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1. 发明申请

US20180277700A1 SOLAR CELL, METHOD FOR MANUFACTURING SAME, SOLAR CELL MODULE AND WIRING SHEET 审中-公开
公开(公告)号：US20180277700A1
公开(公告)日：2018-09-27
申请号：US15991702
申请日：2018-05-29
申请人： KANEKA CORPORATION
发明人： Gensuke KOIZUMI , Daisuke ADACHI , Kunihiro NAKANO
IPC分类号： H01L31/05 , H01L31/0747 , H01L31/0224 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/0504 , H01L31/02008 , H01L31/02167 , H01L31/0224 , H01L31/022425 , H01L31/022433 , H01L31/022441 , H01L31/02245 , H01L31/022466 , H01L31/022475 , H01L31/04 , H01L31/05 , H01L31/0508 , H01L31/0516 , H01L31/0747 , H01L31/1884 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second conductivity-type silicon-based thin-film different from the first conductivity-type silicon-based thin-film, on a second surface of the substrate that is opposite to the first surface of the substrate; forming a first transparent electrode layer on the first conductivity-type silicon-based thin-film; and forming a second transparent electrode layer on the second conductivity-type silicon-based thin-film; forming a first metal seed layer on a first transparent electrode layer; forming a second metal seed layer on a second transparent electrode layer; forming a third metal seed layer on a peripheral edge and on an end-edge of the second conductivity-type silicon-based thin-film; forming a first plating layer on the first metal seed layer and a third plating layer on the third metal seed layer simultaneously by an electroplating method.

2. 发明授权

US10074766B2 Method for producing semiconductor components and semiconductor component 有权
公开(公告)号：US10074766B2
公开(公告)日：2018-09-11
申请号：US15119376
申请日：2015-02-17
申请人： OSRAM Opto Semiconductors GmbH
发明人： Norwin Von Malm , Alexander F. Pfeuffer , Tansen Varghese , Philipp Kreuter
IPC分类号： H01L31/18 , H01L31/0224 , H01L33/00 , H01L33/38 , H01L31/0352 , H01L31/0693 , H01L31/0735 , H01L31/056 , H01L23/544 , H01L31/0304 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/42
CPC分类号： H01L31/1892 , H01L21/76898 , H01L23/544 , H01L31/02245 , H01L31/022466 , H01L31/03046 , H01L31/03048 , H01L31/035236 , H01L31/035281 , H01L31/056 , H01L31/0693 , H01L31/0735 , H01L31/186 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/382 , H01L33/42 , H01L2223/5446 , H01L2933/0016 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.

3. 发明授权

US10002985B2 Method for manufacturing solar cell module 有权
公开(公告)号：US10002985B2
公开(公告)日：2018-06-19
申请号：US15261365
申请日：2016-09-09
申请人： LG ELECTRONICS INC.
发明人： Joonhan Kwon , Hyeyoung Yang , Bojoong Kim
IPC分类号： B21D53/06 , H01L31/05 , H01L31/0224 , H01L31/048 , H01L31/068 , H01L31/049 , H01L31/0216
CPC分类号： H01L31/0516 , H01L31/0216 , H01L31/02245 , H01L31/022458 , H01L31/0481 , H01L31/049 , H01L31/0512 , H01L31/0682 , Y02E10/547 , Y10T29/49355
摘要： A solar cell module and a method for manufacturing the same are disclosed. The solar cell module includes solar cells each including a semiconductor substrate, and first electrodes and second electrodes extending in a first direction on a surface of the semiconductor substrate, conductive lines extended in a second direction crossing the first direction on the surface of the semiconductor substrate and connected to the first electrodes or the second electrodes through a conductive adhesive, and an insulating adhesive portion extending in the first direction on at least a portion of the surface of the semiconductor substrate, on which the conductive lines are disposed, and fixing the conductive lines to the semiconductor substrate and the first and second electrodes. The insulating adhesive portion is attached up to an upper part and a side of at least a portion of each conductive line.

