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1. 发明申请

US20030183839A1 Thermoelectric module 有权
标题翻译：热电模块
公开(公告)号：US20030183839A1
公开(公告)日：2003-10-02
申请号：US10393452
申请日：2003-03-21
发明人： Masayoshi Yamashita , Naoki Kamimura , Fumiyasu Tanoue , Katsuhiko Onoue , Toshiharu Hoshi
IPC分类号： H01L029/74
CPC分类号： H01L29/66992 , H01L23/38 , H01L2924/0002 , H01S5/02415 , Y10S257/93 , H01L2924/00
摘要： A thermoelectric module is constituted by a pair of substrates having electrodes, which are arranged opposite to each other with a prescribed space therebetween, in which a prescribed number of thermoelectric elements are arranged in such a way that a p-type and an n-type are alternately arranged, so that the thermoelectric elements are connected in series or in parallel together with the electrodes. Herein, one substrate is a heat absorption side, and other substrate is a heat radiation side. In addition, a current density in a current transmission area of the heat-absorption-side electrode is set to 50 A/mm2 or less, and a height of the thermoelectric element is set to 0.7 mm or less. Furthermore, a temperature-controlled semiconductor module can be realized by combining a thermoelectric module with a semiconductor component such as a semiconductor laser.
摘要翻译：热电模块由具有电极的一对基板构成，所述基板以规定间隔彼此相对配置，其中规定数量的热电元件以这样的方式排列，使得p型和n型交替地布置，使得热电元件与电极串联或并联连接。这里，一个基板是吸热侧，其他基板是散热侧。此外，将吸热侧电极的电流透过区域的电流密度设定为50A / mm 2以下，将热电元件的高度设定为0.7mm以下。此外，可以通过将热电模块与诸如半导体激光器的半导体部件组合来实现温度控制半导体模块。

2. 发明授权

US4949145A Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation 失效
标题翻译：具有高碱浓度并适用于低温操作的同相双极晶体管
公开(公告)号：US4949145A
公开(公告)日：1990-08-14
申请号：US253228
申请日：1988-10-04
申请人： Kazuo Yano , Masaaki Aoki , Toshiaki Masuhara , Katsuhiro Shimohigashi
发明人： Kazuo Yano , Masaaki Aoki , Toshiaki Masuhara , Katsuhiro Shimohigashi
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/36 , H01L29/66 , H01L29/732
CPC分类号： H01L29/66992 , H01L27/0623 , H01L29/36
摘要： In a homo-junction bipolar transistor suitable for a low temperature operation below 200.degree.K. (particularly below 77 K), the maximum value of the impurity concentration of an intrinsic base region is set to be at least 1.times.10.sup.18 /cm.sup.3. The impurity concentration of an emitter region is set to a value lower than this maximum value. Thus, a base resistance can be reduced and high speed operation becomes possible. Furthermore, bandgap narrowing develops in the intrinsic base region and a common-emitter current gain in the low temperature operation can be kept at a sufficient value. When this homo-junction bipolar transistor is formed together with complementary insulated gate field effect transistors on the surface of a semiconductor substrate, there can be obtained a Bi-CMOS device capable of a high speed operation even in the low temperature operation.
摘要翻译：在适用于低于200°K（特别是低于77K）的低温操作的同相双极晶体管中，本征基区的杂质浓度的最大值设定为至少1×1018 / cm3。发射极区域的杂质浓度设定为比该最大值低的值。因此，可以降低基极电阻并且可以进行高速运行。此外，在本征基极区域中产生带隙变窄，并且可以将低温操作中的共发射极电流增益保持在足够的值。当这种同相双极晶体管与半导体衬底表面上的互补绝缘栅场效应晶体管一起形成时，即使在低温操作中也可以获得能够进行高速运行的Bi-CMOS器件。

