terry L. Thomas
IPC分类号： H01L23/66 , H01L23/047 , H01L23/00
CPC分类号： H01L23/66 , H01L23/047 , H01L24/48 , H01L24/49 , H01L2223/665 , H01L2224/48091 , H01L2224/48175 , H01L2224/48195 , H01L2224/49175 , H01L2924/00014 , H01L2224/45099
摘要： A lead, for a packaged transistor device, having a signal portion and a bias line portion, with the signal portion and the bias line portion each having a proximal end and a distal end. The signal portion and the bias line portions of the lead are integrally formed together as a single conductive component, with the proximal end of the bias line portion integrated into the signal portion of the lead and with the distal ends of the signal portion and the bias line portion physically separate from each other.

2. 发明授权

US09887668B2 Power amplifier modules with power amplifier and transmission line and related systems, devices, and methods 有权
公开(公告)号：US09887668B2
公开(公告)日：2018-02-06
申请号：US15259995
申请日：2016-09-08
申请人： Skyworks Solutions, Inc.
发明人： Peter J. Zampardi, Jr. , Hsiang-Chih Sun , Sandra Louise Petty-Weeks , Guohao Zhang , Hardik Bhupendra Modi
IPC分类号： H03F3/14 , H03F1/02 , H03F3/19 , H03F3/21 , H03F3/213 , H03F3/195 , H03F3/24 , H01L23/552 , H01L23/66 , H01L23/00 , H01L29/36 , H01L29/66 , H01L29/737 , H01L29/812 , H01L29/08 , H01L29/205 , H01L21/8252 , H01L27/06 , H01L23/498 , H01L23/50 , H03F3/60 , H01L29/20 , H01L23/48 , H01L21/48 , H01L21/56 , H01L21/78 , H01L21/8249 , H01L21/66 , H01L23/31 , H01L21/768 , H03F3/187 , H03F3/347 , H03F1/56 , H01L29/8605 , H01L27/092 , H03F3/45 , H01L29/06 , H01L29/10
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

3. 发明授权

US09628076B2 Transmission circuit and semiconductor integrated circuit 有权
公开(公告)号：US09628076B2
公开(公告)日：2017-04-18
申请号：US15136374
申请日：2016-04-22
申请人： Socionext Inc.
发明人： Nobumasa Hasegawa
IPC分类号： H03K3/00 , H03K17/687 , H03K19/0175 , H01L23/66 , H03F3/45 , H03M9/00 , H04L25/00 , H03F3/217
CPC分类号： H03K17/687 , H01L23/66 , H01L2223/6638 , H01L2223/665 , H01L2223/6655 , H03F3/2173 , H03F3/45071 , H03F3/45179 , H03F2200/453 , H03F2203/45026 , H03K19/0175 , H03K19/017545 , H03M9/00 , H04L25/00 , H04L25/0272 , H04L25/0278
摘要： A transmission circuit includes a driver circuit that includes: a transistor to regulate output impedance, and a switching circuit that is connected to the transistor to regulate output impedance and switches an output polarity for differential output; and a bias circuit that includes: a first replica circuit including another transistor corresponding to the transistor to regulate output impedance, the bias circuit generating a gate voltage so as to make a current-voltage characteristic of the transistor to regulate output impedance correspond to a first output impedance value, and supply the gate voltage to a gate of the transistor to regulate output impedance.

4. 发明授权

US09520835B2 Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods 有权
标题翻译：功率放大器模块包括具有分级和相关系统的双极晶体管，器件和方法
公开(公告)号：US09520835B2
公开(公告)日：2016-12-13
申请号：US14686585
申请日：2015-04-14
申请人： Skyworks Solutions, Inc.
发明人： Tin Myint Ko , Philip John Lehtola , Matthew Thomas Ozalas , David Steven Ripley , Hongxiao Shao , Peter J. Zampardi, Jr.
IPC分类号： H03F3/195 , H03F1/02 , H03F3/19 , H03F3/21 , H03F3/24 , H01L23/552 , H01L23/66 , H01L23/00 , H01L29/36 , H01L29/66 , H01L29/737 , H01L29/812 , H01L29/08 , H01L29/205 , H01L27/06 , H01L23/498 , H01L23/50 , H03F3/60 , H03F3/213 , H03F3/187 , H03F3/347 , H03F3/45 , H01L29/8605 , H01L21/8252 , H01L27/092
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： One aspect of this disclosure is a power amplifier module that includes a first die including a power amplifier and a passive component, the power amplifier including a bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at an interface with the base, the collector also having a grading in which doping concentration increases away from the base; and a second die including a bias circuit configured to generate a bias signal based at least partly on an indication of an electrical property of the passive component of the first die and to provide the bias signal to the power amplifier. Other embodiments of the module are provided along with related methods and components thereof.
摘要翻译：本公开的一个方面是功率放大器模块，其包括具有功率放大器和无源部件的第一管芯，所述功率放大器包括具有集电极的双极晶体管，邻接所述集电极的基极和发射极，所述集电极具有掺杂在与碱的界面处浓度为至少约3×1016cm-3，集电体也具有掺杂浓度从基底增加的分级; 以及第二管芯，其包括偏置电路，所述偏置电路被配置为至少部分地基于所述第一管芯的无源部件的电特性的指示来产生偏置信号，并将所述偏置信号提供给所述功率放大器。模块的其他实施例与其相关方法和组件一起提供。