4. 发明申请

US20170186901A1 Back side contact layer for PV module with by-pass configuration 审中-公开
公开(公告)号：US20170186901A1
公开(公告)日：2017-06-29
申请号：US15300289
申请日：2015-03-31
申请人： Stichting Energieonderzoek Centrum Nederland
发明人： Evert Eugène Bende , Bas Bernardus van Aken , Nicolas Guillevin , Markus Johan Jansen , Ilkay Cesar
IPC分类号： H01L31/05 , H01L31/02 , H01L31/0224 , H01L31/044
CPC分类号： H01L31/0443 , H01L27/1421 , H01L31/02013 , H01L31/022441 , H01L31/02245 , H01L31/022458 , H01L31/044 , H01L31/046 , H01L31/0465 , H01L31/0508 , H01L31/0516 , Y02E10/50
摘要： Back side connection layer for a photo-voltaic module with a plurality of PV-cells (1, 2). The PV-cells (1, 2) are of a type having a plurality of back side contacts (11, 12). A by-pass diode connection path (6) is formed in the back side connection layer (3) along an edge direction of two adjacent cells (1, 2) with a straight or meandering pattern around outer contacts (4, 5) of the plurality of back side contacts (11, 12) of the two adjacent cells (1, 2).

5. 发明申请

US20170110604A1 SOLAR CELL REFLECTOR / BACK ELECTRODE STRUCTURE 审中-公开
公开(公告)号：US20170110604A1
公开(公告)日：2017-04-20
申请号：US15337590
申请日：2016-10-28
申请人： Stephen J. Fonash
发明人： Stephen J. Fonash
IPC分类号： H01L31/0224 , H01L31/056
CPC分类号： H01L31/022441 , H01L31/022433 , H01L31/02245 , H01L31/0236 , H01L31/0392 , H01L31/056 , Y02E10/52
摘要： A photovoltaic or light detecting device is provided that includes a periodic array of dome or dome-like protrusions at the light impingement surface and three forms of reflector/back electrode at the device back. The beneficial interaction between an appropriately designed top protrusion array and these reflector/electrode back contacts (R/EBCs) serve (1) to refract the incoming light thereby providing photons with an advantageous larger momentum component parallel to the plane of the back (R/EBC) contact and (2) to provide optical impedance matching for the short wavelength incoming light. The reflector/back electrode operates as a back light reflector and counter electrode to the periodic array of dome or dome-like structures. A substrate supports the reflector/back electrode.

6. 发明授权

US09627566B2 Foil-based metallization of solar cells 有权
公开(公告)号：US09627566B2
公开(公告)日：2017-04-18
申请号：US14954030
申请日：2015-11-30
申请人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/0236 , H01L31/0745
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

7. 发明申请

US20160118513A1 COMPOSITION FOR FORMING ELECTRODE, PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTATIC CELL 审中-公开
标题翻译：用于形成电极，光电池元件和光伏电池的组合物
公开(公告)号：US20160118513A1
公开(公告)日：2016-04-28
申请号：US14890397
申请日：2013-05-13
申请人： HITACHI CHEMICAL COMPANY, LTD.
发明人： Shuichiro ADACHI , Masato YOSHIDA , Takeshi NOJIRI , Yasushi KURATA , Yoshiaki KURIHARA , Takahiko KATO
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , C03C3/0745 , C03C3/21 , H01B1/22 , H01L31/022441 , H01L31/02245 , H01L31/022458 , Y02E10/50
摘要： A composition for forming an electrode includes a phosphorus-containing copper alloy particle, a tin-containing particle, a specific metal element M-containing particle, a glass particle, a solvent and a resin, in which M is at least one selected from the group consisting of Li, Be, Na, Mg, K, Ca, Rb, Sr, Cs, Ba, Fr, Ra, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Pd, Ag, Cd, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Al, Ga, Ge, In, Sb, Tl, Pb, Bi and Po.
摘要翻译：用于形成电极的组合物包括含磷铜合金颗粒，含锡颗粒，特定金属元素M的颗粒，玻璃颗粒，溶剂和树脂，其中M是选自由Li，Be，Na，Mg，K，Ca，Rb，Sr，Cs，Ba，Fr，Ra，Sc，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Y，Zr组成的组，Nb，Mo，Tc，Ru，Pd，Ag，Cd，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Hf，Ta，，Re，Os，Ir，Pt，Au，Hg，Al，Ga，Ge，In，Sb，Tl，Pb，Bi和Po。