3. 发明授权

US3176146A Semiconductor switch utilizing low temperature and low impurity content 失效
标题翻译：半导体开关利用低温低杂质含量
公开(公告)号：US3176146A
公开(公告)日：1965-03-30
申请号：US84200959
申请日：1959-09-24
申请人： BENDIX CORP
发明人： DUNLAP JR WILLIAM CRAWFORD
IPC分类号： H01L21/00 , H01L29/66 , H03K17/00 , H04N3/12
CPC分类号： H01L21/00 , H01L29/66992 , H03K17/00 , H04N3/12 , Y10S505/86

4. 发明授权

US3079484A Thermostat 失效
公开(公告)号：US3079484A
公开(公告)日：1963-02-26
申请号：US125760
申请日：1960-01-08
申请人： WILLIAM SHOCKLEY
发明人： WILLIAM SHOCKLEY , ADOLF GOETZBERGER
IPC分类号： G05D23/20 , H01L29/00 , H01L29/66
CPC分类号： H01L29/00 , G05D23/2034 , H01L29/66992 , Y10S257/914

5. 发明申请

US20180218969A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180218969A1
公开(公告)日：2018-08-02
申请号：US15850009
申请日：2017-12-21
申请人： Renesas Electronics Corporation
发明人： Hiroyuki NAKAMURA , Hiroya SHIMOYAMA
IPC分类号： H01L23/495 , H01L25/065 , H01L23/31 , H01L23/00 , H01L27/06 , H01L29/66 , H02P27/06 , H02M7/00 , H02M7/537
CPC分类号： H01L23/49575 , B62D5/0406 , H01L23/3107 , H01L23/3121 , H01L23/3135 , H01L23/49524 , H01L23/49541 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/09 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/85 , H01L24/92 , H01L25/0655 , H01L27/0629 , H01L29/66992 , H01L29/78 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/06181 , H01L2224/09165 , H01L2224/2919 , H01L2224/29294 , H01L2224/293 , H01L2224/29339 , H01L2224/32245 , H01L2224/33181 , H01L2224/37124 , H01L2224/37147 , H01L2224/40247 , H01L2224/40499 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49173 , H01L2224/49175 , H01L2224/49177 , H01L2224/49179 , H01L2224/49505 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/83862 , H01L2224/84801 , H01L2224/84862 , H01L2224/85013 , H01L2224/92246 , H01L2224/92247 , H02M7/003 , H02M7/537 , H02P27/06 , H01L2924/00014 , H01L2924/014 , H01L2924/07802 , H01L2924/0781 , H01L2924/01047
摘要： The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

6. 发明授权

US07081677B2 Thermoelectric module 有权
标题翻译：热电模块
公开(公告)号：US07081677B2
公开(公告)日：2006-07-25
申请号：US10393452
申请日：2003-03-21
申请人： Masayoshi Yamashita , Naoki Kamimura , Fumiyasu Tanoue , Katsuhiko Onoue , Toshiharu Hoshi
发明人： Masayoshi Yamashita , Naoki Kamimura , Fumiyasu Tanoue , Katsuhiko Onoue , Toshiharu Hoshi
IPC分类号： H01L35/28
CPC分类号： H01L29/66992 , H01L23/38 , H01L2924/0002 , H01S5/02415 , Y10S257/93 , H01L2924/00
摘要： A thermoelectric module is constituted by a pair of substrates having electrodes, which are arranged opposite to each other with a prescribed space therebetween, in which a prescribed number of thermoelectric elements are arranged in such a way that a p-type and an n-type are alternately arranged, so that the thermoelectric elements are connected in series or in parallel together with the electrodes. Herein, one substrate is a heat absorption side, and other substrate is a heat radiation side. In addition, a current density in a current transmission area of the heat-absorption-side electrode is set to 50 A/mm2 or less, and a height of the thermoelectric element is set to 0.7 mm or less. Furthermore, a temperature-controlled semiconductor module can be realized by combining a thermoelectric module with a semiconductor component such as a semiconductor laser.
摘要翻译：热电模块由具有电极的一对基板构成，所述基板以规定间隔彼此相对配置，其中规定数量的热电元件以这样的方式排列，使得p型和n型交替地布置，使得热电元件与电极串联或并联连接。这里，一个基板是吸热侧，其他基板是散热侧。此外，将吸热侧电极的电流透过区域的电流密度设定为50A / mm 2以下，将热电元件的高度设定为0.7mm，减。此外，可以通过将热电模块与诸如半导体激光器的半导体部件组合来实现温度控制半导体模块。