5. 发明授权

US09460840B2 Seal ring inductor and method of forming the same 有权
标题翻译：密封环电感及其形成方法
公开(公告)号：US09460840B2
公开(公告)日：2016-10-04
申请号：US13040096
申请日：2011-03-03
申请人： Fikret Altunkilic , Haki Cebi
发明人： Fikret Altunkilic , Haki Cebi
IPC分类号： H01F5/00 , H01F27/28 , H03H7/01 , H01F17/00 , H03H1/00
CPC分类号： H01L23/645 , H01F17/0013 , H01F41/041 , H01F2017/0046 , H01L23/562 , H01L23/564 , H01L23/585 , H01L23/60 , H01L23/66 , H01L28/60 , H01L2223/665 , H01L2223/6677 , H03H1/0007 , H05K1/18 , H05K3/32 , H05K2201/10015 , H05K2201/1053 , Y10T29/4902
摘要： Apparatuses and methods for providing inductance are disclosed. In one embodiment, a method for providing an inductor includes forming an electrical circuit on a substrate, forming a seal ring around the perimeter of the electrical circuit, providing a break in at least one layer of the seal ring, and electrically connecting the seal ring such that the seal ring operates as an inductor.
摘要翻译：公开了用于提供电感的装置和方法。在一个实施例中，一种用于提供电感器的方法包括在基板上形成电路，在电路周围形成密封环，在密封环的至少一层中提供断裂，并将密封环使得密封环作为电感器工作。

6. 发明授权

US09419073B2 Integrated RF front end system 有权
公开(公告)号：US09419073B2
公开(公告)日：2016-08-16
申请号：US14703465
申请日：2015-05-04
申请人： Skyworks Solutions, Inc.
发明人： Michael Joseph McPartlin , Mark M. Doherty
IPC分类号： H01L29/06 , H01Q1/24 , H01L27/06 , H01L29/165 , H01L29/737 , H01L23/66 , H03F3/24 , H01L29/08 , H01L21/76 , H01L27/082 , H03F3/195
CPC分类号： H01L29/0646 , H01L21/76 , H01L21/761 , H01L23/66 , H01L27/067 , H01L27/0823 , H01L29/0603 , H01L29/0821 , H01L29/0826 , H01L29/165 , H01L29/66242 , H01L29/737 , H01L29/7371 , H01L29/7378 , H01L2223/665 , H01L2223/6655 , H01L2223/6677 , H01L2224/0603 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48471 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/1815 , H01Q1/24 , H03F3/195 , H03F3/245 , H03F2200/222 , H03F2200/294 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H01L2924/00012 , H01L2924/00
摘要： Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band front-end modules for use in 802.11ac-compliant devices. In certain embodiments, integration of front-end module components on a single die is achieved by implementing a high-resistivity layer or substrate directly underneath, adjacent to, and/or supporting SiGe BiCMOS technology elements.