8. 发明申请

US20160079450A1 FOIL-BASED METALLIZATION OF SOLAR CELLS 有权
公开(公告)号：US20160079450A1
公开(公告)日：2016-03-17
申请号：US14954030
申请日：2015-11-30
申请人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人： Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号： H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号： H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

9. 发明授权

US09281435B2 Light to current converter devices and methods of manufacturing the same 有权
标题翻译：光电转换器及其制造方法
公开(公告)号：US09281435B2
公开(公告)日：2016-03-08
申请号：US13193433
申请日：2011-07-28
申请人： Lingjun Zhang , Jian Wu , Feng Zhang , Xusheng Wang
发明人： Lingjun Zhang , Jian Wu , Feng Zhang , Xusheng Wang
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/18 , H01L31/022441 , H01L31/02245 , H01L31/1804 , Y02E10/542 , Y02E10/547 , Y02P70/521
摘要： Light to current converter devices, such as solar cells, are disclosed. The devices may include via holes extending through the cell substrate and may include through-hole electrodes within the via holes. The through-hole electrodes may be made from one or more materials and may be hollow, partially hollow, or fully filled. Front and rear electrodes may also be formed on the device and can be made of the same or different materials as the through-hole electrode. The devices may include emitters located only on the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, or located on the top surface and full inner surface of the via holes. Processes for making light to current converter devices are also disclosed.
摘要翻译：公开了诸如太阳能电池的光电转换器装置。器件可以包括延伸穿过电池基板的通孔，并且可以在通孔内包括通孔电极。通孔电极可以由一种或多种材料制成，并且可以是中空的，部分中空的或完全填充的。前电极和后电极也可以形成在器件上，并且可以由与通孔电极相同或不同的材料制成。这些装置可以包括仅位于电池顶表面上的发射器，位于顶表面上，沿着通孔的内表面的一部分对称地或不对称地位于通孔的顶表面和整个内表面上。还公开了用于制造光到电流转换器装置的过程。

10. 发明授权

US09246044B2 Photovoltaic cells having metal wrap through and improved passivation 有权
标题翻译：具有金属包裹和改善钝化的光伏电池
公开(公告)号：US09246044B2
公开(公告)日：2016-01-26
申请号：US12792624
申请日：2010-06-02
申请人： Jozef Szlufcik , Christophe Allebe , Frederic Dross , Guy Beaucarne
发明人： Jozef Szlufcik , Christophe Allebe , Frederic Dross , Guy Beaucarne
IPC分类号： H01L31/04 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/1804 , H01L31/0224 , H01L31/022425 , H01L31/022441 , H01L31/02245 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic device is disclosed. In one aspect, the device is formed in a semiconductor substrate. It has a radiation receiving front surface and a rear surface. The device may have a first region of one conductivity type, a second region with the opposite conductivity type adjacent to the front surface, and an antireflection layer. The rear surface is covered by a dielectric layer covering also an inside surface of the via. The front surface has current collecting conductive contacts. The rear surface has conductive contacts extending through the dielectric. A conductive path is in the via for photogenerated current from the front surface. By having the dielectric all over, no aligning and masking is needed. The same dielectric serves to insulate, provide thermal protection, and helps in surface and bulk passivation. It also avoids the need for a junction region near the via, hence reducing unwanted recombination currents.
摘要翻译：公开了一种光电器件。在一个方面中，器件形成在半导体衬底中。它具有辐射接收前表面和后表面。该器件可以具有一种导电类型的第一区域，具有与前表面相邻的相反导电类型的第二区域和抗反射层。后表面被也覆盖通孔内表面的电介质层覆盖。前表面具有集流导电触点。后表面具有延伸穿过电介质的导电触点。导电路径在通孔中，用于来自前表面的光生电流。通过使电介质全部结束，不需要对准和掩蔽。相同的电介质用于绝缘，提供热保护，并有助于表面和体积钝化。它也避免了需要靠近通孔的结区域，从而减少不必要的复合电流。

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