7. 发明授权

US4504743A Semiconductor resistor element 失效
标题翻译：半导体电阻元件
公开(公告)号：US4504743A
公开(公告)日：1985-03-12
申请号：US326125
申请日：1981-11-30
申请人： Keizo Aoyama , Takahiko Yamauchi
发明人： Keizo Aoyama , Takahiko Yamauchi
IPC分类号： G11C11/413 , G11C11/412 , H01L21/02 , H01L21/822 , H01L21/8244 , H01L27/04 , H01L27/06 , H01L27/11 , H01L29/66 , H01L29/8605 , H03K3/26 , H03K3/01
CPC分类号： H01L28/20 , G11C11/412 , H01L27/0688 , H01L29/66992 , H01L29/8605 , H01L27/1112
摘要： A semiconductor resistor element comprising a semiconductor film which has a desired shape and electrode wirings at both ends thereof, and a control electrode provided between the two ends of the semiconductor film via an insulating film. The control electrode is served with a control voltage which controls the resistance of the semiconductor film. Namely, the control electrode is served with a control voltage that changes with the change in temperature to offset the change in resistance of the semi-conductor film caused by the change in temperature.
摘要翻译：一种半导体电阻元件，包括在其两端具有所需形状的半导体膜和电极布线，以及通过绝缘膜设置在半导体膜的两端之间的控制电极。控制电极具有控制半导体膜的电阻的控制电压。即，控制电极具有随着温度变化而变化的控制电压，以抵消由温度变化引起的半导体膜的电阻变化。

8. 发明授权

US4426546A Functional electric devices 失效
标题翻译：功能电器
公开(公告)号：US4426546A
公开(公告)日：1984-01-17
申请号：US329879
申请日：1981-12-11
申请人： Shu Hotta , Tomiharu Hosaka , Wataru Shimotsuma , Yoshio Kishimoto
发明人： Shu Hotta , Tomiharu Hosaka , Wataru Shimotsuma , Yoshio Kishimoto
IPC分类号： H01C7/04 , H01G7/04 , H01L29/45 , H01L29/66 , H01L31/0224 , H01L31/04 , H01L31/06 , H01L51/00 , H01L51/30 , H01C7/00
CPC分类号： H01L51/0021 , H01L29/452 , H01L29/66992 , H01L51/005 , H01L51/0064 , H01L51/0067 , H01L51/0069 , H01L51/42 , Y02E10/549
摘要： A functional electric device is described, which device comprises a functional material layer, and a pair of electrodes separated from each other and electrically contacting with the functional material layer. At least one of the pair of electrodes is made of copper or an alloy of copper and a copper inactivating agent is present between the functional material layer and the at least one of the paired electrodes. The functional electric device includes heat-sensitive, fusing and photovoltaic elements.
摘要翻译：描述了一种功能性电气装置，该装置包括功能材料层和彼此分离并与功能材料层电接触的一对电极。一对电极中的至少一个由铜制成，或者在功能材料层和成对电极中的至少一个之间存在铜和铜钝化剂的合金。功能性电气设备包括热敏，熔合和光电元件。