7. 发明授权

US09300254B2 Radio frequency devices with surface-mountable capacitors for decoupling and methods thereof 有权
标题翻译：具有用于去耦的表面贴装电容器的射频装置及其方法
公开(公告)号：US09300254B2
公开(公告)日：2016-03-29
申请号：US14316484
申请日：2014-06-26
申请人： Freescale Semiconductor, Inc.
发明人： Mahesh K. Shah , Jerry L. White , Li Li , Hussain H. Ladhani , Audel A. Sanchez , Lakshminarayan Viswanathan , Fernando A. Santos
IPC分类号： H03F3/213 , H03F1/30 , H03H1/00 , H03F3/195
CPC分类号： H03F1/0288 , H01L23/3107 , H01L23/49562 , H01L23/642 , H01L23/66 , H01L2223/665 , H01L2223/6655 , H01L2223/6666 , H01L2224/49175 , H01L2924/0002 , H03F1/0283 , H03F1/30 , H03F1/565 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/213 , H03F2200/267 , H03F2200/451 , H03F2200/555 , H03F2203/21103 , H03F2203/21106 , H03F2203/21139 , H03H1/00 , H03H7/38 , H03H2001/0021 , H05K7/005 , H01L2924/00
摘要： An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply.
摘要翻译：射频（RF）器件的一个实施例包括至少一个晶体管，封装和表面贴装电容器。该封装包含至少一个晶体管，并且包括至少一个端接。表面安装电容器以至少一个晶体管和该器件的电源端之间的分流配置耦合，以将至少一个晶体管与电源分离。

8. 发明申请

US20150326181A1 POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS 审中-公开
公开(公告)号：US20150326181A1
公开(公告)日：2015-11-12
申请号：US14686559
申请日：2015-04-14
申请人： SKYWORKS SOLUTIONS, INC.
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, JR. , Guohao Zhang
IPC分类号： H03F1/02 , H03F3/21 , H03F3/19
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

9. 发明申请

US20150228592A1 MILLIMETER WAVE BANDS SEMICONDUCTOR PACKAGE AND MILLIMETER WAVE BANDS SEMICONDUCTOR DEVICE 审中-公开
标题翻译：微型波导半导体封装和毫米波形半导体器件
公开(公告)号：US20150228592A1
公开(公告)日：2015-08-13
申请号：US14334791
申请日：2014-07-18
申请人： Kabushiki Kaisha Toshiba
发明人： Kazutaka TAKAGI
IPC分类号： H01L23/66 , H01L23/48
CPC分类号： H01L23/66 , H01L23/481 , H01L2223/6627 , H01L2223/665 , H01L2224/48091 , H01P3/121 , H01P5/107 , H01L2924/00014
摘要： Certain embodiments provide a millimeter wave bands semiconductor package including a first metal block, a second metal block, and a circuit board. The first metal block includes a first penetration hole and a second penetration hole, each of which has a flattening film on an inner surface thereof. The second metal block includes a first non-penetration hole and a second non-penetration hole, each of which has a flattening film on an inner surface thereof. The circuit board is disposed between the first metal block and the second metal block and has an input signal line and an output signal line on a front side surface thereof. The first metal block and the second metal block are disposed such that the first non-penetration hole and the first penetration hole constitute a first waveguide and the second non-penetration hole and the second penetration hole constitute a second waveguide.
摘要翻译：某些实施例提供了包括第一金属块，第二金属块和电路板的毫米波段半导体封装。第一金属块包括第一穿透孔和第二穿透孔，每个穿孔在其内表面上具有平坦化膜。第二金属块包括第一非穿透孔和第二非穿透孔，每个孔在其内表面上具有平坦化膜。电路板设置在第一金属块和第二金属块之间，并且在其前侧表面上具有输入信号线和输出信号线。第一金属块和第二金属块被布置成使得第一非穿透孔和第一穿透孔构成第一波导，并且第二非穿透孔和第二穿透孔构成第二波导。

10. 发明申请

US20150200660A1 INTEGRATED CIRCUIT AND TRANSMISSION AND RECEPTION APPARATUS 有权
标题翻译：集成电路和传输和接收设备
公开(公告)号：US20150200660A1
公开(公告)日：2015-07-16
申请号：US14568169
申请日：2014-12-12
申请人： FUJITSU LIMITED
发明人： Satoshi Masuda
IPC分类号： H03K17/16
CPC分类号： H03K17/16 , H01L23/66 , H01L2223/665 , H01L2223/6655 , H01L2223/6683 , H01L2224/06 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a transistor, and an impedance matching circuit coupled with the transistor. The impedance matching circuit includes a signal line to transmit a high-frequency signal and a power supply line that is a short stub branched from the signal line and supplies current to the transistor. The power supply line includes a bent line and a shortcut line to shortcut the bent line.
摘要翻译：集成电路包括晶体管和与晶体管耦合的阻抗匹配电路。阻抗匹配电路包括用于传输高频信号的信号线和作为从信号线分支出来的短短枝的电源线，并将电流提供给晶体管。电源线包括弯曲线和快捷线，以快速弯曲弯曲线。

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