9. 发明授权

US4219829A Field effect transistor having a surface channel and its method of operation 失效
标题翻译：具有表面通道的场效应晶体管及其操作方法
公开(公告)号：US4219829A
公开(公告)日：1980-08-26
申请号：US793714
申请日：1977-05-04
申请人： Gerhard Dorda , Ignaz Eisele
发明人： Gerhard Dorda , Ignaz Eisele
IPC分类号： H01L29/80 , H01L21/338 , H01L29/10 , H01L29/167 , H01L29/207 , H01L29/66 , H01L29/78 , H01L29/812 , H01L29/72
CPC分类号： H01L29/66992 , H01L29/1029 , H01L29/105 , H01L29/167 , H01L29/207 , H01L29/78
摘要： A field effect transistor includes a semiconductor substrate of a first conductivity having a source zone and a drain zone of an opposite, second conductivity spaced apart therein and extending to the surface thereof. A surface channel adjoins the surface, is of the second conductivity, and extends in an area located between the source and drain zones. A gate electrode is carried above the surface channel, either on an insulator, or directly on the surface to form a Schottky junction. A second zone lies beneath the surface below or in overlapping relation to the surface channel and extends between the drain and source zones. The second channel is doped with dopant particles whose energy level in the forbidden band of the semiconductor substrate, at an operating temperature T, lies at a distance of more than 1/2 kT from the conduction band edge and valence band edge of the semiconductor substrate. Application of proper potentials with respect to the start voltage required for ionization of the dopant particles in the second channel causes the field effect transistor to function as a high-speed switch. Connection of the field effect transistor in series with a resistance between the poles of a power supply which has a voltage greater than the start voltage causes the field effect transistor to operate, in combination with the resistor, as an oscillator.
摘要翻译：场效应晶体管包括具有第一导电性的半导体衬底，该半导体衬底具有源极区和漏极区，其间隔开并延伸到其表面。表面通道邻接表面，具有第二导电性，并且在位于源极和漏极区之间的区域中延伸。栅极电极在绝缘体上方或表面上直接承载在表面通道上方，以形成肖特基结。第二区位于表面下方或与表面通道重叠的表面下方，并在漏区和源区之间延伸。第二通道掺杂有掺杂剂颗粒，其在半导体衬底的禁带中的工作温度T处的能级与半导体衬底的导带边缘和价带边缘之间的距离大于1/2 kT 。对于第二通道中的掺杂剂粒子的电离所需的起始电压的适当电位的施加使得场效应晶体管起到高速开关的作用。与具有大于启动电压的电压的电源极之间的电阻与场效应晶体管的串联连接使得场效应晶体管与电阻一起作为振荡器工作。

10. 发明授权

US4210466A Process for preparing heat sensitive semiconductor switch 失效
标题翻译：制备热敏半导体开关的工艺
公开(公告)号：US4210466A
公开(公告)日：1980-07-01
申请号：US966627
申请日：1978-12-05
申请人： Yutaka Mihashi , Josuke Nakata
发明人： Yutaka Mihashi , Josuke Nakata
IPC分类号： H01L35/00 , H01L21/265 , H01L29/66 , H01L29/74 , H01L23/56 , H01L21/263
CPC分类号： H01L29/66992 , H01L21/26513 , Y10S148/093
摘要： A process for preparing heat sensitive semiconductor switch which switches from OFF state to ON state at relatively low temperature.In a heat sensitive thyristor having PNPN four layer structure, an N type base region is exposed at one part of the surface exposed part in the P type base region to form an opening and ions of a P type impurity such as boron, aluminum and gallium are implanted from the opening to form a part having a large leakage current in a collector junction under excellent control, and to provide lower switching temperature for switching from the OFF state to the ON state with high reproducibility.
摘要翻译：一种用于制备在相对较低温度下从OFF状态切换到ON状态的热敏半导体开关的方法。在具有PNPN四层结构的热敏晶闸管中，N型基极区域露出在P型基极区域的表面露出部分的一部分上，以形成P型杂质如硼，铝和镓的离子从开口注入形成在集电极结中具有大泄漏电流的部分，并且提供较低的开关温度，用于以高再现性从OFF状态切换到ON状态。

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